CN102334182B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN102334182B
CN102334182B CN201080009458.3A CN201080009458A CN102334182B CN 102334182 B CN102334182 B CN 102334182B CN 201080009458 A CN201080009458 A CN 201080009458A CN 102334182 B CN102334182 B CN 102334182B
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China
Prior art keywords
semiconductor chip
projection
insulative resin
adhering film
substrate
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Expired - Fee Related
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CN201080009458.3A
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English (en)
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CN102334182A (zh
Inventor
滨崎和典
松村孝
佐藤大祐
须贺保博
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Dexerials Corp
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Dexerials Corp
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Abstract

本发明提供一种使用绝缘性树脂粘接薄膜(NCF)将半导体芯片倒装片安装在基板上的半导体装置的制造方法，其中，在热压时，防止NCF的溢出并防止凸起和电极焊盘之间插入绝缘性树脂或无机填料，所得到的半导体装置表现出充分的耐吸湿回流性的制造方法。具体地说，将具有相当于半导体芯片的外围配置的多个凸起所包围的区域的面积的60～100%的大小以及2×102～1×105Pa·s的最低熔融粘度的NCF暂时粘贴在与凸起对应的基板的多个电极所包围的区域。然后，以该凸起和与其对应的电极对置的方式将半导体芯片和基板对位，从半导体芯片侧进行热压。由此，使凸起和电极进行金属键合，使NCF熔融进而热硬化。由此，得到半导体装置。

Description

半导体装置的制造方法
技术领域
本发明涉及将具有外围配置的多个凸起的半导体芯片隔着绝缘性树脂粘接薄膜倒装片安装在基板上而取得半导体装置的半导体装置的制造方法。
背景技术
采用含有导电粒子的各向异性导电粘接薄膜(ACF)将半导体芯片倒装片安装在基板上来制造半导体装置被广泛地进行，但是，布线间距的精细化进一步发展，以导电粒子的粒径和布线间距的关系确保连接可靠性变得困难。
因此，在半导体芯片上设置能够细微地制作的金球凸起（gold stud bump），将该半导体芯片隔着绝缘性树脂粘接薄膜倒装片安装在基板上(专利文献1)。在这样的隔着绝缘性树脂粘接薄膜进行倒装片安装的情况下，一般地，在将比与半导体芯片大致相同的面积稍大的面积的绝缘性树脂粘接薄膜暂时粘贴在基板上之后，将半导体芯片和布线基板对位，从半导体芯片侧进行热压来进行安装。
[专利文献1]:日本特开2008-203484号公报。
但是，在如专利文献1那样进行倒装片安装的情况下，存在如下这样的问题：如图5所示，熔融了的绝缘性树脂粘接薄膜(NCF)102从具有凸起100的半导体芯片101的外缘溢出，溢出的树脂附着在热压接合器103上，在热压时压力变得过大，存在得不到想要的质量的半导体装置的情况。此外，也存在如下这样的问题：在热压后，从基板104的电极105和半导体芯片101的凸起100之间不能够完全排除绝缘性树脂或无机填料，所以，存在在它们之间不能够形成满意的金属键合，连接可靠性大幅度地下降的情况。进而，也存在如下这样的问题：在吸湿回流后，绝缘性树脂粘接薄膜102露出到外界，所以，产生硬化不良或半导体芯片101的浮动的问题，也由于这一点而存在连接可靠性下降的情况。
发明内容
本发明是为了解决以上的现有技术的问题而提出的，其目的在于提供一种对半导体芯片和基板使用绝缘性树脂粘接薄膜进行倒装片安装的半导体装置的制造方法，其中，在热压时，防止熔融了的绝缘性树脂粘接薄膜的溢出和在凸起与电极焊盘之间插入绝缘性树脂或无机填料，所得到的半导体装置表现出充分的耐吸湿回流性。
本发明人发现，将相对于半导体芯片的外围配置的多个凸起所包围的区域的面积的绝缘性树脂粘接薄膜的面积和绝缘性树脂粘接薄膜的最低熔融粘度分别设定在特定范围，由此，能够实现上述目的，进而完成了本发明。
即，本发明提供一种制造方法，将具有外围配置的多个凸起的半导体芯片隔着绝缘性树脂粘接薄膜倒装片安装在具有与该凸起对应的多个电极的基板上，从而制造半导体装置，其特征在于，将具有与半导体芯片的外围配置的多个凸起所包围的区域的面积的60～100%相当的大小和2×102～1×105Pa·s的最低熔融粘度的绝缘性树脂粘接薄膜暂时粘贴在与该凸起对应的基板的多个电极所包围的区域，以该凸起和与其对应的电极对置的方式对半导体芯片和基板进行对位，从半导体芯片侧进行热压，由此，使凸起和电极进行金属键合，使绝缘性树脂粘接薄膜熔融进而热硬化。
在本发明的半导体装置的制造方法中，将具有与半导体芯片的外围配置的多个凸起所包围的区域的面积的至少60～100%相当的大小和2×102～1×105Pa·s的最低熔融粘度的绝缘性树脂粘接薄膜暂时粘贴在与半导体芯片的多个凸起对应的基板的多个电极所包围的区域。因此，在将半导体芯片热压到基板之后，在半导体芯片的凸起和与其对应的基板的电极焊盘之间不存在绝缘性树脂粘接薄膜，此外，能够使熔融了的绝缘性树脂粘接薄膜不溢出到半导体芯片的外侧。进而，在热压时，能够以比较低的压力进行。因此，能够将所有的凸起充分地金属键合到对应的连接焊盘上，也能够防止熔融了的树脂向热压接合器附着。此外，如前述那样，在热压后，能够在不产生树脂的溢出的情况下对半导体芯片的凸起和基板的电极的接合部进行密封，能够使耐吸湿回流性提高。因此，能够得到较高的连接可靠性的半导体装置。
附图说明
图1A是具有凸起的半导体芯片的剖面图。
图1B是半导体芯片的凸起侧平面图。
图2是具有电极的基板的剖面图。
图3A是暂时粘贴了绝缘性树脂粘接薄膜的基板的剖面图。
图3B是暂时粘贴了绝缘性树脂粘接薄膜的基板的绝缘性树脂粘接薄膜侧平面图。
图4A是利用热压接合器将半导体芯片热压到基板之后的说明图。
图4B是利用热压接合器将半导体芯片充分地热压到基板后的说明图。
图5是现有技术的倒装片安装的说明图。
具体实施方式
参照附图对本发明的半导体装置的制造方法进行说明。
(1) 首先，准备具有凸起1的半导体芯片2(图1A)、具有电极11的基板12(图2)、绝缘性树脂粘接薄膜(NCF)。
在半导体芯片2中，凸起1在半导体芯片2的外周边缘附近配置为外围配置、即一列的凸起列(图1B)。在图1B中为一列的凸起列，但是，也可以是二列以上的凸起列。
作为半导体芯片2或凸起1，并没有特别限制，但是，对于凸起1，从能够高度地对应精细间距化的角度出发，能够优选利用金球凸起。关于这样的金球凸起的大小，其高度优选为35～100μm、更优选为35～70μm、特别优选为35～45μm。此外，其底径优选为10～50μm、更优选为10～40μm、特别优选为10～20μm。此外，凸起间间距优选为50～200μm、更优选为50～70μm。
为了防止熔融了的绝缘性树脂的溢出，半导体芯片2的外周边缘和凸起1的距离优选设定为0.07～0.2mm、更优选设定为0.1～0.15mm。
电极11以与应该连接的半导体芯片2的凸起1(凸起列)对应的方式配置在基板12上。并且，在该多个电极所包围的区域暂时粘贴有绝缘性树脂粘接薄膜(NCF)。
作为基板12或电极11，并不特别限定，例如，作为基板12，能够使用刚性基板、柔性基板、刚性柔性基板等。作为电极11，例如能够使用将铜箔成形为平台状并且在表面进行Ni/Au电镀而成的电极。
作为绝缘性树脂粘接薄膜(NCF)，能够使用在将半导体芯片安装到基板上时所使用的公知的绝缘性树脂粘接薄膜，例如，能够举出将环氧树脂类硬化型树脂组成物或丙烯酸类硬化型树脂组成物成形为薄膜状而成的绝缘性树脂粘接薄膜。这些能够优选使用热硬化型的材料。
环氧树脂类热硬化型树脂组成物例如由在分子内具有两个以上环氧基的化合物或者树脂、环氧树脂硬化剂、成膜成分等构成。
作为在分子内具有两个以上环氧基的化合物或者树脂，可以是液状也可以是固体状，能够例示出双酚A型环氧树脂或双酚F型环氧树脂等的二官能环氧树脂、苯酚酚醛型环氧树脂或甲酚酚醛型环氧树脂等的酚醛型环氧树脂等。此外，也能够使用3,4 -环氧环己烯基甲基-3’，4’ -环氧环己烷羧酸等的脂环族环氧树脂化合物。
作为环氧树脂硬化剂，例如，能够举出胺类硬化剂、咪唑类硬化剂、酸酐类硬化剂、锍阳离子类硬化剂等。硬化剂也可以为潜在性。
作为成膜成分，例如，能够举出与环氧树脂化合物或环氧树脂相溶的苯氧基树脂或丙烯酸树脂。
环氧树脂类热硬化型树脂组成物根据需要能够含有公知的硬化促进剂、硅烷偶联剂、金属捕捉剂、聚丁橡胶等的应力缓和剂、二氧化硅等的无机填料、聚异氰酸酯类交联剂、着色剂、防腐剂、溶剂等。
丙烯酸类热硬化型树脂组成物例如由(甲基)丙烯酸酯单体、成膜用树脂、二氧化硅等的无机填料、硅烷偶联剂、自由基聚合引发剂等构成。
作为(甲基)丙烯酸酯单体，能够使用单官能(甲基)丙烯酸酯单体、多官能(甲基)丙烯酸酯单体、或者在它们中导入了环氧基、氨酯基、氨基、环氧乙烷基、环氧丙烷基等的变性单官能或者多官能(甲基)丙烯酸酯单体。此外，只要不损害本发明的效果，能够并用可与(甲基)丙烯酸酯单体进行自由基共聚的其他的单体，例如(甲基)丙烯酸、醋酸乙烯、苯乙烯、氯乙烯等。
作为丙烯酸类热硬化型树脂组成物用的成膜用树脂，能够举出苯氧基树脂、聚乙烯醇缩醛树脂、聚乙烯醇缩丁醛树脂、烷基纤维素树脂、聚酯树脂、丙烯酸树脂、苯乙烯树脂、聚氨酯树脂、聚对苯二甲酸乙二醇酯树脂等。
作为自由基聚合引发剂，能够举出过氧化苯甲酰、过氧化二异丙苯、过氧化二丁酯等的有机过氧化物、偶氮二异丁腈、偶氮二腈等的偶氮类化合物。
丙烯酸类热硬化型树脂组成物根据需要能够含有聚丁橡胶等的应力缓和剂或醋酸乙酯等的溶剂、着色剂、防氧化剂、防老化剂等。
关于从这些环氧树脂类热硬化型树脂组成物或丙烯酸类热硬化型树脂组成物向绝缘性树脂粘接薄膜(NCF)的成形，能够使用公知的方法进行。
关于在以上说明的本发明中所使用的绝缘性树脂粘接薄膜(NCF)，需要将其最低熔融粘度设定为2×102～1×105Pa·s、优选设定为5×102～5×104Pa·s。这是因为，当与该范围相比成为低粘度时，产生溢出的可能性增加，当成为高粘度时，不能够将凸起和电极的接合部密封的可能性增加。
此外，当绝缘性树脂粘接薄膜(NCF)的厚度过薄时，处理性下降，也起不到底层填料的功能，当过厚时，产生热压时的溢出，所以，优选为30～70μm，更优选为35～50μm。
(2) 然后，在基板12上暂时粘贴具有2×102～1×105Pa·s的最低熔融粘度的绝缘性树脂粘接薄膜(NCF)(图3A)。该暂时粘贴的位置是与半导体芯片2的外围配置的多个凸起1所包围的区域R的内侧对应的位置(图3B)。
此处，绝缘性树脂粘接薄膜(NCF)的大小是相当于半导体芯片2的外围配置的凸起1所包围的区域R的面积的60～100%、优选70～90%的大小。当小于60%时，不能够密封半导体芯片的凸起和基板的电极的接合部的可能性增大，当超过100%时，有在凸起和电极之间残存未完全排除的绝缘性树脂或无机填料的危险，并且，不能够降低热压条件。
作为暂时粘贴的条件，优选以绝缘性树脂粘接薄膜不实质性地硬化的条件进行，具体地说，能够举出温度60～70℃、压力0.25～1.0MPa、1～3秒这样的条件。
(3) 然后，以凸起1和与其对应的电极11对置的方式，对半导体芯片2和基板12进行对位，从半导体芯片2侧以热压接合器30进行热压(图4A)。在该情况下，首先，凸起1和电极11不隔着绝缘性树脂粘接薄膜而直接接触，所以，在两者之间形成金属键合。关于绝缘性树脂粘接薄膜，使其熔融进而使其热硬化。由此，能够得到半导体装置。在该热压时，熔融了的绝缘性树脂粘接薄膜向半导体芯片2的外缘扩展进而硬化。硬化了的绝缘性树脂粘接薄膜的周缘可以只存在于外围配置的多个凸起1所包围的区域内，但是，如图4B所示，存在于外围配置的多个凸起1和半导体芯片2的外缘之间，这在能够密封凸起1和电极11的接合部这一点上是优选的。
作为热压接合器30，能够使用以往在倒装片安装时所使用的热压接合器。
对于使用这样的热压接合器30的本发明中的热压条件来说，热压的温度优选为120～270℃、更优选为170～200℃。压力优选为0.5～2.5MPa、更优选2.0～2.5MPa。特别地，根据本发明的结构，在以往为10kg/IC的情况下，能够使热压时的压力下降到约1/3～1/5的压力。
通过以上说明的本发明的制造方法所得到的半导体装置具有吸湿回流耐久性并且显示出优异的连接可靠性。
[实施例]
下面，通过实施例具体地对本发明进行说明。并且，在以下的实施例中，NCF用组成物的最低熔融粘度采用锥/板粘度计（cone-plate viscometer）进行测定。
绝缘性树脂粘接薄膜(NCF)的制造例1～5
将表1的成分均匀地进行混合，以固体含量浓度为60质量%的方式在该混合物中添加甲苯并进行混合，得到NCF用组成物。将所得到的组成物使用刮棒涂布机涂敷到剥离薄膜(ｿﾆｰｹﾐｶﾙ&ｲﾝﾌｫﾒｰｼｮﾝﾃﾞﾊﾞｲｽ株式会社制造)上，在80℃的烘箱中进行干燥，得到50μm厚的绝缘性树脂粘接薄膜(NCF)1～5。关于所得到的NCF的最低熔融粘度(Pa·s)，使用锥/板粘度计以升温速度10℃/min进行测，将所得到的结果在表1中示出。并且，从最低熔融粘度的角度出发，能够在本发明中应用的绝缘性树脂粘接薄膜是NCF2～4。
[表1]
表注
*1 苯氧基树脂、東都化成社制造
*2 東都化成社制造
*3 ｼﾞｬﾊﾟﾝエポキシﾚｼﾞﾝ社制造
*4 丙烯腈聚丁橡胶粒子、日本合成ｺﾞﾑ社制造
*5 咪唑类潜在性硬化剂、旭化成ｹﾐｶﾙｽﾞ社制造
*6 信越石英社制造
*7 日本ｱｴﾛｼﾞﾙ社制造
*8 ﾓﾒﾝﾃｨﾌﾞ・ﾊﾟｰﾌｫｰﾏﾝｽ・ﾏﾃﾘｱﾙｽﾞ社制造。
实施例1～7以及比较例1～6
将切割为表2所示的NCF面积比的NCF1～5利用热压接合器(ｿﾆｰｹﾐｶﾙ&ｲﾝﾌｫﾒｰｼｮﾝﾃﾞﾊﾞｲｽ社)暂时粘贴(温度为60℃、压力为0.5MPa、加热加压时间为3秒)在如下的区域，即，具有与设置有外围配置的多个Au球凸起(75～85μm高、150μm间距)的LSI芯片(边长6.3mm、0.1mm厚、凸起和LSI芯片周缘的平均距离为0.1μm)的该凸起对应的电极(对铜进行镍/金电镀所得到的电极)的基板(MCL-E-679F、日立化成工业社)的电极所包围的区域。此处，NCF面积比是所切出的NCF的面积与多个凸起所包围的区域的面积的比例。
(向接合器的树脂附着的有无)
使LSI芯片的凸起面与暂时粘贴了NCF的基板的电极面对置，在进行了对位后，以边长8mm的热压接合器(ｿﾆｰｹﾐｶﾙ&ｲﾝﾌｫﾒｰｼｮﾝﾃﾞﾊﾞｲｽ社)进行热压(本热压接：温度180℃、压力2.5MPa、加热加压时间20秒)，得到半导体装置。对于所得到的半导体装置，以目视对有无树脂向热压接合器附着进行观察。将所得到的结果在表2中示出。
(吸湿、回流耐久性)
对将半导体装置在温度85℃、湿度85%的条件下放置168小时，浸渍在最高265℃的焊料回流炉中之后的导通电阻值进行测定，将小于0.13Ω评价为A、将0.13Ω以上且小于1.0Ω评价为B、将1.0Ω以上评价为C。将所得到的结果在表2中示出。
(初始导通电阻以及PCT后的导通电阻)
此外，对初始导通电阻和PCT试验(在121℃、湿度100%的环境下放置120小时)后的导通电阻进行测定。将所得到的结果(多个测定结果之中的最大的数值)在表2中示出。并且，将1Ω以上的导通电阻的情况作为开放（open）。在实用上，希望导通电阻为0.3Ω以下。
[表2]
。
从表2可知，使用了具有NCF面积比相当于60～100%的大小和2×102～1×105Pa·s的最低熔融粘度的NCF的实施例1～7的半导体基板，在热压时不存在绝缘性树脂的溢出，在初始以及PCT试验后的各个的时刻的导电电阻较低，实现了较高的连接可靠性。特别是，在实施例1～3的情况下，可知PCT试验后的导通电阻与初始导通电阻相差不大并且在吸湿、回流耐久性方面优异。
与此相对，在比较例1、5的情况下，NCF的最低熔融粘度过低，在比较例4的情况下，NCF的面积比过高，所以，观察到树脂向接合器的附着，吸湿、回流耐久性也是“C”评价，PCT后的导通电阻也为“open”。在比较例4的情况下，除了这些之外，初始导通电阻也为“open”。在比较例2、6的情况下，NCF的最低熔融粘度过高，所以，吸湿、回流耐久性为“C”评价，PCT后的导通电阻为“open”。在比较例3的情况下，NCF的面积比过低，所以，吸湿、回流耐久性为“C”评价，并且，初始以及PCT后的导通电阻都为“open”。
(低压压接性评价)
将热压时的压力设定为0.5MPa，除此以外，分别重复实施例1以及2的条件下的测定，其结果是，未观察到树脂向接合器的附着，并且，PCT试验后的导通电阻也未发生变化。因此，可知本发明的制造方法适合于低压压接。
根据本发明的半导体装置的制造方法，能够提供一种半导体装置，在热压时，防止NCF的溢出并且防止在凸起和电极焊盘之间插入绝缘性树脂或无机填料，显示出充分的耐吸湿回流性。
附图标记说明
1、100 凸起
2、101 半导体芯片
11、105 电极
12、104 基板
30、103 热压接合器
NCF、102 绝缘性树脂粘接薄膜
R 区域。

Claims (4)

1.一种制造方法，将具有外围配置的多个凸起的半导体芯片隔着绝缘性树脂粘接薄膜倒装片安装在具有与该凸起对应的多个电极的基板上，从而制造半导体装置，其特征在于，
将具有与半导体芯片的外围配置的多个凸起所包围的区域的面积的60～100%相当的大小并且最低熔融粘度为2×102～1×105Pa·s的范围内任意一个值的绝缘性树脂粘接薄膜暂时粘贴在与该凸起对应的基板的多个电极所包围的区域，以该凸起和与其对应的电极对置的方式对半导体芯片和基板进行对位，从半导体芯片侧进行热压，由此，使凸起和电极进行金属键合，使绝缘性树脂粘接薄膜熔融进而热硬化，
半导体芯片的凸起是高度为35～100μm的金球凸起，
绝缘性树脂粘接薄膜的厚度为30～70μm，
热压的温度为120～270℃、压力为0.5～2.5MPa。
2.如权利要求1所述的制造方法，其特征在于，
以覆盖半导体芯片的外围配置的凸起列所包围的区域的面积的70～90%的方式，将绝缘性树脂粘接薄膜暂时粘贴在基板上。
3.如权利要求1或2所述的制造方法，其特征在于，
绝缘性树脂粘接薄膜含有环氧树脂类硬化型树脂组成物或者丙烯酸类硬化型树脂组成物。
4.如权利要求1或2所述的制造方法，其特征在于，
在热压时，熔融了的绝缘性树脂粘接薄膜向着半导体芯片的外缘扩展，在硬化之后，其周缘存在于外围配置的多个凸起和半导体芯片的外缘之间。
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