CN205335297U - Integrate LED light source heat conduction structure - Google Patents
Integrate LED light source heat conduction structure Download PDFInfo
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- CN205335297U CN205335297U CN201521072334.6U CN201521072334U CN205335297U CN 205335297 U CN205335297 U CN 205335297U CN 201521072334 U CN201521072334 U CN 201521072334U CN 205335297 U CN205335297 U CN 205335297U
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- light source
- insulating substrate
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Abstract
The utility model provides an integrate LED light source heat conduction structure includes insulating substrate, circuit layer and face of weld, the last through -hole that runs through whole block base material of offering of insulating substrate, and landfill heat conductor in the through -hole, the LED chip welds on the circuit layer through solid crystalline substance, and the heat that the LED chip produced passes through the heat conductor arrival face of weld of circuit layer, through -hole landfill, and the face of weld passes through the mode of reflow soldering and can be in the same place the welding that base plate and radiator are firm. Because more than the abouts 60Wm. K of heat conductivity of brazing metal, far above common bonding agent 1.0Wm. K's heat conductivity, the chip reduces to the reduction of the hot interface between the radiator, thermal resistance by a wide margin moreover, is favorable to prolonging the long -term life -span of LED chip.
Description
Technical field
This utility model relates to a kind of integrated LED light source, particularly to a kind of integrated LED light source conductive structure。
Background technology
LED light source is used widely in every field owing to having the advantage such as energy-saving and environmental protection, life-span length。
Existing LED light source is usually and chip utilizes bonding agent stick on substrate or support, and this bonding agent is mostly the mixture of epoxy resin and pottery or metal dust, fixes chip by the adhesion properties of resin, carries out heat conduction by packing material。And such bonding agent to be generally physical mixed, stability and concordance all poor。Along with the increase of power, heat conductivility and long-time stability are affected by bigger challenge。
Therefore, high-power LED encapsulation needs prior art is improved。
Summary of the invention
The technical problems to be solved in the utility model, is in that to provide a kind of integrated LED light source conductive structure, and integrated LED light source can be made to have, and heat conduction is good and the feature of stable performance。
Integrated LED light source conductive structure of the present utility model this can be implemented so that a kind of integrated LED light source conductive structure, including insulating substrate, circuit layer and solder side, described circuit layer is located at the front of insulating substrate, and described solder side is located at insulating substrate reverse side and welds radiator by thermal conductivity at the brazing metal of more than 60W/m.k。
Described circuit layer is divided into a plurality of crystal bonding area and a plurality of wire welding area, and without electrical connection between crystal bonding area and wire welding area, LED chip is welded on the crystal bonding area of correspondence one by one and forms electrical connection with corresponding wire welding area。
The corresponding each crystal bonding area of described insulating substrate is provided with through the through hole of insulating substrate, landfill heat carrier in through hole, and described heat carrier and forms electrical connection with described crystal bonding area and solder side respectively。
Wherein, integrated LED light source conductive structure of the present utility model may further be:
Offering plurality of through holes on described insulating substrate, the peripheral minimum range of any two adjacent through holes is more than the thickness of described insulating substrate。
Described solder side is metallic silver layer, and solder side area account for place insulating substrate area more than 90%。
The back side of described LED chip is coated with metal material。
Described heat carrier is argent slurry。
Described LED chip is positive cartridge chip or flip-chip；When for positive cartridge chip, each LED chip is integrally placed at the crystal bonding area of correspondence and welds, and forms electrical connection again through reverse looping with wire welding area；When for flip-chip, first the back of each LED chip being carried out thermoelectricity separate design, electrode divides row both sides, and centre is that passage of heat welds with crystal bonding area eutectic, and electrode welds with wire welding area eutectic and forms electrical connection。
This utility model has the advantage that the heat that this utility model LED chip produces arrives solder side by the heat carrier of circuit layer, through hole landfill, and firm to substrate and radiator can be welded together by solder side by the mode of Reflow Soldering。The thermal conductivity of brazing metal is about more than 60W/m.k, and far above the thermal conductivity of common bonding agent 1.0W/m.K, and chip reduces to the hot interface between radiator, thermal resistance is greatly reduced, and is conducive to extending the long term life of LED chip。
Accompanying drawing explanation
This utility model is further described with reference to the accompanying drawings in conjunction with the embodiments。
Fig. 1 is the vertical view view of integrated LED light source conductive structure of the present utility model。
Fig. 2 is the local longitudinal profile schematic diagram of integrated LED light source conductive structure one embodiment of the present utility model。
Fig. 3 is the local longitudinal profile schematic diagram of integrated LED light source another embodiment of conductive structure of the present utility model。
Detailed description of the invention
As shown in Figure 1 to Figure 3, integrated LED light source conductive structure of the present utility model includes insulating substrate 1, circuit layer 2 and solder side 3, described circuit layer 2 is located at the front of insulating substrate 1, and described solder side 3 is located at insulating substrate 1 reverse side and welds radiator 4 by thermal conductivity at the brazing metal of more than 60W/m.k。
Described circuit layer 2 is divided into a plurality of crystal bonding area 21 and a plurality of wire welding area 22, and without electrical connection between crystal bonding area 21 and wire welding area 22, LED chip 5 one_to_one corresponding is welded on crystal bonding area 21 in described through hole 12 and forms electrical connection with corresponding wire welding area 22。
The corresponding each crystal bonding area 21 of described insulating substrate 1 is provided with through the through hole 12 of insulating substrate 1, landfill heat carrier 6 in through hole 12, and described heat carrier 6 forms electrical connection with described crystal bonding area 21 and solder side 22 respectively。
Offering plurality of through holes 12 on described insulating substrate 1, the peripheral minimum range A of any two adjacent through holes 12 is more than the thickness H of described insulating substrate 1。
Described solder side 3 is metallic silver layer, and solder side 3 area account for place insulating substrate area more than 90%。
The back side of described LED chip 5 is coated with metal material, it is preferred to silver ashbury metal or gold-tin alloy。
Described heat carrier 6 is argent slurry。
Described LED chip 5 is positive cartridge chip or flip-chip。As in figure 2 it is shown, when for positive cartridge chip, each LED chip 5 is integrally placed at the crystal bonding area 21 of correspondence and welds, form electrical connection again through reverse looping 52 with wire welding area 22；As it is shown on figure 3, when for flip-chip, the back of each LED chip 5 first carries out thermoelectricity separate design, 54 points of electrode row both sides, centre is that passage of heat 56 welds with crystal bonding area 21 eutectic, and electrode 54 welds with wire welding area 22 eutectic and forms electrical connection。
Although the foregoing describing detailed description of the invention of the present utility model; but those familiar with the art is to be understood that; we are merely exemplary described specific embodiment; rather than for the restriction to scope of the present utility model; those of ordinary skill in the art, in the equivalent modification made according to spirit of the present utility model and change, should be encompassed in scope of the claimed protection of the present utility model。
Claims (8)
1. an integrated LED light source conductive structure, it is characterized in that: include insulating substrate, circuit layer and solder side, described circuit layer is located at the front of insulating substrate, and described solder side is located at insulating substrate reverse side and welds radiator by thermal conductivity at the brazing metal of more than 60W/m.k；
Described circuit layer is divided into a plurality of crystal bonding area and a plurality of wire welding area, and without electrical connection between crystal bonding area and wire welding area, LED chip is welded on the crystal bonding area of correspondence one by one and forms electrical connection with corresponding wire welding area；
The corresponding each LED chip of described insulating substrate is provided with through the through hole of insulating substrate, landfill heat carrier in through hole, and described heat carrier and forms electrical connection with described crystal bonding area and solder side respectively。
2. a kind of integrated LED light source conductive structure according to claim 1, it is characterised in that: offering plurality of through holes on described insulating substrate, the peripheral minimum range of any two adjacent through holes is more than the thickness of described insulating substrate。
3. a kind of integrated LED light source conductive structure according to claim 1, it is characterised in that: described solder side is metallic silver layer, and solder side area account for place insulating substrate area more than 90%。
4. a kind of integrated LED light source conductive structure according to claim 1, it is characterised in that: the back side of described LED chip is coated with metal material。
5. a kind of integrated LED light source conductive structure according to claim 1, it is characterised in that: described heat carrier is argent slurry。
6. a kind of integrated LED light source conductive structure according to claim 1, it is characterised in that: described LED chip is positive cartridge chip or flip-chip。
7. a kind of integrated LED light source conductive structure according to claim 6, it is characterised in that: when described LED chip is positive cartridge chip, each LED chip is integrally placed at the crystal bonding area of correspondence and welds, and forms electrical connection again through reverse looping with wire welding area。
8. a kind of integrated LED light source conductive structure according to claim 6, it is characterized in that: when described LED chip is flip-chip, first the back of each LED chip is carried out thermoelectricity separate design, electrode divides row both sides, centre is that passage of heat welds with crystal bonding area eutectic, and electrode welds with wire welding area eutectic and forms electrical connection。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521072334.6U CN205335297U (en) | 2015-12-21 | 2015-12-21 | Integrate LED light source heat conduction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521072334.6U CN205335297U (en) | 2015-12-21 | 2015-12-21 | Integrate LED light source heat conduction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205335297U true CN205335297U (en) | 2016-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201521072334.6U Active CN205335297U (en) | 2015-12-21 | 2015-12-21 | Integrate LED light source heat conduction structure |
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| CN (1) | CN205335297U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112863372A (en) * | 2019-11-27 | 2021-05-28 | 成都辰显光电有限公司 | Display panel, display device and preparation method of display panel |
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2015
- 2015-12-21 CN CN201521072334.6U patent/CN205335297U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112863372A (en) * | 2019-11-27 | 2021-05-28 | 成都辰显光电有限公司 | Display panel, display device and preparation method of display panel |
| CN112863372B (en) * | 2019-11-27 | 2022-10-04 | 成都辰显光电有限公司 | Display panel, display device and preparation method of display panel |
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| GR01 | Patent grant |