CN102422430A - 在半导体衬底上生成接触的方法 - Google Patents

在半导体衬底上生成接触的方法 Download PDF

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CN102422430A
CN102422430A CN2010800196854A CN201080019685A CN102422430A CN 102422430 A CN102422430 A CN 102422430A CN 2010800196854 A CN2010800196854 A CN 2010800196854A CN 201080019685 A CN201080019685 A CN 201080019685A CN 102422430 A CN102422430 A CN 102422430A
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于尔根·科勒
托比亚斯·罗德
彼得·格拉比茨
于尔根·沃纳
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Universitaet Stuttgart
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Abstract

本发明涉及一种在半导体衬底(10)上，特别是在太阳能电池上生成接触的方法，在所述方法中，利用LIFT方法(激光诱导前进转移法)在待接触表面生成金属种植结构(26)，随后对所述种植结构(26)进行强化。此外，透过位于待接触表面的覆盖层(12)在衬底表面生成所述种植结构。

Description

在半导体衬底上生成接触的方法
技术领域
本发明涉及一种在半导体衬底上，特别是在太阳能电池上生成接触的方法。
背景技术
在小规模的情况下，通过对利用平版印刷法预制结构的试样进行蒸镀，能够在太阳能电池上生成特别好的接触。但是，因为需要太多的步骤，而且蒸镀整个试样将损失所用金属中的大部分，所以这种方法对于大型工业生产来说过于昂贵。
出于这个原因，工业中广泛采用网版印刷法在太阳能电池上制造接触。这种方法的缺点是为了制造与太阳能电池的接触必须有高温步骤。而且，网版印刷线的接触电阻约为10-3至10-2Ohm cm2，大于蒸镀生成的接触。玻璃烧结以及线的多孔性使得线的导电性与用纯金属制成的线相比降低大约4倍。另一个缺点是网版印刷线的高宽比，20μm左右的线高将最小线宽限制在约100μm。
由此人们提出了一系列替代方法生产太阳能电池上的接触，但它们均显示出一定的缺点。
DE 199 15 666 A1公开了一种在太阳能电池上生成选择性接触的方法，在这一方法中，先对待接触表面覆以一层介电惰性层。通过激光烧蚀，也就是说，通过在烧蚀路径上的直接的激光作用，将惰性层除去，直到位于惰性层下方的裸表面暴露出来。在待接触表面局部露出之后，通过在背面进行全面金属包覆或在正面利用包含镀层强化的剥离技术(Lift-Off-Technik)，生成选择性接触。不过在这种方法中，为了达到优良的电阻值，通常要在超过300℃的温度下对接触进行后续处理，这意味着限制了惰性层的可选择性的附加生产步骤。
DE 100 46 170 A1公开了另一种在太阳能电池上生成接触的方法，在这一方法中，在太阳能电池的惰性介电层上覆盖金属层，并利用射线源进行短暂局部点加热或线加热，以生成由金属层、介电层和半导体构成的混合熔融物，经固化后便会提供半导体与金属层之间的良好的电接触。
用这种方法生产的覆层的接触电阻仍然并不总是令人满意。
DE 10 2006 030 822 A1公开了另一种在太阳能电池上生成接触的方法，在这一方法中，使用含有金属的墨汁，利用喷墨法将金属层覆盖到太阳能电池表面。接着为了使覆盖的金属浆与半导体形成接触，在大约400℃进行一个温度处理步骤。在这个工艺步骤结束之后，将生成的接触线在电解池中进行镀膜强化。
这一类的喷墨方法有一个本质上的缺点，即接触材料的选择严重受限，因为材料必须被制备成含金属的墨汁。此外，接触电阻并非总是令人满意。最后，附加的热处理步骤也被视为一种缺点。
此外，在现有技术中，用激光烧结法在太阳能电池上生成接触是公知的。根据DE 10 2006 040 352 B3，首先将金属粉末覆盖到衬底上，接着借助激光射线对金属粉末进行局部烧结或熔融，然后将未烧结或未熔融的金属粉末去除。
这种方法的问题在于，必须通过一个特殊的过程步骤将未被烧结的材料重新分离出来或者重新收集起来，这首先意味着高的材料使用量，接下来还可能导致材料损失。此外，为了达成良好的接触电阻还必须在250到400℃进行温度后续热处理，以保证完全烧结。
发明内容
在此背景下，本发明的目的在于，提出一种适合于在半导体衬底上，特别是在太阳能电池上生成接触的方法，使得在较少浪费的情况下制成尽可能高质量的接触成为可能。
根据本发明，该目的通过一种在半导体衬底上，特别是在太阳能电池上生成接触的方法来实现，在这种方法中，通过LIFT方法在待接触表面产生金属种植结构，随后对此种植结构进行强化。
通过这种方法本发明的目的得到完全地实现。
LIFT方法(Laser Induced Forward Transfer激光诱导前进转移法)原则上在现有技术中公知(参见US 4,970,196)。在LIFT方法中，在待覆层的衬底上放置带有一薄层待覆盖材料的透明的承载材料。借助于激光射线穿过透明承载层对覆层材料进行强烈局部加热，使其从承载材料上脱离并且凝聚在与之直接相邻的衬底上。在更高的激光强度下，特别是在使用脉冲激光的情况下，材料强烈受热以至于达到沸点，使得所述材料转移到衬底表面的过程受到金属蒸汽压的辅助和驱动。
根据本发明，为了接触半导体衬底，使用这种从薄金属层向半导体衬底转移物质的原则上公知的方法。通过后续强化由LIFT方法生成的种植结构，获得具有优良导电性的粘结牢固的接触。
LIFT方法的运用允许用非常少的浪费生产高质量的接触。与网版印刷法相比，利用LIFT方法得到明显较好的接触电阻。因为结构化时不必使用掩模，所以LIFT方法十分灵活。与描绘式方法相比，LIFT方法更容易实施结构(线宽、线的位置、线高等等)的改变。为此，仅须相应地单独控制激光，例如借助于扫描仪器。此外，大量的金属都可以通过LIFT方法沉积。而且可以生产非常细的线，以致正面的太阳能电池被遮盖的部分很少，这对于提高太阳能电池的效率有利。最后，能够在大范围内设置线的高宽比(高比宽的比例)。这样，能够缩小线宽但却不降低线的导电性。
根据本发明的另一种设计，通过电镀法或者无电流方法实现种植结构的强化。
尽管原则上也可以使用其它方法强化种植结构，但电镀法用低成本的方式生产优良导电性的层，是一种成本非常低廉的方法。
根据本发明的另一种设计，种植结构穿过覆盖层生成于衬底表面上。
根据本发明，在LIFT方法中能够用产生的能量透过通常附着于衬底表面的覆盖层直接生成金属种植结构。通常太阳能电池的正面会设置具有介电性能的防反射层。由于LIFT方法中局域能量足够高，能够穿过覆盖层或防反射层直接将种植结构“射”到衬底表面上。
这意味着不必附加工序便可低成本且很有效地生成接触。通过合适的方法，能够透过太阳能电池背面上的惰性层直接在衬底上生成种植结构。
可以理解，从原则上说，只要相应地控制激光能量，透过一系列的层直接在衬底表面上生成种植结构也是可能的。
根据本发明的另一种设计，利用LIFT方法在半导体衬底上首先生成由第一种金属构成的种植结构，随后用另一种金属强化。
举例来说，能够先在衬底表面加工具有优良附着性且扩散很少的种植结构。这一层能够用另一种具有明显较高导电性的金属如银或铜强化。其中第一层能够起到隔绝扩散的作用。例如此处可以运用镍层。
也可以先利用LIFT方法生成由第一种金属构成的种植结构，然后再通过LIFT方法生成由另一种金属构成的扩展层。
进一步地，也可以在用另一种金属将种植结构覆盖之前，先用同种金属对该种植结构进行强化。这仍能够通过如电镀法实现。
在LIFT方法中优先使用脉冲激光。
其中，使用至少40纳秒的脉冲持续时间具有特别优势。
由此可以减小粒子的散射，这对生产的接触层的质量产生有利影响。
其中，焦点为微长形
Figure BDA0000105173660000041
的激光射线，特别是焦点为椭圆形的激光射线，具有特别优势。
更进一步，根据本发明的另一种设计，在薄膜载体上的初级种植结构可以借助LIFT方法通过卷对卷电子印刷术(Roll-to-Roll-Prozess)转移到衬底表面。
利用这种方式，能够实现适合于大型流水生产线的特别低成本的生产。在卷对卷方法中，能够通过在每一次激光写入过程之后横向移动薄膜载体，实现对薄膜载体上的金属层非常充分的材料利用。
可以理解，上述以及下文即将陈述的本发明的特征，在本发明的范围内，不仅能够通过各个已经给出的组合加以应用，也能够通过其他组合或者单独地加以应用。
附图说明
下面将参照附图通过对优选的实施例的描述来阐述本发明的更多特征和优点。其中：
图1示出了太阳能电池的电流电压特征曲线，该太阳能电池正面具有利用LIFT方法生成并用电镀强化的镍接触；
图2示出了利用LIFT方法覆盖的镍层的接触电阻与激光射线运行速度之间的依赖关系；
图3a)，b)，c)示出了利用LIFT方法覆盖金属的层各个阶段的示意图；
图4a)，b)示出了通过电镀法对事先生成的种植结构进行电镀强化的示意图。
具体实施方式
下面参照图3详细说明LIFT方法的原理。
在太阳能电池的生产中，太阳能电池的正面和背面必须提供金属接触。例如在图3a)，b)，c)中，p型掺杂的基材(硅晶片或多晶硅)用11标示，在基材正面有一层由n型掺杂材料构成的层，形成发射极。衬底层10配备有覆盖层12，该覆盖层为防反射层，例如层厚为50至100nm的氮化硅层。
利用LIFT方法，透过所述覆盖层12直接在衬底层10的表面上生成金属种植结构(Saatstruktur)26。为此，在紧邻衬底层10前方设置呈薄玻璃层状或薄膜状的承载材料14，在承载材料朝向衬底层10的一面配备薄金属层16。此处可以是例如镍层。
图3b)示出了部分金属如何借助于激光射线24从薄金属层16局部地脱落以及根据图3c)如何透过覆盖层12直接射到衬底层10的表面上。为此，使用脉冲激光18，所述脉冲激光18穿过透镜20和狭缝22定向为激光射线24，透过透明的承载层14射向金属层16。通过脉冲激光射线的高能量，金属层16将局部脱落及气化透过覆盖层12，如图3所示在衬底层10的表面上凝聚为种植结构26。这一层之所以在此被称为“种植结构”，是因为通常通过附加的工艺步骤例如电镀步骤对这一层进行强化。
显然，在图3中的图示仅仅是单纯的示意图而并不是按照真实尺寸比例绘制的。此外，可以理解，只要能量以合适的方式定量输入，利用LIFT方法能够透过多个层生成种植结构26。
LIFT方法中优先使用脉冲持续时间大约40纳米的脉冲激光。例如，可以使用波长为532nm或1064nm的Nd:YAG激光(掺钕钇铝石榴石激光)。原则上，LIFT方法在很大程度上与波长无关。当然根据待转移的金属及其吸收性能，特定的波长也可以是优选的。
随后，将根据图3a)，b)和c)所述生成的种植结构根据图4进行强化，正如在图4b)中所示意画出的一样。为此，使用例如电镀法或是无电流方法。在此生成具有高导电性的强化结构28。强化结构28可由与种植结构26相同或相异的材料构成。
使用LIFT方法使得在敷设接触结构时所允许选择的形状的范围很大。例如，能够利用扫描仪器以合适的方式控制激光射线，以便在衬底表面10上生成期望的种植结构。
图1示出了太阳能电池的电流电压特征曲线，该太阳能电池正面具有利用LIFT方法生成的镍接触。在此，直接透过防反射层在晶片上(n型掺杂硅发射极)生成种植结构，并随后将其电镀强化。该特征曲线说明，用这种方法生产的位于太阳能电池正面的接触使得太阳能电池质量很高。
图2示出了接触电阻与运行速度之间的依赖关系。较高运行速度产生较低的接触电阻。最好的接触电阻出现位于覆盖在玻璃上的250nm厚的镍层上的、平面电阻为每平方米55Ohm的发射极处，为3×10-5Ohm cm2。
对太阳能电池背面的接触也可以优先运用LIFT方法。
对于背面接触，同样期望与非接触面积相比接触面积很小。非接触面积通过惰性层予以保护，从而使太阳能电池效率更高。
n型材料优选与银、钛和镍接触。与之相对，p型材料最好与其它金属如铝接触。根据各种待接触层选择各种材料，并使用LIFT方法。后续的强化步骤中可以运用相同的或其它的材料。所以例如可以首先利用LIFT方法生成作为扩散隔绝层的镍层，接着先进行电镀强化，随后再同样用电镀法产生铜层。
所使用的激光焦点为椭圆形，宽度约为5μm，长度约为20至30μm。

Claims (15)

1.一种在半导体衬底(10)上，特别是在太阳能电池上生成接触的方法，在此方法中，利用LIFT方法(激光诱导前进转移法)在待接触表面上生成金属的种植结构(26)，随后对所述种植结构(26)进行强化。
2.根据权利要求1所述的方法，其中：通过电镀法或无电流方法对种植结构(26)进行强化。
3.根据权利要求1或2所述的方法，其中：透过覆盖层(12)在衬底表面(10)上生成种植结构(26)。
4.根据权利要求3所述的方法，其中：透过防反射层，特别是在太阳能电池正面生成种植结构(26)。
5.根据权利要求3所述的方法，其中：透过惰性层，特别是在太阳能电池背面生成种植结构(26)。
6.根据上述权利要求中任一项所述的方法，其中：首先利用LIFT方法在半导体衬底上生成由第一种金属构成的种植结构，随后用另一种金属对所述种植结构进行强化。
7.根据上述权利要求中任一项所述的方法，其中：首先利用LIFT方法在半导体衬底上生成由第一种金属构成的种植结构，随后在第一层种植结构上利用LIFT方法生成至少一层由其它金属构成的其它的层。
8.根据权利要求6或7所述的方法，其中：第一层种植结构构造为扩散隔绝层。
9.根据权利要求8所述的方法，其中：第一层种植结构由镍或镍合金制造。
10.根据权利要求6至9中任一项所述的方法，其中：在用另一种金属覆盖第一层种植结构之前，首先用同种金属强化第一层种植结构。
11.根据上述权利要求中任一项中所述的方法，其中：在LIFT方法中使用脉冲激光(18)。
12.根据权利要求11中所述的方法，其中：使用的激光(18)的脉冲持续时间至少为40内秒。
13.根据上述权利要求中任一项中所述的方法，其中：在LIFT方法中使用的激光射线焦点为长形，首选为椭圆形。
14.根据上述权利要求中任一项中所述的方法，其中：利用LIFT方法，通过卷对卷方式将第一层种植结构从薄膜载体(14)转移到衬底表面上。
15.一种太阳能电池，具有至少一个触头，所述触头具有利用LIFT方法生产的金属的种植结构(26)，所述种植结构具有电镀产生的强化结构(28)。
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