WO2010127764A2 - Verfahren zum kontaktieren eines halbleitersubstrates - Google Patents
Verfahren zum kontaktieren eines halbleitersubstrates Download PDFInfo
- Publication number
- WO2010127764A2 WO2010127764A2 PCT/EP2010/002364 EP2010002364W WO2010127764A2 WO 2010127764 A2 WO2010127764 A2 WO 2010127764A2 EP 2010002364 W EP2010002364 W EP 2010002364W WO 2010127764 A2 WO2010127764 A2 WO 2010127764A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- seed structure
- layer
- produced
- lift process
- metal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 91
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 6
- 230000002787 reinforcement Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 24
- 239000000463 material Substances 0.000 description 16
- 238000007650 screen-printing Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000012803 melt mixture Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/03001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/03003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring a preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/031—Manufacture and pre-treatment of the bonding area preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/033—Manufacturing methods by local deposition of the material of the bonding area
- H01L2224/0333—Manufacturing methods by local deposition of the material of the bonding area in solid form
- H01L2224/03334—Manufacturing methods by local deposition of the material of the bonding area in solid form using a preform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/03505—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13006—Bump connector larger than the underlying bonding area, e.g. than the under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a method for contacting a semiconductor substrate, in particular for contacting solar cells.
- a method for the selective contacting of solar cells in which a surface to be contacted with a dielectric passivation layer is coated and this passivation layer by laser ablation, ie by direct laser light exposure by way of ablation is removed until the underlying bare surface is exposed.
- a selective contacting is effected by full-surface metal application for the back or a lift-off technique with subsequent galvanic reinforcement for the front.
- the contact In order to achieve good resistance values, however, the contact generally has to be aftertreated at temperatures above 300 ° C., which means an additional process step which also restricts the choice of the passivation layers.
- a further method for contacting solar cells is known from DE 100 46 170 A1, in which a metal layer is applied to the passivating, dielectric layer of a solar cell and locally locally heated in points or lines by means of a radiation source, so that a melt mixture is formed Metal layer, dielectric layer and the semiconductor forms, which should provide a good electrical contact between the semiconductor and the metal layer after solidification. Nevertheless, the contact resistances of the layer thus produced are not satisfactory in every case.
- the object of the invention is to provide a method for contacting a semiconductor substrate, which is suitable in particular for contacting solar cells and which enables as high-quality as possible contacting with little effort.
- This object is achieved by a method for contacting a semiconductor substrate, in particular for contacting solar cells, in which a metallic seed structure is produced on the surface to be contacted by means of a LIFT process and the seed structure is subsequently reinforced.
- the LIFT (Laser Induced Forward Transfer) process is basically known in the art (see US 4,970,196).
- an optically transparent carrier material with a thin layer of the material to be applied is placed in front of a substrate to be coated.
- the material to be applied is heated locally through the optically transparent support layer to such an extent that it dissolves from the support material and deposits on the immediately adjacent substrate.
- the material heats up so much that it reaches the vaporization point and that the transfer process to the substrate surface is assisted and driven by the metal vapor pressure.
- this basically known method for transferring thin metal layers to a semiconductor substrate is used in order to contact it.
- a subsequent reinforcement of the seed structure produced by the LIFT process results in a well-adhering contacting with good conductivity.
- the use of the LIFT process allows the production of high-quality contacts with very little effort. This results in significantly better contact resistance. conditions than the screen printing process.
- the method is very flexible, since no mask has to be used for structuring. Changes to the structure (line width, position of the lines, line height, etc.) are easier to implement than with imaging methods. For this purpose, only the laser must be controlled accordingly, for example with the help of a scanner.
- a variety of metals can be deposited using the LIFT process.
- very thin lines can be displayed, so that there is a low coverage of the solar cell surface at the front, which is advantageous for the efficiency of the solar cell.
- the aspect ratio (height to width ratio) of the lines can be set in wide ranges. Thus, the width of the lines can be reduced without reducing the conductivity of the lines.
- the reinforcement of the seed structure by a galvanic process or an electroless process.
- a galvanic method is a very cost-effective method with which layers of good conductivity can be produced in a cost-effective manner.
- the seed structure is produced through a cover layer on the substrate surface.
- the energy generated in the LIFT process can be used to directly produce the metallic seed structure through a covering layer usually adhering to the substrate surface.
- solar cells are provided on their front side with an antireflection coating which has dielectric properties.
- the seed structure can be "shot” directly onto the substrate surface through the cover layer or antireflection layer. This means a very cost-effective and highly effective contact without additional steps.
- the seed structure can be produced by a passivation layer on the backside of a solar cell directly on the substrate surface.
- a seed structure of a first metal is first produced by means of the LIFT process on the semiconductor substrate, which is then reinforced with another metal.
- the substrate surface which has a low diffusion.
- This layer can then be subsequently reinforced with another metal, e.g. with silver or copper, which has a much higher conductivity.
- the first layer can act as a diffusion barrier.
- this may be a nickel layer.
- the first seed structure may first be reinforced with the same metal before a layer of another metal is applied. This can in turn be done for example by a galvanic process.
- the LIFT process preferably uses a pulsed laser. It has proved to be particularly advantageous to use a pulse duration of at least 40 nanoseconds.
- an obliquely focused laser beam preferably a laser beam with an elliptical focus, has proved to be particularly advantageous.
- the first seed structure can be transferred from a film carrier in a roll-to-roll process to the substrate surface by means of the LIFT process.
- 1 shows the current / voltage characteristic of a solar cell with a Nickelkontak- tion on the front, which was produced by a LIFT process and galvanically reinforced; 2 shows the dependence of the contact resistance in one through an LIFT
- Fig. 4a b) the schematic representation of a galvanic reinforcement of a previously generated seed structure by a galvanic process.
- a p-type doped base material Si wafer or polycrystalline Si
- This substrate layer 10 is provided with a cap layer 12, which is an antireflection layer, such as a silicon nitride layer having a layer thickness of 50 to 100 nm.
- a metallic seed structure 26 is now produced by the cover layer 12 directly on the surface of the substrate layer 10.
- a carrier material 14 in the form of a thin glass layer or a thin film is arranged, which is provided on its side facing the substrate layer 10 with a thin metal layer 16. This may be, for example, a nickel layer.
- a pulsed laser 18 is used, which by a lens 20 and a Gap 22 through a laser beam 24 through the transparent support layer 14 directed to the metal layer 16. Due to the high energy of the pulsed laser beam, the metal layer 16 is locally peeled off and evaporated through the cover layer 12 to precipitate on the surface of the substrate layer 10 as a seed structure 26 as shown in FIG. 3c).
- This layer is referred to here as a "seed structure", since it is usually reinforced by an additional process step, for example a galvanic step.
- the seed structure 26 can also be produced through several layers, provided that the energy is metered in a suitable manner.
- a pulsed laser is used for the LIFT process, which is operated with a pulse duration of about 40 nanoseconds. It may, for example, be a Nd: YAG laser with a wavelength of 532 or 1064 nm. Basically, the LIFT process is largely wavelength independent. However, depending on the metal to be transferred and the particular absorption, a specific wavelength may also be preferred.
- the seed structure produced according to FIGS. 3 a), b) and c) is subsequently reinforced according to FIG. 4, as is indicated schematically in FIG. 4 b).
- a galvanic process or an electroless process can be used.
- the result is a reinforcing structure 28 with a high conductivity. This may consist of the same material or of a different material as the seed structure 26.
- the laser beam may be appropriately controlled by a scanner to produce a desired seed structure on a substrate surface 10.
- a substrate surface 10. 1 shows a current / voltage characteristic of a solar cell with a nickel contact on the front, which was produced by a LIFT process.
- the seed structure was applied directly through the antireflection coating on the wafer (n-doped Si emitter) and then galvanically reinforced.
- the characteristic curve shows that the contact thus produced on the front side of the solar cell leads to a high-quality solar cell.
- FIG. 2 shows the dependence of the contact resistance on the travel speed. Higher travel speeds result in lower contact resistance.
- the best contact resistance achieved is 3 x 10 -5 ohm cm 2 at an emitter with a sheet resistance of 55 ohms per square at a nickel layer thickness of 250 nm on glass.
- n-type material is preferably contacted with Ag, Ti or Ni.
- p-type material is preferably contacted with another metal, for example with aluminum.
- the respective materials can be selected depending on the particular layer to be contacted and applied in the LIFT process. In the subsequent amplification step, it is possible to work with the same or different materials. Thus, for example, first a nickel layer can be applied as a diffusion barrier layer in the LIFT process, which is then first galvanically reinforced and then a copper layer is likewise applied by electroplating.
- the laser used has an elliptical focus with a width of about 5 microns and a length of about 20 to 30 microns.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012508924A JP2012526372A (ja) | 2009-05-05 | 2010-04-17 | 半導体基板のコンタクト形成方法 |
CN2010800196854A CN102422430A (zh) | 2009-05-05 | 2010-04-17 | 在半导体衬底上生成接触的方法 |
US13/283,947 US20120080088A1 (en) | 2009-05-05 | 2011-10-28 | Method of Contacting a Semiconductor Substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009020774.0 | 2009-05-05 | ||
DE102009020774A DE102009020774B4 (de) | 2009-05-05 | 2009-05-05 | Verfahren zum Kontaktieren eines Halbleitersubstrates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/283,947 Continuation US20120080088A1 (en) | 2009-05-05 | 2011-10-28 | Method of Contacting a Semiconductor Substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010127764A2 true WO2010127764A2 (de) | 2010-11-11 |
WO2010127764A3 WO2010127764A3 (de) | 2011-04-21 |
Family
ID=42932535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2010/002364 WO2010127764A2 (de) | 2009-05-05 | 2010-04-17 | Verfahren zum kontaktieren eines halbleitersubstrates |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120080088A1 (de) |
JP (1) | JP2012526372A (de) |
KR (1) | KR20120023714A (de) |
CN (1) | CN102422430A (de) |
DE (1) | DE102009020774B4 (de) |
WO (1) | WO2010127764A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013124254A1 (de) * | 2012-02-23 | 2013-08-29 | Universitaet Stuttgart | Verfahren zum kontaktieren eines halbleitersubstrates, insbesondere zum kontaktieren von solarzellen, sowie dadurch kontaktierte solarzellen |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011075025A1 (de) * | 2011-04-29 | 2012-10-31 | Schmid Technology Gmbh | Verfahren und Vorrichtung zum Aufbringen von Drucksubstanz |
DE102011077450A1 (de) * | 2011-06-14 | 2012-12-20 | Robert Bosch Gmbh | Verfahren und Anordnung zur Herstellung einer kristallinen Solarzelle |
DE102011077462A1 (de) * | 2011-06-14 | 2012-12-20 | Robert Bosch Gmbh | Verfahren, Anordnung und Prozesshilfsmittel zur Herstellung einer kristallinen Solarzelle |
WO2015056253A1 (en) | 2013-10-14 | 2015-04-23 | Orbotech Ltd. | Lift printing of multi-composition material structures |
US10252507B2 (en) * | 2013-11-19 | 2019-04-09 | Rofin-Sinar Technologies Llc | Method and apparatus for forward deposition of material onto a substrate using burst ultrafast laser pulse energy |
CN111703212B (zh) | 2014-08-07 | 2022-11-18 | 奥宝科技有限公司 | Lift印刷系统 |
EP4380323A2 (de) | 2014-10-19 | 2024-06-05 | Orbotech Ltd. | Liftdruck von leitfähigen spuren auf ein halbleitersubstrat |
US10633758B2 (en) | 2015-01-19 | 2020-04-28 | Orbotech Ltd. | Printing of three-dimensional metal structures with a sacrificial support |
CN107849687B (zh) * | 2015-07-09 | 2020-01-14 | 奥博泰克有限公司 | 对激光诱导正向转移喷射角度的控制 |
CN105081500B (zh) * | 2015-09-02 | 2017-02-22 | 哈尔滨工业大学 | 一种使用激光前向转印具有特定晶粒取向和数量薄膜诱发金属间化合物生长的方法 |
IL258026B2 (en) | 2015-11-22 | 2023-03-01 | Orbotech Ltd | Control of surface properties in 3D printed structures |
DE102016118383A1 (de) * | 2016-09-28 | 2018-03-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Bearbeitung eines Halbleiterbauelementes mit zumindest einer Halbleiterschicht |
CA3043791A1 (en) * | 2016-11-23 | 2018-05-31 | Institut National De La Recherche Scientifique | Method and system of laser-driven impact acceleration |
TW201901887A (zh) | 2017-05-24 | 2019-01-01 | 以色列商奧寶科技股份有限公司 | 於未事先圖樣化基板上電器互連電路元件 |
DE102018005010A1 (de) * | 2017-07-13 | 2019-01-17 | Wika Alexander Wiegand Se & Co. Kg | Transfer und Aufschmelzen von Schichten |
DE102018202513B4 (de) * | 2018-02-20 | 2023-08-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Verfahren zur Metallisierung eines Bauelements |
KR102214451B1 (ko) * | 2019-03-15 | 2021-02-09 | 한국과학기술연구원 | 펄스레이저를 이용한 태양 전지 셀의 국부 후면 전계 영역 형성 방법과 이에 따라 형성된 후면 전계 영역을 포함하는 태양 전지 셀 |
KR20210049250A (ko) * | 2019-10-24 | 2021-05-06 | 삼성디스플레이 주식회사 | 기판 가공 장치 및 기판 가공 방법 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752455A (en) * | 1986-05-27 | 1988-06-21 | Kms Fusion, Inc. | Pulsed laser microfabrication |
DE4220158A1 (de) * | 1992-06-19 | 1993-12-23 | Battelle Institut E V | Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase |
DE4232373A1 (de) * | 1992-09-03 | 1994-03-10 | Deutsche Forsch Luft Raumfahrt | Verfahren zum Auftragen strukturierter Schichten |
DE4330961C1 (de) * | 1993-09-09 | 1994-07-28 | Krone Ag | Verfahren zur Herstellung von strukturierten Metallisierungen auf Oberflächen |
WO1999044402A1 (en) * | 1998-02-25 | 1999-09-02 | Moore, Royston | A deposition method and apparatus therefor |
US6159832A (en) * | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
US20070169806A1 (en) * | 2006-01-20 | 2007-07-26 | Palo Alto Research Center Incorporated | Solar cell production using non-contact patterning and direct-write metallization |
WO2008080893A1 (de) * | 2007-01-05 | 2008-07-10 | Basf Se | Verfahren zur herstellung von elektrisch leitfähigen oberflächen |
DE102008057228A1 (de) * | 2008-01-17 | 2009-07-23 | Schmid Technology Gmbh | Verfahren und Vorrichtung zur Herstellung einer Solarzelle |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970196A (en) | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
DE19915666A1 (de) | 1999-04-07 | 2000-10-19 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen |
DE10046170A1 (de) | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
DE102006030822A1 (de) | 2006-06-30 | 2008-01-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer metallischen Kontaktstruktur einer Solarzelle |
DE102006040352B3 (de) | 2006-08-29 | 2007-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens |
US7666567B2 (en) * | 2007-10-23 | 2010-02-23 | E. I. Du Pont De Nemours And Company | Negative imaging method for providing a patterned metal layer having high conductivity |
-
2009
- 2009-05-05 DE DE102009020774A patent/DE102009020774B4/de not_active Expired - Fee Related
-
2010
- 2010-04-17 WO PCT/EP2010/002364 patent/WO2010127764A2/de active Application Filing
- 2010-04-17 JP JP2012508924A patent/JP2012526372A/ja not_active Withdrawn
- 2010-04-17 CN CN2010800196854A patent/CN102422430A/zh active Pending
- 2010-04-17 KR KR1020117028351A patent/KR20120023714A/ko not_active Application Discontinuation
-
2011
- 2011-10-28 US US13/283,947 patent/US20120080088A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752455A (en) * | 1986-05-27 | 1988-06-21 | Kms Fusion, Inc. | Pulsed laser microfabrication |
DE4220158A1 (de) * | 1992-06-19 | 1993-12-23 | Battelle Institut E V | Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase |
DE4232373A1 (de) * | 1992-09-03 | 1994-03-10 | Deutsche Forsch Luft Raumfahrt | Verfahren zum Auftragen strukturierter Schichten |
DE4330961C1 (de) * | 1993-09-09 | 1994-07-28 | Krone Ag | Verfahren zur Herstellung von strukturierten Metallisierungen auf Oberflächen |
WO1999044402A1 (en) * | 1998-02-25 | 1999-09-02 | Moore, Royston | A deposition method and apparatus therefor |
US6159832A (en) * | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
US20070169806A1 (en) * | 2006-01-20 | 2007-07-26 | Palo Alto Research Center Incorporated | Solar cell production using non-contact patterning and direct-write metallization |
WO2008080893A1 (de) * | 2007-01-05 | 2008-07-10 | Basf Se | Verfahren zur herstellung von elektrisch leitfähigen oberflächen |
DE102008057228A1 (de) * | 2008-01-17 | 2009-07-23 | Schmid Technology Gmbh | Verfahren und Vorrichtung zur Herstellung einer Solarzelle |
Non-Patent Citations (2)
Title |
---|
CHEN K T ET AL: "Laser-induced implantation of silver particles into poly(vinyl alcohol) films and its application to electronic-circuit fabrication on encapsulated organic electronics", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, Bd. 87, Nr. 4, 1. April 2010 (2010-04-01), Seiten 543-547, XP026880482, ISSN: 0167-9317, DOI: DOI:10.1016/J.MEE.2009.08.008 [gefunden am 2009-08-14] * |
PIQUE A ET AL: "Embedding electronic circuits by laser direct-write", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, Bd. 83, Nr. 11-12, 1. November 2006 (2006-11-01), Seiten 2527-2533, XP024954828, ISSN: 0167-9317, DOI: DOI:10.1016/J.MEE.2006.06.004 [gefunden am 2006-11-01] * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013124254A1 (de) * | 2012-02-23 | 2013-08-29 | Universitaet Stuttgart | Verfahren zum kontaktieren eines halbleitersubstrates, insbesondere zum kontaktieren von solarzellen, sowie dadurch kontaktierte solarzellen |
CN104137270A (zh) * | 2012-02-23 | 2014-11-05 | 斯图加特大学 | 用于接触半导体衬底、特别是用于接触太阳能电池的方法以及由此得到接触的太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
CN102422430A (zh) | 2012-04-18 |
US20120080088A1 (en) | 2012-04-05 |
WO2010127764A3 (de) | 2011-04-21 |
JP2012526372A (ja) | 2012-10-25 |
DE102009020774B4 (de) | 2011-01-05 |
DE102009020774A1 (de) | 2010-11-11 |
KR20120023714A (ko) | 2012-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102009020774B4 (de) | Verfahren zum Kontaktieren eines Halbleitersubstrates | |
EP2193867B2 (de) | Verfahren zur Herstellung einer Drahtelektrode zum funkenerosiven Schneiden. | |
DE102012003866B4 (de) | Verfahren zum Kontaktieren eines Halbleitersubstrates, insbesondere zum Kontaktieren von Solarzellen, sowie Solarzellen | |
DE102015100665A1 (de) | Verfahren zum Erzeugen einer Kupferschicht auf einem Halbleiterkörper unter Verwendung eines Druckprozesses | |
EP1987543A1 (de) | Verfahren zum herstellen einer metallischen kontaktstruktur einer solarzelle | |
EP3592696B1 (de) | Anordnung und verfahren zum bereitstellen einer vielzahl von nanodrähten | |
DE102011016335B4 (de) | Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle | |
WO2009006988A1 (de) | Kontakt-struktur für euin halbleiter-bauelement sowie verfahren zur herstellung desselben | |
DE102009010816B4 (de) | Verfahren zur Herstellung eines Halbleiter-Bauelements | |
WO2009021713A1 (de) | Verfahren zur herstellung eines halbleiter-bauelements, halbleiter-bauelement sowie zwischenprodukt bei der herstellung desselben | |
DE102018202513A1 (de) | Verfahren zur Metallisierung eines Bauelements | |
WO2014023668A1 (de) | Laserbasiertes verfahren und bearbeitungstisch zur lokalen kontaktierung eines halbleiterbauelements | |
DE102013220886A1 (de) | Verfahren zum Erzeugen einer metallischen Kontaktierungsstruktur auf einem Halbleitersubstrat | |
WO2013064267A1 (de) | Verfahren und vorrichtung zur erzeugung einer lasergestützten elektrisch leitfähigen kontaktierung einer objektoberfläche | |
DE102009053416B4 (de) | Verfahren zur Herstellung und Verschaltung von Solarzellenanordnungen und Solarzellenanordnung | |
WO2005088730A2 (de) | Verfahren zum ausbilden einer struktur | |
EP2073268A2 (de) | Verfahren und Vorrichtung zur Herstellung eines semitransparenten photovoltaischen Moduls | |
DE102006030822A1 (de) | Verfahren zum Herstellen einer metallischen Kontaktstruktur einer Solarzelle | |
EP3513425B1 (de) | Verfahren zur herstellung einer kristallinen siliziumschicht und siliziumbasiertes halbleiterbauelement | |
DE102008029107B4 (de) | Verfahren zur Herstellung einer Metallstruktur auf einer Oberfläche eines Halbleitersubstrates | |
DE102011102270A1 (de) | Verfahren und Vorrichtung zur Ablation von Schichten von Halbleitersubstraten, sowie zur Nachbehandlung | |
EP2465145A2 (de) | Verfahren zur herstellung einer emitter-elektrode für eine kristalline siliziumsolarzelle und entsprechende siliziumsolarzelle | |
WO2014001006A1 (de) | Verfahren zum ausbilden einer elektrisch leitenden struktur an einem trägerelement, schichtanordnung sowie verwendung eines verfahrens oder einer schichtanordnung | |
DE102009061071B3 (de) | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements | |
DE102019201348A1 (de) | Metallisierte Mikrostrukturen in Glasträgern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080019685.4 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10713862 Country of ref document: EP Kind code of ref document: A2 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012508924 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2322/MUMNP/2011 Country of ref document: IN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20117028351 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10713862 Country of ref document: EP Kind code of ref document: A2 |