SG11201507008UA - Conductivity enhancement of solar cells - Google Patents
Conductivity enhancement of solar cellsInfo
- Publication number
- SG11201507008UA SG11201507008UA SG11201507008UA SG11201507008UA SG11201507008UA SG 11201507008U A SG11201507008U A SG 11201507008UA SG 11201507008U A SG11201507008U A SG 11201507008UA SG 11201507008U A SG11201507008U A SG 11201507008UA SG 11201507008U A SG11201507008U A SG 11201507008UA
- Authority
- SG
- Singapore
- Prior art keywords
- solar cells
- conductivity enhancement
- enhancement
- conductivity
- solar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361800188P | 2013-03-15 | 2013-03-15 | |
| PCT/US2014/029644 WO2014145009A1 (en) | 2013-03-15 | 2014-03-14 | Conductivity enhancement of solar cells |
| US14/211,353 US10074753B2 (en) | 2013-03-15 | 2014-03-14 | Conductivity enhancement of solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201507008UA true SG11201507008UA (en) | 2015-10-29 |
Family
ID=51521942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201507008UA SG11201507008UA (en) | 2013-03-15 | 2014-03-14 | Conductivity enhancement of solar cells |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US10074753B2 (en) |
| EP (1) | EP2973734A4 (en) |
| JP (1) | JP6378748B2 (en) |
| KR (1) | KR102242269B1 (en) |
| CN (1) | CN105144398B (en) |
| AU (1) | AU2014233487B2 (en) |
| MX (1) | MX349018B (en) |
| MY (1) | MY175806A (en) |
| SG (1) | SG11201507008UA (en) |
| TW (1) | TWI675491B (en) |
| WO (1) | WO2014145009A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9293624B2 (en) * | 2012-12-10 | 2016-03-22 | Sunpower Corporation | Methods for electroless plating of a solar cell metallization layer |
| WO2016072415A1 (en) * | 2014-11-07 | 2016-05-12 | シャープ株式会社 | Photoelectric conversion element |
| US9520507B2 (en) * | 2014-12-22 | 2016-12-13 | Sunpower Corporation | Solar cells with improved lifetime, passivation and/or efficiency |
| JP6689757B2 (en) * | 2015-01-16 | 2020-04-28 | シャープ株式会社 | Photoelectric conversion element, solar cell module including the same, and photovoltaic power generation system |
| JP6701170B2 (en) | 2015-03-13 | 2020-05-27 | シャープ株式会社 | Photoelectric conversion element and photoelectric conversion module |
| US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
| CN106252423B (en) * | 2016-08-15 | 2017-12-29 | 国网山西省电力公司大同供电公司 | A kind of novel photovoltaic battery and preparation method thereof |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5426675A (en) | 1977-07-29 | 1979-02-28 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
| JPS5929474A (en) * | 1982-08-11 | 1984-02-16 | Toshiba Corp | Solar battery |
| JPS60140882A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Paste material for manufacture of semiconductor |
| US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
| US5468652A (en) | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
| EP1182709A1 (en) | 2000-08-14 | 2002-02-27 | IPU, Instituttet For Produktudvikling | A process for depositing metal contacts on a buried grid solar cell and a solar cell obtained by the process |
| US7339110B1 (en) | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US7468485B1 (en) | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US20070148336A1 (en) | 2005-11-07 | 2007-06-28 | Robert Bachrach | Photovoltaic contact and wiring formation |
| GB2442254A (en) | 2006-09-29 | 2008-04-02 | Renewable Energy Corp Asa | Back contacted solar cell |
| US7704352B2 (en) | 2006-12-01 | 2010-04-27 | Applied Materials, Inc. | High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate |
| US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
| JP2009135338A (en) * | 2007-11-30 | 2009-06-18 | Sanyo Electric Co Ltd | Solar cell, and manufacturing method of solar cell |
| US7833808B2 (en) * | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
| JP2009290105A (en) | 2008-05-30 | 2009-12-10 | Sharp Corp | Solar battery, method of manufacturing solar battery, and solar battery module |
| US9150966B2 (en) * | 2008-11-14 | 2015-10-06 | Palo Alto Research Center Incorporated | Solar cell metallization using inline electroless plating |
| JP5449849B2 (en) * | 2009-04-30 | 2014-03-19 | シャープ株式会社 | Solar cell and method for manufacturing the same |
| US8779280B2 (en) * | 2009-08-18 | 2014-07-15 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| JP4678698B2 (en) * | 2009-09-15 | 2011-04-27 | シャープ株式会社 | Solar cell module and manufacturing method thereof |
| CN101764180A (en) | 2009-12-31 | 2010-06-30 | 中山大学 | Method for manufacturing local front-surface field N-type solar cell |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| US20110195542A1 (en) | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Method of providing solar cell electrode by electroless plating and an activator used therein |
| KR20120026813A (en) * | 2010-09-10 | 2012-03-20 | 삼성전기주식회사 | Method for forming electrode structure and method for manufaturing the solar cell battery with the same, and solar cell battery manufactured by the method for manufaturing the solar cell battery |
| JP5349523B2 (en) * | 2011-03-31 | 2013-11-20 | 三菱電機株式会社 | Manufacturing method of solar cell |
| KR101198870B1 (en) * | 2011-11-07 | 2012-11-07 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| US9263601B2 (en) * | 2012-12-21 | 2016-02-16 | Sunpower Corporation | Enhanced adhesion of seed layer for solar cell conductive contact |
-
2014
- 2014-03-14 JP JP2016503178A patent/JP6378748B2/en active Active
- 2014-03-14 SG SG11201507008UA patent/SG11201507008UA/en unknown
- 2014-03-14 KR KR1020157028797A patent/KR102242269B1/en active IP Right Grant
- 2014-03-14 WO PCT/US2014/029644 patent/WO2014145009A1/en active Application Filing
- 2014-03-14 EP EP14763695.5A patent/EP2973734A4/en not_active Withdrawn
- 2014-03-14 MX MX2015013100A patent/MX349018B/en active IP Right Grant
- 2014-03-14 AU AU2014233487A patent/AU2014233487B2/en active Active
- 2014-03-14 CN CN201480015814.0A patent/CN105144398B/en active Active
- 2014-03-14 MY MYPI2015002303A patent/MY175806A/en unknown
- 2014-03-14 US US14/211,353 patent/US10074753B2/en active Active
- 2014-03-17 TW TW103110008A patent/TWI675491B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014145009A1 (en) | 2014-09-18 |
| TWI675491B (en) | 2019-10-21 |
| MX2015013100A (en) | 2016-01-22 |
| JP6378748B2 (en) | 2018-08-22 |
| CN105144398A (en) | 2015-12-09 |
| EP2973734A1 (en) | 2016-01-20 |
| MX349018B (en) | 2017-07-07 |
| MY175806A (en) | 2020-07-09 |
| AU2014233487B2 (en) | 2018-08-09 |
| US20140261671A1 (en) | 2014-09-18 |
| TW201448236A (en) | 2014-12-16 |
| CN105144398B (en) | 2019-04-12 |
| KR102242269B1 (en) | 2021-04-19 |
| AU2014233487A1 (en) | 2015-09-17 |
| JP2016514901A (en) | 2016-05-23 |
| EP2973734A4 (en) | 2016-04-13 |
| KR20150132322A (en) | 2015-11-25 |
| US10074753B2 (en) | 2018-09-11 |
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