CN102403228A - 具有锗硅外延层的pmos晶体管的制备方法 - Google Patents
具有锗硅外延层的pmos晶体管的制备方法 Download PDFInfo
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- CN102403228A CN102403228A CN2010102858095A CN201010285809A CN102403228A CN 102403228 A CN102403228 A CN 102403228A CN 2010102858095 A CN2010102858095 A CN 2010102858095A CN 201010285809 A CN201010285809 A CN 201010285809A CN 102403228 A CN102403228 A CN 102403228A
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CN2010102858095A CN102403228A (zh) | 2010-09-17 | 2010-09-17 | 具有锗硅外延层的pmos晶体管的制备方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681333A (zh) * | 2012-09-12 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
WO2024016410A1 (zh) * | 2022-07-18 | 2024-01-25 | 长鑫存储技术有限公司 | 半导体结构及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6022785A (en) * | 1998-06-15 | 2000-02-08 | United Microelectronics Corp. | Method of fabricating a metal-oxide-semiconductor transistor |
CN101032009A (zh) * | 2004-06-24 | 2007-09-05 | 应用材料股份有限公司 | 用于形成晶体管的方法 |
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2010
- 2010-09-17 CN CN2010102858095A patent/CN102403228A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6022785A (en) * | 1998-06-15 | 2000-02-08 | United Microelectronics Corp. | Method of fabricating a metal-oxide-semiconductor transistor |
CN101032009A (zh) * | 2004-06-24 | 2007-09-05 | 应用材料股份有限公司 | 用于形成晶体管的方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681333A (zh) * | 2012-09-12 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
CN103681333B (zh) * | 2012-09-12 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
WO2024016410A1 (zh) * | 2022-07-18 | 2024-01-25 | 长鑫存储技术有限公司 | 半导体结构及制备方法 |
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