CN102422414A - 器件安装构造以及器件安装方法 - Google Patents

器件安装构造以及器件安装方法 Download PDF

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Publication number
CN102422414A
CN102422414A CN2010800181736A CN201080018173A CN102422414A CN 102422414 A CN102422414 A CN 102422414A CN 2010800181736 A CN2010800181736 A CN 2010800181736A CN 201080018173 A CN201080018173 A CN 201080018173A CN 102422414 A CN102422414 A CN 102422414A
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China
Prior art keywords
interarea
substrate
electrode
conducting portion
electrodes
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CN2010800181736A
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English (en)
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山本敏
桥本广和
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Fujikura Ltd
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Fujikura Ltd
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

一种器件安装构造,其具备:贯通布线基板,其具有基板和在贯通该基板的多个贯通孔的内部形成的多个贯通布线;第1器件,其具有多个电极,并且这些电极按照与所述第1主面相对的方式配置;和第2器件,其具有配置与该第1器件的各电极的配置不同的多个电极,并且这些电极按照与所述第2主面相对的方式配置;其中,所述各贯通布线具有第1导通部和第2导通部,该第1导通部被设置在所述第1主面的与所述第1器件的电极对应的位置,该第2导通部被设置在所述第2主面的与所述第2器件的电极对应的位置,所述第1器件的各电极与所述第1导通部电连接,所述第2器件的各电极与所述第2导通部电连接。

Description

器件安装构造以及器件安装方法
技术领域
本发明涉及用于在具有贯通了基板的贯通布线的贯通布线基板的两面安装器件的器件安装构造以及器件安装方法。
本申请基于在2009年4月28日向日本国申请的特愿2009-109926号主张优先权,并在此援引其内容。
背景技术
以往,作为电连接在基板的两面分别安装的器件彼此的方法经常使用设置贯通了基板的贯通布线的方法。
作为具有贯通布线的基板的一例,在专利文献1中,记载有具备贯通布线的贯通布线基板,该贯通布线是向具有在与基材的厚度方向不同的方向延伸的部分的微细孔填充导电性物质而构成的。
专利文献1:日本国特开2006-303360号公报
发明内容
在基板的两面安装的器件的种类相互不同的情况下,每个器件所需要的电极的配置不同。因此,会需要消除该差异用的表面布线。另外,为了避免布线彼此短路或者在布线中流动的电信号发生干扰,需要在布线间设置一定的间隔(空间)。但是,在基板的主面上设置上述那样的表面布线的情况下,主面中的表面布线的占有面积增大,其结果,存在基板上的器件配置严格地被制约的问题。另外,若布线长度长,则还存在会发生信号延迟或者高频率特性劣化的情况等问题。
另外,在各器件与基板对置的面上具有的电极数较多的情况下,仅通过上述那样的表面布线是不能应对的。该情况下,需要将布线层设置为多层,形成通过层间过孔来连接各层的多层布线构造。因此,会产生由于设置成多层布线而引起的布线长度增大以及与此相伴的高频率特性劣化等问题,另外,基板制作工艺也会变得繁杂。
本发明是鉴于上述事情而提出的,其目的在于提供一种能够对以高密度且不同布局配置了电极的器件,不采用多层布线构造而将在贯通布线基板的两面安装的器件的电极彼此自由地连接的器件安装构造以及器件安装方法。
为了解决所述课题,本发明采用以下构造。即,本发明的第一方式的器件安装构造具备:贯通布线基板,其具有基板和多个贯通布线,该多个贯通布线形成在从作为该基板的一方主面的第1主面向作为另一方主面的第2主面贯通所述基板的多个贯通孔的内部;第1器件,其具有多个电极,并且这些电极按照与所述第1主面对置的方式进行配置;和第2器件,其具有配置与该第1器件的各电极的配置不同的多个电极,并且这些电极按照与所述第2主面对置的方式进行配置,其中,所述各贯通布线具有第1导通部和第2导通部,该第1导通部被设置在所述第1主面的与所述第1器件的电极对应的位置,该第2导通部被设置在所述第2主面的与所述第2器件的电极对应的位置,所述第1器件的各电极与所述第1导通部电连接,所述第2器件的各电极与所述第2导通部电连接。
优选所述各贯通布线具有连接所述第1导通部与所述第2导通部之间的大致直线形状。
优选在所述基板的内部设置有流路。
另外,本发明的第二方式的器件安装方法具有:准备第1器件和第2器件的步骤,该第1器件具有多个电极,该第2器件具有配置与该第1器件的各电极的配置不同的多个电极;贯通孔形成步骤,按照在作为所述基板的一方主面的第1主面的与所述第1器件的各电极对应的位置和作为所述基板的另一方主面的第2主面的与所述第2器件的各电极对应的位置进行开口的方式,形成从所述第1主面向所述第2主面贯通所述基板的多个贯通孔;贯通布线形成步骤,通过在所述各贯通孔内填充导体或者进行成膜来形成具有在所述第1主面侧露出的第1导通部和在所述2主面侧露出的第2导通部的贯通布线;和安装步骤,其将所述第1器件按照与所述基板的所述第1主面对置的方式进行配置,并将该第1器件的各电极与对应的所述第1导通部接合,并且将所述第2器件按照与所述基板的所述第2主面对置的方式进行配置,并将该第2器件的各电极与对应的所述第2导通部接合。
优选在所述贯通孔形成步骤中,在所述基板的内部形成流路。
优选所述贯通孔形成步骤具有对所述基板中用于形成所述贯通孔的区域以及用于形成所述流路的区域进行改性的步骤和通过蚀刻除去所述被改性的区域的步骤。
发明效果
根据本发明,能够将在贯通布线基板的两面安装的器件的电极彼此不经由表面布线而电连接,因此即使是电极高密度地配置的小型器件也能够自由地连接。
附图说明
图1A是表示本发明的一方式例的器件安装构造的俯视图。
图1B是沿图1A的A-A线的剖面图。
图2A是在图1A以及1B所示的器件安装构造中所使用的贯通布线基板的俯视图。
图2B是沿着图2A的B-B线的剖面图。
图3是图2A以及2B所示的贯通布线基板的立体图。
图4A是表示该方式例的第1变形例的器件安装构造的俯视图。
图4B是沿图4A的C-C线的剖视图。
图5A是表示该方式例的第2变形例的器件安装构造的俯视图。
图5B是沿图5A的D-D线的剖视图。
图6A是表示该方式例的第3变形例的器件安装构造的俯视图。
图6B是沿图6A的E-E线的剖视图。
图7是示意地表示图6A以及6B所示的器件安装构造的左下4分之1的部分中的电极的连接关系的部分俯视图。
图8是表示在本发明的器件安装构造上设置了凸块的一例的剖面图。
图9是表示在本发明的器件安装构造上设置了铸模树脂层的一例的剖面图。
图10是表示在本发明的器件安装构造上设置了带空腔保护部件的一例的剖面图。
图11A是表示具有流路的贯通布线基板的第1例的俯视图。
图11B是沿图11A的I-I线的剖视图。
图11C是沿图11A的J-J线的剖视图。
图12A是表示具有流路的贯通布线基板的第2例的俯视图。
图12B是沿图12A的K-K线的剖视图。
图12C是沿图12A的L-L线的剖视图。
图13A是表示具有流路的贯通布线基板的第3例的俯视图。
图13B是沿图13A的M-M线的剖视图。
图13C是沿图13A的N-N线的剖视图。
图14A是具有流路的贯通布线基板的制造方法的最初的阶段所示的剖视图。
图14B是表示继图14A之后的阶段的剖视图。
图14C是表示继图14B之后的阶段的剖视图。
图14D是表示继图14C之后的阶段的剖视图。
图14E是表示继图14D之后的阶段的剖视图。
具体实施方式
以下,参照附图来说明本发明的优选的实施方式。
在图1A~3中表示了本发明的一方式例的器件安装构造。该器件安装构造具备:贯通布线基板19,其具有基板10和多个贯通布线16,该多个贯通布线16形成在从该基板10的一方主面(以下称作“第1主面”)11向另一方主面(以下称作“第2主面”)12贯通基板10的多个贯通孔13的内部;第1器件1,其具有多个电极3,并且这些电极3按照与第1主面11对置的方式进行配置;和第2器件2,其具有配置与第1器件1的各电极3的配置不同的多个电极4,并且这些电极4按照与第2主面对置的方式进行配置,其中,各贯通孔13具有在第1主面11的与第1器件1的电极3对应的位置设置的第1导通部114和在第2主面12的与第2器件2的电极4对应的位置设置的第2导通部115,第1器件1的各电极3与第1导通部114电连接,第2器件2的各电极4与第2导通部115电连接。
由此,第1器件1的多个电极3与第2器件2的多个电极4经由多个贯通布线16电连接,所以能够将这些电极3、4间以大致最短的距离连接。优选各贯通布线16具有连接第1导通部114与第2导通部115之间的大致直线形状。
在本发明中,器件的电极配置(布局)是表示在与该器件的贯通布线基板的主面对置的面内与贯通布线连接的电极的二维配置的意思。总之,仅使器件整体平行移动,将所有的电极的位置向相同的方向挪动相同的距离,该器件的电极配置不变化。在2个器件间,对应的2个电极间的距离、对应的3个电极间的角度等在至少1个位置相异的情况下,这2个器件的电极配置相互不同。例如,在2个器件的电极配置是仅电极间的间距不同的相似关系的情况下,这2个器件的电极配置也相互不同。另外,即使在2个器件的电极由具有完全相同的布局的多个模块构成的情况下,当这些模块的位置在2个器件间不同时,2个器件的电极配置相互不同。此外,在该电极配置中,未与贯通布线连接的电极即使有也被除外,仅考虑与贯通布线连接的电极。
若在两面上安装的器件的电极配置同样,则与基板的主面垂直地形成所有的贯通布线,或者若即使倾斜也在相同的方向上(平行地)形成所有的贯通布线,则能够经由这些贯通布线以一对一的对应关系连接两器件的电极彼此。但是,在本发明中,两器件的电极配置相互不同。因此,在相对于基板的主面垂直地形成所有的贯通布线,或者即使倾斜也相互平行地形成的情况下,至少一方的器件的电极与导通部的位置不一致,从而需要表面布线。对于本发明,为了省略用于器件间的连接的表面布线,使第1主面11上的第1导通部114(开口部14)的配置与第1器件1的电极配置一致,并且使第2主面12上的第2导通部115(第2开口部15)的配置与第2器件2的电极配置一致。由此,能够在贯通布线基板19上不设置表面布线而将器件1、2间连接。
在图1A~3所示的例子中,两器件1、2的电极配置是电极3、4在器件1、2的周缘部排列的外围配置。而且两器件1、2的尺寸(沿基板10的主面11、12的方向的长度、面积等)相互不同。贯通布线基板19的贯通布线16从尺寸小的器件1的电极3向尺寸大的器件2的电极4形成。总之,第1导电部114位于基板10的第1主面11的中心部,第2导电部115靠基板10的第2主面12的外周,贯通布线16呈大致放射状地延伸。
这样,在本方式例的贯通布线基板19中,设置有贯通布线16的贯通孔13都是非平行的。因此,如后所述,贯通孔13的形成方法采用了能够向任意的朝向形成贯通孔13的方法。
此外,贯通孔13的朝向不取决于从相对于基板10的主面11、12垂直的方向观察的俯视面,而是包括基板10的厚度方向三维地来理解。例如在图2A中,相对于基板10的中心朝向一致的贯通孔13彼此在俯视时朝向相同,但是如图3所示,从三维上来看从第1主面11侧向第2主面12侧的方向不同,相互是不平行的。
基板10的材料可以举出玻璃、塑料、陶瓷等绝缘体、硅(Si)等半导体。在半导体基板的情况下,优选在贯通孔13的内壁、主面11、12等上形成绝缘层。在绝缘性基板的情况下,不需要在贯通孔13的内壁上进一步形成绝缘层。
此外,在电子器件的基材与安装电子器件的基板间的线性膨胀系数差大的情况下,由于根据安装时的温度两者的伸展量差异较大,因此在电子器件的电极与连接该电极的基板上的导电部之间易产生位置偏离。其结果,存在两者间的高精度的连接难以实现,或者两者间的连接本身难以实现的情况。
与此相对,根据本发明能够使用硅、玻璃作为基板10的材料。因此,例如在基板10的两主面上安装使用了硅基材的电子器件1、2的情况下,能够减小上述的线性膨胀系数差。其结果,能够抑制电子器件1、2的电极与基板10上的导通部的位置偏离,能够位置精确地连接两者。
如上所述,贯通布线16是对具有在基板10的第1主面11的与第1器件1的电极3对置的位置开口后的第1开口部14和在基板10的第2主面12的与第2器件2的电极4对置的位置开口后的第2开口部15的贯通孔13中填充导体或者进行成膜来设置的。
对贯通孔(微细孔)13的形成,可以使用专利文献1所记载的石英玻璃的通过飞秒激光的改性和湿法蚀刻的方法、NC钻孔等机械手法。在使用飞秒激光进行改性时,则照射了激光的部分的构造发生变化,与未照射激光的部分相比对蚀刻液的耐性被降低,因此能够容易形成孔。另外,微细孔13的直径可以在开口部14、15间大致固定,或者也可以变化为呈锥形形状、台阶状等。另外,第1开口部14的内径与第2开口部15的内径即使不同也没问题。另外,在开口部14、15附近也能够形成孔径从基板10内部向主面11、12侧连续地或者分阶段地扩大的构造。
作为用于贯通布线16的导体,可以举出铜(Cu)、钨(W)等金属、金锡(Au-Sn)等合金、多晶硅等非金属导体。制作方法能够适当地使用镀敷法、溅射法、熔融金属填充法、CVD、超临界成膜法等。
此外,优选贯通布线16是通过向微细孔13内部完全地填充导体而形成的。对于本发明的器件安装构造,按照与贯通布线16的开口部14以及开口部15对置的方式分别配置器件的电极3以及电极4。因此,若贯通布线16是向微细孔13内部完全地填充导体而成的实心构造,则与仅在微细孔13的内壁形成导体层而成的中空构造的情况相比,不论机械上的还是电气上的连接的稳定性均增大,因此优选。
这时,作为向微细孔内部完全地填充导体的方法,能够采用上述的镀敷法、溅射法、熔融金属填充法、CVD、超临界成膜法等中的任意一种方法。另外,也可以将这些方法适当组合来使用。特别是在孔的长度较长,形状较复杂的情况下,利用CVD或者超临界成膜等通过能够成膜至孔的深部的方法形成导体薄膜即可。通过将该导体薄膜作为种子层或粘接层,接着利用镀敷法、熔融金属填充法能够高效地向微细孔内部完全填充导体。
作为器件1、2,可以举出存储器(存储元件)、逻辑器(逻辑元件)等集成电路(IC)、传感器等MEMS器件、发光元件、受光元件等光学器件。器件1、2只要电极配置不同,与功能相异还是功能相同无关。特别是,通过高密度地集成异种器件,能够实现3维系统级封装(SiP)。
在本方式例的情况下,如图1B所示,在第1主面11侧多个器件1被层叠在基板10上。这样根据本方式例能够实现更进一步的高密度化。
在贯通布线基板19的制造中,形成具有与各个器件1、2的电极配置对应的开口部14、15的贯通孔13(贯通孔形成步骤),通过向该贯通孔13内填充导体或者进行成膜,形成具有在第1主面11侧露出的第1导通部114和在所述第2主面12侧露出的第2导通部115的贯通布线16(贯通布线形成步骤),进而通过将第1器件1按照与基板10的第1主面11对置的方式来配置,并将其电极3与对应的第1导通部114接合,并且将第2器件2按照与基板10的第2主面12对置的方式来配置,并将其电极4与对应的第2导通部115接合,将两器件1、2安装在贯通布线基板19的两面上(安装步骤)。由此,第1器件1的多个电极3与第2器件2的多个电极4经由多个贯通布线16电连接。
在本方式例的情况下,各器件1、2的电极3、4与贯通布线16之间通过在贯通孔13的开口部14、15上设置的连接盘部17、18和在该连接盘部17、18上设置的作为导电性材料(焊料、导电性凸块等)的接合材料5、6来连接。在本发明中,也可以省略连接盘部17、18,接合材料5、6。例如,也可以利用直接焊料等将电极3、4与贯通布线16接合。
在图1A~3所示的器件安装构造中,器件1、2的电极配置是电极3、4在器件1、2的周缘部排列的外围配置。
另外,在图4A以及4B所示的本方式例的第1变形例的器件安装构造中,第1器件1的电极配置是电极3呈十字状地排列的配置,第2器件2的电极配置是电极4在器件2的周缘部排列的外围配置。
另外,在图5A以及5B所示的本方式例的第2变形例的器件安装构造中,第1器件1的电极配置是电极3沿周边部以及呈十字状排列的格子型配置,第2器件2的电极配置是电极4在器件2的周缘部排列的外围配置。
另外,在图6A以及6B所示的本方式例的第3变形例的器件安装构造中,第1器件1的电极配置是电极3纵横地排列的面阵列配置,第2器件2的电极配置是电极4在器件2的周缘部排列的外围配置。此外,在图7中示意地表示了图6A以及6B所示的器件安装构造的左下4分之1的部分的电极的连接关系。
这里,符号A1~A9表示与第1器件1的电极3连接的第1主面11上的连接盘部17。另外,符号B1~B9表示与第2器件2的电极4连接的第2主面12上的连接盘部18。另外,符号C1~C9表示分别将A1~A9与B1~B9连接的贯通布线16。
另外,本发明不限于以上的例示,也可以组合其他的电极配置。
在图1A~图7所示的例子中,为了便于说明,第2器件2的在俯视时的尺寸比第1器件1大。另外,第2器件2的电极4配置在外围。但是,在本发明中,如以上的例子那样,第2器件2的电极4也可以配置在相对于基板10在俯视时与第1器件1重叠的位置上。另外,第1器件1的在俯视时的尺寸也可以与第2器件2同样。
这样,两器件1、2的电极3、4不论在各个器件1、2上形成怎样的电极配置(布局)也能够以大致最短的距离连接电极3、4之间,因此有利于器件的高速化。另外,能够不必像堆积基板那样进行多层化,而在贯通布线基板19、19A、19B、19C的内部变换布线间的间距,因此能够高效率地连接两器件1、2的电极3、4之间。
如图8所示,对于本发明的器件安装构造,能够设置由焊料等构成的凸块21。在图8所示的例子中,贯通布线基板19在基板10的第2主面12侧具有焊料凸块等连接端子21。经由贯通布线16、电路20,能够将器件1、2与印刷电路基板等外部基板(未图示)电连接。另外,在第1主面11侧层叠有器件1。
另外,对于本发明的器件安装构造,能够如图9所示通过铸模树脂层22被覆器件1或者如图10所示通过带空腔保护部件23覆盖器件1。由此,能够保护器件1。
另外,在本发明的器件安装构造中,如图11A~13C所示,能够在基板10的内部设置流路31。流路31作为使例如水等冷却用流体流通的流路使用。此外,流路31也能够作为使DNA(核酸)、蛋白质、脂质等生物溶液流通的流路使用。
在将流路31作为使冷却用流体流通的流路使用的情况下,通过在图11A~13C所示的带流路的贯通布线基板30、30A、30B的第1主面11侧安装第1器件,在第2主面12侧第2器件,能够冷却带流路的贯通布线基板30、30A、30B。由此,即使在第1器件以及/或者第2器件的电极高密度地配置的情况下,也能够有效地降低带流路的贯通布线基板30、30A、30B的温度上升。以下,对将流路31作为使冷却用流体流通的流路使用的情况进行说明。
流路31在其两端具有流入流出冷却用流体的出入口32、33。
如图11A~11C所示,也可以配置多条流路31。
另外,如图12A所示,也可以是1条流路31按照能够冷却基板10整体的方式蛇行配置。
另外,如图13A~13C所示,流路31的出入口32、33也可以在基板10的主面12上开口。
另外,流路31的图形(路径)、截面形状不限于以上的例示,也能够适当设计。
优选流路31在3维的平面方向或者厚度方向上与贯通孔13具有一定的间隔,以使其与具有贯通布线16的贯通孔13不连通。
在本方式例中,贯通孔13相对于基板10的主面11、12倾斜地形成,所以如图12A等所示,即使与基板10的主面11、12平行的流路31在俯视时看上去与贯通孔13重合,贯通孔13与流路31也不连通。也就是说,若在基板10的厚度方向上的位置相互错位,则贯通孔13与流路31不会彼此相连。
优选流路31在对基板10形成具有贯通布线16的贯通孔13时一起形成。
在图14A~14E中表示了制造上述带流路贯通布线基板30的方法的一例。
首先,如图14A、14B所示,向基板10照射激光34,在基板10内形成将基板10的材料改性而成的改性部35、36。改性部35设置在要形成贯通孔13的区域,改性部36设置在要形成流路31的区域。
在本方式例中,使用飞秒激光作为激光34的光源,按照在基板10内部对焦的方式照射激光光束,得到例如直径为数μm~数十μm的改性部35、36。通过控制基板10内部的激光34的焦点位置,能够形成具有希望的形状的改性部35、36。而且,一般地对于改性部35、36,与基板10的材料相比折射率发生变化。
如图14A~14E所示,要成为流路31的改性部36也可以相对于基板10的主面11、12平行地形成。这时,当激光34的照射范围(特别是从激光光源到基板10内部的焦点为止的范围)与要成为贯通孔13的改性部35重合时,由于改性部35的折射率变化,在激光34与改性部35重合的范围,激光34的焦点位置有可能发生偏离。这样,为了避免与已经形成的其他的改性部35的重合,不仅从第1主面11侧照射激光34,也可以根据位置从第2主面12侧照射激光34。
接下来,将形成了改性部35、36的基板10浸入蚀刻液(药液),通过蚀刻(湿法蚀刻)从基板10除去改性部35、36。其结果,如图14C所示,在改性部35、36所存在的部分形成贯通孔13以及流路31。对于本方式例,使用石英作为基板10材料,使用以氢氟酸(HF)为主成分的溶液作为蚀刻液。该蚀刻是利用与基板10的未被改性的部分相比,改性部35、36非常快地被蚀刻的原理,作为结果能够形成与改性部35、36的形状对应的贯通孔13以及流路31。
在本方式例中,微细孔13的孔径为50μm。微细孔13的孔径能够根据贯通布线16的用途,从10μm左右到300μm左右适当设定。流路31的孔径可以与微细孔13的孔径是相同程度,也可以更小(细)或者更大(粗)。流路31的孔径没有特别的限定,能够设置为例如从10μm左右到500μm左右。另外,流路31的孔径也可以具有局部的细的部分或局部的粗的部分。
而且,蚀刻液不限于氢氟酸,也能够使用例如向氢氟酸中适量添加了硝酸等的氟硝酸系(フツ硝酸系)的混酸、氢氧化钾等碱性水溶液。另外,根据基板10材料,也能够使用其他的药液。
基板10的材料不限于石英玻璃(silica glass),能够使用例如蓝宝石等绝缘基板、含有碱成分等的另外的其他成分玻璃基板,其厚度也能够在150μm~1mm左右适当设定。
接下来,如图14D所示,对贯通孔13填充导体或者成膜来形成贯通布线16。对导体的填充或者成膜能够适当使用镀敷法、溅射法、熔融金属填充法、CVD、超临界成膜法等。这时,优选在要成为流路31的出入口32,33的位置上预先设置抗蚀剂等保护层,以使导体不侵入流路31内。抗蚀剂能够使用树脂抗蚀剂、无机系材料的薄膜等。
进而根据需要,如图14E所示,在贯通布线16的上下形成连接盘部17、18。对连接盘部17、18的形成,能够适当使用镀敷法、溅射法等。
这样,若同时地形成贯通孔13和流路31,则能够简略化制造步骤,能够降低成本。另外,由于控制贯通孔13与流路31的位置关系较容易,因此能够防止错误地连结贯通孔13与流路31。
而且,在形成多个改性部35、36后,不需要对所有的改性部35、36进行蚀刻来形成贯通孔13、流路31。例如,将一部分的改性部35、36在其两端设置抗蚀剂等保护层等来进行保护,以使其不被蚀刻,从而能够选择要蚀刻的改性部35、36。由此,能够仅在需要的位置上形成贯通孔13、流路31。
例如,在预先按照与器件1、2的所有的电极3、4对应的方式形成改性部35后,根据器件1、2的使用方式等不需要对电极3、4的一部分设置贯通布线16的情况下进行保护,以使对与不需要该贯通布线16的位置对应的改性部35不进行蚀刻,能够不对贯通孔13开口。这样,在形成改性部35的阶段一律地形成改性部35后,能够在蚀刻的阶段选择形成贯通布线16的位置,因此形成改性部35的激光的照射位置的控制变得容易。
另外,对于上述在贯通孔(微细孔)13以及/或者流路31的形成过程中,对通过控制来自飞秒激光器的激光的焦点位置在基板10的内部形成具有希望的形状的改性部35、36的方法进行了说明,但本发明不仅限于此。
例如,将存储了与改性部35、36的希望的形状对应的图形的全息图配置于飞秒激光器与基板之间,通过将激光穿过全息图向基板照射,能够在基板的内部一并形成具有希望的形状的改性部。然后,通过蚀刻该改性部,能够形成希望的贯通孔(微细孔)以及/或者流路。
产业上应用的可能性
本发明使用具有贯通了基板的贯通布线的贯通布线基板来在其两面上安装器件,因此能够被广泛地利用。
附图标记的说明
1第1器件;
2第2器件;
3、4电极;
10基板;
11第1主面(一方主面);
12第2主面(另一方主面);
13贯通孔(微细孔);
14第1开口部;
15第2开口部;
16贯通布线;
19、19A、19B、19C贯通布线基板;
30、30A、30B带流路贯通布线基板;
31流路;
35、36被改性的区域(改性部)

Claims (6)

1.一种器件安装构造,其具备:
贯通布线基板,其具有基板和多个贯通布线,该多个贯通布线形成在从作为该基板的一方主面的第1主面向作为另一方主面的第2主面贯通所述基板的多个贯通孔的内部;
第1器件,其具有多个电极,并且这些电极按照与所述第1主面对置的方式进行配置;和
第2器件,其具有配置与该第1器件的各电极的配置不同的多个电极,并且这些电极按照与所述第2主面对置的方式进行配置;
该器件安装构造的特征在于,
所述各贯通布线具有第1导通部和第2导通部,该第1导通部被设置在所述第1主面的与所述第1器件的电极对应的位置,该第2导通部被设置在所述第2主面的与所述第2器件的电极对应的位置,
所述第1器件的各电极与所述第1导通部电连接,
所述第2器件的各电极与所述第2导通部电连接。
2.根据权利要求1所述的器件安装构造,其特征在于,
所述各贯通布线具有连接所述第1导通部与所述第2导通部之间的大致直线形状。
3.根据权利要求1或2所述的器件安装构造,其特征在于,
在所述基板的内部设置有流路。
4.一种器件安装方法,其特征在于,包括:
准备第1器件和第2器件的步骤,该第1器件具有多个电极,该第2器件具有配置与该第1器件的各电极的配置不同的多个电极;
贯通孔形成步骤,按照在作为基板的一方主面的第1主面的与所述第1器件的各电极对应的位置和作为所述基板的另一方主面的第2主面的与所述第2器件的各电极对应的位置进行开口的方式,形成从所述第1主面向所述第2主面贯通所述基板的多个贯通孔;
贯通布线形成步骤,通过在所述各贯通孔内填充导体或者进行成膜来形成贯通布线,该贯通布线具有在所述第1主面侧露出的第1导通部和在所述2主面侧露出的第2导通部;和
安装步骤,其将所述第1器件按照与所述基板的所述第1主面对置的方式进行配置,并将该第1器件的各电极与对应的所述第1导通部接合,并且将所述第2器件按照与所述基板的所述第2主面对置的方式进行配置,并将该第2器件的各电极与对应的所述第2导通部接合。
5.根据权利要求4所述的器件安装方法,其特征在于,
在所述贯通孔形成步骤中,在所述基板的内部形成流路。
6.根据权利要求5所述的器件安装方法,其特征在于,
所述贯通孔形成步骤具有对所述基板中形成所述贯通孔的区域以及形成所述流路的区域进行改性的步骤和通过蚀刻除去所述被改性的区域的步骤。
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Application publication date: 20120418