CN102347251A - 嵌入式晶圆级接合方法 - Google Patents

嵌入式晶圆级接合方法 Download PDF

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Publication number
CN102347251A
CN102347251A CN2011101661510A CN201110166151A CN102347251A CN 102347251 A CN102347251 A CN 102347251A CN 2011101661510 A CN2011101661510 A CN 2011101661510A CN 201110166151 A CN201110166151 A CN 201110166151A CN 102347251 A CN102347251 A CN 102347251A
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dielectric layer
tube core
moulding compound
bond pads
tube
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CN102347251B (zh
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余振华
林俊成
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种方法包括：提供载体，该载体上设置有粘结层；以及提供管芯，该管芯包括第一表面、相对于第一表面的第二表面。管芯进一步包括邻近第二表面的多个接合焊盘；以及多个接合焊盘上方的介电层。该方法进一步包括：将管芯置于粘结层上，使得第一表面面向粘结层，介电层背向粘结层；形成模塑料以覆盖管芯，其中模塑料包围管芯；将处于管芯正上方的模塑料移除，以暴露出介电层；以及在模塑料上面形成再分布线，并且该再分布线穿过介电层电连接到的多个接合焊盘。

Description

嵌入式晶圆级接合方法
相关申请的交叉参考
本申请要求于2010年7月30日提交的美国临时专利申请第61/369,366号名称为“Embedded Wafer-Level Bonding Approaches”的优先权，其全部内容通过引证结合在此。
技术领域
本发明涉及半导体领域，更具体地，涉及嵌入式晶圆级接合方法。
背景技术
随着半导体技术的发展，半导体芯片/管芯变得越来越小。同时，有更多的功能需要集成到半导体管芯中。因此，半导体管芯需要将越来越多的I/O焊盘封装到越来越小的区域，因而I/O焊盘的密度随着时间迅速增加。故半导体管芯的封装变得越发困难，这对于封装的产量(yield)产生了不利影响。
传统的封装技术可以划分为两类。在第一类中，在切割晶圆上的管芯之前对该管芯进行封装。这种封装技术具有一些优点，比如生产量较高，并且成本较低。此外，需要较少的底部填充或者模塑料(moldingcompound)。然而，这种封装技术也有缺点。如上所述，管芯的尺寸变得越来越小，对应的封装可以只是扇入型(fan-in type)封装，其中，每个管芯的I/O焊盘都被限制在对应管芯表面的正上方的区域。随着管芯的区域被限制，由于限制了I/O焊盘的间距(pitch)，因此就限制了I/O焊盘的数量。如果焊盘的间距减小，则会形成焊桥。另外，在固定的球尺寸需求下，焊球必须具有确定尺寸，这样就限制了能够封装到管芯表面的焊球数量。
在另一种封装类型中，在管芯被封装之前就将管芯从晶圆上切割下来，并且只有“已知的合格管芯”才能够被封装。这种封装技术的优点是能够形成扇出型(fan-out)封装，这就意味着管芯上的I/O焊盘可以重新分布到大于管芯的区域，因此，可以增加封装到管芯表面的I/O焊盘数量。
发明内容
为解决上述问题，本发明提供了一种方法，包括：提供载体，在载体上设置有粘结层；提供管芯，管芯包括：衬底；多个接合焊盘，位于衬底上方；以及介电层，位于多个接合焊盘上方；将管芯置于粘结层上；形成模塑料以覆盖管芯，其中，模塑料包围管芯；移除模塑料的管芯正上方的部分，以暴露介电层；以及在介电层上面形成再分布线，再分布线与多个接合焊盘中的至少一个电连接。
其中，在将管芯置于粘结层上的步骤之前，管芯进一步包括：金属支柱，金属支柱形成在介电层中，并且与多个接合焊盘电连接。
其中，在形成再分布线的步骤期间，金属支柱用作对准标记。
该方法进一步包括：在移除模塑料的部分的步骤之后，形成穿透介电层的金属支柱，金属支柱与多个接合焊盘电连接。
其中，移除模塑料的部分的步骤包括：在模塑料上实施化学机械抛光(CMP)。
该方法进一步包括：在形成再分布线的步骤之后，在再分布线的上方形成金属凸块，金属凸块与再分布线电连接。
该方法进一步包括：卸下载体。
其中，介电层的厚度大于大约10μm。
此外，还提供了一种方法，包括：提供载体，在载体上设置有粘结层；提供多个管芯，多个管芯中的每个管芯都包括：衬底；多个接合焊盘，位于衬底上方；介电层，位于多个接合焊盘上方；以及多个金属支柱，位于介电层中，并与多个接合焊盘电连接；将多个管芯置于粘结层上，多个管芯中的每个管芯的衬底的底面面向粘结层；将模塑料填入多个管芯之间，其中，模塑料覆盖多个管芯中的每个管芯的介电层；对模塑料实施平坦化，直到暴露多个金属支柱；以及在多个金属支柱上方形成再分布线，再分布线与多个金属支柱电连接。
其中，在实施平坦化的步骤之前，金属支柱的顶表面基本上与介电层的顶表面平齐。
其中，在实施平坦化的步骤之前，金属支柱的顶表面低于介电层的顶表面。
其中，介电层包含非模塑料介电材料。
其中，介电层包括模塑料。
其中，再分布线延伸到模塑料的正上方。
该方法进一步包括：在形成再分布线的步骤之后，在再分布线中的一条的上方形成金属凸块，金属凸块与再分布线中的一条连接；以及将载体从多个管芯和模塑料上移除。
此外，还提供了一种方法，包括：提供载体，在载体上设置有粘结层；提供多个管芯，多个管芯中的每个管芯都包括：衬底；多个接合焊盘，位于衬底上方；以及介电层，位于多个接合焊盘上方；将多个管芯置于粘结层上，多个管芯中的每个管芯的衬底的底面面向粘结层；将模塑料填入多个管芯之间，其中，模塑料覆盖多个管芯中的每个管芯的介电层；对模塑料实施平坦化，直到暴露介电层；蚀刻介电层的暴露部分，以形成多个开口，从而暴露多个接合焊盘；以及在多个开口中形成多个导电支柱。
该方法进一步包括：在多个导电支柱上方形成再分布线，并且再分布线与多个导电支柱电连接。
该方法进一步包括：在形成再分布线的步骤之后，在再分布线上方形成多个金属凸块，并且金属凸块与再分布线电连接；以及将载体从多个管芯和模塑料下面移除。
其中，多个导电支柱包含铜。
其中，介电层的厚度大于大约10μm。
附图说明
为了更加全面地理解本发明及其优点，现在将以下描述和附图结合起来作为参考，其中：
图1到图7A是根据各种实施例的制作嵌入型晶圆级封装的中间阶段的横截面图；
图7B示出了图7A中所示管芯的俯视图；以及
图8到图13是根据备选实施例的制作嵌入型晶圆级封装的中间阶段的横截面图。
具体实施方式
下面，详细讨论本发明优选实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出制造和使用本发明的具体方式，而不用于限制本公开的范围。
根据实施例，提供了一种新式的嵌入式晶圆级封装结构及其形成方法。示出了制作的中间阶段的实施例。还论述了实施例的变化。在各个视图和所示实施例中，相似的参考标号用于表示相似的部件。
参考图1，提供了管芯20，该管芯20是多个相同管芯20(参考图2)中的一个。管芯20可以包括半导体衬底21，还可以包括集成电路器件23以及形成在其中的覆盖的互连结构(未示出)。集成电路器件23可以包括有源器件，比如晶体管。接合(bond)焊盘22形成在管芯20中，并且通过互连结构电连接到集成电路器件23。接合焊盘22可以由铝、铜、镍、或者其组合物制成。介电层24形成在接合焊盘22上方。在实施例中，接合焊盘22的顶表面基本上和介电层24的底表面24b平齐。介电层24是厚度为T的厚层，该厚度T大于大约10μm，还可以处于大约10μm和30μm之间，或者处于大约10μm和大约50μm之间。介电层24的材料可以选自阻焊、聚苯并恶唑(polybenzoxazole，PBO)、苯环丁烯(benzocyclobutene，BCB)、模塑料等等。介电层24的边缘垂直对齐到衬底21的相应边缘。
金属支柱(metal pillar)26形成在介电层24中，并且电连接到接合焊盘22。在实施例中，金属支柱26的底表面与接合焊盘22的顶表面相接触。金属支柱26可以包含铜，从而在整个描述中可选地将其称为铜支柱26。然而，其他导电材料(比如镍和/或铝)也可以用到铜支柱26中。铜支柱26的高度H也可以大于大约10μm，还可以处于大约5μm和30μm之间，或者处于大约10μm和大约50μm之间。横向尺寸W(取决于铜支柱26的俯视图形状)可以是长度/宽度或者直径，该横向尺寸W可以小于大约60μm。因此，H/W的比率可以大于大约0.15。在实施例中，铜支柱26的顶表面26a基本上与介电层24的顶表面24a平齐。在其他实施例中，铜支柱26的顶表面26’a高于顶表面24a，从而使得铜支柱26的部分突出到顶表面24a以上。在其他实施例中，铜支柱26的顶表面26”低于顶表面24a，从而将铜支柱26嵌入到介电层24中，此时介电层24的薄层处于铜支柱26的正上方。
参考图2，粘结层28(adhesive layer)设置(例如，层压(laminate))于载体30上。粘结层28可以由胶粘剂(glue)形成，或者可以是由箔形成的迭层(lamination layer)。接着，管芯20通过粘结层28被置于载体30上。在管芯20包括半导体衬底21的实施例中，半导体衬底21的底表面21b与粘结层28相接触。载体30可以包括对准标记31，从而使得管芯20准确地安装在载体30的期望位置上。在相邻的管芯20之间留有空间。
图3示出了将模塑料34填入管芯20之间的空间。管芯20的顶表面也由模塑料34覆盖。模塑料34可以是有机材料(比如环氧树脂)，该有机材料以液态形式填充到管芯22之间的空间。接着，实施固化工艺(curingprocess)，以使模塑料34凝固。
参考图4，在模塑料34上实施平坦化(比如，研磨(grinding))，直到铜支柱26(可能还有介电层24)暴露出来。因此，介电层24的顶表面24a、铜支柱26的顶表面26a、以及模塑料34的顶表面34a相互之间可以基本平齐。在铜支柱26嵌入到介电层24的实施例中，介电层24也被研磨。研磨的结果是，没有模塑料34处在管芯20的正上方。当从上面看下去时，铜支柱26被介电层24包围，并且与介电层24相接触。此外，每个管芯20中的铜支柱26和介电层24形成集成元件，该集成元件被模塑料34包围。
接下来，如图5所示，形成有再分布层(redistribution layer，RDL)，其中RDL包括(多个)介电层38，以及介电层38中的导电线路40(包括金属线和金属通孔，也称为再分布线)。导电线路40可以延伸到对应管芯20的边缘之外，模塑料34的正上方，这样所形成的封装是扇出封装。在导电线路40的形成过程中，铜支柱26可以用作对准标记。因此，RDL在形成中的准确性得以改进。这样，就行成了晶圆44，包括管芯20、模塑料34、和RDL。
图6示出了金属凸块42的形成，该金属凸块42电连接到导电线路40。此外，还形成了接合焊盘(未示出)，金属凸块42形成在接合焊盘上，并且与其物理接触。因此，金属凸块42位于新形成的晶圆44的顶表面上。金属凸块42可以是焊球，使用球装头部(ball-mounting head)将该焊球传送到晶圆44上。备选地，金属凸块42是非可回流(non-reflowable)凸块，比如铜凸块。一些金属凸块42还可以形成在模塑料34正上方之外。
接下来，如图7A所示，将载体30从晶圆44上卸下，以及将粘结层28移除并使其离开晶圆44。接着，晶圆44被固定到带子46上，并且沿着划片槽(scribe line)48切割开晶圆44。因此，形成了管芯50。可以理解，在每个管芯50中，管芯20的底表面20b与模塑料34的底表面34b平齐。图7B示出了管芯50的俯视图，该俯视图示出模塑料34包围管芯20，并且与管芯20的侧壁相接触。
图8到图13示出了制作根据备选实施例的嵌入型晶圆级封装的中间阶段的横截面图。除非另有说明，在这些实施例中的参考标号表示与图1到图7B中的实施例相似的部件。参考图8，提供了管芯20(带有所示出的管芯20之一)。除了在接合焊盘22上方没有铜支柱形成，管芯20与图1中的管芯20相似。这样，介电层24覆盖了接合焊盘22，介电层24的底表面24b基本上与接合焊盘22的顶表面22a平齐。介电层24中没有形成导电部件。此外，介电层24的厚度T可以大于大约10μm，还可以处于大约10μm和30μm之间，或者处于大约10μm和大约50μm之间。
接下来，如图9所示，管芯20通过粘结层28被安装到载体30上，随后施用模塑料34，如图10所示。模塑料34的顶表面34a高于介电层24的顶表面24a。接着，模塑料34被研磨，直到介电层24暴露出来，并且模塑料34处于管芯20正上方的部分被移除。所得到的结构如图11所示。
参考图12，通过蚀刻介电层24，在介电层24中形成开口54。接合焊盘22通过开口54而暴露出来。在实施例中，开口54是单镶嵌开口(singledamascene opening)。在备选实施例中，介电层38形成在介电层24上方，开口54是双镶嵌开口，包括处于介电层24中的下部和处于介电层38中的上部，其中上部比下部宽。参考图13，开口54中被填入导电材料，以形成导电柱26，除导电柱26之外还可能填入导电线路40。在实施例中，导电支柱26和导电线路40由铜、铝、铁、银、钼、焊膏等等形成。可以实施平坦化(比如化学机械抛光，CMP)，以使得导电支柱26(或者导电线路40，如果有的话)的顶表面与介电层24(或者介电层38的顶表面)的顶表面平齐。在其他实施例中，实施电镀步骤，以将铜填入到开口54中。在其他实施例中，可以使用其他方法(比如物理气相沉积(PVD))，并且填入的材料可以包括钛层(未示出)和位于钛层上方的铜层(未示出)。图13还示出了介电层60的形成。剩下的步骤实质上与图7A和图7B中所示出的相同，因此在本文中不再赘述。
根据实施例的形成工艺，载体30用于在再分布线的研磨和形成期间支撑相应的覆盖封装结构。从而，可以减小模塑料34的厚度。因此，晶圆44(参考图6)的翘曲(warpage)较小。模塑料34(如图7A)没有形成在管芯20的背面上，从而管芯20的热消散不会被弱化(degraded)。此外，金属支柱26还可以用作对准标记以提高对准的精度。
根据实施例，一种方法包括：提供载体，该载体上设置有粘结层；以及提供管芯，该管芯包括第一表面、相对于第一表面的第二表面。管芯进一步包括邻近第二表面的多个接合焊盘；以及多个接合焊盘上方的介电层。该方法进一步包括：将管芯置于粘结层上，使得第一表面面向粘结层，介电层背向粘结层；形成模塑料以覆盖管芯，其中模塑料包围管芯；将处于管芯正上方的模塑料移除，以暴露出介电层；以及在模塑料上面形成再分布线，并且该再分布线穿过介电层电连接到多个接合焊盘中的一个上。
根据其他实施例，一种方法包括：提供载体，在该载体上设置有粘结层；以及提供多个管芯，该多个管芯中的每个管芯都包括：具有底面的衬底；在相对于底面的一侧上的接合焊盘；在多个接合焊盘上方的介电层；以及介电层中多个金属支柱，该金属支柱电连接到多个接合焊盘。该方法进一步包括：将多个管芯置于粘结层上，多个管芯中的每个管芯的衬底的底面都面向粘结层；将模塑料填充到多个管芯之间，其中，模塑料覆盖了多个管芯中的每个管芯的介电层；在模塑料上实施平坦化，直到多个金属支柱暴露出来；以及在介电层上方形成再分布线，该再分布线电连接到多个金属支柱。
根据其他实施例，一种方法包括：提供载体，在该载体上设置有粘结层；以及提供多个管芯，该多个管芯中的每个管芯都包括：具有底面的衬底；在相对于底面的一侧上的接合焊盘；在多个接合焊盘上方的介电层，其中介电层中基本上没有导电部件。该方法进一步包括：将多个管芯置于粘结层上，多个管芯中的每个管芯的衬底的底面都面向粘结层；将模塑料填充到多个管芯之间，其中模塑料覆盖了多个管芯中的每个管芯的介电层；以及在模塑料上实施平坦化，直到多个金属支柱暴露出来。在实施平坦化的步骤之后，介电层被蚀刻以形成多个开口，其中多个接合焊盘通过多个开口暴露出来。开口被填充以形成多个导电支柱。
根据其他实施例，一种器件包括：衬底；衬底上方的介电层；介电层中的多个金属支柱；以及与衬底和介电层的边缘相接触的模塑料。介电层和模塑料由不同的介电材料形成。
根据其他实施例，一种器件包括：半导体衬底；半导体衬底表面上方的有源器件；半导体衬底上方的介电层；介电层中的多个金属支柱；以及包围半导体衬底和介电层，并且与半导体衬底和介电层的边缘相接触的模塑料，模塑料和介电层由不同的材料形成。模塑料的顶表面基本上与金属支柱的顶表面和介电层的顶表面平齐。该器件进一步包括：介电层上方的再分布线，该再分布线电连接到多个金属支柱。
尽管已经详细地描述了本发明及其优势，但应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。此外，每条权利要求构成单独的实施例，并且多个权利要求和实施例的组合在本发明的范围内。

Claims (10)

1.一种方法，包括：
提供载体，在所述载体上设置有粘结层；
提供管芯，所述管芯包括：衬底；多个接合焊盘，位于所述衬底上方；以及介电层，位于所述多个接合焊盘上方；
将所述管芯置于所述粘结层上；
形成模塑料以覆盖所述管芯，其中，所述模塑料包围所述管芯；
移除所述模塑料的所述管芯正上方的部分，以暴露所述介电层；以及
在所述介电层上面形成再分布线，所述再分布线与所述多个接合焊盘中的至少一个电连接。
2.根据权利要求1所述的方法，其中，在将所述管芯置于所述粘结层上的步骤之前，所述管芯进一步包括：金属支柱，所述金属支柱形成在所述介电层中，并且与所述多个接合焊盘电连接。
3.根据权利要求2所述的方法，其中，在形成再分布线的步骤期间，所述金属支柱用作对准标记。
4.根据权利要求1所述的方法，进一步包括：在移除所述模塑料的所述部分的步骤之后，形成穿透所述介电层的金属支柱，所述金属支柱与所述多个接合焊盘电连接。
5.根据权利要求1所述的方法，其中，移除所述模塑料的所述部分的步骤包括：在所述模塑料上实施化学机械抛光(CMP)。
6.根据权利要求1所述的方法，进一步包括：在形成再分布线的步骤之后，在所述再分布线的上方形成金属凸块，所述金属凸块与所述再分布线电连接。
7.根据权利要求1所述的方法，进一步包括：卸下所述载体。
8.根据权利要求1所述的方法，其中，所述介电层的厚度大于大约10μm。
9.一种方法，包括：
提供载体，在所述载体上设置有粘结层；
提供多个管芯，所述多个管芯中的每个管芯都包括：
衬底；
多个接合焊盘，位于所述衬底上方；
介电层，位于所述多个接合焊盘上方；以及
多个金属支柱，位于所述介电层中，并与所述多个接合焊盘电连接；
将所述多个管芯置于所述粘结层上，所述多个管芯中的每个管芯的衬底的底面面向所述粘结层；
将模塑料填入所述多个管芯之间，其中，所述模塑料覆盖所述多个管芯中的每个管芯的介电层；
对所述模塑料实施平坦化，直到暴露所述多个金属支柱；以及
在所述多个金属支柱上方形成再分布线，所述再分布线与所述多个金属支柱电连接。
10.一种方法，包括：
提供载体，在所述载体上设置有粘结层；
提供多个管芯，所述多个管芯中的每个管芯都包括：
衬底；
多个接合焊盘，位于所述衬底上方；以及
介电层，位于所述多个接合焊盘上方；
将所述多个管芯置于所述粘结层上，所述多个管芯中的每个管芯的衬底的底面面向所述粘结层；
将模塑料填入所述多个管芯之间，其中，所述模塑料覆盖所述多个管芯中的每个管芯的介电层；
对所述模塑料实施平坦化，直到暴露所述介电层；
蚀刻所述介电层的暴露部分，以形成多个开口，从而暴露所述多个接合焊盘；以及
在所述多个开口中形成多个导电支柱。
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