CN102390607B - 具备防静电功能的电子元件包装用包装材料及其制造方法 - Google Patents

具备防静电功能的电子元件包装用包装材料及其制造方法 Download PDF

Info

Publication number
CN102390607B
CN102390607B CN201110181349.6A CN201110181349A CN102390607B CN 102390607 B CN102390607 B CN 102390607B CN 201110181349 A CN201110181349 A CN 201110181349A CN 102390607 B CN102390607 B CN 102390607B
Authority
CN
China
Prior art keywords
diamond
evaporation
film
electrostatic
proof function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110181349.6A
Other languages
English (en)
Other versions
CN102390607A (zh
Inventor
全永夏
刘载武
吕基浩
文钟哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
J&L Tech CO Ltd
Original Assignee
J&L Tech CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by J&L Tech CO Ltd filed Critical J&L Tech CO Ltd
Priority to CN201510073349.2A priority Critical patent/CN104723625B/zh
Publication of CN102390607A publication Critical patent/CN102390607A/zh
Application granted granted Critical
Publication of CN102390607B publication Critical patent/CN102390607B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/06—Coating with compositions not containing macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/044—Forming conductive coatings; Forming coatings having anti-static properties
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)

Abstract

本发明涉及一种具有防静电功能的包装材料，提供一种用与现有的涂覆表面活性剂或者金属物质而制造的、具有防静电功能的包装材料完全不相同的材料和方式制造的新型的具有防静电功能的包装材料。本发明提供如下的新型的具有防静电功能的包装材料：在高分子薄膜上蒸镀DLC(Diamond？like？carbon)薄膜，从而具有优良的静电耗散性，同时对高分子薄膜的粘贴力良好，从而能够得到半永久性的防静电功能。并且，本发明提供能够对热敏感的高分子薄膜蒸镀DLC(Diamond？like？carbon)薄膜的磁性增强离子枪蒸镀装置以及生产率优秀的卷对卷装置。

Description

具备防静电功能的电子元件包装用包装材料及其制造方法
技术领域
本发明涉及一种具备防静电功能的包装材料，尤其涉及一种利用新的物质来制造具备防静电功能的包装材料的新技术。 
背景技术
具有防静电功能的包装材料作为用于保护对静电非常脆弱的半导体等的电子元件的包装材料或者防静电用胶带而使用。并且，具有防静电功能的包装材料为了防止灰尘等的污染物的吸附或者防止产生静电而使用。 
现有的具备防静电功能的包装材料的制造方法有如下方法。即，作为利用真空装置的物理气相沉积(PVD，(Physical Vapor Deposition)方法，使用喷溅源将作为金属物质的铝(Al)、镍(Ni)、铜(Cu)、氧化铟(In2O3)、氧化锡(SnO)等蒸镀到一般高分子薄膜，从而制造导电性/静电耗散性的包装材料的方法。 
利用所述PVD方法制造的具备防静电功能的包装材料在进行制造工艺的过程中以及/或者制造工艺结束后，由于高分子薄膜和被蒸镀的金属薄膜之间的粘结力低，从而存在金属薄膜脱落而使防静电功能降低，且污染周围环境的问题。 
具有防静电功能的包装材料的另一种制造方法有利用表面活性剂的方法，且有在高分子树脂薄膜表面涂覆表面活性剂的外部涂覆型和在制造高分子树脂薄膜时混合投入防静电用表面活性剂的内部混合投入型。采用前者时，制造费用低廉，初期性能良好，但是由于起到防静电功能的表面活性剂涂覆在薄膜的表面，因此防静电功能的持久性以及耐久性较低，并且存在污染使用时所接触的其他物质的问题。 
采用内部混合投入型时，持续性及耐久性相比前者优良，并且制造费用低廉，制造工艺简单，因此是当前使用较多的方法。 
虽然目前为止所知道的具备防静电功能的所述包装材料均为初期性能优良，但是持续性差，因此存在经过一定时间之后会丧失静电耗散效果的问题。 
发明内容
本发明的目的在于提供一种防静电功能优良，且具有耐久性、润滑性以及化学惰性，从而能够持久使用的具备防静电功能的新型包装材料及其制造方法。 
本发明可以提供具有如下特征的具有防静电功能的电子元件包装用包装材料：由聚酰亚胺、聚乙烯、聚对苯二甲酸乙二酯、聚丙烯中的某一个构成的5至100μm厚度的高分子薄膜上以1至40nm厚度镀覆DLC(Diamond like carbon)薄膜，从而使包装材料的电阻为106至1010Ω/sq。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料：所述DLC(Diamond like carbon)薄膜镀覆到所述高分子薄膜的双面。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料：所述DLC(Diamond like carbon)薄膜中掺杂Al或者W中的一个以上物质。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料：将所述高分子薄膜上的DLC(Diamond like carbon)薄膜为缓冲层，在所述缓冲层上还包含金属薄膜。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料：所述金属薄膜层上还包含DLC(Diamond like carbon)薄膜。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料：在高分子薄膜上将DLC(Diamond like carbon)薄膜和金属薄膜按照上述顺序反复堆叠，并且最后的叠层以DLC(Diamond like carbon)薄膜结束，且使整个多层薄膜层的厚度为3至100nm。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料的制造方法，该方法包含：向反应室内装入高分子薄膜的步骤；将所述反应室内真空化到10-3至10-7torr的步骤；以及向所述高分子薄膜上蒸镀DLC(Diamond like carbon)薄膜的步骤，其中，在蒸镀所述DLC(Diamond like carbon)薄膜的步骤中，使用包含线性离子源的磁性增强离子枪蒸镀装置和卷对卷装置，该线性离子源包含阳极、产生磁场的阴极以及气体供给部，并且驱动卷绕所述高分子薄膜的第一辊和第二辊，以向所述高分子薄膜上连续蒸镀DLC(Diamond like carbon)薄膜，且被蒸镀的所述DLC(Diamond like carbon) 薄膜的厚度为1至40nm，而且高分子薄膜上蒸镀DLC薄膜的、具有防静电功能的包装材料的阻抗为106至1010Ω/sq。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料的制造方法：在蒸镀所述DLC(Diamond like carbon)薄膜的步骤中使用卷对卷装置，向卷绕于卷对卷装置的辊的所述高分子薄膜的双面同时蒸镀DLC(Diamond like carbon)薄膜。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料的制造方法：蒸镀所述DLC(Diamond like carbon)薄膜的步骤包含向磁性增强离子枪蒸镀装置供给CH4，、C2H2、C6H6、C4H10中的一个以上气体，并向所述离子枪接通1000至2500V的电源。 
并且，本发明可提供如下特征的具有防静电功能的电子元件包装用包装材料的制造方法：还包含在蒸镀所述DLC(Diamond like carbon)薄膜的步骤之后用喷溅方法蒸镀金属薄膜的步骤。 
根据本发明，可以制造几乎永久地具有103至1010Ω/sq导电性的静电耗散性的、具有防静电功能的包装材料，且由于DLC(Diamond like carbon)薄膜的特性，具有防静电功能的所述包装材料具有能够防止污染物附着的防污性。 
并且，根据本发明的卷对卷(Roll to Roll)装置使得具有防静电功能的所述包装材料的制造在空间和时间上高效率地进行，从而降低了成本，提高了具有防静电功能的包装材料的价格竞争力。 
附图说明
图1是根据本发明实施例的具有防静电功能的包装材料的剖面结构图； 
图2是根据本发明另一实施例的具有防静电功能的包装材料的剖面结构图； 
图3是示出制造本发明的具有防静电功能的包装材料时所使用的离子枪的结构的结构概略图； 
图4是制造本发明的具有防静电功能的包装材料时所使用的卷对卷装置的结构图； 
图5是通过图4的卷对卷装置制造的、双面被涂覆的、具有防静电功能 的包装材料的剖面结构图。 
主要符号说明：100为高分子薄膜，110为DLC(Diamond like carbon)薄膜，120为金属薄膜，200为离子枪蒸镀装置，300为卷对卷装置，310为第一辊，320为第二辊，330为离子枪，340为喷溅源。 
具体实施方式
以下，参照附图来详细说明本发明的优选实施例。 
类钻碳(Diamond like carbon；称为DLC)薄膜具有与钻石类似的机械特性和光学特性的同时，其原子排列在结构上包含与钻石不同的结构，并且硬度、耐磨性等高，化学稳定性优良，因此也具有耐腐蚀的特点。尤其是，能够进行大面积蒸镀，蒸镀均匀度在5％以内。并且表现出较低的摩擦系数，从而润滑特性优良，弹力大。因此，在高分子薄膜蒸镀DLC(Diamond like carbon)薄膜时，不仅具有静电耗散性，还具有如述的DLC(Diamond like carbon)固有的特性。 
利用上述的DLC(Diamond like carbon)薄膜的特性，可以制造出如图1一样结构的、具有防静电功能的包装材料。即，在高分子薄膜100上蒸镀DLC(Diamond like carbon)薄膜110，由此可以制造阻抗为103至1010Ω/sq，优选为106至1010Ω/sq的具有防静电功能的包装材料。此时，DLC(Diamond like carbon)薄膜110的材料除了通常的碳化合物以外，可以掺杂Si、Cu、Al、Ti、W、Cr中的一个以上物质，以进一步提高导电性。 
并且，作为本发明的另一实施例，将蒸镀在高分子薄膜100上的DLC(Diamond like carbon)薄膜110作为为缓冲层而蒸镀金属薄膜120，并在金属薄膜(120)上蒸镀DLC(Diamond like carbon)薄膜110，由此可以制造同时具备导电性和静电耗散性的、具有防静电功能的包装材料(参照图2)。这样的构成可以克服在现有高分子薄膜上涂覆金属物质时因缺少粘结力而致使金属物质脱落的现象。根据情况，可以将金属薄膜120作为最终表面，但是将DLC(Diamond like carbon)薄膜110形成在金属薄膜120上，由此能够确保金属薄膜120的长期粘贴状态。 
采用如图2的结构的具有防静电功能的包装材料的阻抗为103至1010Ω/sq，且具有由金属薄膜120构成的缓冲层，因此具有可加快静电耗散速度，且增大DLC(Diamond like carbon)薄膜110的粘贴力的优点。 
并且，可将如上所述的DLC(Diamond like carbon)薄膜110和金属薄膜120交替地反复堆叠，从而制造形成多层薄膜的、具有防静电功能的包装材料。此时，优选地，在高分子薄膜100的正上面堆叠DLC(Diamond like carbon)薄膜110，然后交替堆叠多个金属薄膜120和多个DLC(Diamond like carbon)薄膜110，最终以堆叠DLC(Diamond like carbon)薄膜110而结束，这可以防止金属薄膜120的脱落。整个多层薄膜的厚度为3至100nm，这在考虑防止脱落以及工艺时间和费用方面时比较适合。 
并且，对于其制造方法将在后面进行描述，但是如图5所示，可以制造出对高分子薄膜100的不止一个表面的双面全部蒸镀DLC(Diamond like carbon)薄膜110或者DLC(Diamond like carbon)薄膜110、金属薄膜120以及DLC(Diamond like carbon)薄膜110的、具有防静电功能的包装材料。 
所述高分子薄膜100可从聚酰亚胺(Polyimide)、聚乙烯(Polyethylene)、聚对苯二甲酸乙二酯(Polyethyleneterephthalate)、聚丙烯(Polypropylene)中任选一个，所述具备防静电功能的包装材料中所包含的DLC(Diamond like carbon)薄膜110的厚度优选为1至50nm，此时在生产效率和功能方面优良，但也可蒸镀到该范围以上的厚度。 
以下，说明将DLC(Diamond like carbon)薄膜110蒸镀到高分子薄膜100而进行制造的、具有防静电功能的包装材料的制造方法及装置。 
图3示出根据本发明实施例的磁性增强离子枪蒸镀装置200的结构。 
用于涂覆DLC(Diamond like carbon)薄膜的方法只要是化学气相沉积(CVD)、等离子体增强化学气相沉积法(PECVD)、喷溅法、离子束沉积法等制造DLC(Diamond like carbon)薄膜的方法，任意一种方法都可以使用，可是在本发明的实施例中，为了制造具有防静电功能的包装材料而蒸镀DLC(Diamond like carbon)薄膜时，为使作为母材的高分子薄膜不引起热变形，使用了工艺温度较低，能够进行大面积均匀蒸镀，且蒸镀速度较快，从而生产效率较好的磁性增强离子枪(Magnetic enhanced ion gun：MEIG)蒸镀装置(参照图3)。磁性增强离子枪蒸镀装置200具备包含气体供给部的离子枪和离子枪电源供给部，并且可具备具有防静电功能的、用于调节导电性的喷溅装置。所述离子枪由阳极210和阴极220构成，且阴极220产生磁场。 
在本实施例中，作为高分子薄膜100使用了上面提及的高分子材料中的聚酰亚胺(PI)以及聚酯(PET)薄膜，薄膜的长度为100m，采用PI薄膜时， 厚度为5至100μm；采用PET薄膜时，厚度为125μm。但是该薄膜的尺寸可根据客户的要求而进行多种变化。 
1)本实施例中所使用的PI以及PET薄膜为本身带正电的高分子薄膜，在蒸镀DLC(Diamond like carbon)薄膜110之前使用IPA(异丙醇)进行洗涤，以去除附着在高分子薄膜100的灰尘，但是此工序可以省略。 
2)将经洗涤的高分子薄膜100附着到金属板，并装入到反应室内，且固定到夹具上，然后使反应室真空化到10-1至10-6torr。但是，对于大面积高分子薄膜的薄膜蒸镀，将使用后述的卷对卷装置，因此无需将高分子薄膜附着到金属板。 
3)为了去除有可能存在于高分子薄膜100表面的氧化膜等的污染物且活性化高分子薄膜100的表面而使薄膜的蒸镀变得容易，使用氩离子(Ar+)、氧离子、氮离子中的一个以上离子来进行去除表面污染物的清洁工序。 
所述清洁工序条件可根据高分子薄膜100的装入量和污染程度而变化，但是通常将1000至2500V的电压通过离子枪的电源供给部进行施加，并在未满一分钟的短时间内进行清洁。 
4)然后，为了将DLC(Diamond like carbon)薄膜110蒸镀到高分子薄膜100上，向磁性增强离子枪蒸镀装置200供给作为碳氢气体的CH4、C2H2、C6H6、C4H10中的一个以上气体，并将1000至2500V的电源接通到所述离子枪，以产生碳等离子体。并且，为了控制蒸镀到高分子薄膜100的离子的能量且释放累积的电荷，向附着有所述高分子薄膜100金属板施加50至350KHz频率的、-50至-200V的电压。所施加的电压也可以是直流电压(DC)，虽然由于施加电压而使蒸镀工序的效率得到提高，但这不是必须进行的，为了装置以及工艺的简化，可以省略。 
并且，在DLC(Diamond like carbon)薄膜110的形成中，除了碳氢化合物之外，混合Si、Cu、Al、Ti、W、Cr中的一个以上，从而形成掺杂有这些的DLC(Diamond like carbon)薄膜110。这是因为，相比仅以碳氢化合物为材料的DLC(Diamond like carbon)薄膜，导电性更加优良。采用Si时，可将硅烷(SiH4)以气体状态进行混合，由此进行掺杂，此外的金属物质的掺杂可利用喷溅方法进行掺杂。 
所述DLC(Diamond like carbon)薄膜110的厚度为1至50nm的厚度，这在考虑发挥物质的特性以及生产率方面时比较适合。 
通过如上所述的工艺而制造的、具有防静电功能的包装材料的阻抗为103至1010Ω/sq，具有静电耗散性。 
以下为本发明的另一实施例，说明在蒸镀DLC(Diamond like carbon)薄膜110之后，将DLC(Diamond like carbon)薄膜110作为缓冲层，在其上蒸镀金属薄膜120的过程。 
上述的步骤1)、2)以及3)进行为相同，并在蒸镀DLC(Diamond like carbon)薄膜110之后，使用喷溅源将金属薄膜120蒸镀到高分子薄膜100上。所述金属薄膜可使用Cr、Ti、Cu、Al、W中的任意一个以上，也可形成Si薄膜，由于各金属的导电性互异，因此厚度可蒸镀为1nm～5nm左右范围内。尤其优选为将钛(Titanium；Ti)蒸镀为1nm～5nm厚度，根据厚度可将阻抗值调节为103～1010Ω/sq，施加到喷溅源的电压以及随之产生的电流量可进行控制，以调节具有防静电功能的包装材料的阻抗值，在本实施例中控制流入到喷溅源的电流量在0.1至5A/cm2。此时，为了对形成金属薄膜(该金属薄膜蒸镀在高分子薄膜100)的离子进行加速，优选向附着有高分子薄膜100的金属板施加50至350KHz频率的、-50至-200V电压，但是，偏置电压也可以是直流电压，为了装置以及工艺简化，可省略施加电压的步骤。 
蒸镀金属薄膜120之后，再蒸镀DLC(Diamond like carbon)薄膜110的工艺可与上述的步骤4)相同地执行。由此制造具有如图2结构的、具有防静电功能的包装材料。缓冲层的存在如同前述，可以加快静电耗散速度，并加强金属薄膜120和DLC(Diamond like carbon)薄膜110之间的粘贴力，以预防脱落现象。 
如上述的具备缓冲层的、具有防静电功能的包装材料的阻抗为103至1010Ω/sq，且具有静电耗散性。 
并且，在高分子薄膜100上交替地堆叠DLC(Diamond like carbon)薄膜110和金属薄膜120，以形成多层薄膜，这也可以根据前面说明的DLC(Diamond like carbon)薄膜110蒸镀方法和金属薄膜120蒸镀方法，交替实施这些方法来实现。 
根据本实施例的磁性增强离子枪蒸镀装置200采用线性离子源(Linear Ion Source)。该磁性增强离子枪装置(Magnetic enhanced ion gun：MEIG)不需要热电子(thermal electron)，这与在其他工艺中使用的离子源不同，因此没有因离子枪或者离子源产生的发热，从而在工艺中装置温度不会上升。因 此，适合向对热敏感的高分子物质蒸镀DLC(Diamond like carbon)薄膜。 
并且，在制造本发明的具有防静电功能的包装材料时，可利用生产效率优良的卷对卷(Roll To Roll)装置300。 
如图4所示，在反应室内隔着一定距离布置的第一辊310以及第二辊320上卷绕高分子薄膜100，反应室中设置多个离子枪330和喷溅源340，从而驱动所述辊的同时，向大面积的高分子薄膜蒸镀所期望的DLC(Diamond like carbon)薄膜110或者金属薄膜120的缓冲层以及DLC(Diamond like carbon)薄膜110。 
并且，卷绕于两个辊的高分子薄膜100的面积较大，因此中央部分有可能下垂，所以如图4所示，在中间布置支持辊，从而使高分子薄膜100维持紧绷状态。 
利用如上所述的卷对卷装置300时，工艺速度为5m/min，可大幅提高生产效率，容易将DLC(Diamond like carbon)薄膜110或者DLC(Diamond like carbon)薄膜110、金属薄膜120以及DLC(Diamond like carbon)薄膜110蒸镀到高分子薄膜100的双面。这样的卷对卷装置降低了具有防静电功能的包装材料的生产成本，从而提高了价格竞争力。 
图5示出可通过卷对卷装置制造的、双面具有蒸镀层的、具有防静电功能的包装材料的剖面结构图。 
本发明的权利不限于上述说明的实施例，由权利要求书所记载的范围而确定，并且应当知道，本发明领域中具备通常知识的技术人员在权利要求书所记载的范围内可进行多种变形和改动。 

Claims (4)

1.一种具有防静电功能的电子元件包装用包装材料的制造方法，其特征在于包含：
向反应室内装入高分子薄膜的步骤；
将所述反应室内真空化到10-3至10-7torr的步骤；以及
向所述高分子薄膜上蒸镀类钻碳薄膜的步骤，
其中，在蒸镀所述类钻碳薄膜的步骤中，
使用包含线性离子源的磁性增强离子枪蒸镀装置和卷对卷装置，该线性离子源包含阳极、产生磁场的阴极以及气体供给部，
驱动卷绕有所述高分子薄膜的第一辊和第二辊，以向所述高分子薄膜上连续蒸镀类钻碳薄膜，
被蒸镀的所述类钻碳薄膜的厚度为1至40nm，
高分子薄膜上蒸镀有类钻碳薄膜的、具有防静电功能的包装材料的阻抗为106至1010Ω/sq。
2.根据权利要求1所述的具有防静电功能的电子元件包装用包装材料的制造方法，其特征在于，在蒸镀所述类钻碳薄膜的步骤中使用卷对卷装置，向卷绕于卷对卷装置的辊的所述高分子薄膜的双面同时蒸镀类钻碳薄膜。
3.根据权利要求2所述的具有防静电功能的电子元件包装用包装材料的制造方法，其特征在于，蒸镀所述类钻碳薄膜的步骤包含向磁性增强离子枪蒸镀装置供给CH4、C2H2、C6H6、C4H10中的一个以上气体，并向所述离子枪接通1000至2500V的电源。
4.根据权利要求3所述的具有防静电功能的电子元件包装用包装材料的制造方法，其特征在于还包含在蒸镀所述类钻碳薄膜的步骤之后用喷溅方法蒸镀金属薄膜的步骤。
CN201110181349.6A 2010-06-23 2011-06-23 具备防静电功能的电子元件包装用包装材料及其制造方法 Active CN102390607B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510073349.2A CN104723625B (zh) 2010-06-23 2011-06-23 具备防静电功能的电子元件包装用包装材料及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100059355A KR101019065B1 (ko) 2010-06-23 2010-06-23 나노 박막을 코팅한 대전방지 기능을 갖는, 전자부품 포장용 포장재 및 그 제조방법
KR10-2010-0059355 2010-06-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510073349.2A Division CN104723625B (zh) 2010-06-23 2011-06-23 具备防静电功能的电子元件包装用包装材料及其制造方法

Publications (2)

Publication Number Publication Date
CN102390607A CN102390607A (zh) 2012-03-28
CN102390607B true CN102390607B (zh) 2015-03-25

Family

ID=43938328

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110181349.6A Active CN102390607B (zh) 2010-06-23 2011-06-23 具备防静电功能的电子元件包装用包装材料及其制造方法
CN201510073349.2A Active CN104723625B (zh) 2010-06-23 2011-06-23 具备防静电功能的电子元件包装用包装材料及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201510073349.2A Active CN104723625B (zh) 2010-06-23 2011-06-23 具备防静电功能的电子元件包装用包装材料及其制造方法

Country Status (3)

Country Link
US (2) US20120021201A1 (zh)
KR (1) KR101019065B1 (zh)
CN (2) CN102390607B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101019065B1 (ko) * 2010-06-23 2011-03-07 (주)제이 앤 엘 테크 나노 박막을 코팅한 대전방지 기능을 갖는, 전자부품 포장용 포장재 및 그 제조방법
KR101486627B1 (ko) * 2012-04-18 2015-02-23 (주)제이 앤 엘 테크 나노 박막을 코팅한 대전방지 기능을 갖는 시이트 및 그 제조방법
EP2876649B1 (en) * 2013-11-21 2017-10-11 Airbus DS GmbH Method for manufacturing a charge dissipative surface layer
DE102015106811B4 (de) * 2015-04-30 2022-02-03 VON ARDENNE Asset GmbH & Co. KG Verwendung einer Folienstruktur in einem Energiespeicher und Energiespeicher
CN106240105A (zh) * 2016-08-05 2016-12-21 广东正业科技股份有限公司 一种复合材料及其制备方法
CN106810806A (zh) * 2016-12-23 2017-06-09 苏州缔绿电子科技有限公司 一种用于精密仪器的防静电包装材料及其制备方法
US10993058B2 (en) 2017-02-28 2021-04-27 1More Inc Manufacturing method for diamond-like carbon vibrating diaphragm and loudspeaker
CN110100040A (zh) * 2017-11-28 2019-08-06 应用材料公司 用以涂布柔性基板的沉积设备、涂布柔性基板的方法及具有涂布的柔性基板
EP3717674A1 (en) * 2017-11-28 2020-10-07 Applied Materials, Inc. Deposition apparatus, method of coating a flexible substrate and flexible substrate having a coating
CN114703461B (zh) * 2022-04-12 2024-03-15 浙江水晶光电科技股份有限公司 一种化合物薄膜及其制备方法
CN115522162A (zh) * 2022-09-26 2022-12-27 苏州辉钻纳米新材料有限公司 高阶静电消散碳基多元复合薄膜材料及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1268282A (zh) * 1997-08-28 2000-09-27 美国3M公司 软性电路和载体及制造工艺
US6277375B1 (en) * 1997-03-03 2001-08-21 Board Of Regents, The University Of Texas System Immunoglobulin-like domains with increased half-lives
CN101205625A (zh) * 2006-12-22 2008-06-25 中国科学院兰州化学物理研究所 含金纳米颗粒的类金刚石复合薄膜的制备方法
CN101665904A (zh) * 2008-09-04 2010-03-10 中国科学院兰州化学物理研究所 一种含铝类金刚石碳膜及其制备方法
WO2010050542A1 (ja) * 2008-10-29 2010-05-06 Ntn株式会社 硬質多層膜成形体およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3176558B2 (ja) * 1996-02-09 2001-06-18 麒麟麦酒株式会社 コーティングフィルムおよびその製造方法
CN1178825C (zh) * 1999-11-29 2004-12-08 电气化学工业株式会社 电子元件的封装容器
JP2004247408A (ja) * 2003-02-12 2004-09-02 Sony Precision Technology Inc 磁気検出センサ
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
CN101568490B (zh) * 2006-11-22 2016-04-13 安格斯公司 基底外壳的类金刚石碳涂层
KR101019065B1 (ko) * 2010-06-23 2011-03-07 (주)제이 앤 엘 테크 나노 박막을 코팅한 대전방지 기능을 갖는, 전자부품 포장용 포장재 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277375B1 (en) * 1997-03-03 2001-08-21 Board Of Regents, The University Of Texas System Immunoglobulin-like domains with increased half-lives
CN1268282A (zh) * 1997-08-28 2000-09-27 美国3M公司 软性电路和载体及制造工艺
CN101205625A (zh) * 2006-12-22 2008-06-25 中国科学院兰州化学物理研究所 含金纳米颗粒的类金刚石复合薄膜的制备方法
CN101665904A (zh) * 2008-09-04 2010-03-10 中国科学院兰州化学物理研究所 一种含铝类金刚石碳膜及其制备方法
WO2010050542A1 (ja) * 2008-10-29 2010-05-06 Ntn株式会社 硬質多層膜成形体およびその製造方法

Also Published As

Publication number Publication date
US20140305793A1 (en) 2014-10-16
US20120021201A1 (en) 2012-01-26
CN104723625A (zh) 2015-06-24
KR101019065B1 (ko) 2011-03-07
CN102390607A (zh) 2012-03-28
CN104723625B (zh) 2017-08-11
US9267201B2 (en) 2016-02-23

Similar Documents

Publication Publication Date Title
CN102390607B (zh) 具备防静电功能的电子元件包装用包装材料及其制造方法
US9011985B2 (en) Method of manufacture of multilayer film
JP6474546B2 (ja) プラズマを使った前処理装置を有した蒸着装置
JP6190590B2 (ja) ベアリングコンポーネント、ベアリング、機械、およびベアリングコンポーネントの被覆方法
JP5730235B2 (ja) ガスバリアフィルムおよびガスバリアフィルムの製造方法
JPWO2014156888A1 (ja) 積層体及びガスバリアフィルム
CN102529210A (zh) 具有保护膜层的镀膜玻璃及其制备方法
JP2012517530A (ja) ポリマー基材上の２層バリヤー
JP7320862B2 (ja) 膜及び製造プロセス
WO2004092672A2 (en) Amorphous carbon layer for heat exchangers
JP5509864B2 (ja) ガスバリア性フィルムの製造方法
JP2013253319A (ja) ガスバリア性フィルム及びその製造方法
CN101880876B (zh) 压缩机滑片及其表面涂层处理方法
JP5751027B2 (ja) 透明導電性フィルム
WO2006043333A1 (ja) ガスバリア性透明樹脂基板、その製造方法、およびガスバリア性透明樹脂基板を用いたフレキシブル表示素子
WO2013168739A1 (ja) ガスバリア性フィルム及びその製造方法
JP2019112682A (ja) フッ素樹脂被覆体及びその製造方法
CN202415379U (zh) 具有保护膜层的镀膜玻璃
JPWO2017086035A1 (ja) ガスバリアー性フィルム
KR101486627B1 (ko) 나노 박막을 코팅한 대전방지 기능을 갖는 시이트 및 그 제조방법
WO2017104357A1 (ja) プラズマｃｖｄ成膜装置用電極、電極の製造方法、プラズマｃｖｄ成膜装置および機能性フィルムの製造方法
JP2013234366A (ja) ガスバリア性フィルムの製造方法
JP7077460B1 (ja) アルミニウム材及びアルミニウム材用静電気放電特性調整皮膜
JP5892789B2 (ja) 透明ガスバリアフィルム、透明ガスバリアフィルムの製造方法、有機ｅｌ素子、太陽電池および薄膜電池
JP5982904B2 (ja) ガスバリア性積層フィルムおよびガスバリア性積層フィルムの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant