CN201038190Y - LED package structure - Google Patents

LED package structure Download PDF

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Publication number
CN201038190Y
CN201038190Y CNU2007201194175U CN200720119417U CN201038190Y CN 201038190 Y CN201038190 Y CN 201038190Y CN U2007201194175 U CNU2007201194175 U CN U2007201194175U CN 200720119417 U CN200720119417 U CN 200720119417U CN 201038190 Y CN201038190 Y CN 201038190Y
Authority
CN
China
Prior art keywords
heat dissipation
led
dissipation metal
metal structure
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2007201194175U
Other languages
Chinese (zh)
Inventor
胡建华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Refond Optoelectronics Co Ltd
Original Assignee
RUIFENG PHOTOELECTRONIC CO Ltd SHENZHEN CITY
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RUIFENG PHOTOELECTRONIC CO Ltd SHENZHEN CITY filed Critical RUIFENG PHOTOELECTRONIC CO Ltd SHENZHEN CITY
Priority to CNU2007201194175U priority Critical patent/CN201038190Y/en
Application granted granted Critical
Publication of CN201038190Y publication Critical patent/CN201038190Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The utility model relates to an LED encapsulation structure, which comprises a LED chip, a metal cooling structure, a plastic rubber shell for supporting and fixing functions, a pin for electricity guiding, chip adherence or jointing glue, metal connecting wires to connect the chip electrodes with the pin and filling of shaping silica gel for protection purpose. The metal cooling structure and the electrode pin are fixed through the plastic rubber shell. Pits or tubers can be added to the metal cooling structure to achieve different optical effects. At the same time, the combining surface between the metal cooling structure and the plastic rubber shell is irregular so combination is better. Tiny irregular geometry structures are added to the back surface of the metal cooling structure. When in use, the utility model meets the bottom by welding or through heat transmitting rubber so that cooling effects of the whole product is improved.

Description

The LED encapsulating structure
[technical field]
The utility model relates to a kind of LED encapsulating structure, particularly a kind of high-power LED encapsulation construction.
[background technology]
LED (light-emitting diode) is as a kind of luminescent device that directly electric energy is converted into visible light and radiant energy, and it is low to have operating voltage, and power consumption is little, luminous efficiency height, emission response time are extremely short, and be photochromic pure, product itself with and manufacturing process all pollution-free, shock resistance, vibration resistance, stable and reliable for performance, in light weight, series of advantages such as volume is little, and cost is low are extensively thought to be top quality light source of 21 century.
But have influence on the heat dissipation design that main cause that LED is applied to lighting field is the LED encapsulating structure at present, this point obtains embodying on present paster, straight cutting LED, the encapsulating structure of existing paster LED uses epoxy resin as carrier, and the heat resistance of epoxy resin itself and very poor heat conductivity are doomed and the LED of the type can only be applied on the little electric current.Though straight cutting LED uses metallic support, seal but equally also use epoxy resin to do, except heat dispersion is poor, also exist metallic support and the bad problem of epoxy resin adhesion simultaneously, special under the situation of high humiture, this situation is more obvious.And near LED operate as normal room temperature the time, along with the rising of led chip temperature, the luminous intensity of LED can correspondingly reduce.When temperature surpasses a higher limit, the nonvolatil damage of LED meeting, therefore: the heat-sinking capability of existing product structure is seriously restricting reliability and the luminous efficiency of LED, and when LED was applied in the lighting process, too big radiator structure also can affect the actual use of LED.
The situation that runs into that this structure is based at present existing LED encapsulation procedure and the actual use produces, the overall package processing procedure there is no too big adjustment, but improvement by structure, can obviously promote the light output of product, reduce the thermal resistance of LED overall package, promote reliability of products and stability simultaneously.
[utility model content]
The purpose of this utility model is to provide a kind of can promote heat conductivility, reduces overall thermal resistance, promotes the LED encapsulating structure of product global reliability simultaneously.
In order to reach aforementioned purpose, the designed LED encapsulating structure of the utility model comprises led chip, the heat dissipation metal structure, play the plastic shell of support and fixation, play the pin of electric action, the metal connecting line of connection-core plate electrode and pin, wherein heat dissipation metal structure and electrode pin are fixed by plastic shell, led chip is bonded on the front of heat dissipation metal structure, it is characterized in that: but the ad hoc structure of difference is set so that obtain different optical effects on the front of heat dissipation metal structure joint chip, the faying face of heat dissipation metal structure and plastic shell uses irregularly shaped better to combine with plastic shell simultaneously, heat dissipation metal structure backside surface adds tiny irregular geometry with the increase area of dissipation, and then increases the radiating effect of integral product.
Ad hoc structure on the heat dissipation metal structure front is pit or projection, chip be arranged in this pit or projection on.
The irregularly shaped of the faying face of above-mentioned heat dissipation metal structure and plastic shell is zigzag, and the irregular geometry at the heat dissipation metal structure back side also is a zigzag.
Juncture between described led chip and the heat dissipation metal structure welds for adding brazing metal by use.
Above-mentioned electrode pin one end is connected with the heat dissipation metal structure, and makes the heat dissipation metal structure become the electrode of LED.
On the different directions of plastic shell, be provided with pin, so that more chip circuit design and more heat dissipation channel are provided.
On metal shell by mold pressing or reperfusion mode be provided with the Global Macros effect through filling or moulding silica gel, this silica gel is the silica gel of high index of refraction.
Plastic shell adds the reflector or adds other geometries so that obtain needed optical effect at the part of the light-emitting area of LED.
Compared with prior art, advantage of the present utility model is: owing to use the heat dissipation metal structure, and add tiny irregular geometry at the backside surface of heat dissipation metal structure, thus can increase area of dissipation, and then increase the radiating effect of integral product; Simultaneously the faying face of heat dissipation metal structure and plastic shell is provided with irregular burr, can guarantee can better combine between metal radiator structure and the plastic shell.
[description of drawings]
Fig. 1 is the structural representation of the utility model LED encapsulating structure.
Fig. 2 is the vertical view of the utility model LED encapsulating structure.
Fig. 3 is the upward view of the utility model LED encapsulating structure.
Fig. 4 is the cutaway view of the utility model LED encapsulating structure.
Fig. 5 is that the back side of heat dissipation metal structure among Fig. 4 is denoted as the partial enlarged drawing in the circle I.
Fig. 6 is that heat dissipation metal structure and plastic shell faying face are denoted as partial enlarged drawing in the circle II among Fig. 4.
Fig. 7 is the utility model LED encapsulation structural representation when another kind of pin is set.
[embodiment]
See also Fig. 1 to Fig. 7, the designed LED encapsulating structure of the utility model comprises led chip 10, heat dissipation metal structure 12, play support and the metal connecting line 18 of the plastic shell 14 of fixation, the pin 16 that plays electric action, die bonding/solder paste (not shown), connection-core plate electrode and pin, play the Global Macros effect through filling or moulding silica gel 19.
Heat dissipation metal structure 12 and electrode pin 16 are fixing by plastic shell 14, and led chip 10 is bonded on the front of heat dissipation metal structure 12.This juncture can use brazing metal to weld by adding, thereby promotes the capacity of heat transmission of the heat importing heat dissipation metal structure 12 of chip 10 generations, reduces the integral product thermal resistance.On the front of heat dissipation metal structure 12, be provided with pit 13 or projection different structures such as (not shown), so that obtain different optical effects.Because chip is whenever by refraction or reflection, some is depleted the capital, and the raising simultaneously of chip part will be reduced this loss, therefore when using projection, can obtain the higher light output of chip, and when using pit that chip is fixed on the inside, can regulate the lighting angle of chip according to actual needs.
The bottom surface 15 of heat dissipation metal structure is the structure that protrudes in integral LED, and area of dissipation that some grooves or other geometry increase integral LED is set in this bottom surface simultaneously, thereby increases the radiating effect of integral product.In actual application, this underrun heat-conducting glue or soldering paste are connected with bottom wiring board (not shown), and above-mentioned geometry also can make the heat dissipation metal structure more firm with being connected of bottom wiring board simultaneously.In actual applications, the size of this groove or other geometries arrives a millimeter rank at micron.
In addition, in order to guarantee the good heat transfer performance, heat dissipation metal structure 12 is generally made by the good copper of heat conduction, aluminium and alloy thereof.
Faying face at heat dissipation metal structure 12 and plastic shell 14 is provided with irregular burr, can embed mutually when combining with plastic shell, to guarantee the good combination of metal radiator structure 12 and plastic shell 14.With in the present embodiment, these irregular burr are zigzag (referring to Fig. 6).
Plastic shell 14 can play the effect of support and fixing metal radiator structure 12 and electrode pin 16.This shell 14 need be reserved the light-emitting area of positive LED and the radiating surface of bottom surface, can make different structures according to the actual needs in addition, for example square, circular, quadrangle, polygon etc.Surgeon's needle to the part of the light-emitting area of LED can be by adding the reflector mode or add other geometries so that obtain needed optical effect.In order to guarantee the integral inverted light effect of LED, plastic shell can adopt white, if need to keep in application process and also can add other colors when background color is consistent.The material of shell can be PPA, PA6T, PA9T, LCP etc., certainly, in order to guarantee good heat radiation, also can promote whole heat conduction/heat dispersion by the mode of adding other materials.
In addition, on the appropriate location of plastic shell 14, can add location hole 141, be used as screw fixed hole.Also can indicate the polarity of product on the plastic shell by the form of mark in chamfering 142, the printing.
Electrode pin 16 1 ends can be connected with heat dissipation metal structure 12, at this moment, the heat dissipation metal structure becomes the electrode of LED simultaneously, can be connected with the bottom wiring board by add the insulating heat-conductive layer in heat dissipation metal structure bottom surface in actual application, and the support of more circuit design is provided.Certainly, also can be as shown in Figure 7, increase several pins or different directions increases pin so that more chip circuit design and more heat dissipation channel are provided in same direction.
Above-mentioned electrode pin 16 can adopt the method for bending to provide and the multiple occupation mode that is connected of outer member, can do plug connector downwards and uses such as bending, and interior curved and excurvation is used as sticking-element and uses.
In encapsulation process; in the appropriate location of metal shell by mold pressing or the effect of reperfusion mode setting Global Macros through filling or moulding silica gel 19; above-mentioned silica gel is filled or moulding can be selected different external forms according to different optical effect needs, and the silica gel of selecting high index of refraction simultaneously is so that the better bright dipping of led chip.
LED with said structure encapsulates, and can obviously reduce the thermal resistance of LED overall package, promotes the light output of product, promotes the global reliability and the stability of product simultaneously.

Claims (11)

1. LED encapsulating structure, it comprises led chip, heat dissipation metal structure, plays the metal connecting line of pin, connection-core plate electrode and the pin of the plastic shell of support and fixation, an electric action, wherein heat dissipation metal structure and electrode pin are fixed by plastic shell, led chip is bonded on the front of heat dissipation metal structure, it is characterized in that: the faying face of heat dissipation metal structure and plastic shell is irregularly shaped, and heat dissipation metal structure backside surface is provided with irregular geometry.
2. LED encapsulating structure as claimed in claim 1 is characterized in that: heat dissipation metal structure front is provided with pit, and chip is arranged in this pit.
3. LED encapsulating structure as claimed in claim 1 is characterized in that: heat dissipation metal structure front is provided with projection, and chip is arranged on this projection.
4. as claim 2 or 3 described LED encapsulating structures, it is characterized in that: the irregularly shaped of the faying face of heat dissipation metal structure and plastic shell is zigzag.
5. as claim 2 or 3 described LED encapsulating structures, it is characterized in that: the irregular geometry at the heat dissipation metal structure back side is a zigzag.
6. LED encapsulating structure as claimed in claim 1 is characterized in that: the juncture between described led chip and the heat dissipation metal structure welds for adding brazing metal by use.
7. LED encapsulating structure as claimed in claim 5 is characterized in that: electrode pin one end is connected with the heat dissipation metal structure, and makes the heat dissipation metal structure become the electrode of LED.
8. LED encapsulating structure as claimed in claim 6 is characterized in that: be provided with pin on the different directions of plastic shell.
9. LED encapsulating structure as claimed in claim 7 is characterized in that: on metal shell by mold pressing or reperfusion mode be provided with the Global Macros effect through filling or moulding silica gel.
10. LED encapsulating structure as claimed in claim 8 is characterized in that: above-mentioned silica gel is the silica gel of high index of refraction.
11. LED encapsulating structure as claimed in claim 9 is characterized in that: plastic shell adds the reflector or adds other geometries so that obtain needed optical effect at the part of the light-emitting area of LED.
CNU2007201194175U 2007-04-13 2007-04-13 LED package structure Expired - Fee Related CN201038190Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2007201194175U CN201038190Y (en) 2007-04-13 2007-04-13 LED package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2007201194175U CN201038190Y (en) 2007-04-13 2007-04-13 LED package structure

Publications (1)

Publication Number Publication Date
CN201038190Y true CN201038190Y (en) 2008-03-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2007201194175U Expired - Fee Related CN201038190Y (en) 2007-04-13 2007-04-13 LED package structure

Country Status (1)

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CN (1) CN201038190Y (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013010359A1 (en) * 2011-07-15 2013-01-24 上海嘉塘电子有限公司 Self-heat-dissipating led modular structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013010359A1 (en) * 2011-07-15 2013-01-24 上海嘉塘电子有限公司 Self-heat-dissipating led modular structure and manufacturing method thereof

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: SHENZHEN RUIFENG ELECTRONICS CO., LTD.

Free format text: FORMER NAME: RUIFENG PHOTOELECTRONIC CO., LTD., SHENZHEN CITY

CP03 Change of name, title or address

Address after: Shenzhen Nanshan District City, Guangdong province 518000 White Pine Road Baiwang letter Industrial Park two district six.

Patentee after: Shenzhen Refond Optoelectronics Co., Ltd.

Address before: 518000, B2, hi tech park, Heping West Road, Shenzhen, Guangdong, Longhua

Patentee before: Ruifeng Photoelectronic Co., Ltd., Shenzhen City

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080319

Termination date: 20150413

EXPY Termination of patent right or utility model