CN102522300B - 带电粒子束光刻系统以及目标定位装置 - Google Patents

带电粒子束光刻系统以及目标定位装置 Download PDF

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Publication number
CN102522300B
CN102522300B CN201110460373.3A CN201110460373A CN102522300B CN 102522300 B CN102522300 B CN 102522300B CN 201110460373 A CN201110460373 A CN 201110460373A CN 102522300 B CN102522300 B CN 102522300B
Authority
CN
China
Prior art keywords
charged particle
particle beam
actuator
beam lithography
bearing part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110460373.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN102522300A (zh
Inventor
杰里·佩斯特尔
吉多·德布尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2001896A external-priority patent/NL2001896C/en
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN102522300A publication Critical patent/CN102522300A/zh
Application granted granted Critical
Publication of CN102522300B publication Critical patent/CN102522300B/zh
Active legal-status Critical Current
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Details Of Measuring And Other Instruments (AREA)
CN201110460373.3A 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置 Active CN102522300B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8974408P 2008-08-18 2008-08-18
NL2001896A NL2001896C (en) 2008-08-18 2008-08-18 Charged particle beam lithography system and target positioning device.
NL2001896 2008-08-18
US61/089,744 2008-08-18

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009801412805A Division CN102187424B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置

Publications (2)

Publication Number Publication Date
CN102522300A CN102522300A (zh) 2012-06-27
CN102522300B true CN102522300B (zh) 2014-10-15

Family

ID=41054033

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110460373.3A Active CN102522300B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置
CN2009801412805A Active CN102187424B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2009801412805A Active CN102187424B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置

Country Status (6)

Country Link
EP (2) EP2313908B1 (cg-RX-API-DMAC7.html)
JP (3) JP5628808B2 (cg-RX-API-DMAC7.html)
KR (2) KR101785238B1 (cg-RX-API-DMAC7.html)
CN (2) CN102522300B (cg-RX-API-DMAC7.html)
TW (3) TWI472884B (cg-RX-API-DMAC7.html)
WO (1) WO2010021543A1 (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796644B2 (en) 2008-08-18 2014-08-05 Mapper Lithography Ip B.V. Charged particle beam lithography system and target positioning device
CN102735163B (zh) 2011-03-30 2017-05-10 迈普尔平版印刷Ip有限公司 干涉仪模块
JP5844468B2 (ja) * 2011-09-12 2016-01-20 マッパー・リソグラフィー・アイピー・ビー．ブイ． ターゲット位置決め装置、ターゲット位置決め装置を駆動する方法、およびそのようなターゲット位置決め装置を備えているリソグラフィシステム
WO2013039387A1 (en) 2011-09-12 2013-03-21 Mapper Lithography Ip B.V. Guidance for target processing tool
JP6181189B2 (ja) 2012-09-27 2017-08-16 マッパー・リソグラフィー・アイピー・ビー．ブイ． 多軸微分干渉計
JP6761279B2 (ja) * 2016-05-16 2020-09-23 キヤノン株式会社 位置決め装置、リソグラフィー装置および物品製造方法
JP2021502669A (ja) * 2017-11-10 2021-01-28 エーエスエムエル ネザーランズ ビー．ブイ． 電子ビーム検査ツール、及びオブジェクトテーブルを位置決めする方法
WO2019158448A1 (en) * 2018-02-14 2019-08-22 Asml Netherlands B.V. Substrate positioning device and electron beam inspection tool
JP7391735B2 (ja) * 2019-09-25 2023-12-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830612A (en) * 1996-01-24 1998-11-03 Fujitsu Limited Method of detecting a deficiency in a charged-particle-beam exposure mask

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514858A (en) * 1983-03-15 1985-04-30 Micronix Partners Lithography system
JPH0644093Y2 (ja) * 1986-01-10 1994-11-14 東芝機械株式会社 ステ−ジ駆動装置
JPH0652302B2 (ja) * 1986-12-01 1994-07-06 キヤノン株式会社 直動ステ−ジ
JP2960423B2 (ja) * 1988-11-16 1999-10-06 株式会社日立製作所 試料移動装置及び半導体製造装置
JPH03237709A (ja) * 1990-02-14 1991-10-23 Mitsubishi Electric Corp 電子ビーム露光装置
US5684856A (en) * 1991-09-18 1997-11-04 Canon Kabushiki Kaisha Stage device and pattern transfer system using the same
JP2714502B2 (ja) * 1991-09-18 1998-02-16 キヤノン株式会社 移動ステージ装置
JP2902225B2 (ja) * 1992-09-30 1999-06-07 キヤノン株式会社 位置決め装置
US5806193A (en) * 1995-11-09 1998-09-15 Nikon Corporation Tilt and movement apparatus using flexure and air cylinder
JPH09197653A (ja) * 1996-01-24 1997-07-31 Fujitsu Ltd 荷電粒子ビーム露光に於けるマスクパターン検査方法及び荷電粒子ビーム露光装置
JPH11191585A (ja) * 1997-12-26 1999-07-13 Canon Inc ステージ装置、およびこれを用いた露光装置、ならびにデバイス製造方法
US6559456B1 (en) * 1998-10-23 2003-05-06 Canon Kabushiki Kaisha Charged particle beam exposure method and apparatus
JP4209983B2 (ja) * 1999-01-21 2009-01-14 住友重機械工業株式会社 ステージ機構
JP2001126651A (ja) * 1999-10-22 2001-05-11 Hitachi Ltd 電子ビーム描画装置
DE60032568T2 (de) * 1999-12-01 2007-10-04 Asml Netherlands B.V. Positionierungsapparat und damit versehener lithographischer Apparat
EP1107067B1 (en) * 1999-12-01 2006-12-27 ASML Netherlands B.V. Positioning apparatus and lithographic apparatus comprising the same
JP2001344833A (ja) * 2000-06-01 2001-12-14 Fujitsu Ltd 電子ビーム描画装置
US20030230729A1 (en) 2000-12-08 2003-12-18 Novak W. Thomas Positioning stage with stationary and movable magnet tracks
JP2004055767A (ja) * 2002-07-18 2004-02-19 Canon Inc 電子ビーム露光装置及び半導体デバイスの製造方法
EP3671804A1 (en) * 2002-10-30 2020-06-24 ASML Netherlands B.V. Electron beam exposure system
JP3842203B2 (ja) * 2002-11-07 2006-11-08 株式会社荏原製作所 基板処理装置
JP2004327121A (ja) * 2003-04-22 2004-11-18 Ebara Corp 写像投影方式電子線装置
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP4426276B2 (ja) * 2003-10-06 2010-03-03 住友重機械工業株式会社 搬送装置、塗布システム、及び検査システム
JP2005235991A (ja) * 2004-02-19 2005-09-02 Riipuru:Kk 転写装置
JP2005268268A (ja) * 2004-03-16 2005-09-29 Canon Inc 電子ビーム露光装置
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
US7012264B2 (en) * 2004-06-04 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7406367B2 (en) * 2004-08-26 2008-07-29 Shimano Inc. Input circuit for bicycle component
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
US7348752B1 (en) * 2006-09-20 2008-03-25 Asml Netherlands B.V. Stage apparatus and lithographic apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830612A (en) * 1996-01-24 1998-11-03 Fujitsu Limited Method of detecting a deficiency in a charged-particle-beam exposure mask

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平3-237709A 1991.10.23
JP特开平11-191585A 1999.07.13

Also Published As

Publication number Publication date
JP2012500492A (ja) 2012-01-05
TWI472884B (zh) 2015-02-11
JP5628808B2 (ja) 2014-11-19
TWI468879B (zh) 2015-01-11
EP2313908A1 (en) 2011-04-27
KR101785238B1 (ko) 2017-10-12
CN102522300A (zh) 2012-06-27
JP6117149B2 (ja) 2017-04-19
CN102187424B (zh) 2013-07-17
JP2014238402A (ja) 2014-12-18
TW201009519A (en) 2010-03-01
EP2819146B1 (en) 2017-11-01
KR101690338B1 (ko) 2016-12-27
CN102187424A (zh) 2011-09-14
KR20160145209A (ko) 2016-12-19
JP5539468B2 (ja) 2014-07-02
JP2013038426A (ja) 2013-02-21
TW201250411A (en) 2012-12-16
KR20110055678A (ko) 2011-05-25
TWI544294B (zh) 2016-08-01
WO2010021543A1 (en) 2010-02-25
EP2313908B1 (en) 2014-09-24
EP2819146A1 (en) 2014-12-31
TW201508425A (zh) 2015-03-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20190506

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: Delft

Patentee before: Mapper Lithography IP B. V.

TR01 Transfer of patent right