CN102254840A - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
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- CN102254840A CN102254840A CN2010101829998A CN201010182999A CN102254840A CN 102254840 A CN102254840 A CN 102254840A CN 2010101829998 A CN2010101829998 A CN 2010101829998A CN 201010182999 A CN201010182999 A CN 201010182999A CN 102254840 A CN102254840 A CN 102254840A
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- semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010101829998A CN102254840A (zh) | 2010-05-18 | 2010-05-18 | 半导体结构及其制造方法 |
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CN2010101829998A CN102254840A (zh) | 2010-05-18 | 2010-05-18 | 半导体结构及其制造方法 |
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CN102254840A true CN102254840A (zh) | 2011-11-23 |
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CN2010101829998A Pending CN102254840A (zh) | 2010-05-18 | 2010-05-18 | 半导体结构及其制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640721A (zh) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | 一种芯片封装体的制备方法 |
CN111640734A (zh) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | 一种芯片封装体 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119401A (ja) * | 1988-10-28 | 1990-05-07 | Mitsubishi Electric Corp | マイクロ波集積回路 |
JPH0864234A (ja) * | 1994-08-23 | 1996-03-08 | Canon Inc | 二次電池及びその製造方法 |
US20040016940A1 (en) * | 2002-07-24 | 2004-01-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
KR20040075179A (ko) * | 2003-02-20 | 2004-08-27 | 엘지전자 주식회사 | 화합물 반도체 소자의 제조방법 |
CN1992151A (zh) * | 2005-12-28 | 2007-07-04 | 三洋电机株式会社 | 半导体装置的制造方法 |
CN101207101A (zh) * | 2006-12-19 | 2008-06-25 | 育霈科技股份有限公司 | 用于干刻蚀的图案屏蔽结构及其方法 |
CN101563773A (zh) * | 2006-12-20 | 2009-10-21 | 英特尔公司 | 用于将现有硅管芯结合到3d集成叠置体中的方法 |
US20090278244A1 (en) * | 2008-05-12 | 2009-11-12 | Texas Instruments Inc | Ic device having low resistance tsv comprising ground connection |
TW201011875A (en) * | 2008-09-09 | 2010-03-16 | Lsi Corp | Package with power and ground through via |
-
2010
- 2010-05-18 CN CN2010101829998A patent/CN102254840A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119401A (ja) * | 1988-10-28 | 1990-05-07 | Mitsubishi Electric Corp | マイクロ波集積回路 |
JPH0864234A (ja) * | 1994-08-23 | 1996-03-08 | Canon Inc | 二次電池及びその製造方法 |
US20040016940A1 (en) * | 2002-07-24 | 2004-01-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
KR20040075179A (ko) * | 2003-02-20 | 2004-08-27 | 엘지전자 주식회사 | 화합물 반도체 소자의 제조방법 |
CN1992151A (zh) * | 2005-12-28 | 2007-07-04 | 三洋电机株式会社 | 半导体装置的制造方法 |
CN101207101A (zh) * | 2006-12-19 | 2008-06-25 | 育霈科技股份有限公司 | 用于干刻蚀的图案屏蔽结构及其方法 |
CN101563773A (zh) * | 2006-12-20 | 2009-10-21 | 英特尔公司 | 用于将现有硅管芯结合到3d集成叠置体中的方法 |
US20090278244A1 (en) * | 2008-05-12 | 2009-11-12 | Texas Instruments Inc | Ic device having low resistance tsv comprising ground connection |
TW201011875A (en) * | 2008-09-09 | 2010-03-16 | Lsi Corp | Package with power and ground through via |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640721A (zh) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | 一种芯片封装体的制备方法 |
CN111640734A (zh) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | 一种芯片封装体 |
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