CN102254961A - 一种太阳能电池专用绒面导电玻璃及其制备方法与应用 - Google Patents

一种太阳能电池专用绒面导电玻璃及其制备方法与应用 Download PDF

Info

Publication number
CN102254961A
CN102254961A CN2011101412768A CN201110141276A CN102254961A CN 102254961 A CN102254961 A CN 102254961A CN 2011101412768 A CN2011101412768 A CN 2011101412768A CN 201110141276 A CN201110141276 A CN 201110141276A CN 102254961 A CN102254961 A CN 102254961A
Authority
CN
China
Prior art keywords
electro
conductive glass
matte
nano
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011101412768A
Other languages
English (en)
Other versions
CN102254961B (zh
Inventor
王洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huizhou Yi Hui photoelectric materials Limited by Share Ltd
Original Assignee
HUIZHOU YIHUI SOLAR ENERGY TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUIZHOU YIHUI SOLAR ENERGY TECHNOLOGY Co Ltd filed Critical HUIZHOU YIHUI SOLAR ENERGY TECHNOLOGY Co Ltd
Priority to CN2011101412768A priority Critical patent/CN102254961B/zh
Publication of CN102254961A publication Critical patent/CN102254961A/zh
Priority to EP12793834.8A priority patent/EP2717320B1/en
Priority to JP2013525133A priority patent/JP5734431B2/ja
Priority to PCT/CN2012/070984 priority patent/WO2012163101A1/zh
Priority to KR1020137017506A priority patent/KR101510578B1/ko
Priority to PT127938348T priority patent/PT2717320T/pt
Priority to US13/822,485 priority patent/US20140174521A1/en
Application granted granted Critical
Publication of CN102254961B publication Critical patent/CN102254961B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • C03C17/2453Coating containing SnO2
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3671Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3678Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/70Properties of coatings
    • C03C2217/77Coatings having a rough surface
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/90Other aspects of coatings
    • C03C2217/94Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948Layers comprising indium tin oxide [ITO]
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

本发明公开了一种太阳能电池专用绒面导电玻璃及其制备方法与应用。一种太阳能电池专用绒面导电玻璃,在玻璃基片上镀有透明导电膜,透明导电膜的上表面是带有纳米级U形绒度的绒面;其制备方法是:采用磁控溅射镀透明导电膜,然后用浸镀的方法将纳/微米球吸附于其表面作为掩模,再通过磁控溅射在纳/微米球间隙增加透明导电膜厚度,最后用超声震动方法去除纳/微米球,实现大面积低成本制备具有纳米级U形绒面的导电玻璃。本发明方法得到的导电玻璃重复性好、U形绒面尺度合适、分布均匀、生产效率高、生产成本低,适合于推广应用。

Description

一种太阳能电池专用绒面导电玻璃及其制备方法与应用
技术领域
本发明属于特殊玻璃生产技术领域,具体涉及一种太阳能电池专用绒面导电玻璃及其制备方法与应用。
背景技术
导电玻璃是一种在普通平板玻璃的一侧镀有透明导电薄膜,使得整个玻璃具有透明和导电双重功效的特种玻璃。除了在液晶显示器、保温门窗等方面的应用外,导电玻璃在光伏薄膜电池中通常是必不可少的组成部分——用作电池的透明电极和基板。导电玻璃光电品质的高低直接影响光伏电池的性能,因此是制备非晶硅、微晶硅、碲化铬、铜铟镓硒薄膜电池等的关键原材料之一。如何低成本地制备高品质太阳能电池专用导电玻璃,是制备低成本高效率太阳能电池,实现太阳能廉价发电的必要前提条件。
目前,现有的用于生产太阳能电池的专用导电玻璃及制备方法有:
1)磁控溅射制备的氧化铟锡(ITO)导电玻璃;
2)磁控溅射制备的氧化锌铝(AZO)导电玻璃;
3)常压化学气相沉积法制备的掺氟二氧化锡(FTO)导电玻璃;
4)低压化学气相沉积法制备的掺硼氧化锌(BZO)或氧化锌铝(AZO)导电玻璃。
为增强电池的光吸收,导电玻璃的透明导电膜需要具有纳/微米尺度的绒度,即不平整度,使得光在入射时发生漫散射(通常通过雾度值来测量),增加光在电池内部传输的光程(如图1所示)。
目前实验室规模的导电玻璃样品中,主要有以下三种绒面:
1)磁控溅射后用盐酸湿法刻蚀制备的氧化锌铝(AZO)导电玻璃绒面(如图2所示);
2)常压化学气相沉积法制备的掺氟二氧化锡(FTO)导电玻璃绒面(如图3所示);
3)低压化学气相沉积法制备的掺硼氧化锌(BZO)或氧化锌铝(AZO)导电玻璃绒面(如图4所示)。
同时,透明导电膜的绒面形态必须保证电池吸收层的薄膜材料品质不会受其不平整度的影响。由于电池的制备过程往往都是各层薄膜按次序叠加生长的,透明导电膜在吸收层生长时是作为吸收层的直接衬底,其形貌直接影响着吸收层薄膜的生长方式和质量。以微晶硅吸收层为例(如图5所示),不同的透明导电膜形貌造成了不同质地的微晶硅吸收层。
当透明导电膜绒面形貌类似V形时(图5A),微晶硅吸收层容易形成裂缝,严重影响太阳能电池的性能。当绒面形貌类似U形时(图5B),微晶硅吸收层裂缝较小,甚至无裂缝(图5C)。此外,碲化铬吸收层对绒面形貌的要求比微晶硅更加苛刻,要求绒面必须全部由较浅的U形凹陷构成。
以上三种现有绒面导电玻璃小规模样品中,只有磁控溅射后湿法刻蚀制备的AZO导电玻璃和低压化学气相沉积的BZO(或AZO)导电玻璃有可能达到U形绒面形貌的要求,但前者在工业化批量生产时遇到了湿法刻蚀工艺不易控制而造成的产品不均匀、不稳定、成品率低的问题,而后者则需要使用长时间的等离子体刻蚀工艺,工业化生产的成本过高。因此,适合于生产微晶硅、碲化铬薄膜电池的U形绒面导电玻璃的工业化低成本生产方法在全世界至今一直是个空白。正因为如此,微晶硅薄膜电池的生产成本仍然很高,而碲化铬薄膜电池在生产时不得不只使用几乎没有任何绒度的平面FTO导电玻璃。
发明内容
为了克服现有技术的缺点与不足,本发明的首要目的在于提供一种成本低廉的、具有均匀可控的纳米级U形绒面的大面积太阳能电池专用绒面导电玻璃。
本发明的另一目的在于提供上述太阳能电池专用绒面导电玻璃的制备方法,采用磁控溅射镀透明导电膜(ITO、AZO等),然后用浸镀的方法将纳/微米球(直径10纳米-100微米)吸附于其表面作为掩模,再通过磁控溅射在纳/微米球间隙增加透明导电膜厚度,最后用超声震动等机械或化学方法去除纳/微米球,实现大面积低成本制备具有U形绒面的导电玻璃。
本发明的再一目的在于提供上述太阳能电池专用绒面导电玻璃的应用。
本发明的目的通过下述技术方案实现:
一种太阳能电池专用绒面导电玻璃,其结构和组成是:在玻璃基片上镀有透明导电膜,透明导电膜的上表面是带有纳米级U形绒度的绒面;
所述的透明导电膜的厚度是100-5000纳米;
所述的透明导电膜是氧化铟锡(ITO)或氧化锌铝(AZO)或其它透明导电薄膜材料(等电点大于3)中的一种。
上述太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上透明导电膜,得到导电玻璃A;
(2)取单分散纳/微米球悬浮液,调节该悬浮液的pH值为3-7;将导电玻璃A浸入悬浮液中,浸泡2-15分钟,取出,用水冲洗,得到导电玻璃B;
由于ITO、AZO等透明导电膜的等电点(isoelectric point)比较大,一般为6-10,而二氧化硅或聚苯乙烯纳/微米球的等电点比较小,一般为2-4,因此当把导电玻璃浸泡于含有纳/微米球的中性(PH值为7)或弱酸性(PH值为3-6)的悬浮液中时,透明导电膜表面带负电,而纳/微米球表面带正电,造成两种材料互相静电吸引,经过一段时间后,透明导电膜表面几乎全部被一层纳/微米球所吸附。纳/微米球在导电玻璃上的覆盖面积比例随纳/微米球悬浮液的浓度、pH值和浸镀时间而变化。
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射方式镀上透明导电膜,得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为100-5000纳米;
第二次使用磁控溅射镀膜的原因是磁控溅射过程中镀膜材料可以进入纳/微米球的侧下方,形成无棱角的U形表面形貌(如图7所示)。
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,从而在导电玻璃C表面形成U形纳/微米大小的绒度,得到太阳能电池专用绒面导电玻璃。该导电玻璃在可见光波段的透过率为80%以上,面电阻小于10欧姆。
步骤(1)和(3)所述的磁控溅射,其条件如下:基础真空度:<1×10-5Torr;工作气压:1-10mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:100-1000W;衬底温度:20-500℃;沉积速率:10-100nm/min;
步骤(2)所述的纳/微米球的直径为10纳米-100微米;
步骤(2)所述的纳/微米球的材质是二氧化硅或聚苯乙烯中的一种;
步骤(2)所述的悬浮液中纳/微米球的质量体积浓度是0.01-1%;
步骤(2)所述的悬浮液的溶剂是水、甲醇或乙醇中一种;
步骤(2)所述的导电玻璃在悬浮液中的浸泡时间优选8-10分钟;
上述的太阳能电池专用绒面导电玻璃可以用作太阳能电池的透明电极或基板。
本发明所述的纳/微米球是指纳米球或微米球;所述的纳/微米是指纳米或微米。
本发明相对于现有技术具有如下的优点及效果:
从工业化生产的角度,本方法所使用的平板玻璃磁控溅射、浸镀、清洗等工艺均与标准工业生产工艺相匹配,生产效率高,可应用的玻璃面积大,重复性好,成品率高,且采用的纳/微米球制备成本低廉,十分适合于低成本高质量的太阳能电池专用导电玻璃的生产。
附图说明
图1是非晶硅薄膜电池的切面结构示意图。
图2是磁控溅射后用盐酸湿法刻蚀制备的氧化锌铝(AZO)导电玻璃绒面显微结构示意图。
图3是常压化学气相沉积法制备的掺氟二氧化锡(FTO)导电玻璃绒面显微结构示意图。
图4是低压化学气相沉积法制备的掺硼氧化锌(BZO)或氧化锌铝(AZO)导电玻璃绒面显微结构示意图。
图5是不同导电玻璃衬地上微晶硅薄膜的生长状态比较。
图6是本发明太阳能电池专用绒面导电玻璃的制备方法流程示意图。
图7是以纳/微米球为掩模进行磁控溅射镀膜时薄膜沉积的方式示意图。
图8是实施例1中镀上了纳/微米球的导电玻璃。
图9是实施例2中镀上了纳/微米球的导电玻璃。
图10是实施例3中镀上了纳/微米球的导电玻璃。
图11是实施例4中镀上了纳/微米球的导电玻璃。
图12是实施例5中镀上了纳/微米球的导电玻璃。
图13是实施例6中镀上了纳/微米球的导电玻璃。
图14是实施例1的导电玻璃去除纳米球后的表面形貌俯视图;A-放大倍数10000,B-放大倍数5000。
图15是实施例1的导电玻璃去除纳米球后的表面形貌30度倾角侧面图;A-放大倍数10000,B-放大倍数5000。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述,但本发明的实施方式不限于此。
实施例1
一种太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上AZO透明导电膜,得到导电玻璃A;磁控溅射的条件如下:基础真空度:0.8×10-5Torr;工作气压:1mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:1000W;衬底温度:20℃;沉积速率:100nm/min;
(2)取聚苯乙烯纳米球(直径1000纳米)在水中的悬浮液(质量体积浓度为0.25%),调节该悬浮液的pH值为4;将导电玻璃A浸入悬浮液中,浸泡2分钟,取出,用水轻轻冲洗,得到导电玻璃B;
图8可见导电玻璃B上浸镀了一层纳米球;
(3)利用纳米球作为掩模,在导电玻璃B上用磁控溅射的方式镀上AZO透明导电膜(磁控溅射的条件同步骤(1)),得到导电玻璃C,新镀的膜厚度不超过纳米球的半径,透明导电膜的总厚度为2000纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳米球;得到一种太阳能电池专用绒面导电玻璃。去除纳米球之后导电玻璃表面形貌如图14和图15所示,绒面形貌的凹陷区率较大,呈明显的U形,且在导电玻璃的表面分布均匀;该导电玻璃在可见光波段的透过率为82%、面电阻3欧姆,可以用作太阳能电池的透明电极或基板。
实施例2
一种太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上AZO透明导电膜,得到导电玻璃A;磁控溅射的条件如下:基础真空度:0.7×10-5Torr;工作气压:10mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:100W;衬底温度:500℃;沉积速率:10nm/min;
(2)取二氧化硅纳米球(直径1000纳米)在乙醇中的悬浮液(质量体积浓度为0.5%),调节该悬浮液的pH值为7;将导电玻璃A浸入悬浮液中,浸泡4分钟,取出,用水轻轻冲洗,得到导电玻璃B;
图9可见导电玻璃B上浸镀了一层纳米球;
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射的方式镀上AZO透明导电膜(磁控溅射的条件同步骤(1)),得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为3000纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,从而在导电玻璃表面C形成U形纳/微米大小的绒度,得到太阳能电池专用绒面导电玻璃,该导电玻璃在可见光波段的透过率为83%、面电阻4欧姆,可以用作太阳能电池的透明电极或基板。
实施例3
一种太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上ITO透明导电膜,得到导电玻璃A,磁控溅射的条件如下:基础真空度:0.9×10-5Torr;工作气压:4mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:800W;衬底温度:100℃;沉积速率:80nm/min;
(2)取聚苯乙烯纳米球(直径1000纳米)在水中的悬浮液(质量体积浓度为0.1%),调节该悬浮液的pH值为6;将导电玻璃A浸入悬浮液中,浸泡6分钟,取出,用水轻轻冲洗,得到导电玻璃B;
图10可见导电玻璃B上浸镀了一层纳米球;
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射的方式镀上ITO透明导电膜(磁控溅射的条件同步骤(1)),得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为1000纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,从而在导电玻璃C表面形成U形纳/微米大小的绒度,得到太阳能电池专用绒面导电玻璃,该导电玻璃在可见光波段的透过率为81%、面电阻2欧姆,可以用作太阳能电池的透明电极或基板。
实施例4
一种太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上AZO透明导电膜,得到导电玻璃A,磁控溅射的条件如下:基础真空度:0.5×10-5Torr;工作气压:6mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:200W;衬底温度:400℃;沉积速率:40nm/min;
(2)取聚苯乙烯纳米球(直径1000纳米)在水中的悬浮液(质量体积浓度为0.75%),调节该悬浮液的pH值为3;将导电玻璃A浸入悬浮液中,浸泡8分钟,取出,用水轻轻冲洗,得到导电玻璃B;
图11可见导电玻璃B上浸镀了一层纳米球,覆盖率达到90%以上。
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射的方式镀上AZO透明导电膜(磁控溅射的条件同步骤(1)),得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为100纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,从而在导电玻璃C表面形成U形纳/微米大小的绒度,得到太阳能电池专用绒面导电玻璃,该导电玻璃在可见光波段的透过率为84%、面电阻5欧姆,可以用作太阳能电池的透明电极或基板。
实施例5
一种太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上AZO透明导电膜,得到导电玻璃A,磁控溅射的条件如下:基础真空度:0.6×10-5Torr;工作气压:8mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:400W;衬底温度:300℃;沉积速率:20nm/min;
(2)取聚苯乙烯纳米球(直径1000纳米)在甲醇中的悬浮液(质量体积浓度为1%),调节该悬浮液的pH值为3;将导电玻璃A浸入悬浮液中,浸泡10分钟,取出,用水轻轻冲洗,得到导电玻璃B;
图12可见导电玻璃B上浸镀了一层纳米球,覆盖率达到90%以上。
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射的方式镀上AZO透明导电膜(磁控溅射的条件同步骤(1)),得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为5000纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,从而在导电玻璃C表面形成U形纳/微米大小的绒度,得到太阳能电池专用绒面导电玻璃,该导电玻璃在可见光波段的透过率为82%、面电阻3欧姆,可以用作太阳能电池的透明电极或基板。
实施例6
一种太阳能电池专用绒面导电玻璃的制备方法,包括以下步骤(如图6所示):
(1)采用磁控溅射方式在玻璃基片上镀上AZO透明导电膜,得到导电玻璃A,磁控溅射的条件如下:基础真空度:0.4×10-5Torr;工作气压:2mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:600W;衬底温度:200℃;沉积速率:60nm/min;
(2)取聚苯乙烯纳米球(直径1000纳米)在甲醇中的悬浮液(质量体积浓度为0.01%),调节该悬浮液的pH值为4;将导电玻璃A浸入悬浮液中,浸泡15分钟,取出,用水轻轻冲洗,得到导电玻璃B;
图13可见导电玻璃B上浸镀了一层纳米球;
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射的方式镀上AZO透明导电膜(磁控溅射的条件同步骤(1)),得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为4000纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,从而在导电玻璃C表面形成U形纳/微米大小的绒度,得到太阳能电池专用绒面导电玻璃,该导电玻璃在可见光波段的透过率为82%、面电阻3欧姆,可以用作太阳能电池的透明电极或基板。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。

Claims (10)

1.一种太阳能电池专用绒面导电玻璃,其特征在于:在玻璃基片上镀有透明导电膜,透明导电膜的上表面是带有纳/微米级U形绒度的绒面。
2.根据权利要求1所述的太阳能电池专用绒面导电玻璃,其特征在于:所述的透明导电膜的厚度为100-5000纳米。
3.根据权利要求1或2所述的太阳能电池专用绒面导电玻璃,其特征在于:所述的透明导电膜是氧化铟锡或氧化锌铝中的一种。
4.权利要求1所述的太阳能电池专用绒面导电玻璃的制备方法,其特征在于包括以下步骤:
(1)采用磁控溅射方式在玻璃基片上镀上透明导电膜,得到导电玻璃A;
(2)取纳/微米球悬浮液,调节该悬浮液的pH值为3-7;将导电玻璃A浸入悬浮液中,浸泡2-15分钟,取出,用水冲洗,得到导电玻璃B;
(3)利用纳/微米球作为掩模,在导电玻璃B上用磁控溅射方式镀上透明导电膜,得到导电玻璃C,新镀的膜厚度不超过纳/微米球的半径,透明导电膜的总厚度为100-5000纳米;
(4)超声清洗去除沉积在透明导电膜表面的纳/微米球,得到太阳能电池专用绒面导电玻璃。
5.根据权利要求4所述的太阳能电池专用绒面导电玻璃的制备方法,其特征在于:步骤(1)和(3)所述的磁控溅射,其条件如下:基础真空度:<1×10-5Torr;工作气压:1-10mTorr;工作气体:Ar+O2;溅射源:支流或射频13.56MHz;功率:100-1000W;衬底温度:20-500℃;沉积速率:10-100nm/min。
6.根据权利要求4所述的太阳能电池专用绒面导电玻璃的制备方法,其特征在于:步骤(2)所述的纳/微米球的直径为10纳米-100微米。
7.根据权利要求4所述的太阳能电池专用绒面导电玻璃的制备方法,其特征在于:步骤(2)所述的纳/微米球的材质是二氧化硅或聚苯乙烯中的一种。
8.根据权利要求4所述的太阳能电池专用绒面导电玻璃的制备方法,其特征在于:
步骤(2)所述的悬浮液中纳/微米球的质量体积浓度是0.01-1%;
步骤(2)所述的悬浮液的溶剂是水、甲醇或乙醇中一种。
9.根据权利要求4所述的太阳能电池专用绒面导电玻璃的制备方法,其特征在于:步骤(2)所述的导电玻璃在悬浮液中的浸泡时间为8-10分钟。
10.权利要求1所述的太阳能电池专用绒面导电玻璃作为太阳能电池透明电极或基板的应用。
CN2011101412768A 2011-05-28 2011-05-28 一种太阳能电池专用绒面导电玻璃及其制备方法与应用 Active CN102254961B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN2011101412768A CN102254961B (zh) 2011-05-28 2011-05-28 一种太阳能电池专用绒面导电玻璃及其制备方法与应用
EP12793834.8A EP2717320B1 (en) 2011-05-28 2012-02-09 Preparation method for surface-textured conductive glass and its application for solar cells
JP2013525133A JP5734431B2 (ja) 2011-05-28 2012-02-09 太陽電池専用の表面凹凸付き導電ガラスとその製造方法及び応用
PCT/CN2012/070984 WO2012163101A1 (zh) 2011-05-28 2012-02-09 一种太阳能电池专用绒面导电玻璃及其制备方法与应用
KR1020137017506A KR101510578B1 (ko) 2011-05-28 2012-02-09 태양전지용 표면처리 도전성 유리 제조 방법
PT127938348T PT2717320T (pt) 2011-05-28 2012-02-09 Método de preparação para vidro condutor de superfície texturizada e a sua aplicação para células solares
US13/822,485 US20140174521A1 (en) 2011-05-28 2012-09-02 Surface-textured conductive glass for solar cells, and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101412768A CN102254961B (zh) 2011-05-28 2011-05-28 一种太阳能电池专用绒面导电玻璃及其制备方法与应用

Publications (2)

Publication Number Publication Date
CN102254961A true CN102254961A (zh) 2011-11-23
CN102254961B CN102254961B (zh) 2013-01-02

Family

ID=44982082

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101412768A Active CN102254961B (zh) 2011-05-28 2011-05-28 一种太阳能电池专用绒面导电玻璃及其制备方法与应用

Country Status (7)

Country Link
US (1) US20140174521A1 (zh)
EP (1) EP2717320B1 (zh)
JP (1) JP5734431B2 (zh)
KR (1) KR101510578B1 (zh)
CN (1) CN102254961B (zh)
PT (1) PT2717320T (zh)
WO (1) WO2012163101A1 (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012163101A1 (zh) * 2011-05-28 2012-12-06 惠州市易晖太阳能科技有限公司 一种太阳能电池专用绒面导电玻璃及其制备方法与应用
CN103367479A (zh) * 2013-07-03 2013-10-23 惠州市易晖太阳能科技有限公司 一种柔性太阳能电池绒面导电衬底及其制备方法
CN103570849A (zh) * 2013-10-15 2014-02-12 惠州市易晖太阳能科技有限公司 一种应用于新型绒面导电玻璃的聚苯乙烯纳米球的制备方法
CN104756229A (zh) * 2012-10-26 2015-07-01 原子能和替代能源委员会 用于生产半导体结构的方法
CN107611187A (zh) * 2017-09-06 2018-01-19 蚌埠玻璃工业设计研究院 一种绒面多层膜透明导电玻璃
CN107611188A (zh) * 2017-09-06 2018-01-19 蚌埠玻璃工业设计研究院 一种具有微结构的多层膜透明导电玻璃制备方法
CN107910383A (zh) * 2017-10-09 2018-04-13 华南师范大学 一种金属网状导电膜的制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956395B (zh) * 2014-05-09 2017-11-10 中国科学院宁波材料技术与工程研究所 阵列结构绒面及其制法和应用
US9202953B1 (en) * 2014-05-16 2015-12-01 National Cheng Kung University Method for manufacturing solar cell with nano-structural film
CN105355673B (zh) * 2015-10-23 2017-11-28 辽宁科技大学 一种双结构绒面azo透明导电薄膜及其制备方法
CN112599644B (zh) * 2020-11-26 2022-09-30 佛山汉狮建材科技有限公司 一种用于电动帘的光能板及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137291A2 (en) * 1983-09-26 1985-04-17 Kabushiki Kaisha Komatsu Seisakusho Amorphous silicon solar cells
JPH0521826A (ja) * 1991-07-16 1993-01-29 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
CN101582331A (zh) * 2009-05-27 2009-11-18 彩虹集团公司 一种大表面积染料敏化太阳能电池铂对电极的制备方法
CN101765942A (zh) * 2007-07-25 2010-06-30 综研化学株式会社 染料敏化太阳能电池

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4808462A (en) * 1987-05-22 1989-02-28 Glasstech Solar, Inc. Solar cell substrate
JP3801342B2 (ja) * 1998-02-12 2006-07-26 シャープ株式会社 太陽電池用基板、その製造方法及び半導体素子
JP4017281B2 (ja) * 1999-03-23 2007-12-05 三洋電機株式会社 太陽電池及びその製造方法
JP2001007363A (ja) * 1999-06-18 2001-01-12 Nippon Sheet Glass Co Ltd 太陽電池用透明電極付きガラス
JP2003221256A (ja) * 2002-01-31 2003-08-05 Nippon Sheet Glass Co Ltd ガラス基板
KR100728194B1 (ko) * 2005-11-11 2007-06-13 삼성에스디아이 주식회사 염료 감응형 태양 전지 및 이의 제조 방법
EP1830412A1 (en) * 2006-03-03 2007-09-05 Atomic Energy Council - Institute of Nuclear Energy Research Method for fabricating an optical sensitive layer of a solar cell having silicon quantum dots
JPWO2008111202A1 (ja) * 2007-03-14 2010-06-24 パイオニア株式会社 有機太陽電池の製造方法、有機太陽電池の製造方法により製造された有機太陽電池及び、有機太陽電池
JP5088778B2 (ja) * 2007-08-01 2012-12-05 株式会社プライマテック 微細凹凸表面を有する表面加工基板の製造方法
CN102254961B (zh) * 2011-05-28 2013-01-02 惠州市易晖太阳能科技有限公司 一种太阳能电池专用绒面导电玻璃及其制备方法与应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137291A2 (en) * 1983-09-26 1985-04-17 Kabushiki Kaisha Komatsu Seisakusho Amorphous silicon solar cells
JPH0521826A (ja) * 1991-07-16 1993-01-29 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
CN101765942A (zh) * 2007-07-25 2010-06-30 综研化学株式会社 染料敏化太阳能电池
CN101582331A (zh) * 2009-05-27 2009-11-18 彩虹集团公司 一种大表面积染料敏化太阳能电池铂对电极的制备方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012163101A1 (zh) * 2011-05-28 2012-12-06 惠州市易晖太阳能科技有限公司 一种太阳能电池专用绒面导电玻璃及其制备方法与应用
CN104756229A (zh) * 2012-10-26 2015-07-01 原子能和替代能源委员会 用于生产半导体结构的方法
CN104756229B (zh) * 2012-10-26 2020-06-30 原子能和替代能源委员会 用于生产半导体结构的方法
CN103367479A (zh) * 2013-07-03 2013-10-23 惠州市易晖太阳能科技有限公司 一种柔性太阳能电池绒面导电衬底及其制备方法
CN103570849A (zh) * 2013-10-15 2014-02-12 惠州市易晖太阳能科技有限公司 一种应用于新型绒面导电玻璃的聚苯乙烯纳米球的制备方法
CN107611187A (zh) * 2017-09-06 2018-01-19 蚌埠玻璃工业设计研究院 一种绒面多层膜透明导电玻璃
CN107611188A (zh) * 2017-09-06 2018-01-19 蚌埠玻璃工业设计研究院 一种具有微结构的多层膜透明导电玻璃制备方法
CN107910383A (zh) * 2017-10-09 2018-04-13 华南师范大学 一种金属网状导电膜的制备方法

Also Published As

Publication number Publication date
EP2717320A4 (en) 2015-01-07
WO2012163101A1 (zh) 2012-12-06
KR20130101121A (ko) 2013-09-12
JP2013536584A (ja) 2013-09-19
EP2717320B1 (en) 2019-09-11
CN102254961B (zh) 2013-01-02
PT2717320T (pt) 2020-01-06
US20140174521A1 (en) 2014-06-26
EP2717320A1 (en) 2014-04-09
KR101510578B1 (ko) 2015-04-08
JP5734431B2 (ja) 2015-06-17

Similar Documents

Publication Publication Date Title
CN102254961B (zh) 一种太阳能电池专用绒面导电玻璃及其制备方法与应用
CN104681645A (zh) 一种基于金属网格和金属纳米线制备复合透明导电电极的方法
CN103227240A (zh) 一种基于龟裂模板法制备多孔金属薄膜透明导电电极的方法
US20110126890A1 (en) Textured superstrates for photovoltaics
CN111584647A (zh) 一种光伏组件用黄色前板玻璃及其制备的黄色光伏组件
CN101593791B (zh) 光伏器件的制造方法
CN111477710A (zh) 一种光伏组件用蓝色前板玻璃及其制备的蓝色光伏组件
CN101497992A (zh) 用等离子体轰击制备绒面氧化锌透明导电镀膜玻璃的方法
CN101654331A (zh) 一种制备绒面ZnO透明导电镀膜玻璃的方法
CN202137995U (zh) 一种透明导电膜玻璃
CN102837467B (zh) 一种透明导电膜玻璃及其制备方法
WO2006098185A1 (ja) 薄膜光電変換装置用基板の製造方法、及び薄膜光電変換装置
CN108179389B (zh) 一种用于汽车玻璃的光谱选择性ito薄膜的制备方法
CN102741446A (zh) 用铝掺杂的氧化锌涂覆基材的方法
CN103367479A (zh) 一种柔性太阳能电池绒面导电衬底及其制备方法
US20180247726A1 (en) Sputtered transparent conductive aluminum doped zinc oxide films
CN101792270B (zh) 一种透明导电膜玻璃及其制造方法
CN102220562B (zh) 一种绒面结构氧化锌透明导电薄膜的制备方法
CN111584652A (zh) 一种光伏组件用绿色前板玻璃及其制备的绿色光伏组件
CN103204633B (zh) 一种具有多种刻蚀模式的刻蚀系统
CN103183480A (zh) Azo镀膜玻璃的制备方法
CN103647001B (zh) 一种绒面透明导电膜及其制备方法
CN102891216B (zh) 一种双结构绒面ZnO基透明导电薄膜的制备方法
CN103203912B (zh) 一种新型azo镀膜玻璃及其制备工艺
CN111560602B (zh) 一种氧化物薄膜表面复合的优化方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: HUIZHOU E-FLY ENERGY TECHNOLOGY CO., LTD.

Free format text: FORMER NAME: HUIZHOU YIHUI SOLAR ENERGY TECHNOLOGY CO.,LTD.

CP03 Change of name, title or address

Address after: 516025 Guangdong city of Huizhou province huiao Avenue South High-tech Industrial Park Huatai Road No. 1

Patentee after: HUIZHOU E-FLY ENERGY TECHNOLOGY CO., LTD.

Address before: 516006 Guangdong province Huizhou City Zhongkai high tech Zone Huifeng two East Road No. 16 304-2

Patentee before: Huizhou Yihui Solar Energy Technology Co., Ltd.

C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 516025 Guangdong city of Huizhou province huiao Avenue South High-tech Industrial Park Huatai Road No. 1

Patentee after: Huizhou Yi Hui photoelectric materials Limited by Share Ltd

Address before: 516025 Guangdong city of Huizhou province huiao Avenue South High-tech Industrial Park Huatai Road No. 1

Patentee before: HUIZHOU E-FLY ENERGY TECHNOLOGY CO., LTD.