CN208045509U - 低漏电流深沟槽功率mos器件 - Google Patents
低漏电流深沟槽功率mos器件 Download PDFInfo
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- CN208045509U CN208045509U CN201721813698.4U CN201721813698U CN208045509U CN 208045509 U CN208045509 U CN 208045509U CN 201721813698 U CN201721813698 U CN 201721813698U CN 208045509 U CN208045509 U CN 208045509U
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 55
- 229920005591 polysilicon Polymers 0.000 claims abstract description 36
- 230000005516 deep trap Effects 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 13
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 10
- 229910008814 WSi2 Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 69
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
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Application Number | Priority Date | Filing Date | Title |
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CN201721813698.4U CN208045509U (zh) | 2017-12-22 | 2017-12-22 | 低漏电流深沟槽功率mos器件 |
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CN201721813698.4U CN208045509U (zh) | 2017-12-22 | 2017-12-22 | 低漏电流深沟槽功率mos器件 |
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CN208045509U true CN208045509U (zh) | 2018-11-02 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111180342A (zh) * | 2020-02-18 | 2020-05-19 | 中芯集成电路制造(绍兴)有限公司 | 屏蔽栅场效应晶体管及其形成方法 |
CN113851533A (zh) * | 2020-06-28 | 2021-12-28 | 苏州硅能半导体科技股份有限公司 | 低功耗垂直功率mos器件 |
-
2017
- 2017-12-22 CN CN201721813698.4U patent/CN208045509U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111180342A (zh) * | 2020-02-18 | 2020-05-19 | 中芯集成电路制造(绍兴)有限公司 | 屏蔽栅场效应晶体管及其形成方法 |
CN113851533A (zh) * | 2020-06-28 | 2021-12-28 | 苏州硅能半导体科技股份有限公司 | 低功耗垂直功率mos器件 |
CN113851533B (zh) * | 2020-06-28 | 2023-08-22 | 苏州硅能半导体科技股份有限公司 | 低功耗垂直功率mos器件 |
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GR01 | Patent grant | ||
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Effective date of registration: 20240205 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: Zhong Guo Address before: Room 501, Building NW20, Suzhou Nano City, No. 99 Jinjihu Avenue, Industrial Park, Suzhou City, Jiangsu Province, 215123 Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: Zhong Guo |
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Effective date of registration: 20240319 Address after: Room 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: Zhong Guo Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: Zhong Guo |