JP2011249096A - イオン注入装置 - Google Patents
イオン注入装置 Download PDFInfo
- Publication number
- JP2011249096A JP2011249096A JP2010120053A JP2010120053A JP2011249096A JP 2011249096 A JP2011249096 A JP 2011249096A JP 2010120053 A JP2010120053 A JP 2010120053A JP 2010120053 A JP2010120053 A JP 2010120053A JP 2011249096 A JP2011249096 A JP 2011249096A
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- Prior art keywords
- substrate
- ion beam
- ion implantation
- track
- ion
- Prior art date
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 172
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 108
- 230000007246 mechanism Effects 0.000 claims abstract description 17
- 230000007723 transport mechanism Effects 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 24
- 238000010586 diagram Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】互いに離間する平行な一対の軌道31、32を有し、それら各軌道31、32に沿って同一形状の基板2を、その面板部が前記軌道31、32と平行になり、かつ各軌道上の基板2同士が平行となる姿勢に維持しながら、互いに逆向きに進行させる搬送機構3と、一対のイオンビーム照射機構5とを具備し、前記面板部と垂直な方向から視て、各軌道上の基板2が、所定の重合位置に到達したときに、略重なり合うように構成するとともに、各イオンビームBが前記重合位置にある基板を避けており、かつ、当該基板2の進行方向側と反進行方向側をそれぞれ通過するように構成した。
【選択図】図1
Description
2・・・イオンビーム照射機構
3・・・搬送機構
31、32・・・軌道
34・・・重合位置
B・・・イオンビーム
Claims (7)
- 互いに離間する平行な一対の軌道を有し、それら各軌道に沿って同一形状の基板を、その面板部が前記軌道と平行になり、かつ各軌道上の基板同士が平行となる姿勢に維持しながら、互いに逆向きに進行させる搬送機構と、
リボン状のイオンビームを、そのビーム進行方向と平行な側面のうち大きいほうの面である主面が、前記軌道上を進行する基板によって横切られる位置に照射する一対のイオンビーム照射機構とを具備し、
前記面板部と垂直な方向から視て、各軌道上の基板が、所定の重合位置に到達したときに、略重なり合うように構成するとともに、
前記各イオンビームが前記重合位置にある基板を避けており、かつ、当該基板の進行方向側と反進行方向側をそれぞれ通過するように構成してあることを特徴とするイオン注入装置。 - 前記面板部と平行かつ前記軌道と平行な方向から視て、各イオンビームがずれていることを特徴とする請求項1記載のイオン注入装置。
- 前記面板部と平行かつ前記軌道と平行な方向から視て、各イオンビームが隣り合って略接するように構成されていることを特徴とする請求項2記載のイオン注入装置。
- 前記各イオンビームが真空排気される処理室内において基板に照射されるものであり、
前記搬送機構が、前記処理室内において一方の軌道から他方の軌道へと基板を移動させるように構成されている請求項1、2又は3記載のイオン注入装置。 - 基板が大気圧下から搬入される真空予備室と、前記真空予備室と前記処理室との間に設けられた待機室とを更に備えた請求項4記載のイオン注入装置。
- 前記待機室及び前記処理室との間に真空弁を設けた請求項5記載のイオン注入装置。
- 前記搬送機構が、一方の軌道に沿って前記待機室内から前記処理室内へと基板を進行させ、他方の軌道に沿って前記処理室内から前記待機室内へと基板を進行させるものであり、
各軌道上の基板を、同時に前記処理室内へ搬出入するように構成されている請求項5又は6記載のイオン注入装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010120053A JP5311681B2 (ja) | 2010-05-26 | 2010-05-26 | イオン注入装置 |
CN2011101261575A CN102262998B (zh) | 2010-05-26 | 2011-05-12 | 离子注入装置 |
KR1020110048903A KR101243744B1 (ko) | 2010-05-26 | 2011-05-24 | 이온주입장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010120053A JP5311681B2 (ja) | 2010-05-26 | 2010-05-26 | イオン注入装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011249096A true JP2011249096A (ja) | 2011-12-08 |
JP5311681B2 JP5311681B2 (ja) | 2013-10-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010120053A Active JP5311681B2 (ja) | 2010-05-26 | 2010-05-26 | イオン注入装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5311681B2 (ja) |
KR (1) | KR101243744B1 (ja) |
CN (1) | CN102262998B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013122088A1 (ja) * | 2012-02-14 | 2013-08-22 | 日新イオン機器 株式会社 | イオンビーム照射装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020025103A (ko) * | 2002-01-15 | 2002-04-03 | (주)한국 티엠 | 금연제 및 그 금연제 제조방법 |
KR101769493B1 (ko) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | 기판처리장치 및 그를 가지는 기판처리시스템 |
KR101971453B1 (ko) * | 2012-11-12 | 2019-04-24 | 주식회사 원익아이피에스 | 기판처리모듈 및 그를 가지는 기판처리시스템 |
JP5733333B2 (ja) * | 2013-04-05 | 2015-06-10 | 日新イオン機器株式会社 | エネルギー線照射システム |
CN104593744A (zh) * | 2013-11-01 | 2015-05-06 | 韦学运 | 一种等离子体处理盾构刀具的自动化设备 |
CN106981540B (zh) * | 2017-03-24 | 2019-07-23 | 东莞帕萨电子装备有限公司 | 离子注入跑片方法和离子注入跑片系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4914102B1 (ja) * | 1968-12-26 | 1974-04-05 | ||
JPH02144333A (ja) * | 1988-07-01 | 1990-06-04 | Tokyo Electron Ltd | 基板処理装置および基板搬送装置 |
JPH05502327A (ja) * | 1990-03-01 | 1993-04-22 | アイビス テクノロジー コーポレイション | イオン注入装置 |
JPH06252079A (ja) * | 1993-02-23 | 1994-09-09 | G T C:Kk | イオン注入方法及びその装置 |
JP2007163640A (ja) * | 2005-12-12 | 2007-06-28 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置の製造方法及び製造装置 |
JP2009152002A (ja) * | 2007-12-19 | 2009-07-09 | Nissin Ion Equipment Co Ltd | イオンビーム照射装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0799224A (ja) * | 1993-09-28 | 1995-04-11 | Hitachi Ltd | 多チャンバ型半導体製造装置 |
JPH07252653A (ja) * | 1994-03-17 | 1995-10-03 | Rohm Co Ltd | イオン注入装置およびこれを用いたイオン注入方法 |
JP3006535B2 (ja) * | 1997-04-07 | 2000-02-07 | 日本電気株式会社 | イオン注入方法および装置 |
US7078714B2 (en) | 2004-05-14 | 2006-07-18 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus |
US6953942B1 (en) * | 2004-09-20 | 2005-10-11 | Axcelis Technologies, Inc. | Ion beam utilization during scanned ion implantation |
JP4240109B2 (ja) * | 2006-10-31 | 2009-03-18 | 日新イオン機器株式会社 | イオン注入装置 |
-
2010
- 2010-05-26 JP JP2010120053A patent/JP5311681B2/ja active Active
-
2011
- 2011-05-12 CN CN2011101261575A patent/CN102262998B/zh active Active
- 2011-05-24 KR KR1020110048903A patent/KR101243744B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4914102B1 (ja) * | 1968-12-26 | 1974-04-05 | ||
JPH02144333A (ja) * | 1988-07-01 | 1990-06-04 | Tokyo Electron Ltd | 基板処理装置および基板搬送装置 |
JPH05502327A (ja) * | 1990-03-01 | 1993-04-22 | アイビス テクノロジー コーポレイション | イオン注入装置 |
JPH06252079A (ja) * | 1993-02-23 | 1994-09-09 | G T C:Kk | イオン注入方法及びその装置 |
JP2007163640A (ja) * | 2005-12-12 | 2007-06-28 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置の製造方法及び製造装置 |
JP2009152002A (ja) * | 2007-12-19 | 2009-07-09 | Nissin Ion Equipment Co Ltd | イオンビーム照射装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013122088A1 (ja) * | 2012-02-14 | 2013-08-22 | 日新イオン機器 株式会社 | イオンビーム照射装置 |
KR20140130151A (ko) * | 2012-02-14 | 2014-11-07 | 닛신 이온기기 가부시기가이샤 | 이온 빔 조사 장치 |
JPWO2013122088A1 (ja) * | 2012-02-14 | 2015-05-11 | 日新イオン機器株式会社 | イオンビーム照射装置 |
KR101631930B1 (ko) * | 2012-02-14 | 2016-06-20 | 닛신 이온기기 가부시기가이샤 | 이온 빔 조사 장치 |
US9595418B2 (en) | 2012-02-14 | 2017-03-14 | Ulvac, Inc. | Ion beam irradiation device |
Also Published As
Publication number | Publication date |
---|---|
KR20110129821A (ko) | 2011-12-02 |
JP5311681B2 (ja) | 2013-10-09 |
CN102262998A (zh) | 2011-11-30 |
KR101243744B1 (ko) | 2013-03-13 |
CN102262998B (zh) | 2013-11-20 |
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