CN102396058B - 检测晶片上的缺陷 - Google Patents

检测晶片上的缺陷 Download PDF

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Publication number
CN102396058B
CN102396058B CN201080016422.8A CN201080016422A CN102396058B CN 102396058 B CN102396058 B CN 102396058B CN 201080016422 A CN201080016422 A CN 201080016422A CN 102396058 B CN102396058 B CN 102396058B
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China
Prior art keywords
wafer
original output
output
different piece
defect
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CN201080016422.8A
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English (en)
Chinese (zh)
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CN102396058A (zh
Inventor
J·黄
Y·张
S·陈
T·罗
L·高
R·沃林福德
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KLA Corp
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KLA Tencor Corp
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Publication of CN102396058A publication Critical patent/CN102396058A/zh
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Image Processing (AREA)
CN201080016422.8A 2009-02-13 2010-02-10 检测晶片上的缺陷 Active CN102396058B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15247709P 2009-02-13 2009-02-13
US61/152,477 2009-02-13
PCT/US2010/023802 WO2010093733A2 (en) 2009-02-13 2010-02-10 Detecting defects on a wafer

Publications (2)

Publication Number Publication Date
CN102396058A CN102396058A (zh) 2012-03-28
CN102396058B true CN102396058B (zh) 2014-08-20

Family

ID=42562263

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080016422.8A Active CN102396058B (zh) 2009-02-13 2010-02-10 检测晶片上的缺陷

Country Status (7)

Country Link
EP (1) EP2396815A4 (ja)
JP (1) JP5570530B2 (ja)
KR (1) KR101674698B1 (ja)
CN (1) CN102396058B (ja)
IL (1) IL214488A (ja)
SG (1) SG173586A1 (ja)
WO (1) WO2010093733A2 (ja)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
KR101623747B1 (ko) 2008-07-28 2016-05-26 케이엘에이-텐코어 코오포레이션 웨이퍼 상의 메모리 디바이스 영역에서 검출된 결함들을 분류하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
JP2012119512A (ja) * 2010-12-01 2012-06-21 Hitachi High-Technologies Corp 基板の品質評価方法及びその装置
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) * 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
KR102019534B1 (ko) * 2013-02-01 2019-09-09 케이엘에이 코포레이션 결함 특유의, 다중 채널 정보를 이용한 웨이퍼 상의 결함 검출
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9355208B2 (en) * 2013-07-08 2016-05-31 Kla-Tencor Corp. Detecting defects on a wafer
US10338004B2 (en) * 2014-03-27 2019-07-02 KLA—Tencor Corp. Production sample shaping that preserves re-normalizability
US9535010B2 (en) * 2014-05-15 2017-01-03 Kla-Tencor Corp. Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
US10127653B2 (en) * 2014-07-22 2018-11-13 Kla-Tencor Corp. Determining coordinates for an area of interest on a specimen
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9518934B2 (en) * 2014-11-04 2016-12-13 Kla-Tencor Corp. Wafer defect discovery
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10062543B2 (en) * 2015-06-23 2018-08-28 Kla-Tencor Corp. Determining multi-patterning step overlay error
CN108475422B (zh) * 2015-08-12 2019-09-06 科磊股份有限公司 在电子束图像中确定缺陷的位置
US10535131B2 (en) * 2015-11-18 2020-01-14 Kla-Tencor Corporation Systems and methods for region-adaptive defect detection
CN105699396A (zh) * 2016-03-29 2016-06-22 同高先进制造科技(太仓)有限公司 基于光扫描的焊接激光头保护镜污染检测装置及方法
US10699926B2 (en) * 2017-08-30 2020-06-30 Kla-Tencor Corp. Identifying nuisances and defects of interest in defects detected on a wafer
US11114324B2 (en) * 2019-04-10 2021-09-07 KLA Corp. Defect candidate generation for inspection

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010037026A (ko) * 1999-10-13 2001-05-07 윤종용 공정 파라미터 라이브러리를 내장한 웨이퍼 검사장비 및 웨이퍼 검사시의 공정 파라미터 설정방법
CN1339140A (zh) * 1999-11-29 2002-03-06 奥林巴斯光学工业株式会社 缺陷检查系统
CN1398348A (zh) * 2000-10-02 2003-02-19 应用材料有限公司 缺陷源识别器
CN1646896A (zh) * 2002-03-12 2005-07-27 应用材料有限公司 多检测器缺陷检测系统和用于检测缺陷的方法
KR20060075691A (ko) * 2004-12-29 2006-07-04 삼성전자주식회사 결함 검사 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07159337A (ja) * 1993-12-07 1995-06-23 Sony Corp 半導体素子の欠陥検査方法
JP3524853B2 (ja) * 1999-08-26 2004-05-10 株式会社ナノジオメトリ研究所 パターン検査装置、パターン検査方法および記録媒体
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
JP2007147376A (ja) * 2005-11-25 2007-06-14 Nikon Corp 検査装置
JP4851960B2 (ja) * 2006-02-24 2012-01-11 株式会社日立ハイテクノロジーズ 異物検査方法、および異物検査装置
JP2007298284A (ja) * 2006-04-27 2007-11-15 Mitsui Mining & Smelting Co Ltd 6価クロムの定量法
JP4641278B2 (ja) * 2006-05-02 2011-03-02 リンナイ株式会社 ガスバーナ
US8611639B2 (en) * 2007-07-30 2013-12-17 Kla-Tencor Technologies Corp Semiconductor device property extraction, generation, visualization, and monitoring methods
JP5022191B2 (ja) * 2007-11-16 2012-09-12 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010037026A (ko) * 1999-10-13 2001-05-07 윤종용 공정 파라미터 라이브러리를 내장한 웨이퍼 검사장비 및 웨이퍼 검사시의 공정 파라미터 설정방법
CN1339140A (zh) * 1999-11-29 2002-03-06 奥林巴斯光学工业株式会社 缺陷检查系统
CN1398348A (zh) * 2000-10-02 2003-02-19 应用材料有限公司 缺陷源识别器
CN1646896A (zh) * 2002-03-12 2005-07-27 应用材料有限公司 多检测器缺陷检测系统和用于检测缺陷的方法
KR20060075691A (ko) * 2004-12-29 2006-07-04 삼성전자주식회사 결함 검사 방법

Also Published As

Publication number Publication date
EP2396815A2 (en) 2011-12-21
IL214488A (en) 2016-04-21
IL214488A0 (en) 2011-09-27
JP2012518278A (ja) 2012-08-09
JP5570530B2 (ja) 2014-08-13
WO2010093733A2 (en) 2010-08-19
KR20110124303A (ko) 2011-11-16
KR101674698B1 (ko) 2016-11-09
WO2010093733A3 (en) 2010-10-28
SG173586A1 (en) 2011-09-29
CN102396058A (zh) 2012-03-28
EP2396815A4 (en) 2012-11-28

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