CN102244100B - Mos功率半导体器件 - Google Patents
Mos功率半导体器件 Download PDFInfo
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- CN102244100B CN102244100B CN201110176519.1A CN201110176519A CN102244100B CN 102244100 B CN102244100 B CN 102244100B CN 201110176519 A CN201110176519 A CN 201110176519A CN 102244100 B CN102244100 B CN 102244100B
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- power semiconductor
- mos power
- unit cell
- transistor unit
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110176519.1A CN102244100B (zh) | 2011-06-28 | 2011-06-28 | Mos功率半导体器件 |
Applications Claiming Priority (1)
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CN201110176519.1A CN102244100B (zh) | 2011-06-28 | 2011-06-28 | Mos功率半导体器件 |
Publications (2)
Publication Number | Publication Date |
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CN102244100A CN102244100A (zh) | 2011-11-16 |
CN102244100B true CN102244100B (zh) | 2016-01-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110176519.1A Active CN102244100B (zh) | 2011-06-28 | 2011-06-28 | Mos功率半导体器件 |
Country Status (1)
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CN (1) | CN102244100B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4727408A (en) * | 1984-06-11 | 1988-02-23 | Nec Corporation | Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor |
US4823176A (en) * | 1987-04-03 | 1989-04-18 | General Electric Company | Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
CN1389918A (zh) * | 2001-06-04 | 2003-01-08 | 松下电器产业株式会社 | 高耐压半导体装置 |
CN1391289A (zh) * | 2001-06-12 | 2003-01-15 | 富士电机株式会社 | 半导体器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100764A (en) * | 1980-12-16 | 1982-06-23 | Toshiba Corp | Semiconductor device |
US4613885A (en) * | 1982-02-01 | 1986-09-23 | Texas Instruments Incorporated | High-voltage CMOS process |
JPS63252480A (ja) * | 1987-04-09 | 1988-10-19 | Mitsubishi Electric Corp | 縦形モス電界効果トランジスタ |
JP2504862B2 (ja) * | 1990-10-08 | 1996-06-05 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US5304831A (en) * | 1990-12-21 | 1994-04-19 | Siliconix Incorporated | Low on-resistance power MOS technology |
US6555894B2 (en) * | 1998-04-20 | 2003-04-29 | Intersil Americas Inc. | Device with patterned wells and method for forming same |
JP2007134421A (ja) * | 2005-11-09 | 2007-05-31 | Sansha Electric Mfg Co Ltd | パワーmosfet、igbtなどの縦型半導体装置とその製造方法 |
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2011
- 2011-06-28 CN CN201110176519.1A patent/CN102244100B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4727408A (en) * | 1984-06-11 | 1988-02-23 | Nec Corporation | Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor |
US4823176A (en) * | 1987-04-03 | 1989-04-18 | General Electric Company | Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
CN1389918A (zh) * | 2001-06-04 | 2003-01-08 | 松下电器产业株式会社 | 高耐压半导体装置 |
CN1391289A (zh) * | 2001-06-12 | 2003-01-15 | 富士电机株式会社 | 半导体器件 |
Also Published As
Publication number | Publication date |
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CN102244100A (zh) | 2011-11-16 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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