CN102456640A - 基板 - Google Patents

基板 Download PDF

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CN102456640A
CN102456640A CN2011103662113A CN201110366211A CN102456640A CN 102456640 A CN102456640 A CN 102456640A CN 2011103662113 A CN2011103662113 A CN 2011103662113A CN 201110366211 A CN201110366211 A CN 201110366211A CN 102456640 A CN102456640 A CN 102456640A
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substrate
reinforce
matrix
radiator
aluminium
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CN102456640B (zh
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L·费勒
S·哈特曼
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Hitachi Energy Co ltd
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ABB T&D Technology AG
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Abstract

本发明涉及基板、特别用于功率模块(10)的基板，其包括由金属、特别是铝形成的基体(38)，其中在所述基体(38)中提供互相并列的至少两个增强物(42)，并且其中这些增强物(42)互相隔开。根据本发明的基板(34)使该基板(34)和散热器(36)之间的接触能够改善并且此外还提供增强的耐久性。

Description

基板
技术领域
本发明涉及基板、特别是用于功率模块的基板。
背景技术
热管理是功率模块封装或高功率半导体的关键问题之一，因为功率半导体的使用导致损耗，其产生热。在芯片(die)处产生的热必须通过散热器排出到环境中。模块安装在该散热器上并且热流过模块的内部结构、通过基板到散热器，在该散热器中基板是热阻的主要贡献之一。因此，基板的热阻的优化和降低对高功率半导体模块的热管理和可靠性以及寿命有重大影响。
从EP 2 012 354 A1获知用于功率模块的基板，其包括铝碳化硅复合物和铝层，这些铝层在该铝碳化硅复合物的相应主平面上形成，这些铝层由包含铝作为主要成分的金属制成。为了减小基板与散热鳍片或散热器之间的间隙，基板形成为具有凸起的弓形。
从EP 1 973 157 A1获知用于功率模块的基板，包括：铝碳化硅复合物，其是用包含铝作为主要成分的金属浸渍的平板型的碳化硅多孔体；和仅在该铝碳化硅复合物的主平面中的一个上形成的铝层，其由包含铝作为主要成分的金属制成。再次，基板形成为具有凸起的弓形以便减小基板与散热鳍片或散热器之间的间隙。
这些基板具有适应于散热器表面的形貌或粗糙度的有限能力。这可导致在基板和散热器的表面之间形成体积大的空穴，由此降低散热性。此外，这些基板通常固定于功率模块的内部结构以及固定于具有内张力的散热器以便获得足够的散热性。因此，可能存在基板开裂的风险。
从PCIM 2009欧洲会议议程Ayumi Maruta、Mitsuharu Tabata的2500A/1200V双IGBT模块获知的是功率模块的布局，该功率模块包括冷却鳍片，在其上设置多个分开的基板或基板段。
在基板与散热器联接的情况下，通常具有高导热率的散热油脂、凝胶或垫施加于要联接的部分，并且基板由螺钉穿过基板的外围部分中提供的孔而固定到散热器或散热单元。在如上文描述的布局中，有时不能完全避免在相应的基板之间形成间隙。这些间隙的形成从而可导致通过这些间隙的油脂泄露或导致例如凝胶、其他微粒或类似物的低分子量的分子等物质从模块内部扩散到外部。油脂的损耗可导致从基板到散热器的散热效果可能降低的劣势。
发明内容
因此本发明的目的是提供改进的基板，其将消除本领域中已知的劣势中的至少一个。
该目的由根据权利要求1的基板实现。本发明的优选实施例在从属的权利要求中限定。
根据本发明的基板特别适合于功率模块。该基板包括由金属(特别是铝)形成的基体，其中在所述基体中提供互相并列的至少两个增强物，并且其中这些增强物互相隔开。
因此，根据本发明，基板具有至少两个独立的并且分开的增强物，其可充当热分散器(heat spreader)的作用以从功率模块或从功率模块的内部结构排出热到散热器。分开的增强物由此设置在基体中并且从而可形成嵌件，其优选地全部嵌入基体中。
增强物与基体相比由此更坚硬(stiff)，该基体进而与增强物相比更有延展性(ductile)。从而稳定性主要由增强物形成，而基体本身由更柔韧的材料形成。优选地，更有延展性的基体材料完全环绕坚硬的增强物并且使增强物结合在一起。
由于增强物(其具有大的结构强度)的不连续结构，基板在某些限制内整体上是柔韧的，尤其在增强物之间的间隙处。如果基体由例如铝等延展性金属形成，则该效果尤其明显。根据本发明，在这方面，由铝形成的基体意味着基体由纯铝或具有铝作为主要构成的金属形成。
因为增强物本身可互相独立地做出反应，根据本发明的基板从而可非常好地适应于散热器表面的几何形状和形貌。尽管散热器可能会有粗糙表面或不期望的不平整，该适用性导致散热器的表面和基板之间非常紧密的接触。该非常紧密的接触导致防止在散热器的表面和基板之间的许多体积大的绝热空穴并且从而导致基板之间传热改善。包括根据本发明的基板的功率模块的散热性因此改善。
另外，由于提供独立的和分开的增强物，基板中的内应力大大减小，这导致开裂的风险低很多和从而毁坏基板的风险低很多。基板的耐久性或寿命从而提高。接着，功率模块内部的应力减小。作为示例，在功率模块的安装期间提供较小的衬底弯曲。
此外，由于不连续和分开的增强物设置在连续的和更有延展性的基体材料中这一事实，散热器整体上由基板覆盖。因此，例如由于温度升高引起的散热油脂泄露可安全地避免。如此，泄露将导致散热性降低，散热性的耐久性提高。因此，提供如在目前技术发展水平中已知的若干基板的劣势被消除。另外，污染可安全地避免。
增强物以及环绕材料(即基体)优选地采用板型的方式形成。根据本发明，词语“板型”将意指宽度和/或长度相对于高度较大。这使基板能够在功率模块中很好地引入和使用，由此能够使散热性良好。
在本发明的优选实施例中，沿着基板的长度以及沿着基板的宽度在基体中提供多个用于使基板固定到散热器的通孔，其中在沿着基板的宽度的通孔之间没有提供增强物。详细地，沿着基板的长度优选地提供两个以上通孔，而沿着宽度两个通孔可以是足够的。这使基板能够提高柔韧性并且此外减小基板内部的应力。在基体的区域中，材料是有延展性的，从而使基板例如能够牢固地固定到散热器。
沿着宽度或沿着长度将意指大致上在宽度或长度方向上延伸的一条线中提供通孔。宽度由此将意指基板的较短的边，而长度将意指基板的较长的边。
在本发明的另外的优选实施例中，该至少两个增强物由碳化硅(SiC)形成。这是陶瓷增强物，其具有导致复合物良好稳定性的高的机械强度。此外，碳化硅陶瓷在它们的寿命期间不改变它们的形状、体积或性质。例如而且铝尤其结合由铝形成的基体时也具有关于耐久性和热稳定性的良好的稳定性能，安装的基板没有塑性变形和内裂发生。
另外，碳化硅展现高的导热率，其位于超过180W/mK的范围中，特定地在180W/mK-200W/mK的范围中。因此，该材料和从而根据本发明的基板具有非常好的排热性能。然而，可使用适合的每个材料组合。
根据本发明的另外的实施例，增强物设置成互相距离在1mm至5mm的范围中，特定地是3mm。该设置允许用增强物良好地覆盖散热器，由此允许增强物互相独立地起作用并且基板是柔韧的。这使基板能够与散热器的表面紧密地接触。
根据本发明的再另外的实施例，基板至少部分形成为弓形。这使在散热器的表面和基板之间潜在存在的间隙减小。因此，在该实施例中，基板与散热器的表面的接触可再进一步改善。由于提供独立的和分开的增强物，根据本发明的基板由此能够承受弯曲应力。
关于这方面，弓形的优选的几何形状可由最大弓形挠曲高度(其优选地是100μm±50μm)限定。这样的弓形具有关于散热器和基板之间的接触的改善的性质。
由于嵌入基体中的增强物互相分开这一事实，可仅在基板的宽度上形成弓形。在基板的全长上形成弓形是不必要的；该长度可减少至仅基板的一半或三分之一。在备选中，完全避免在基板的长度上的弓形。这导致必须按压或形成仅一个弯曲部分的优势。基板从而可生产为具有更高的再现性并且采用不太复杂的方式生产。
根据本发明的再另一个实施例，所有增强物一起具有相对于基板的尺寸至少70％的尺寸，特定地相对于基板的尺寸至少85％的尺寸。这导致足够高的排热性，其主要受到所述增强物的影响。然而，基板的柔韧性足以获得基板对散热器表面的优秀的适应性。另外，由于所述增强物的结构强度，可形成稳定的弓形，这些弓形甚至在将基板横跨到功率模块的内部结构的散热器之后保持它们的结构。该尺寸由此对应于相对于基体的表面或基板本身的尺寸的所有增强物的表面。
根据本发明的另一个优选的实施例，基体形成为在增强物上以及在增强物之间形成的金属层。在该实施例中，根据本发明的基板可采用容易的方式生产，其导致在形成期间节省成本以及节省时间。
在这方面，优选地是，增强物由金属层全部覆盖。这使根据本发明的基板能够具有增强的结构稳定性。此外，尤其如果延展性金属用于形成基体，基板和冷却鳍片之间的接触进一步改善。
根据本发明的另外的优选实施例，基板的热膨胀系数(CTE)的最大值位于8ppm/k-12ppm/k的范围中，特定地在10ppm/k。这使基板能够与功率模块的内部部件的热膨胀系数匹配。热应力从而可以最小化，这提高功率模块的耐久性。
附图说明
本发明的主旨的另外的特征、特性和优势在从属权利要求、图和相应的图和示例的下列说明中公开，其采用示范性的方式示出根据本发明的基板的一个实施例和示例。
在图中：
图1示出功率模块的设置的截面侧视图；
图2示出根据本发明的第一实施例的基板的顶视图和侧视图；
图3示出根据本发明的另外的实施例的基板的顶视图和侧视图；
图4示出根据本发明的另外的实施例的基板的顶视图和侧视图；
图5示出根据本发明的另外的实施例的基板的顶视图和侧视图；
图6a和6b示出根据目前技术发展水平的基板和散热器之间的接触与根据本发明的基板和散热器之间的接触的对比。
具体实施方式
在图1中，示意地示出功率模块10的设置。详细地，描述所述功率模块10的内部结构。该功率模块10包括外壳12，在其中设置至少一个功率半导体装置14。该半导体装置14采用示范性的方式可以是绝缘栅双极晶体管(IGBT)、二极管、金属氧化物半导体场效应晶体管(MOSFET)或类似物。根据图1，提供二极管和IGBT。该半导体装置14或多个半导体装置14通过端子16并且优选地通过辅助端子18能连接，其中该半导体装置14优选地由铝接合线20接合。
作为绝缘体，环氧树脂层22可设置在半导体装置14上。半导体装置14可进一步设置在衬底24上，该衬底24可形成作为氮化铝陶瓷绝缘体。端子16以及辅助端子18通过金属化结构26(特别是铜金属化结构)和焊料28(或lot)连接到衬底24。然而，可应用例如超声焊接等相当的连接。另外，衬底24在它的底侧连接到另外的金属化结构30，特别是铜金属化结构。外壳12内部余下的体积用例如绝缘凝胶32填充。
在操作期间，由于导电体中的电阻，功率模块10产生许多热能或热。因此，产生的热必须从功率模块10的内部排散到它的外部。为了该目的，功率模块10包括基板34。该基板34在它的上侧通过金属化结构30和焊料31与半导体装置14热接触，并且此外还与冷却鳍片或散热器36热接触。在基板34和散热器36之间提供例如散热油脂、凝胶或垫等导热层35。
一般地，散热器36由具有高导热率的材料形成并且其允许从功率模块10的内部排散热能或热到环境。从而，热从功率模块10的内部结构流动通过基板34和散热器36到功率模块10的外部以便保证功率模块10正常工作。
根据本发明的基板34在图2中示意地示出。该基板34包括由金属形成的基体38。优选地，基体38由铝形成。该金属相当有延展性并且可变形以获得与散热器36的表面非常紧密的接触。然而，基体38可由适合的任何金属形成。特定地，接着铝之后，包括铝作为成分并且尤其作为其主要成分的合金是优选的。
为了进一步改善基板34和散热器36之间的接触，基板34的表面粗糙度必须尽可能低。表面粗糙度的合适的值位于＜3μm的范围中，特定地＜2.3μm。这减少具有大体积的空穴的形成和基板34与散热器36之间的功率模块10的散热性恶化。
在基体38中，提供用于将基板34固定到散热器36的通孔40。因为增强物42难以加工，这些通孔40在基体38或块状材料中形成。基板34固定到散热器36可由旋进所述散热器36中的螺钉或通过将基板34牢固地固定到散热器36的另一个连接实现。
为了能够良好散热，至少两个增强物42设置在基体38中。这些增强物42互相分开，使得它们彼此并列安置但相隔设置。特别地，这些增强物42典型地由陶瓷化合物(尤其是碳化硅(SiC))制成并且因此提供优秀的导热性。碳化硅特别允许这些增强物42具有良好的结构强度并且此外还具有良好的散热性。
优选地是，沿着基板34的长度以及宽度在基体38中提供多个通孔40，其中在沿着基板34的宽度的这些通孔40之间没有提供增强物42。
图2的实施例包括非限制性方式中的三个增强物42。它们嵌入基体38的金属中并且优选地由所述金属或基体38完全覆盖。在优选的示例中，基体38和从而基板34可具有在120mm×160mm至170mm×210mm的范围中的尺寸。在特别优选的示例中，基板34可在137mm×187mm的尺寸中形成。每个增强物可形成至少50mm×100mm的尺寸，在优选的实施例中是57mm×104mm。
在根据图2的示例中，增强物42全部嵌入基体38的延展性材料或铝材料中。另外，增强物42的陶瓷材料的空穴或孔用基体38的材料(特别是铝)完全填充，该基体38的材料从而优选地完全覆盖增强物以及增强物与增强物之间的所有间隙。
基板34必须满足不同的功能/要求。它必须将热从功率模块10的内部传导到环境。基板34从而充当热分散器的作用以将它的表面上的热传到散热器36。因此导热率必须尽可能高(＞180W/(mK)(20℃))。这通过用铝形成基体38和通过分别使用碳化硅作为嵌件或增强物42的材料而实现。
为了获得基板34和散热器36之间尽可能紧密的表面接触，基板36的底侧可弯曲。这在沿着线B-B’的剖视图中明显可见，其由图2中的标号X限定。由于基板34的弯曲的几何形状或弓形的形成，在固定到散热器36期间，基板34横跨散热器36，这导致基板34与散热器36的改善的接触。然而，根据本发明，基板34仅部分形成为弓形，这是足够的。这意指弯曲部分可局限于在基板34的宽度上形成的弓形，如可以从图1的剖视图X中看到的。相比之下，在基板34的长度上的弯曲部分是不必要的，如可从横穿线A-A’的剖视图中看到的，其由图1中的标号Y限定。然而，根据基板34的期望的性质，当然能够形成具有沿着基板34的长度(例如沿着全长、半长或三分之一长)的弓形的基板34。根据本发明，宽度是相对于基板的长度的基板的较短的边。
另外，根据本发明的基板34的最大弓形挠曲高度可是100μm±50μm。
良好的抗弯强度和断裂韧度从而对于防止开裂是有用的。基板34的抗弯强度可位于300MPa和500MPa之间的范围中，特定地在400MPa，而断裂韧度可位于7MPa m1/2至9MPa m1/2的范围中，特定地在8.1MPa m1/2。
根据本发明制备基板34的过程可如下。
首先，生产陶瓷预制件。这可例如通过烧结例如具有开孔(特别是泡沫形式的)的陶瓷材料(优选地是碳化硅)而实现。在另外的步骤中，如必要的话，这样制备的预制件可进行形状加工。作为示例，该预制件可冲压或加工以获得期望的形状或几何形状。该预制件的形状优选地是长方形或正方形。然而，根据散热器36的几何形状，增强物42可具有可安置在散热器36上使得基板34与所述散热器36紧密接触的任何形状。在采用期望的方式将预制件进行形状加工后，这些预制件中的至少两个置于模板中。然后，液态金属(优选地是铝)在高温和高压下渗入该模板中，由此填充预制件的孔和复合物与复合物之间的间隙。关于增强物42的碳化硅的含量可以是62体积％-28体积％以获得最佳机械块体性质。另外，这些预制件优选地由金属全部覆盖。
描述的过程使增强物42能够嵌入金属材料中，这使金属材料能够形成在其中设置增强物42的基体38。因此，该基体38可通过用金属材料(优选地用铝)覆盖预制件而形成。
关于上文，优选地是，定位增强物42使得增强物42设置成具有1mm至5mm的范围中的距离，特定地是3mm。增强物42之间的这样的距离是基本的以提供基板34的足够的柔韧性。如果增强物42被安置离彼此太近，因为增强物42的刚度和结构强度，这样的柔韧性将被抑制。然而，为了获得足够的散热，增强物42的距离应该被限制。
另外，如果增强物42定位成互相之间的距离降到某一水平以下，在基体材料中将形成开裂的风险可由于塑性变形超过基体材料的潜能这一事实而发生。从而基体38和增强物42之间的接触带处的应力可太高。
在图3中，示出根据本发明的基板34的另外的示例。根据图3，同样是，基板34包括三个增强物42。然而，如可清楚地看到的，增强物42可具有相对于图2大得多的表面。根据图3，基体38或金属化合物主要由在增强物42上提供的层或金属涂层形成，由此填充相应的增强物42之间的间隙。在该情况下，散热能力相对于图2更大。
根据本发明的基板34的再另外的实施例在图4中示出。根据图4的实施例一般对应于图2的实施例。然而，根据图4，仅呈现两个而不是三个增强物42。在该实施例中，基板34本身可更小，这导致基板34可在更小的功率模块中使用的优势。通过提供连续基体38(在其中设置两个分开的增强物42)，基板34仍足够柔韧以导致基板34和散热器36的表面之间改善的接触。在该实施例的优选示例中，基体38和从而基板34可具有在120mm×100mm至170mm×150mm的范围中的尺寸。在特别优选的示例中，基板34可采用137mm×127mm的尺寸形成。每个增强物42可形成为至少50mm×100mm的尺寸，在优选的实施例中是57mm×104mm。
在图5中示出本发明的另外的实施例，其涉及基板34，该基板34仍包括两个增强物42。在该实施例中，该基板34与图3的相当，尤其关于增强物42的大小是相当的。
在图6a和6b中，示意地示出根据目前技术发展水平的基板46和散热器36的表面44之间的接触相对于根据本发明的基板34与散热器36的表面44之间的接触的对比。
根据图6a，示出根据目前技术发展水平的基板46，其与散热器36的表面44接触。该基板46包括由金属层50覆盖的增强物48。该金属层50以及该增强物48采用连续的方式形成。由于表面44的粗糙度，在该板46和该散热器36的表面44之间形成空穴52。这些空穴52一般防止该基板46和该散热器36之间良好的热流动，由此使散热性恶化。
根据图6b，示出根据本发明的基板34。该基板34包括连续基体38，在其中设置至少两个(根据图6b是三个)分开的和独立的增强物42。由于该基体38的柔韧性(尤其在这些增强物42之间的间隙区域中)，该基板34具有变形或弯曲并且从而适应于散热器36的表面44的形貌的能力。这允许潜在存在的空穴52小得多。因此，在该基板34和表面50之间达到更为紧密的接触。散热性从而提高。
对公开的实施例的其他变化形式可以被本领域内技术人员从对附图、公开和附上的权利要求的学习而在实践要求权利的发明中理解和实现。在权利要求中，单词“包括”不排除其他元件或步骤，并且不定冠词“一”不排除多数。纯粹的事实是，某些措施在互相不同的从属权利要求中陈述不指示这些措施的组合不可以有利地使用。在权利要求中的任何标号不应该解释为限制范围。
标号列表
  10   功率模块   12   外壳
  14   半导体装置   16   端子
  18   辅助端子   20   铝接合线
  22   环氧树脂   24   衬底
  26   金属化结构   28   焊料
  30   金属化结构   31   焊料
  32   绝缘凝胶   34   基板
  35   导热层   36   散热器
  38   基体   40   通孔
  42   增强物   44   表面
  46   基板   48   增强物
  50   金属层   52   空穴

Claims (10)

1.基板、特别是用于功率模块(10)的基板，其包括由金属、特别是铝形成的基体(38)，其中在所述基体(38)中提供互相并列的至少两个增强物(42)，并且其中所述增强物(42)互相隔开。
2.如权利要求1所述的基板，其中沿着基板(34)的长度以及宽度在所述基体(38)中提供多个用于将所述基板(34)固定到散热器(36)的通孔(40)，其中沿着所述基板(34)的宽度的通孔(40)之间没有提供增强物(42)。
3.如权利要求1或2所述的基板，其中所述至少两个增强物(42)由碳化硅形成。
4.如权利要求1-3中任一项所述的基板，其中所述增强物(42)设置成互相距离在1mm至5mm的范围中，特别地是3mm。
5.如权利要求1-4中任一项所述的基板，其中所述基板(34)至少部分形成为弓形。
6.如权利要求5所述的基板，其中最大弓形挠曲高度是100μm±50μm。
7.如权利要求5或6所述的基板，其中弓形仅在所述基板(34)的宽度上形成。
8.如权利要求1-7中任一项所述的基板，其中所有增强物(42)一起具有相对于所述基板(34)的尺寸至少70％的尺寸，特定地相对于所述基板(34)的尺寸至少85％的尺寸。
9.如权利要求1-8中任一项所述的基板，其中所述基体(38)形成为在所述增强物(42)上和所述增强物(42)之间形成的金属层。
10.如权利要求1-9中任一项所述的基板，其中所述基板(34)热膨胀系数的最大值位于8-12ppm/k的范围中，特定地在10ppm/k。
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