CN102396058B - Detecting defects on a wafer - Google Patents
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- CN102396058B CN102396058B CN201080016422.8A CN201080016422A CN102396058B CN 102396058 B CN102396058 B CN 102396058B CN 201080016422 A CN201080016422 A CN 201080016422A CN 102396058 B CN102396058 B CN 102396058B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Methods and systems for detecting defects on a wafer are provided.
Description
priority request
The application requires the U.S. Provisional Application No.61/152 that the title of submission on February 13rd, 2009 is " Methods and Systems for Detecting Defects on a Wafer (for detection of the method and system of the defect on wafer) ", 477 priority, it is merged in way of reference, treats as in this article and is fully set forth.
Background technology
1. skill this area
The present invention relates in general to the defect detecting on wafer.Each output that some embodiment relates in the original output that check system is produced for wafer is assigned to different piece.
2. description of related art
Description below and example rely on its content in this section and are not admitted to be prior art.
The wafer inspection that uses optics or electron beam technology to carry out is a kind of for adjusting the important technology of the productive rate of semiconductor fabrication process, monitoring process variation and raising semi-conductor industry.Along with the size of modern integrated circuits (IC) reduces and the complexity of manufacturing process increases day by day, check and become more and more difficult.
In each procedure of processing that semiconductor wafer is carried out, identical circuit pattern is printed in each tube core (die) on wafer.Most of chip checking systems have utilized this fact and have used relatively simple tube core-tube core (die-to-die) relatively to detect the defect on wafer.Yet the printed circuit in each tube core can comprise many regions of the patterned features (patterned feature) repeating along x or y direction, as, the region of DRAM, SRAM or FLASH.Such region is commonly referred to as array area (remaining region is known as random or logic area).In order to realize better susceptibility, advanced check system adopts Different Strategies to check array area and random or logic area.
In order to create for carrying out the wafer inspection technique of array testing technologies, the same group of parameter that the check system of many current uses needs user's manual creation interest region (ROI) and application is used for defects detection in identical ROI.Yet for a variety of reasons, this creation method is disadvantageous.For example, when design specification is reduced, region limit may be complicated many and area is much smaller.Aspect (stage) accuracy of the objective table in check system and resolution, have limitation, so manual creation ROI will finally become infeasible.On the other hand, if the distance between minute footers (page break) is greater than the degree that Fourier filtering can be carried out, by minute footers not suppressing in array area.
In another approach, by intensity as the feature of dividing, with by the group pixels of approximate intensity together.Then, same group of pixel (based on intensity) applied to same group of parameter.Yet this method also has a plurality of shortcomings.For example, when geometric properties is dispersed, can use the partitioning algorithm based on intensity.Yet this is not enough conventionally.Therefore, need to divide based on other character.
Therefore, will will be advantageous that, and develop the method and system that detects the defect on wafer, it can learn that paid close attention to defect and noise/noise realize better defects detection in different piece geometrically by utilization.
Summary of the invention
The description of various embodiments will be interpreted as to the theme of restriction appended claims never in any form below.
Embodiment relate to a kind of detect defect on wafer by computer implemented method.By computer implemented method, comprise and obtain the original output being produced for wafer by check system.One or more characteristic that is also comprised the original output that identification is corresponding with one or more geometrical property (geometrical characteristic) of the patterned features forming on described wafer by computer implemented method.In addition, one or more characteristic that is comprised the described original output based on identifying by computer implemented method, single output in described original output is assigned to different piece, and it is different making one or more geometrical property of the described patterned features corresponding from each several part in described different piece.In addition, by computer implemented method, comprise one or more defects detection parameter is assigned to separately to described different piece.By computer implemented method, also comprised the described single output that described one or more defects detection parameter of distributing is applied to be assigned to described different piece, detect thus the defect on described wafer.
Above-mentioned each step by computer implemented method can be carried out as further described herein.Above-mentioned any other step (one or more) that can be comprised any other method (one or more) described herein by computer implemented method.Can use any system described herein to carry out above-mentioned by computer implemented method.
Another embodiment relates to a kind of computer-readable medium, and it is included in computer system executable for realizing the program command of the method that detects the defect on wafer.Described method comprises the above-mentioned step by computer implemented method.Computer-readable medium can further be constructed as described herein.Can carry out as further described herein the step of described method.In addition, the method for executable program instructions can comprise any other step (one or more) of any other method (one or more) described herein.
Other embodiments relate to a kind of system that is configured to detect the defect on wafer.Described system comprises inspection subsystem, and it is configured to for wafer, produce original output by scanning described wafer.Described system also comprises computer subsystem, and it is configured to obtain described original output.Computer subsystem is also configured to one or more characteristic of the identification original output corresponding with one or more geometrical property of the patterned features forming on described wafer.In addition, computer subsystem is configured to one or more characteristic of the described original output based on identifying, single output in described original output is assigned to different piece, and it is different making one or more geometrical property of the described patterned features corresponding from each several part in described different piece.Computer subsystem is also configured to one or more defects detection parameter to be assigned to separately described different piece.In addition, computer subsystem is configured to described one or more defects detection parameter of distributing to be applied to be assigned to the described single output of described different piece, detects thus the defect on described wafer.Described system can further be constructed as described herein.
Accompanying drawing explanation
Embodiment below having read and with reference to after accompanying drawing, other objects of the present invention and advantage will become clear, in the accompanying drawings:
Fig. 1 is the block diagram that illustrates an embodiment of computer-readable medium, and this computer-readable medium is included in computer system executable for realizing the program command of one or more method embodiment described herein; And
Fig. 2 is the schematic diagram of end view that illustrates an embodiment of the system that is configured to detect the defect on wafer.
Although the present invention easily forms various modifications and alternative form, its specific embodiments is shown in the drawings and will describe in detail in this article in the mode of embodiment.Yet, should be appreciated that, accompanying drawing and its specific descriptions are not intended to limit the invention to disclosed concrete form, but on the contrary, the present invention is intended to contain all modifications, equivalents and the alternative form falling in the spirit and scope of the present invention that limit as appended claims.
Embodiment
Although embodiment is described for wafer in this article, but be appreciated that these embodiments can for detection of another sample (as, mask (reticle)) defect on, this mask also can be known as mask (mask) or photomask (photomask) conventionally.Be known in the art many dissimilar masks, and term " mask ", " mask " and " photomask " are intended to contain all types of mask known in the art as used herein.
Embodiment relate to for detection of the defect on wafer by computer implemented method.By computer implemented method, comprise and obtain the original output that check system produces for wafer.Can use check system to carry out and obtain the step for the original output of wafer.For example, the step of obtaining original output can comprise uses check system scan light above wafer, and produces original output in response to the light from wafer scattering and/or reflection that scan period is detected by check system.In this way, the step of obtaining original output can comprise scanning wafer.Yet obtaining original output is not necessarily to comprise scanning wafer.For example, the step of obtaining original output for example can comprise, from wherein having stored in the storage medium of original output (, being stored by check system) obtains original output.Can adopt any suitable method to carry out and obtain the step of original output from storage medium, and the storage medium that therefrom obtains output can comprise any storage medium described herein.Under any circumstance, described method comprises original output (for example, initial data) collection.
In one embodiment, original output is in response to the light from wafer scattering.Particularly, original output can be in response to from wafer scattering and the light that detected by check system.Alternatively, original output can be in response to the light that reflects and detected by check system from wafer.Original output can comprise any suitable original output and can be according to the structure of check system and different.For example, original output can comprise signal, data, view data etc.In addition, original output for example can be generally defined as check system, for the output of at least a portion (, a plurality of pixels) in the integral body output of wafer generation.In addition, all original outputs that original output can comprise all original output that check system produces for whole wafer, all original output producing for the whole part that is examined system scan in wafer, produced wafer by an access needle of check system etc., and whether irrelevant corresponding to the defect on wafer with original output.
By contrast, single output can be generally defined as the output of the single pixel in the integral body output being produced for wafer by check system.Therefore, original output can comprise a plurality of single output.In other words, single output can be the output producing separately for the diverse location on wafer.For example, single output can comprise the single discrete output producing for the diverse location on wafer.Particularly, diverse location can be corresponding to the difference on wafer " checkpoint ".In other words, diverse location can be corresponding to the position of separately its generation being exported by check system on wafer.In this way, diverse location can, corresponding to each position on wafer, be carried out " measurement " by check system in these positions.So, diverse location can for example, according to the structure of check system (, check system produces the mode of output for wafer) and different.Single output comprises the single output corresponding or not corresponding with defect on wafer.
Can construct as described herein check system.For example, can construct check system for details in a play not acted out on stage, but told through dialogues (DF) inspection of wafer.In this way, check system can comprise DF check system.Can construct as further described herein DF check system.In another embodiment, can construct check system for bright field (BF) inspection of wafer.In this way, check system can comprise BF check system.BF check system can have any suitable constructions known in the art.Can also check to construct check system for BF and DF.In addition, check system can be constructed to ESEM (SEM) and check and auditing system, and this check system can have any suitable constructions known in the art.In addition, can construct check system, patterned wafers is checked and may check non-patterned wafer.
One or more characteristic that is also comprised the original output that identification is corresponding with one or more geometrical property of the patterned features forming on wafer by computer implemented method.In one embodiment, one or more characteristic of the original output identifying comprises the interior projection along each row of original output.Projection can be generally defined as group or the set of the single output in original output with certain pattern.For example, can assemble (gather) original output along the projection of horizontal line and vertical row.In this way, can identify and limit or corresponding to x and y projection in the original output of one or more geometrical property of patterned features.So, the step of identifying one or more characteristic of original output can comprise carries out two dimension (2D) projection to original output.Yet one or more characteristic of the original output corresponding with one or more geometrical property that is formed on the patterned features on wafer can comprise any other characteristic (one or more) of original output.Can use any suitable method and/or algorithm, carry out in any suitable manner the step of one or more characteristic identify as described above original output.
In one embodiment, one or more geometrical property of patterned features comprises the mathematical computations of geometry of edge, shape, texture, limiting pattern feature or their certain combination.For example, can comprise any mathematical computations/conversion of edge, shape, texture, restriction geometry or their certain combination for divide the characteristic of (can carry out as further described herein) based on geometry.Although all patterned features that form on wafer may have certain roughness and therefore have certain " texture ", but the difference of texture and roughness is, roughness is generally used for just representing and describing the roughness on patterned features periphery, and the whole texture of texture ordinary representation patterned features (for example,, according to design or not according to design).Can be Fourier filtering algorithm for an embodiment of the mathematical computations/conversion of the geometry of limiting pattern feature, it can be for describing the relation between geometry and light scattering.For example, Fourier filtering algorithm can be for predicting in original output the projection of one or more geometrical property corresponding to patterned features.
In one embodiment, how the layout based on patterned features will affect one or more characteristic of original output, carries out the step of one or more characteristic of the original output of identification.For example, can be layout for dividing the characteristic of (can carry out as described herein).Particularly, layout can be for one or more geometrical property of the patterned features in identification layout.Then, can determine that (for example,, rule of thumb, according to theory etc.) for example, by one or more characteristic (, projection) of original output corresponding to one or more geometrical property with identifying.In this way, can determine one or more characteristic of the original output of the expectation corresponding with one or more geometrical property of patterned features.Then, can in any suitable manner one or more feature of one or more characteristic of described expectation and original output be compared, to identify one or more characteristic of the original output corresponding with one or more geometrical property of patterned features.The layout using in this step can obtain in any suitable way and can have any suitable form.
In another embodiment, when the step of original output is obtained in execution, carry out the step of one or more characteristic of the original output of identification.In this way, when check system just scans wafer, can carry out by immediate mode (on-the-fly) step of one or more characteristic of the original output of identification.For example, can use the original output of the reference of wafer to carry out the step of one or more characteristic of the original output of identification, the original output of described reference will compare to detect the defect on wafer with original output and be for wafer, to obtain with in swash width (pass) once with original output.With reference to original output, can comprise any reference value described herein.So, can also obtain between the original period of output of wafer, by immediate mode, carry out other steps described herein (for example, dividing), described other steps are to use one or more characteristic of the original output identifying to carry out.
By computer implemented method, also comprised: one or more characteristic of the original output based on identifying, single output in original output is assigned to different piece, and it is different making one or more geometrical property of the patterned features corresponding from each several part in different piece.In this way, for the division based on geometry, construct embodiment described herein.More specifically, embodiment described herein utilizes (one or more) geometrical property (for example, shape) of wafer pattern how to affect original output and how the pattern that affects differently original output to be divided into different piece.In other words, embodiment described herein utilizes (one or more) geometrical property (for example, shape) of pattern on wafer how to affect original output so that the single output in original output is divided into different piece.For example, the patterned features with one or more different geometrical properties can produce Different Effects to the light from wafer scattering, and can produce Different Effects to the original output producing for wafer thus.By embodiment described herein, described patterned features can be divided into different piece effectively.Can use any suitable method and/or algorithm, carry out and as described herein the single output in original output is assigned to the step of different piece in any suitable manner.
" part " can be generally defined as the different piece in the gamut of probable value of single output.The value of different qualities that can be based on single output limits these parts, and this depends on the defects detection algorithm that uses these parts.For example, in Multi-core automatic threshold (MDAT) algorithm, for limiting the value of feature of the single output of these parts, can comprise intermediate intensity value.In a this exemplary and nonrestrictive embodiment, if the gamut of intermediate intensity value is from 0 to 255, first can comprise that from 0 to 100 intermediate intensity value and second portion can comprise from 101 to 255 intermediate intensity value.In this way, first corresponding in original output compared with dark areas, and second portion corresponding in original output compared with bright area.In some cases, can use a wafer to limit these parts, and for thering is the wafer of approximate geometry with a described wafer, can use these predetermined parts.
In one embodiment, automatically carry out one or more characteristic of identifying original output and the step that single output is assigned to different piece, and input without user.For example, (one or more) geometrical property (for example, shape) and projection that embodiment described herein can be utilized pattern on wafer, come automatically the single output in original output to be divided into different piece.In this way, from comprise manual creation interest region (ROI) and in identical ROI application different for the method for same group of parameter of defects detection, when design specification is reduced and when the zones of different on the wafer being divided is diminished, use embodiment described herein, partiting step will not become more complicated.In addition, different from manual methods, automatically identify one or more characteristic of original output and single output is assigned to different piece and without the step of user input, is not subject to the impact of check system objective table precision and resolution limit.Therefore, use embodiment described herein to divide, check system objective table precision and resolution limit will can not make partiting step become infeasible.
In another embodiment, do not consider the design data that is associated with patterned features, carry out the step that single output is assigned to different piece.For example, although can determine one or more characteristic of the original output of the expectation corresponding with one or more geometrical property of patterned features with layout as mentioned above, based on design data itself, do not carry out partiting step.In other words, partiting step is how one or more geometrical property based on patterned features will affect original output, rather than one or more geometrical property based on patterned features itself.In this way, additive method and the system of dividing original output from the design data being associated based on patterned features are different, by one or more geometrical property based on patterned features, will how to affect original output and carry out partiting step, can cause from different designs data, different Electricity Functional, different electrical characteristics, use the patterned features that the different critical state etc. of the performance of the device that patterned features forms is associated to be assigned to a part, prerequisite is that these patterned features will affect original output in the same manner.For example, for example, by based on (one or more) geometrical property by (one or more) characteristic that how to affect original output (, intensity) geometry but not based on itself is carried out partiting step, the patterned features that can cause producing remarkable noise in original output is assigned to a part without the design data of considering to be associated with these patterned features, and can cause producing in original output that other patterned features that can ignore noise are assigned to different piece again and the design data that is associated with these other patterned features without consideration.In this way, the patterned features of strong noise can be divided into together, and low noise patterned features can be divided into together.
In other embodiments, do not consider the intensity of single output, carry out the step that single output is assigned to different piece.In other words, although one or more characteristic of the original output based on identifying is carried out partiting step, but the intensity based on single output itself is carried out partiting step, the intensity of a plurality of single outputs that described one or more characteristic can be based in original output is identified.For example, the projection along each row in original output can comprise the single output that has diversity and may have remarkable varying strength.But all single output can be corresponding to one or more identical geometrical property of the patterned features such as minute footers.So, corresponding to all single output of one or more identical geometrical property of patterned features, can be assigned to a part, even all single output can have significantly different intensity.In this way, the method for carrying out partiting step from the intensity based on single pixel is different, and the partiting step of carrying out by embodiment described herein will not be subject to the impact of the non-uniform scattering of patterned features.
In some embodiments, the step that single output is assigned to different piece comprises: analyze one or more characteristic of the original output identifying and by threshold application to this single output.For example, as mentioned above, along the horizontal line in original output and the projection of vertical row, can be aggregated.Then, can analyze these projections, and threshold value can be set, the single output in original output is divided into the zones of different (part) of being paid close attention to.One or more characteristic of the original output identifying by analysis and by threshold application in single output, can reduce the quantity of the single output corresponding with borderline region that is assigned to improperly these parts.
In one embodiment, one or more geometrical property corresponding with in different piece one part comprises one or more geometrical property of minute footers, and one or more geometrical property corresponding with another part in different piece comprises one or more geometrical property of array area.The die area of dividing in the art, the basic continous region that footers is generally defined as separate physical memory.Each continuum of physical storage can be known as page frame (page frame) conventionally.By carrying out as described herein partiting step, one or more characteristic of the original output of the geometry of minute footers in restriction array area (for example, x and/or y projection) can be identified, and for the single output corresponding with minute footers being assigned to a part and will being assigned to different piece with single output corresponding to array area.
In another embodiment, one or more characteristic of the original output corresponding with one or more geometric properties of some patterned features can not suppress by Fourier filtering.For example, different from the certain methods of carrying out partiting step, even if the distance between minute footers is greater than the distance that can carry out Fourier filtering, also can suppress minute footers in array area.In such embodiment, for some check system, if the interval that the width of minute footers is approximately between 5 μ m and minute footers is approximately 5 μ m, Fourier filtering becomes unrealistic (if not infeasible) and the manual creation of ROI also becomes unrealistic (if not infeasible).Therefore, the signal (noise) producing in original output due to minute footers possibly cannot be inhibited, and therefore can reduce the defects detection susceptibility that can use original output to realize.Yet, use embodiment described herein, can be (for example, projection based in original output) the identification single output corresponding with minute footers, and the single output corresponding with minute footers can be assigned to a part and other single output can be assigned to other parts, make can detect the defect in different piece with varying sensitivity as further described herein.
By computer implemented method, also comprise one or more defects detection parameter is assigned to separately to different piece.Can separately one or more defects detection parametric distribution be arrived to all different pieces.Therefore, certain single output can not be left in the basket during for defects detection when it.On the contrary, can detect some defect with the single output that is assigned to all different pieces.In other words, can detect defect by all parts of original output.In this way, can adopt different inspection schemes, process by different way different piece.The difference of different inspection schemes can be the defects detection algorithm that is assigned to different piece.Alternatively, the difference of different inspection schemes can be one or more parameter that is assigned to the same defects detection algorithm of different piece.Be assigned to the defects detection algorithm that different piece or its one or more parameter be assigned to different piece and can comprise any suitable defects detection algorithm.For example, defects detection algorithm can be segmentation automatic threshold (SAT) algorithm or MDAT algorithm.In fact this defects detection algorithm can be suitable for BF and detect.Yet defects detection algorithm can be to be suitable for the defects detection algorithm that DF checks.For example, defects detection algorithm can be FAST algorithm or HLAT algorithm.
The difference of different inspection schemes can also be for obtaining one or more optical parametric of check system of the original output of wafer.For example, in multiple-pass checks, can be with at least one optical parametric of check system (for example, polarization, wavelength, irradiating angle, laser angle etc.) different value carry out different strokes, and the original output producing in different strokes can be for detection of the defect in wafer zones of different, in described zones of different, form the patterned features with one or more different geometrical properties.In this way, can use the original output producing in the different strokes of the multiple-pass inspection of using one or more different optical parameter to carry out, check the wafer area that comprises the patterned features with one or more different geometrical properties.
In one embodiment, one or more defects detection parameter comprises and will be applied to the threshold value of difference between single output and reference value.In this way, according to the part that is assigned with single output, can be by different threshold application the difference between single output and reference value.For example, deduct reference value (as, 8 reference pictures) in can the single output from original output (as, 8 bit test images), and which part what do not consider to be assigned with single output is.Reference value can comprise any suitable reference value, as, single output that unit on the single output that tube core on the wafer different from the tube core that has wherein produced the single output that is subtracted reference value is corresponding, the wafer different with the unit (cell) that has wherein produced the single output that is subtracted reference value is corresponding etc.Any single output having higher than the difference of allocation threshold can be identified as to defect.In this way, can be according to the part that is assigned with single output, with different threshold test defects.
In another embodiment, carry out the step that one or more defects detection parameter is assigned to separately to different piece, make with the single output that is assigned to different piece, to detect defect with varying sensitivity.Therefore, embodiment described herein can learn that paid close attention to defect (DOI) and noise/noise realize better defects detection in different piece geometrically by utilization.For example, different geometries can show dissimilar defect.In such embodiment, in array pattern region, original output can comprise the linear pattern that relatively bright single output replaces with relative dark single output.Under some such situations, DOI can be arranged in those parts that original output comprises relatively bright single output, and noise defect can be arranged in those parts that original output comprises relatively dark single output.In this way, (for example adopt (one or more) characteristic of use restriction geometry, x or the y projection of minute footers in array area) part, the susceptibility of detection algorithm can create differently, so that susceptibility in array area is better and make the noise of self page-dividing sign less.Therefore, embodiment described herein advantageously allows to adopt automated manner that the different geometrical patterns of wafer are divided into different piece.This partiting step makes it possible to process by different way these regions and can reach better susceptibility.Different geometries is also by light scattering by different way.In this way, some geometries can cause original output to have relatively many noises, and other solids can cause original output to have relatively few noise.Yet, by only using the intensity of single output to divide, together with the single output corresponding with the region with relative many noises and noise relatively less in original output can be grouped in (for example,, because border limits unclear).By contrast, in embodiment described herein, the defect for being arranged in the wafer area with one or more geometrical property corresponding with the less noise of original output, can reach higher susceptibility.In addition, for arrowband check system, due to the pattern a large amount of light of scattering also, so defect conventionally can be by noise takeover.Yet embodiment described herein makes to detect those defects by lack of proper care near the noise of pattern (detune).
By computer implemented method, also comprised the single output that one or more defects detection parameter of distributing is applied to be assigned to different piece, to detect thus the defect on wafer.As mentioned above, can adopt different inspection schemes, process by different way different piece.In this way, the step that one or more defects detection parameter of distributing is applied to single output can comprise that employing different schemes checks these parts, to detect thus the defect on wafer.For example, the part that has been assigned with single output can be for definite threshold, and this threshold value is by the difference being applied between single output and reference value.Determined be assigned with the part of single output and by one or more defects detection parametric distribution after different piece, as originally will normally carried out, one or more defects detection parameter of distribution can be applied to being assigned to the single output of different piece.
In one embodiment, in a stroke of the multiple-pass inspection of wafer, carry out the step of obtaining original output, and the original output of obtaining in another stroke for multiple-pass inspection, do not carry out by computer implemented method.In this way, can only to multiple-pass inspection stroke, carry out partiting step as described herein.The original output of obtaining in other strokes can be for other objects.For example, multiple-pass inspection can be for dividing object, and one of them stroke has for the optimum signal of defect and another stroke provides the division based on geometry.Particularly, can carry out the different stroke inspections in multiple-pass inspection with one or more different defects detection parameter and/or one or more different optical parametric, make for different strokes, original output and/or defects detection result are different.In such embodiment, a kind of optical mode for a stroke inspection of multiple-pass inspection can allow to divide, and the another kind of optical mode of the check system checking for another road of multiple-pass inspection can provide the high sensitive to DOI.
In another embodiment, with the original output of obtaining in other strokes, detect additional defects, and described method comprises by described defect and additional defects combination, to produce the check result to wafer.For example, as described above, the stroke that multiple-pass checks can be for partiting step, and another stroke that multiple-pass checks can be for Optimum signal detection DOI.Therefore, the different strokes of multiple-pass can detect dissimilar defect.In this way, can combine the result of the different strokes of multiple-pass, to produce the whole check result to wafer.After the defects detection of the original output that can produce has been performed, be combined and used in the defect result that the original output detections that obtains in different strokes arrives in using all different strokes.Alternatively, can by immediate mode, be combined and used in the defects detection result of the original output generation of obtaining in different strokes, at the same time, certain original output is still acquired.
In other embodiments, described method comprises one or more predetermined defects detection parameter is applied to original output to detect the additional defects on wafer and described defect and additional defects are combined to produce the check result to wafer.For example, can from the original output single output of (as, 8 bit test images), deduct reference value (as, 8 reference pictures), and which part what do not consider to be assigned with single output is.Reference value can comprise any suitable reference value, those reference values described above.In addition, by one or more defects detection parameter of distributing being applied to single output and by one or more predetermined defects detection parameter is applied to original output, can be by identical reference value for detection of defect.The result of subtraction can be absolute difference.Then, predetermined direct difference threshold can be applied to absolute difference, and absolute difference can be identified as defect higher than any single output of threshold value.In addition, identical predetermined direct difference threshold can be applied to absolute difference, and which part what do not consider to be assigned with single output is.Then, can by the defect detecting in this way with by one or more defects detection parameter of distributing being applied to the defect that single output detects, combine, to produce the final inspection result to wafer.For example, can produce individually defect template for all defect detecting by any way.Can be from two error images (difference image) execution area " growth (grow) " all, and can produce the final template for all defect.
By detecting by different way as mentioned above defect, can provide for a variety of reasons and may favourable defect detect again.For example, automatically 2D projection and the division based on geometry provides sane (robust) defect to detect again and it is easy to use that defect is detected again.In addition, partiting step described herein provides the dynamical fashion of mapping defect and reference picture.For example, if this part has noise, can demodulation difference.By contrast, if this part is cleaner, can amplified differences.In addition, double check as above has reduced the possibility of the fault warning being caused by any detection method.
Described method can also comprise the result of any step (one or more) of described method is stored in storage medium.These results can comprise any result described herein and can adopt any mode known in the art to store.For example, one or more that is assigned with the part of single output and/or is assigned to different piece detects defect parameters can be for generated data structure, and as, question blank, it is stored in the storage medium with check system coupling.Storage medium can comprise any suitable storage medium known in the art.After store results, can be in storage medium access results, and use as described herein result, formatd to be presented in user, for another software module, method or system etc.In addition, store results can be " for good and all ", " semipermanent ground ", store or continue certain a period of time provisionally.For example, storage medium can be random access memory (RAM), and these the possibility of result needn't continue to remain in storage medium Infinite Time.Can also be if the people such as Bhaskar be in the U.S. Patent application No.12/234 owning together of submission on September 19th, 2008,201 (are disclosed as U.S. Patent Application Publication No.2009/0080759 on March 26th, 2009, it is merged in way of reference, treats as herein and is fully set forth) described in carry out the step of store results.
Forward now accompanying drawing to, attention, these accompanying drawings needn't be drawn in proportion.Particularly, in accompanying drawing, the ratio of some elements is exaggerated very much, to emphasize the feature of element.Also note, these accompanying drawings are not drawn by same ratio.Use identical Reference numeral to be illustrated in and may there is the element shown in an approximate more than secondary accompanying drawing of constructing.
Another embodiment relates to a kind of computer-readable medium, and it is included in computer system executable for realizing the program command of the method (that is, by computer implemented method) that detects the defect on wafer.Such embodiment shown in Figure 1.For example, as shown in fig. 1, computer-readable medium 10 is included in computer system 14 executable for realizing the program command 12 of the method for the defect on above-mentioned detection wafer.Can execution of program instructions by computer implemented method, can comprise any other step (one or more) in any other method (one or more) described herein.
The program command 12 of realizing the method for all methods and so on as described herein can be stored on computer-readable medium 10.Computer-readable medium can be storage medium, as, read-only memory, RAM, disk or CD or tape or any other suitable computer-readable medium known in the art.
Can realize program command by any mode in variety of way, except other, also comprise technology, the technology based on assembly and/or OO technology based on program.For example, as required, can use Matlab, Visual Basic, ActiveX control, C, C++ object, C#, JavaBeans, Microsoft Foundation Classes (" MFC ") or other technologies or method to realize program command.
Computer system 14 can be taked various forms, comprises personal computer system, large computer system, work station, component computer, image computer, programmable graphics computer, parallel processor or any other device known in the art.Generally speaking, term " computer system " can be broadly defined as contains any device with one or more processor, and it carries out the instruction from storage medium.
Other embodiments relate to the system that is configured to detect the defect on wafer.An embodiment of this system shown in Figure 2.As shown in Figure 2, system 16 comprises inspection subsystem 18 and computer subsystem 20.Check that subsystem is configured to for wafer, produce original output by scanning wafer.For example, as shown in Figure 2, check that subsystem comprises light source 22, as, laser.Light source 22 is configured to photoconduction to polarization components 24.In addition, check that subsystem can comprise a more than polarization components (not shown), each polarization components can be separately located in the light path from light source.Each polarization components can be configured to change by different way the polarisation of light from light source.Check that subsystem can be configured to: according to that polarization setting, be selected for scan period irradiate wafer, with any suitable method, polarization components moved into or be shifted out the light path from light source.The polarization setting that scan period is used for irradiate wafer can comprise p polarization (P), s polarization (S) or circular polarization (C).
The light that penetrates polarization components 24 is directed to wafer 26 with oblique incident angle, and described oblique incident angle can comprise any suitable oblique incident angle.Check that subsystem can also comprise one or more optical module (not shown), described optical module be configured to by light from light source 22 guiding polarization components 24 or by light from polarization components 24 guiding wafers 26.Optical module can comprise any suitable optical module known in the art, as (but being not limited to) anacamptics assembly.In addition, light source, polarization components and/or one or more optical module for example can be configured to light, with one or more incidence angle (, the incidence angle of oblique incident angle and/or perpendicular) guiding wafer.Check that subsystem can be configured to by carrying out scanning step with any suitable method scan light above wafer.
In scan period, from the light of wafer 26 scatterings, can be examined a plurality of passages collections of subsystem and detect.For example, with relatively subvertical angle, from the light of wafer 26 scatterings, can be collected by lens 28.Lens 28 can comprise refraction optical element as shown in Figure 2.In addition, lens 28 can comprise one or more refraction optical element and/or one or more reflective optical devices.The light of being collected by lens 28 can be directed to polarization components 30, and polarization components 30 can comprise any suitable polarization components known in the art.In addition, check that subsystem can comprise a more than polarization components (not shown), each polarization components can independently be arranged in the path of the collected light of lens.Each polarization components can be configured to change by different way the collected polarisation of light of lens.Check that subsystem can be configured to: according to which kind of polarization setting, be selected for scan period by detecting the collected light of lens 28, with any suitable method, the path that polarization components is moved into or shifts out the collected light of lens.For example, for detecting and can comprise any polarization setting described herein (, P, S and unpolarized (N)) by the collected polarisation of light setting of lens 28 in scan period.
The light that penetrates polarization components 30 is directed to detector 32.Detector 32 can comprise any suitable detector known in the art, as, the imaging detector of charge coupled device (CCD) or another type.Detector 32 is configured to produce original output, and described output is in response to the scattered light of being collected by lens 28 and being transmitted by polarization components 30 (if being arranged in the path of collected light).Therefore, lens 28, polarization components 30 (if being arranged in the path of the collected light of lens 28) and detector 32 form a passage that checks subsystem.This passage that checks subsystem can comprise any other suitable optical module (not shown) known in the art, as Fourier filtering assembly.
With different angles, from the light of wafer 26 scatterings, can be collected by lens 34.Lens 34 can be constructed as described above.The light of being collected by lens 34 can be directed to polarization components 36, and polarization components 36 can comprise any suitable polarization components known in the art.In addition, check that subsystem can comprise a more than polarization components (not shown), each polarization components can independently be arranged in the path of the collected light of lens.Each polarization components can be configured to change by different way the collected polarisation of light of lens.Check that subsystem can be configured to according to which kind of polarization setting be selected for detecting the collected light of lens 34 in scan period, the path that polarization components is moved into or shifts out the collected light of lens.For detecting the collected polarisation of light setting of lens 34 in scan period, can comprise P, S or N.
The light that penetrates polarization components 36 is directed to detector 38, and detector 38 can be constructed as described above.Detector 38 is also configured to produce output, and described output is in response to the scattered light being collected through polarization components 36 (if being arranged in the path of scattered light).Therefore, lens 34, polarization components 36 (if being arranged in the path of the collected light of lens 34) and detector 38 can form another passage that checks subsystem.This passage also can comprise any other above-mentioned optical module (not shown).In some embodiments, lens 34 can be configured to collect with approximately 20 degree the light to approximately 70 polar angles of spending from wafer scattering.In addition, lens 34 can be constructed to anacamptics assembly (not shown), and described anacamptics assembly is configured to collect the light from wafer scattering with the azimuth of approximately 360 degree.
Inspection subsystem shown in Fig. 2 can also comprise one or more other passage (not shown).For example, check that subsystem can comprise that additional channels is as wing passage, this additional channels can comprise any optical module described herein, as lens, one or more polarization components and detector.Described lens, one or more polarization components and detector can also be constructed as described herein.In a kind of such embodiment, wing passage can be configured to collect and detect the light (for example, wing passage can comprise the lens that are centered close in the plane that is basically perpendicular to the plane of incidence and the detector that is configured to detect the collected light of lens) scattering from the plane of incidence.
If the inspection of wafer is comprised to a more than stroke,, between stroke, check that the value of any optical parametric (one or more) of subsystem can be changed by any suitable method as required.For example, in order to change the irradiation polarization state between stroke, can remove polarization components 24 and/or replace as described herein polarization components 24 with different polarization components.In another embodiment, in order to change the illumination angle between stroke, can be with any suitable method, between stroke, change light source and/or for for example, the position to any other optical module (, polarization components 24) of wafer by photoconduction.
Computer subsystem 20 is configured to obtain the original output that checks that subsystem produces.The original output being produced by detector in scan period can be provided to computer subsystem 20.Particularly, computer subsystem (for example can be coupled to each detector, by one or more transmission medium shown in dotted lines in Figure 2, described transmission medium can comprise any suitable transmission medium known in the art), make computer subsystem can receive the original output that detector produces.Computer subsystem can be coupled to each detector in any suitable manner.The original output being produced by detector during scanning wafer can comprise any original output described herein.
Computer subsystem is configured to according to one or more characteristic of any embodiment identification described herein original output corresponding with one or more geometrical property of the patterned features forming on wafer.One or more characteristic of original output can comprise any such characteristic described herein.One or more geometrical property can also comprise any such characteristic described herein.Patterned features can comprise any patterned features described herein.
In addition, one or more characteristic that computer subsystem is configured to the original output based on identifying is assigned to different piece by each output in original output, makes one or more geometrical property of the patterned features corresponding from each several part in different piece different.Computer subsystem can be configured to, according to any embodiment described herein, single output is assigned to different piece.Single output can comprise any single output described herein.Different piece can be constructed as described herein.One or more characteristic of the original output identifying can comprise any such characteristic described herein.
Computer subsystem is also configured to, according to any embodiment described herein, one or more defects detection parameter is assigned to separately to different piece.This one or more defects detection parameter can comprise any defects detection parameter described herein.Computer subsystem is also configured to one or more defects detection parameter of distributing to be applied to be assigned to the single output of different piece, and to detect thus the defect on wafer, this can carry out according to any embodiment described herein.One or more defects detection parameter of distributing can comprise any such parameter described herein.
Computer subsystem can be configured to carry out any other step (one or more) of any method embodiment described herein (one or more).Computer subsystem, inspection subsystem and system can further be constructed as described herein.
Note, Fig. 2 provided herein always illustrates a structure of the inspection subsystem that can comprise in system implementation plan described herein.The Performance optimization of subsystem when normally carrying out significantly, when designer is used check system, can change inspection subsystem structure described herein, will be checked.In addition, can use existing check system (for example,, by adding function described herein to existing check system) Puma 90 xx, 91xx as commercially available in the KLA-Tencor from California seedling Bi Dasi and the instrument of 93xx series to realize system described herein.For some such systems, method described herein can be provided as the optional function of system (for example, the function except other functions of system).Alternatively, system described herein can be designed to " (from scratch) starts anew " so that brand-new system to be provided.
Based on this, describe, the other modification of the various aspects of the present invention and alternative embodiment can be clearly for a person skilled in the art.For example, provide the system and method for detection of the defect on wafer.Therefore, this is described and will be understood to be illustrative and its object is to instruct those skilled in the art to realize general mode of the present invention.Be appreciated that the form of the present invention that illustrates and describe will be taken as at present preferred embodiment herein.Element and material can substitute shown element and material with describing herein, parts and technique can be put upside down, and can utilize separately some feature of the present invention, after those skilled in the art benefits from this description of the present invention, all these will be apparent.Can in the situation that do not depart from the spirit and scope of the present invention of describing as following claims, key element described herein be changed.
Claims (19)
1. a computer implemented method, described method is used for detecting the defect on wafer, and described method comprises:
Obtain the original output being produced for wafer by check system;
Identify one or more characteristic of the described original output corresponding with one or more geometrical property of the patterned features forming on described wafer;
One or more characteristic of described original output based on identifying, single output in described original output is assigned to different piece, and it is different making one or more geometrical property of the described patterned features corresponding from each several part in described different piece;
One or more defects detection parameter is assigned to separately to described different piece; And
Described one or more defects detection parameter of distributing is applied to be assigned to the described single output of described different piece, detects thus the defect on described wafer.
2. method according to claim 1, wherein, described original output is in response to the light from described wafer scattering.
3. method according to claim 1, wherein, one or more characteristic of the described original output identifying comprises in described original output the projection along each row.
4. method according to claim 1, wherein, one or more geometrical property of described patterned features comprises the mathematical computations of geometry of edge, shape, texture, the described patterned features of restriction or their certain combination.
5. method according to claim 1, wherein, how the layout based on described patterned features will affect one or more characteristic of described original output, carries out the step of described identification.
6. method according to claim 1, wherein, in the step of obtaining described in carrying out, carries out the step of described identification.
7. method according to claim 1, wherein, automatically carries out the step of described identification and the step of the described single output of described distribution, and inputs without user.
8. method according to claim 1, wherein, in the situation that do not consider the design data relevant to described patterned features, carries out the step of the described single output of described distribution.
9. method according to claim 1, wherein, in the situation that do not consider the intensity of described single output, carries out the step of the described single output of described distribution.
10. method according to claim 1, wherein, the step of the described single output of described distribution comprise analyze one or more characteristic of the described original output identifying and by threshold application to described single output.
11. methods according to claim 1, wherein, described one or more geometrical property corresponding with in described different piece one part comprises one or more geometrical property of minute footers, and wherein, described one or more geometrical property corresponding with another part in described different piece comprises one or more geometrical property of array area.
12. methods according to claim 1, wherein, one or more characteristic of the described original output corresponding with one or more geometrical property of patterned features described in some can not suppress by Fourier filtering.
13. methods according to claim 1, wherein, described one or more defects detection parameters comprise threshold value, described threshold value is by the difference being applied between described single output and reference value.
14. methods according to claim 1, wherein, carry out the described step that described one or more defects detection parameter is distributed separately, make with the described single output that is assigned to described different piece, to detect defect with varying sensitivity.
15. methods according to claim 1, wherein, the step of obtaining described in carrying out in the one stroke of the multiple-pass inspection of described wafer, and wherein, the original output of obtaining in another stroke for described multiple-pass inspection, does not carry out described by computer implemented method.
16. methods according to claim 1, wherein, the step of obtaining described in carrying out in the one stroke of the multiple-pass inspection of described wafer, wherein, the original output of obtaining in another stroke for described multiple-pass inspection, does not carry out described by computer implemented method, wherein, with the described original output of obtaining in other strokes, detect additional defects, and wherein, described method also comprises described defect and described additional defects is combined to produce the check result to described wafer.
17. methods according to claim 1, also comprise: one or more predetermined defects detection parameter is applied to described original output to detect the additional defects on described wafer, and described defect and described additional defects are combined to produce the check result to described wafer.
18. 1 kinds of equipment for detection of the defect on wafer, wherein, described equipment comprises:
For obtaining the device of the original output being produced for wafer by check system;
For identifying the device of one or more characteristic of the original output corresponding with one or more geometrical property of the patterned features forming on described wafer;
One or more characteristic for the described original output based on identifying, single output in described original output is assigned to different piece, and one or more geometrical property that makes the described patterned features corresponding from each several part in described different piece is different device;
For one or more defects detection parameter being assigned to separately to the device of described different piece; And
For described one or more defects detection parameter of distributing being applied to be assigned to the described single output of described different piece, detect thus the device of the defect on described wafer.
19. 1 kinds of systems, described system is configured to detect the defect on wafer, and described system comprises:
Check subsystem, described inspection subsystem is configured to for wafer, produce original output by scanning described wafer; And
Computer subsystem, described computer subsystem is configured to:
Obtain described original output;
Identify one or more characteristic of the described original output corresponding with one or more geometrical property of the patterned features forming on described wafer;
One or more characteristic of described original output based on identifying, single output in described original output is assigned to different piece, and it is different making one or more geometrical property of the described patterned features corresponding from each several part in described different piece;
One or more defects detection parameter is assigned to separately to described different piece; And
Described one or more defects detection parameter of distributing is applied to be assigned to the described single output of described different piece, detects thus the defect on described wafer.
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| KR20110124303A (en) | 2011-11-16 |
| WO2010093733A2 (en) | 2010-08-19 |
| IL214488A0 (en) | 2011-09-27 |
| SG173586A1 (en) | 2011-09-29 |
| EP2396815A4 (en) | 2012-11-28 |
| IL214488A (en) | 2016-04-21 |
| EP2396815A2 (en) | 2011-12-21 |
| JP2012518278A (en) | 2012-08-09 |
| CN102396058A (en) | 2012-03-28 |
| WO2010093733A3 (en) | 2010-10-28 |
| KR101674698B1 (en) | 2016-11-09 |
| JP5570530B2 (en) | 2014-08-13 |
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