JP6447926B2 - 太陽電池および太陽電池の製造方法 - Google Patents
太陽電池および太陽電池の製造方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 106
- 239000010703 silicon Substances 0.000 claims description 106
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 63
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 53
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 51
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
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- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
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Description
[項目1]
太陽電池であって、
基板と、
前記基板の上方に配置されたエミッタ領域と、
前記エミッタ領域上に配置され、かつ前記エミッタ領域と接触している、導電性層を含む、導電性コンタクトであって、前記導電性層は、接着層部分と混合された金属ペースト部分を含む、導電性コンタクトとを含む、太陽電池。
[項目2]
前記接着層部分は、底部抗反射コーティング(BARC)部分を含む、項目1に記載の太陽電池。
[項目3]
前記接着層部分は、パッシベーション層部分を更に含む、項目2に記載の太陽電池。
[項目4]
前記BARC部分が非晶質シリコンを含み、前記パッシベーション層部分が窒化ケイ素を含む、項目3に記載の太陽電池。
[項目5]
前記接着層部分は、非晶質シリコン(a−Si)、ドープしたシリコン、シリコンリッチ窒化ケイ素、二酸化ケイ素(SiO 2 )、及び酸窒化ケイ素(SiON)からなる群から選択される材料を含む、項目1に記載の太陽電池。
[項目6]
前記金属ペースト部分は、アルミニウム(Al)を含み、前記接着層部分はシリコン(Si)を含み、前記導電性層はAl−Si合金を含む、項目1に記載の太陽電池。
[項目7]
前記接着層部分は、ポリマー接着剤を更に含む、項目1に記載の太陽電池。
[項目8]
前記エミッタ領域はN型エミッタ領域であり、前記接着層部分はP型シリコンを含む、項目1に記載の太陽電池。
[項目9]
前記導電性層は、およそ2〜10マイクロメートルの厚さを有し、前記導電性コンタクトは、前記導電性層、前記導電性層上に配置された無電解めっきニッケル(Ni)層、及び前記Ni層上に配置された電気めっき銅(Cu)層を含む前記太陽電池のバックコンタクトである、項目1に記載の太陽電池。
[項目10]
太陽電池であって、
基板表面、又はその付近に拡散領域を有する基板と、
前記拡散領域の上方に配置され、かつ前記拡散領域と接触している導電性層を含む、導電性コンタクトであって、前記導電性層は、接着層部分と混合された金属ペースト部分を含む、導電性コンタクトとを含む、太陽電池。
[項目11]
前記接着層部分は、底部抗反射コーティング(BARC)部分を含む、項目10に記載の太陽電池。
[項目12]
前記接着層部分は、パッシベーション層部分を更に含む、項目11に記載の太陽電池。
[項目13]
前記BARC部分が非晶質シリコンを含み、前記パッシベーション層部分が窒化ケイ素を含む、項目12に記載の太陽電池。
[項目14]
前記接着層部分は、非晶質シリコン(a−Si)、ドープしたシリコン、シリコンリッチ窒化ケイ素、二酸化ケイ素(SiO 2 )、及び酸窒化ケイ素(SiON)からなる群から選択される材料を含む、項目10に記載の太陽電池。
[項目15]
前記金属ペースト部分は、アルミニウム(Al)を含み、前記接着層部分はシリコン(Si)を含み、前記導電性層はAl−Si合金を含む、項目10に記載の太陽電池。
[項目16]
前記接着層部分は、ポリマー接着剤を含む、項目10に記載の太陽電池。
[項目17]
前記拡散領域はN型拡散領域であり、前記接着層部分はP型シリコンを含む、項目10に記載の太陽電池。
[項目18]
前記導電性層は、およそ2〜10マイクロメートルの厚さを有し、前記導電性コンタクトは、前記導電性層、前記導電性層上に配置された無電解めっきニッケル(Ni)層、及び前記Ni層上に配置された電気めっき銅(Cu)層を含む前記太陽電池のバックコンタクトである、項目10に記載の太陽電池。
[項目19]
太陽電池の製造方法であって、前記方法は、
基板のエミッタ領域の上方に接着層を形成する段階と、
金属シードペースト層を、前記接着層上に形成する段階と、
前記基板の前記エミッタ領域と接触する導電性層を形成するために前記金属シードペースト層及び前記接着層をアニールする段階と、
前記太陽電池の導電性コンタクトを前記導電性層から形成する段階とを含む、方法。
[項目20]
前記金属シードペースト層及び前記接着層をアニールする段階は、前記導電性層を形成するために、前記金属シードペースト層及び前記接着層を混合する段階を含む、項目19に記載の方法。
Claims (14)
- 太陽電池であって、
基板と、
前記基板の上方に配置されたN型ドープポリシリコン領域と、
前記基板の上方に配置されたP型ドープポリシリコン領域と、
P型シリコンと金属ペースト部分との混合物を含む複数の導電性コンタクトと
を備え、
前記複数の導電性コンタクトは、前記N型ドープポリシリコン領域上に配置され、前記N型ドープポリシリコン領域と電気的に接続された一の前記導電性コンタクトと、前記P型ドープポリシリコン領域上に配置され、前記P型ドープポリシリコン領域と電気的に接続された他の前記導電性コンタクトとを含む、太陽電池。 - 前記N型ドープポリシリコン領域の上方および前記P型ドープポリシリコン領域の上方に配置された絶縁層をさらに備え、
前記一の導電性コンタクトは、前記N型ドープポリシリコン領域の上方において、前記絶縁層に設けられたコンタクト開口を介して、前記N型ドープポリシリコン領域と電気的に接続され、
前記他の導電性コンタクトは、前記P型ドープポリシリコン領域の上方において、前記絶縁層に設けられたコンタクト開口を介して、前記P型ドープポリシリコン領域と電気的に接続されている
請求項1に記載の太陽電池。 - 前記基板の上面において、前記N型ドープポリシリコン領域および前記P型ドープポリシリコン領域が交互に配列される、
請求項1または2に記載の太陽電池。 - 前記金属ペースト部分は、アルミニウム(Al)を含む、請求項1から3のいずれか一項に記載の太陽電池。
- 前記混合物はAl−Si合金を含む請求項4に記載の太陽電池。
- 前記アルミニウム(Al)に、カルシウム(Ca)、セリウム(Ce)またはマグネシウム(Mg)の少なくとも一つが追加される、請求項4または5に記載の太陽電池。
- 前記P型シリコンは、底部抗反射コーティング部分(BARC部分)から形成された、請求項1から3のいずれか一項に記載の太陽電池。
- 前記BARC部分が非晶質シリコンを含む、請求項7に記載の太陽電池。
- 前記P型シリコンは、非晶質シリコン(a−Si)、ドープしたシリコン、シリコンリッチ窒化ケイ素からなる群から選択される材料を含む、請求項1から3のいずれか一項に記載の太陽電池。
- 前記混合物は、2〜10マイクロメートルの厚さを有し、前記導電性コンタクトは、前記混合物、前記混合物上に配置された無電解めっきニッケル層(Ni層)、及び前記Ni層上に配置された電気めっき銅(Cu)層を含む前記太陽電池のバックコンタクトである、請求項1から3のいずれか一項に記載の太陽電池。
- 太陽電池の製造方法であって、前記製造方法は、
基板のN型ドープポリシリコン領域およびP型ドープポリシリコン領域の上方に、P型シリコンを形成する段階と、
前記P型シリコン上に、金属ペースト部分を形成する段階と、
前記金属ペースト部分および前記P型シリコンをアニールし、前記N型ドープポリシリコン領域と接触する混合層および前記P型ドープポリシリコン領域と接触する混合層を形成する段階と、を含む、
方法。 - 前記金属ペースト部分を形成する段階は、アルミニウム(Al)を含む金属ペースト部分を形成する段階であり、
前記N型ドープポリシリコン領域と接触する混合層および前記P型ドープポリシリコン領域と接触する混合層は、Al−Si合金を含む、
請求項11に記載の方法。 - 前記金属ペースト部分を形成する段階は、カルシウム(Ca)、セリウム(Ce)またはマグネシウム(Mg)の少なくとも一つを追加した前記アルミニウム(Al)を含む金属ペースト部分を形成する段階である、
請求項12に記載の方法。 - 前記混合層は、2〜10マイクロメートルの長さを有し、
前記金属ペースト部分および前記P型シリコンをアニールし、前記N型ドープポリシリコン領域と接触する混合層および前記P型ドープポリシリコン領域と接触する混合層を形成する段階は、前記混合層、前記混合層上に形成された無電解めっきニッケル層(Ni層)、及び前記Ni層上に配置された電気めっき銅層(Cu層)を含む、前記太陽電池のバックコンタクトを形成する段階である、
請求項11から13のいずれか一項に記載の方法。
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