CN102262998B - 离子注入装置 - Google Patents

离子注入装置 Download PDF

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Publication number
CN102262998B
CN102262998B CN2011101261575A CN201110126157A CN102262998B CN 102262998 B CN102262998 B CN 102262998B CN 2011101261575 A CN2011101261575 A CN 2011101261575A CN 201110126157 A CN201110126157 A CN 201110126157A CN 102262998 B CN102262998 B CN 102262998B
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CN
China
Prior art keywords
substrate
track
ion beam
process chamber
ion
Prior art date
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Active
Application number
CN2011101261575A
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English (en)
Chinese (zh)
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CN102262998A (zh
Inventor
奥手康弘
立道润一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NINSSIN ION EQUIPMENT CO Ltd
Nissin Ion Equipment Co Ltd
Original Assignee
NINSSIN ION EQUIPMENT CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN102262998A publication Critical patent/CN102262998A/zh
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Publication of CN102262998B publication Critical patent/CN102262998B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
CN2011101261575A 2010-05-26 2011-05-12 离子注入装置 Active CN102262998B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010120053A JP5311681B2 (ja) 2010-05-26 2010-05-26 イオン注入装置
JP2010-120053 2010-05-26

Publications (2)

Publication Number Publication Date
CN102262998A CN102262998A (zh) 2011-11-30
CN102262998B true CN102262998B (zh) 2013-11-20

Family

ID=45009594

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101261575A Active CN102262998B (zh) 2010-05-26 2011-05-12 离子注入装置

Country Status (3)

Country Link
JP (1) JP5311681B2 (ja)
KR (1) KR101243744B1 (ja)
CN (1) CN102262998B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020025103A (ko) * 2002-01-15 2002-04-03 (주)한국 티엠 금연제 및 그 금연제 제조방법
KR101769493B1 (ko) * 2011-12-23 2017-08-30 주식회사 원익아이피에스 기판처리장치 및 그를 가지는 기판처리시스템
TWI524461B (zh) * 2012-02-14 2016-03-01 愛發科股份有限公司 離子束照射裝置
KR101971453B1 (ko) * 2012-11-12 2019-04-24 주식회사 원익아이피에스 기판처리모듈 및 그를 가지는 기판처리시스템
JP5733333B2 (ja) * 2013-04-05 2015-06-10 日新イオン機器株式会社 エネルギー線照射システム
CN104593744A (zh) * 2013-11-01 2015-05-06 韦学运 一种等离子体处理盾构刀具的自动化设备
CN106981540B (zh) * 2017-03-24 2019-07-23 东莞帕萨电子装备有限公司 离子注入跑片方法和离子注入跑片系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195882A (zh) * 1997-04-07 1998-10-14 日本电气株式会社 离子注入方法及装置
CN101061563A (zh) * 2004-09-20 2007-10-24 艾克塞利斯技术公司 经改进的扫描离子注入期间的离子束利用
CN101174534A (zh) * 2006-10-31 2008-05-07 日新意旺机械股份有限公司 离子注入机

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914102B1 (ja) * 1968-12-26 1974-04-05
JP2743274B2 (ja) * 1988-07-01 1998-04-22 東京エレクトロン株式会社 基板処理装置および基板搬送装置
US5053627A (en) * 1990-03-01 1991-10-01 Ibis Technology Corporation Apparatus for ion implantation
JP2664121B2 (ja) * 1993-02-23 1997-10-15 株式会社ジーティシー イオン注入装置
JPH0799224A (ja) * 1993-09-28 1995-04-11 Hitachi Ltd 多チャンバ型半導体製造装置
JPH07252653A (ja) * 1994-03-17 1995-10-03 Rohm Co Ltd イオン注入装置およびこれを用いたイオン注入方法
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
JP4901203B2 (ja) * 2005-12-12 2012-03-21 東芝モバイルディスプレイ株式会社 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置
JP2009152002A (ja) * 2007-12-19 2009-07-09 Nissin Ion Equipment Co Ltd イオンビーム照射装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195882A (zh) * 1997-04-07 1998-10-14 日本电气株式会社 离子注入方法及装置
CN101061563A (zh) * 2004-09-20 2007-10-24 艾克塞利斯技术公司 经改进的扫描离子注入期间的离子束利用
CN101174534A (zh) * 2006-10-31 2008-05-07 日新意旺机械股份有限公司 离子注入机

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2009-152002A 2009.07.09
JP特开平7-99224A 1995.04.11

Also Published As

Publication number Publication date
JP2011249096A (ja) 2011-12-08
KR20110129821A (ko) 2011-12-02
JP5311681B2 (ja) 2013-10-09
CN102262998A (zh) 2011-11-30
KR101243744B1 (ko) 2013-03-13

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