CN102412145A - 在高深宽比图案上形成具有Si-N键的共形薄膜的方法 - Google Patents

在高深宽比图案上形成具有Si-N键的共形薄膜的方法 Download PDF

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CN102412145A
CN102412145A CN2011103484262A CN201110348426A CN102412145A CN 102412145 A CN102412145 A CN 102412145A CN 2011103484262 A CN2011103484262 A CN 2011103484262A CN 201110348426 A CN201110348426 A CN 201110348426A CN 102412145 A CN102412145 A CN 102412145A
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洪国维
清水亮
难波邦年
李禹镇
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ASM Japan KK
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Abstract

在具有图案化表面的衬底上形成具有Si-N键的共形介电薄膜的方法包括：向反应空间中导入反应气体；以小于5秒历时的脉冲向该反应空间中导入硅前驱物；在硅前驱物的脉冲期间向该反应空间施加第一RF功率；在硅前驱物脉冲的间隔期间向该反应空间施加第二RF功率，其中硅前驱物脉冲的间隔期间的第二RF功率的平均强度比硅前驱物脉冲期间的第一RF功率的平均强度要大；以及重复该周期以在衬底的图案化表面上形成所需厚度的具有Si-N键的共形介电薄膜。

Description

在高深宽比图案上形成具有Si-N键的共形薄膜的方法
背景技术
发明领域
本发明涉及半导体集成电路制造，并且尤其涉及到一种形成诸如氮化硅薄膜的共形介电薄膜的方法。
相关技术描述
在半导体衬底上制造的用于大规模集成的集成电路需要多级金属互连以电性互连形成在半导体芯片上的半导体器件的不连续层。不同级别的互连由不同的绝缘或介电层分隔，这些绝缘或介电层被蚀刻以形成通孔从而连接一级金属到另一级金属。
芯片设计的发展持续地需要比以前更快的电路和更大的电路密度。对于具有更大电路密度的更快电路，就需要用于制造这种集成电路的材料具有某些特性，尤其是当集成电路组件的尺寸减小到亚微米级时更是如此。同样地，为了更大的集成电路密度，集成电路组件制造需要某些工艺顺序。
近年来，在低温(小于400℃)下沉积的氮化硅层已经在用于存储器件的大量重要应用中使用，例如，用作钝化层、表面保护层和/或用于晶体管栅极的隔离。氮化硅薄膜可以通过等离子体增强化学气相沉积(PECVD)法来形成。PECVD方法比其他CVD方法的主要优点在于更高的沉积速率，以及在宽范围的折射率上的控制。PECVD方法的另一个优点在于该工艺可以在一个相对低的温度下实施，例如400℃以下的温度，保持单元工艺的总热预算至最小。
但是，形成氮化硅的PECVD方法导致在包含小和/或高深宽比特征的衬底上较差的共形性或较差的台阶覆盖。在小电路和器件中，诸如超大规模集成(ULSI)电路，较差的共形覆盖会阻碍更高密度电路器件和元件的发展。
概要
本发明的至少一实施例的目的是提供一种在例如用于集成电路的具有关于沟道的图案化表面的衬底上形成诸如氮化硅层之类的具有Si-N键的共形介电薄膜的方法。
在本发明的一个实施例中，提供一种通过脉冲等离子体增强化学气相沉积(PECVD)或等离子体增强原子层沉积(PEALD)在具有高深宽比图案的半导体衬底表面上形成具有Si-N键的共形介电薄膜的方法。该方法包括：(i)向内部放置有衬底的反应空间中导入反应气体；(ii)以小于5秒历时的脉冲向反应空间中导入硅前驱物，其中一个脉冲和接着的脉冲之间的一个间隔构成一个反应周期；(iii)在每个周期中的硅前驱物脉冲期间向反应空间施加第一RF功率；(iv)在每个周期中的硅前驱物脉冲的间隔期间向反应空间施加第二RF功率，其中在该硅前驱物脉冲的间隔期间的第二RF功率的平均强度大于在该硅前驱物脉冲期间的第一RF功率；以及(v)重复该周期以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的共形介电薄膜。在该公开方案中，该“气体”包括蒸发的固体和/或液体。进一步地，该“气体”指代单一气体或气体混合物。
在一些实施例中，通过两步施加脉冲形式的RF功率同时使其与硅前驱物的脉冲同步来产生RF等离子体。第一步施加发生在导入硅前驱物的时段期间。在一些实施例中，在第一步施加期间，RF等离子体在硅前驱物导入开始之后通过滞后的第一RF功率施加产生。在一些实施例中，第一RF功率的强度较低和/或第一RF功率的历时较短，以使前驱物分解以及使其分子在衬底表面吸收，而不增加分子在表面上的迁移率和扩散率。第二步施加发生在不导入硅前驱物的时段期间。在一些实施例中，在第二步施加期间，RF等离子体通过以高于第一RF功率的强度和/或在短于第一RF功率的时段里施加第二RF功率以增加分子的迁移率和扩散率。换句话说，在一些实施例中，第一步RF等离子体用于在表面上产生和吸收硅前驱物的分子，而第二步RF等离子体用于迁移表面上的分子，从而改善薄膜的共形性或台阶覆盖。
为了总结本发明的方面和超过相关技术所达到的优点，在本公开中描述了本发明的某些目的和优点。当然，应当理解根据本发明的一些特殊实施例没有必要实现所有这些目标和优点。因此，例如，本领域技术人员将意识到会以获得或优化本文所教导的一个优点或一组优点的方式来具体化或实施本发明，而没有必要获得本文所教导或建议的其他目标或优点。
本发明进一步的细节、特征和优点将从如下详细描述中体现。
附图简要说明
本发明的这些和其他特征现在将参考用于说明而不是限制本发明的优选实施例的附图进行描述。该附图用于说明目的而进行过分简化且不一定是按比例的。
图1是本发明中的一个实施例中使用的用于沉积氮化硅薄膜的PECVD装置的示意图。
图2说明了用于沉积介电薄膜的比较PECVD方法的工艺步骤。
图3是具有1.25的深宽比的图案化表面的示意性截面图，其中根据图2中的比较PECVD方法，薄膜的共形性或台阶覆盖将在95％或以上。
图4是具有2.5的深宽比的图案化表面的示意性截面图，其中根据图2中的比较PECVD方法，薄膜的共形性或台阶覆盖将在60％或以下。
图5说明了用于沉积介电薄膜的本发明的一个实施例的工艺步骤。
图6A至6K说明了用于沉积介电薄膜的本发明的实施例的工艺步骤。
具体实施例
本发明参考实施例进行描述但是并不意味着限制本发明。此外，在实施例中应用的元件可以自由地应用到其它实施例中，并且在不同实施例中应用的元件可以进行替换或互换除非其附加有特殊情况。进一步地，下述所指出的范围可包括或排除实施例中的端点。
如上所述，所公开的实施例包括在具有图案化表面的衬底上形成具有Si-N键的共形介电薄膜的方法，包括：(i)向内部放置有衬底的反应空间中导入反应气体；(ii)在小于5秒历时的脉冲下向该反应空间中导入硅前驱物，其中一个脉冲和接着的脉冲之间的一个间隔构成一个反应周期；(iii)在每个周期中的硅前驱物脉冲期间向反应空间施加第一RF功率；(iv)在每个周期中的硅前驱物脉冲的间隔期间向反应空间施加第二RF功率，其中在硅前驱物脉冲的间隔期间的第二RF功率的平均强度大于硅前驱物脉冲期间的第一RF功率的平均强度；以及(v)重复该周期以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的共形介电薄膜。
施加第一RF功率的步骤也作为“吸收步骤”或“第一步骤”被提及，在该步骤中供应硅前驱物，而施加第二RF功率的步骤也作为“迁移步骤”或“第二步骤”被提及，在该步骤中不供应硅前驱物。
在一些实施例中，在硅前驱物的脉冲期间，第一RF功率的平均强度为约0.01W/cm2至约1W/cm2(典型为0.02W/cm2至0.05W/cm2)每衬底面积，而在硅前驱物脉冲的间隔期间，第二RF功率的平均强度为0.02W/cm2至约5W/cm2(优选0.04W/cm2至0.1W/cm2)每衬底面积。
在一些实施例中，第二RF功率的最高强度比第一RF功率的最高强度更高，例如，如图5、6A、6B、6C、6D、6E、6F、6J和6K所示。在一些实施例中，“更高”指比第一RF功率要高至少10％、50％、100％、200％、300％、500％或1000％(或由前述数字所限定的任何范围)。在一些实施例中，第二RF功率的最高强度等于第一RF功率的最高强度，例如，如图6G、6H和6I所示。但是，如上所述，在硅前驱物脉冲的间隔期间的第二RF功率的平均强度比硅前驱物脉冲期间的第一RF功率的平均强度大。“平均强度”(
Figure BSA00000607473900041
)可以通过以下公式计算：
W ‾ = ∫ T 1 T 3 Wdt T 3 - T 1
其中T1是吸收步骤开始的时间，T3是吸收步骤结束的时间，并且W是RF功率的瓦特/小时，其为时间(
Figure BSA00000607473900043
)的函数。图5图示了时间点T1、T2、T3和T4(T2是RF功率施加开始的时间，T4是迁移步骤结束的时间)。T3也是迁移步骤开始的时间。这个方程可以用相同的方式应用到其它实施例中。
在一些实施例中，第一RF功率的强度以一给定的斜坡上升速率从零开始变化，如图5、6A、6B、6D、6E、6F、6G、6H和6I所示。在一些实施例中，第一RF功率的施加在吸收步骤完毕之前结束，如图6C所示。在一些实施例中，第一RF功率的强度在整个吸收步骤中是恒定的，如图6J和6K所示。在一些实施例中，当施加第一RF功率时，第一RF功率的强度是恒定的，然而施加第一RF功率的时间段比整个吸收步骤的时间段要短，如图6B、6C、6D、6F和6I所示。在一些实施例中，第一RF功率的强度在各步骤中改变，如图6A所示。在一些实施例中，第一RF功率的强度以一恒定速率随时间增加，如图6E、6G和6H所示。在一些实施例中，第一RF功率以一下降的速率随时间改变，如图5所示。类似的，第二RF功率可以如图5和6A至6K所示施加。第二RF功率可以在迁移步骤期间随时间降低，如图6F和6H所示。施加第二RF功率的时间段可以比整个迁移步骤的时间段要短，如图6B、6D和6K所示。在一些实施例中，斜坡上升速率或斜坡下降速率可以是10W/秒至1000W/秒，典型50W/秒至500W/秒。可以使用如图5和6A-6K所示的第一RF功率和第二RF功率的施加图案的任意组合(在步骤中恒定、以恒定速率、以指数或对数连续或间断地降低或增加)，以有效分解前驱物并使其分子在衬底表面上吸收而不增加吸收步骤中表面上分子的迁移率和扩散率，并有效地增加迁移步骤中分子的迁移率和扩散率，从而改善图案化表面上薄膜沉积的共形性或台阶覆盖，即便图案化表面具有高的深宽比。
在一些实施例中，衬底的图案化表面具有至少约1.3、1.5、2、2.5、3、5或10或由前面数值限定的任何范围的深宽比。在一些实施例中，凹槽的宽度可以在约40nm至约200nm的范围，典型约60nm至约100nm。
在一些实施例中，所沉积的共形薄膜具有至少约80％、85％、90％或95％或由前述数值限定的任何范围的共形性。在一些实施例中，甚至当薄膜被沉积在具有约1.5或以上的深宽比的图案化表面上时共形性可以超过90％。“共形性”或“台阶覆盖”可以定义成沉积在沟道侧壁上的层的平均厚度与沉积在衬底上表面的层的平均厚度的百分比。在一些实施例中，共形性和台阶覆盖可以定义为沉积在图案化表面上的层的最薄厚度与该层的最厚厚度的百分比。
在一些实施例中，第一RF功率和第二RF功率均为具有相同频率的单频RF功率，诸如13.56MHz，27MHz，或60MHz。在一些实施例中，可以使用具有不同频率的RF功率的组合(例如小于2MHz和高于5MHz的组合)，并且同样的，第一RF功率和第二RF功率可具有不同频率。
在一些实施例中，在硅前驱物的脉冲期间和硅前驱物脉冲的间隔期间，反应空间的压强控制在700Pa或更低(典型200至500Pa)。
在一些实施例中，第二前驱物和硅前驱物一起提供。该第二前驱物包括诸如己烷之类的烃类气体使得获得的薄膜掺杂碳。诸如戊烷和辛烷之类的其它的烃类气体可以用来替代己烷，或进行混合。在本发明中，在一些实施例中，“前驱物”指代硅前驱物和烃前驱物的混合。
在一些实施例中，该硅前驱物具有化学式SiαHβXγ，其中α，β和γ为整数(γ包括零)，其中X包括N和/或Cl。在一些实施例中，α可以是1至5，β可以是1至10，以及γ可以是0至6。在一个实施例中，m可以是2至18，以及n可以是6至30。在一些实施例中，硅前驱物从N(SiH3)3，SiH4，Si[N(C2H5)2]2H2，Si[N(CH3)2]3H，[(CH3)2N]3SiCl，Si[N(CH3)(C2H5)]3H，Si2[NH(C2H5)6]和SiH2[N(C2H5)2]所组成的群组中进行选择。
在一些实施例中，反应气体包括N2和H2的混合物以及NH3和H2的混合物中的至少一种。在一些实施例中，使用具有大约10/1至1/10的N2/H2的摩尔流量比的N2和H2的混合物。如果硅前驱物包含氮，N2/H2的摩尔流量比可以为大约1/10至0。在一些实施例中，NH3和H2的混合物(其也被称为N2/H2反应气)具有与N2/H2相同的摩尔流量比。
在一些实施例中，反应物进一步包括稀有气体，其中包括稀有气体的反应气体连续导入到反应空间使得包括稀有气体的反应气体流作为硅前驱物脉冲的间隔期间的净化气体。在一些实施例中，N2/H2反应气体可以用脉冲提供，而稀有气体连续供应。在一些实施例中，稀有气体可以从He，Ar，Kr和Xe组成的群组中选择的一种或多种气体，并且稀有气体的摩尔流量比硅源的摩尔流量大。在一些实施例中，稀有气体包括氦气和氩气的混合物(在一些实施例中氦气/氩气的摩尔流量比为约5/1至约1/5)。
在一些实施例中，导入进反应腔的N2/H2反应气体和稀有气体中每一个的流量大约为30sccm至3000sccm。在一些实施例中，N2/H2反应气体和稀有气体中每一个的流量为约1500sccm至约2500sccm。在一些实施例中，供应稀有气体，但是不供应N2/H2反应气体。硅前驱物和烃前驱物可以按照与上述相近的流量供应。但是，在一些实施例中，前驱物在表面吸收饱和，于是，更高的流量并不必然导致更厚的薄膜。
在一些实施例中，只有三种类型的气体(即硅前驱物、N2/H2反应气体和稀有气体)可以用于SiN薄膜，仅有四种类型的气体(即硅前驱物、烃前驱物、N2/H2反应气体和稀有气体)可以用于SiCN薄膜，以及不使用诸如碳前驱物之类的其他气体。
在一些实施例中，脉冲历时等于或短于脉冲之间的间隔。进一步地，在一些实施例中，硅前驱物以脉冲形式导入，脉冲的历时为大约0.1秒至1.0秒且脉冲之间的间隔在大约0.1秒至大约3.0秒。在一些实施例中，硅前驱物的脉冲历时至少约为0.1秒但是小于约5.0秒，小于约3.0秒或小于约1.0秒，而间隔长度至少约为0.1秒，至少约为0.5秒，至少约为1.0秒，但是小于约10秒，小于约5.0秒或小于约3.0秒。
在一些实施例中，共形介电薄膜为SiN薄膜或SiCN薄膜。
在一些实施例中，导入硅前驱物、导入反应气体、施加RF功率和重复周期的步骤作为脉冲等离子体增强化学气相沉积或等离子体增强原子层沉积进行控制。
在一些实施例中，当薄膜在衬底上沉积时，衬底可以保持在0℃至550℃的温度。在一些实施例中在沉积期间衬底的温度为约250℃至约400℃。
在一些实施例中，沉积条件可以包括如下：
前驱物：
三甲硅烷基胺：10-2000sccm(典型1000至2000sccm)
己烷：0-2000sccm(典型1000至2000sccm)
供应时间：0.1-5秒(典型0.1至1秒)
反应物：
氢气：0-2000sccm(典型500至1000sccm)
氮气：0-2000sccm(典型500至2000sccm)
氨气：0-2000sccm(典型0至800sccm)
工艺氦气：0-2000sccm(典型800至1500sccm)
密封氦气：200-600sccm(典型300至500sccm)
氩气：100-2000sccm(典型800至1500sccm)
RC条件：
压强：200-700Pa(典型250至400Pa)
衬底温度：100-500℃(优选300至400℃)
在一些实施例中，共形介电薄膜的介电常数可以在4.5至7.5的范围。在一些实施例中介电常数约为6.5至约7.2。
实施例参考附图进行解释但不意味着限制本发明。图1是由等离子体CVD反应器和流量控制阀组成的装置的示意图，与进行下述工艺序列的程序化的控制相关联，其可以用于本发明的实施例。
在这个例子中，通过在反应腔3的内部11中提供一对平行并互相面对的电导性平板电极4，2，向一侧施加RF功率5，并且将另一侧电性接地12，在电极之间激发等离子体。在一较低台(其也用作下部电极2)上提供一温度调节器，并且位于其上的衬底1的温度保持在恒定的给定温度。上部电极4也用作喷淋板，并且反应气体(C)和添加气体或烃前驱物(B)分别通过气体流量控制器21，22和喷淋板导入到反应腔3中。同样的，硅前驱物(A)通过气体流量控制器23、脉冲流量控制阀31和喷淋板导入到反应腔3中。此外，在反应腔3中，提供排气管6，通过该排气管6将反应腔3的内部11中的气体排出。此外，为反应腔提供密封气体流量控制器24以将密封气体导入到反应腔3的内部11。在反应腔内部的用于分隔反应区和传输区的分隔板在该附图中被省略掉。密封气体不是必须的但是用于一些实施例中帮助阻挡反应气体与分隔板之下的反应腔的下部进行交互流动。
对于脉冲流量控制阀31，用于ALD(原子层沉积)的脉冲供应阀可以在一些实施例中使用。
在上文中，RF功率的脉冲可以通过调节匹配盒(未示出)来完成。RF功率需要一个最小的时间段来进行放电，该时间段典型如8毫秒一样短。于是，例如，通过调节匹配盒，RF功率的持续时间可以很容易控制在约0.1秒。
在一些实施例中，每周期沉积的平均厚度可以是约0.6nm/周期至约1.0nm/周期。硅前驱物的脉冲供应可以持续直到获得所需的薄膜厚度。如果所需要的薄膜厚度为20nm至100nm，可以进行约20个周期至约150个周期(例如40-100周期)。
实施例将参考特定的例子进行解释而不意味着对本发明进行限制。在其他条件下，特定的例子中的数值性数字可以在至少±50％的范围内进行修改，其中这些范围的端点可以包括或排除。在其中条件和/或结果不是特定的本发明公开中，根据本发明的公开，本领域技术人员可以很容易的通过常规实验提供这些条件和/或结构。
示例
示例1
使用在图5所示的序列和图1所示的PECVD装置在如下所述的条件下在具有沟道的衬底上形成SiCN层。这些沟道包括具有1.25的深宽比(如图3所示的120nm的宽度和150nm的深度，其中沟道33形成于衬底31上的蚀刻的低k层32之间)的相对宽的沟道，具有2.0的深宽比(75nm的宽度和150nm的深度)的中等沟道，和具有2.5的深宽比(如图4中所示的60nm的宽度和150nm的深度，其中沟道43形成于衬底41上的蚀刻的低k层42之间)的相对窄的沟道。于是涂覆了不同深宽比的沟道。
三甲硅烷基胺：2000sccm
己烷：2000sccm
氢气：1000sccm
氮气：100sccm
工艺氦气：1400sccm
密封氦气：500sccm
氩气：1000sccm
衬底温度：400℃
压强：300Pa
前驱物(三甲硅烷基胺和己烷)供应时间：0.5秒供应，2秒供应停止RF功率(13.56MHZ的频率)：
RF第一斜坡上升时间：0.1秒(0→18W)，从0.4秒的点开始
RF第二斜坡上升时间：2秒(18→23W)
Figure BSA00000607473900092
完成沉积(500个周期)之后，利用扫描电子显微镜(SEM)观察沟道并且确定共形性。
比较示例1
在与示例1中相同的条件下，区别在于RF功率的应用图案，在衬底上形成SiCN层。RF功率的应用图案如图2所示，其中RF功率为恒定的25W并且持续施加。在完成沉积之后，利用扫描电子显微镜观察沟道并且确定共形性。
结果如下表1所示。
表1
Figure BSA00000607473900093
如表1所示，在示例1中，当用两步法施加RF功率时，其中当前驱物在第二步骤(迁移步骤)中不供应时施加比在第一步骤(吸收步骤)中更高强度的RF功率，不管深宽比如何，SiCN薄膜的共形性都令人惊奇的高。不仅当深宽比为1.25时的共形性为95％，而且当深宽比为2.0和2.5时也一样。作为对比，比较示例1中，当RF功率恒定地和持续地贯穿整个周期中施加时，SiCN薄膜的共形性仅在深宽比为1.25时是好的。当深宽比变得更高时共形性逐渐降低，当深宽比为2.5时，共形性低至65％。
示例3
除了压强在与示例1相同的条件下，在具有2.5的深宽比的沟道的衬底上形成SiCN层。压强为600Pa。完成沉积之后，利用扫描电子显微镜(SEM)观察沟道并且确定共形性。
结果如下表2所示。
表2
Figure BSA00000607473900101
如表2所示，在示例3中，当压强较高时(示例3)，共形性没有当压强低(示例1)的时候好。但是，示例3中的共形性明显的好于比较示例1，因为其与示例1一样采用两步施加RF功率。
本发明的至少一个公开实施例的方法的明显优点在于可以在不同类型的衬底上形成高共形的氮化硅层或其他Si-N介电层。
本领域技术人员应当理解进行大量的和不同的修改而不脱离本发明的精神。此外，应当清楚的理解本发明的形式仅是阐述性的而不意味着对本发明范围的限制。

Claims (19)

1.一种在具有图案化表面的衬底上形成具有Si-N键的共形介电薄膜的方法，包括：
向内部放置有所述衬底的反应空间中导入反应气体；
以小于5秒历时的脉冲向所述反应空间中导入硅前驱物，其中一个脉冲和接着的脉冲之间的一个间隔构成一个反应周期；
在每个周期中的硅前驱物脉冲期间向所述反应空间施加第一RF功率；
在每个周期中的硅前驱物脉冲的间隔期间向所述反应空间施加第二RF功率，其中在所述硅前驱物脉冲的间隔期间的所述第二RF功率的平均强度大于在所述硅前驱物脉冲期间的所述第一RF功率的平均强度；以及
重复所述周期以在所述衬底的所述图案化表面上形成具有期望厚度的具有Si-N键的共形介电薄膜。
2.根据权利要求1所述的方法，其特征在于，所述第二RF功率的最高强度高于所述第一RF功率的最高强度。
3.根据权利要求1所述的方法，其特征在于，所述第一RF功率的强度以给定的斜坡上升速率从零变化。
4.根据权利要求1所述的方法，其特征在于，所述第一RF功率和第二RF功率均为具有相同频率的单频RF功率。
5.根据权利要求1所述的方法，其特征在于，在所述硅前驱物脉冲期间所述第一RF功率的平均强度为约0.01W/cm2至约1W/cm2每衬底面积，而在所述硅前驱物脉冲的间隔期间所述第二RF功率的平均强度为0.02W/cm2至约5W/cm2每衬底面积。
6.根据权利要求1所述的方法，其特征在于，所述衬底的所述图案化表面具有大约1.5或更高的深宽比。
7.根据权利要求1所述的方法，其特征在于，所述共形薄膜具有约90％或更高的共形性。
8.根据权利要求1所述的方法，其特征在于，在所述硅前驱物脉冲期间和在所述硅前驱物脉冲的间隔期间所述反应空间的压强控制在500Pa或更低。
9.根据权利要求1所述的方法，其特征在于，进一步包括导入通过与所述硅前驱物脉冲同步其流量的烃类气体。
10.根据权利要求1所述的方法，其特征在于，所述烃类气体为己烷。
11.根据权利要求1所述的方法，其特征在于，所述硅前驱物的公式为SiαHβXγ，其中α，β和γ为整数(γ包括零)，其中X包括N和/或Cl。
12.根据权利要求11所述的方法，其特征在于，所述硅前驱物从N(SiH3)3，SiH4，Si[N(C2H5)2]2H2，Si[N(CH3)2]3H，[(CH3)2N]3SiCl，Si[N(CH3)(C2H5)]3H，Si2[NH(C2H5)6]和SiH2[N(C2H5)2]所组成的群组中进行选择。
13.根据权利要求1所述的方法，其特征在于，所述反应气包括持续导入到所述反应空间的稀有气体。
14.根据权利要求1所述的方法，其特征在于，脉冲历时等于或小于脉冲之间的间隔。
15.根据权利要求14所述的方法，其特征在于，所述硅前驱物以历时约0.1秒至约1.0秒的脉冲导入，脉冲之间的间隔为约0.1秒至约3.0秒。
16.根据权利要求1所述的方法，其特征在于，所述反应气包括持续导入到所述反应空间中的N2和H2的混合物以及NH3和H2的混合物中的至少一种。
17.根据权利要求13所述的方法，其特征在于，所述稀有气体包括氦气和氩气的混合物。
18.根据权利要求1所述的方法，其特征在于，所述共形介电薄膜为SiN薄膜或SICN薄膜。
19.根据权利要求1所述的方法，其特征在于，导入硅前驱物、导入反应气体、施加RF功率和重复周期的步骤作为脉冲等离子体增强化学气相沉积或等离子体增强原子层沉积来控制。
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