CN102414826B - 具有反射层系统的光电子半导体本体 - Google Patents

具有反射层系统的光电子半导体本体 Download PDF

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Publication number
CN102414826B
CN102414826B CN201080018792.5A CN201080018792A CN102414826B CN 102414826 B CN102414826 B CN 102414826B CN 201080018792 A CN201080018792 A CN 201080018792A CN 102414826 B CN102414826 B CN 102414826B
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China
Prior art keywords
layer
radiation
sequence
radiation transmission
attachment
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CN201080018792.5A
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English (en)
Chinese (zh)
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CN102414826A (zh
Inventor
罗伯特·沃尔特
文森特·格罗利尔
迈克尔·施马尔
科比尼安·佩尔茨尔迈尔
弗朗茨·埃伯哈德
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102414826A publication Critical patent/CN102414826A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
CN201080018792.5A 2009-04-30 2010-04-26 具有反射层系统的光电子半导体本体 Active CN102414826B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009019524.6 2009-04-30
DE102009019524.6A DE102009019524B4 (de) 2009-04-30 2009-04-30 Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
PCT/EP2010/055546 WO2010125028A2 (de) 2009-04-30 2010-04-26 Optoelektronischer halbleiterkörper mit einem reflektierenden schichtsystem

Publications (2)

Publication Number Publication Date
CN102414826A CN102414826A (zh) 2012-04-11
CN102414826B true CN102414826B (zh) 2017-04-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080018792.5A Active CN102414826B (zh) 2009-04-30 2010-04-26 具有反射层系统的光电子半导体本体

Country Status (7)

Country Link
US (1) US9012940B2 (enExample)
JP (1) JP2012525693A (enExample)
KR (1) KR101689413B1 (enExample)
CN (1) CN102414826B (enExample)
DE (1) DE102009019524B4 (enExample)
TW (1) TW201101535A (enExample)
WO (1) WO2010125028A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014139997A (ja) * 2013-01-21 2014-07-31 Rohm Co Ltd 発光素子および発光素子パッケージ
DE102015107657A1 (de) 2015-05-15 2016-12-01 Alanod Gmbh & Co. Kg Verfahren zur Herstellung eines Anschlussträgers, Anschlussträger sowie optoelektronisches Halbleiterbauteil mit einem Anschlussträger
JP6806446B2 (ja) * 2016-01-25 2021-01-06 日亜化学工業株式会社 半導体素子及びその製造方法
JP6892909B2 (ja) * 2017-11-16 2021-06-23 ローム株式会社 発光素子および発光素子パッケージ
JP2018026597A (ja) * 2017-11-16 2018-02-15 ローム株式会社 発光素子および発光素子パッケージ
DE102018107673A1 (de) 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Herstellungsverfahren für einen optoelektronischen Halbleiterchip
US12113279B2 (en) 2020-09-22 2024-10-08 Oti Lumionics Inc. Device incorporating an IR signal transmissive region
JP7829947B2 (ja) * 2020-10-09 2026-03-16 オーティーアイ ルミオニクス インコーポレーテッド 低い屈折率の被膜及び放射線修正層を含むデバイス
US12672476B2 (en) 2020-10-29 2026-06-30 Oti Lumionics Inc. Opto-electronic device with nanoparticle deposited layers
KR20250139404A (ko) 2020-12-07 2025-09-23 오티아이 루미오닉스 인크. 핵 생성 억제 코팅 및 하부 금속 코팅을 사용한 전도성 증착 층의 패턴화
CN117080343A (zh) * 2021-11-19 2023-11-17 厦门市三安光电科技有限公司 发光二极管及其制备方法
DE102023106511A1 (de) 2023-03-15 2024-09-19 Ams-Osram International Gmbh Optoelektronischer Halbleiterchip mit reflektierendem Schichtsystem

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254750A (ja) 1984-05-31 1985-12-16 Fujitsu Ltd 金配線の形成方法
DE19640240A1 (de) 1996-09-30 1998-04-02 Siemens Ag Halbleiteranordnung mit einer Schicht aus einem Edelmetall und Verfahren zum Herstellen derselben
US6587263B1 (en) 2000-03-31 2003-07-01 Lockheed Martin Corporation Optical solar reflectors
US20050040410A1 (en) * 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same
KR20050001425A (ko) * 2003-06-27 2005-01-06 아사히 가라스 가부시키가이샤 고반사경
DE102004040277B4 (de) 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
CN100442557C (zh) 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
FR2876841B1 (fr) 2004-10-19 2007-04-13 Commissariat Energie Atomique Procede de realisation de multicouches sur un substrat
JP4453515B2 (ja) 2004-10-22 2010-04-21 豊田合成株式会社 半導体発光素子
DE102005047168A1 (de) 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102006030094A1 (de) 2006-02-21 2007-08-30 Von Ardenne Anlagentechnik Gmbh Hochreflektierendes Schichtsystem und Verfahren zur Herstellung des Schichtsystems
JP5048960B2 (ja) 2006-03-20 2012-10-17 パナソニック株式会社 半導体発光素子
KR20080017180A (ko) * 2006-08-21 2008-02-26 삼성전기주식회사 반도체 발광장치
FR2913146B1 (fr) 2007-02-23 2009-05-01 Saint Gobain Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications
CN101276863B (zh) * 2007-03-29 2011-02-09 晶元光电股份有限公司 发光二极管及其制造方法
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP2008277651A (ja) * 2007-05-02 2008-11-13 Mitsubishi Chemicals Corp 発光ダイオード
DE102007029370A1 (de) 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
EP2176891B1 (en) 2007-07-19 2018-12-26 Lumileds Holding B.V. Vertical led with conductive vias
KR100910964B1 (ko) * 2007-08-09 2009-08-05 포항공과대학교 산학협력단 오믹 전극 및 이의 형성 방법
DE102007043181A1 (de) 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008021403A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
JP5634003B2 (ja) * 2007-09-29 2014-12-03 日亜化学工業株式会社 発光装置
JP2009135188A (ja) * 2007-11-29 2009-06-18 Sony Corp 光センサーおよび表示装置

Also Published As

Publication number Publication date
KR101689413B1 (ko) 2016-12-23
JP2012525693A (ja) 2012-10-22
TW201101535A (en) 2011-01-01
DE102009019524B4 (de) 2023-07-06
US9012940B2 (en) 2015-04-21
DE102009019524A1 (de) 2010-11-04
WO2010125028A2 (de) 2010-11-04
US20120049228A1 (en) 2012-03-01
WO2010125028A3 (de) 2011-04-07
CN102414826A (zh) 2012-04-11
KR20120030394A (ko) 2012-03-28

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