CN102272900A - 狭缝式超音速喷嘴及具备该喷嘴的表面处理装置 - Google Patents

狭缝式超音速喷嘴及具备该喷嘴的表面处理装置 Download PDF

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Publication number
CN102272900A
CN102272900A CN2010800042771A CN201080004277A CN102272900A CN 102272900 A CN102272900 A CN 102272900A CN 2010800042771 A CN2010800042771 A CN 2010800042771A CN 201080004277 A CN201080004277 A CN 201080004277A CN 102272900 A CN102272900 A CN 102272900A
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CN
China
Prior art keywords
mentioned
slit
process object
object thing
nozzle
Prior art date
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Pending
Application number
CN2010800042771A
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English (en)
Chinese (zh)
Inventor
金相贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GD MACHINES CO Ltd
Original Assignee
GD MACHINES CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GD MACHINES CO Ltd filed Critical GD MACHINES CO Ltd
Publication of CN102272900A publication Critical patent/CN102272900A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nozzles (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
CN2010800042771A 2009-03-24 2010-03-18 狭缝式超音速喷嘴及具备该喷嘴的表面处理装置 Pending CN102272900A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020090024958A KR100928691B1 (ko) 2009-03-24 2009-03-24 슬릿형 초음속 노즐 및 이를 구비한 표면처리장치
KR10-2009-0024958 2009-03-24
PCT/KR2010/001658 WO2010110546A2 (ko) 2009-03-24 2010-03-18 슬릿형 초음속 노즐 및 이를 구비한 표면처리장치

Publications (1)

Publication Number Publication Date
CN102272900A true CN102272900A (zh) 2011-12-07

Family

ID=41605478

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800042771A Pending CN102272900A (zh) 2009-03-24 2010-03-18 狭缝式超音速喷嘴及具备该喷嘴的表面处理装置

Country Status (4)

Country Link
JP (1) JP2012516233A (ko)
KR (1) KR100928691B1 (ko)
CN (1) CN102272900A (ko)
WO (1) WO2010110546A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113997205A (zh) * 2021-11-26 2022-02-01 山东大学 一种高压脉冲磨料射流发生装置及方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101768655B1 (ko) * 2011-06-20 2017-08-17 주식회사 엘지화학 플로트 유리 세정 시스템용 건조 장치
KR101824628B1 (ko) * 2015-10-16 2018-02-01 라온닉스 주식회사 표면 세정 장치
CN110130250B (zh) * 2019-05-21 2021-01-15 郭旋 一种气压式低损伤的路桩清泥装置
KR102459609B1 (ko) * 2020-12-04 2022-10-27 인하대학교 산학협력단 고압 수소 배관용 이음관 구조

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05253550A (ja) * 1992-03-09 1993-10-05 Sanpo Denki Kk 物品清浄装置
JPH08198431A (ja) * 1995-01-25 1996-08-06 Tsukasa Kogyo Kk 各種粉体処理機器内部自動洗浄システム
JPH11297653A (ja) * 1998-02-13 1999-10-29 Sumitomo Heavy Ind Ltd 表面洗浄方法及び装置
KR20060107841A (ko) * 2003-12-15 2006-10-16 코레플로우 사이언티픽 솔루션스 리미티드 표면 세척용 장치 및 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10211473A (ja) * 1997-01-29 1998-08-11 Shibaura Eng Works Co Ltd エアナイフ、エアナイフの支持装置およびエアナイフを用いた処理装置
KR100328640B1 (ko) * 1999-06-21 2002-03-20 오자와 미토시 표면세정방법 및 장치
JP3856210B2 (ja) * 2002-01-21 2006-12-13 株式会社いけうち ノズル
JP4120991B2 (ja) * 2005-09-05 2008-07-16 福岡県 洗浄ノズル及びそれを用いた洗浄方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05253550A (ja) * 1992-03-09 1993-10-05 Sanpo Denki Kk 物品清浄装置
JPH08198431A (ja) * 1995-01-25 1996-08-06 Tsukasa Kogyo Kk 各種粉体処理機器内部自動洗浄システム
JPH11297653A (ja) * 1998-02-13 1999-10-29 Sumitomo Heavy Ind Ltd 表面洗浄方法及び装置
KR20060107841A (ko) * 2003-12-15 2006-10-16 코레플로우 사이언티픽 솔루션스 리미티드 표면 세척용 장치 및 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113997205A (zh) * 2021-11-26 2022-02-01 山东大学 一种高压脉冲磨料射流发生装置及方法
CN113997205B (zh) * 2021-11-26 2022-11-18 山东大学 一种高压脉冲磨料射流发生装置及方法

Also Published As

Publication number Publication date
KR100928691B1 (ko) 2009-11-27
WO2010110546A3 (ko) 2010-11-25
JP2012516233A (ja) 2012-07-19
WO2010110546A2 (ko) 2010-09-30

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Application publication date: 20111207