CN107994067B - 半导体功率器件、半导体功率器件的终端结构及其制作方法 - Google Patents
半导体功率器件、半导体功率器件的终端结构及其制作方法 Download PDFInfo
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- CN107994067B CN107994067B CN201711299201.6A CN201711299201A CN107994067B CN 107994067 B CN107994067 B CN 107994067B CN 201711299201 A CN201711299201 A CN 201711299201A CN 107994067 B CN107994067 B CN 107994067B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000002347 injection Methods 0.000 claims abstract description 104
- 239000007924 injection Substances 0.000 claims abstract description 104
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims description 26
- 238000002513 implantation Methods 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000007943 implant Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711299201.6A CN107994067B (zh) | 2017-12-08 | 2017-12-08 | 半导体功率器件、半导体功率器件的终端结构及其制作方法 |
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CN201711299201.6A CN107994067B (zh) | 2017-12-08 | 2017-12-08 | 半导体功率器件、半导体功率器件的终端结构及其制作方法 |
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CN107994067A CN107994067A (zh) | 2018-05-04 |
CN107994067B true CN107994067B (zh) | 2020-08-28 |
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CN201711299201.6A Active CN107994067B (zh) | 2017-12-08 | 2017-12-08 | 半导体功率器件、半导体功率器件的终端结构及其制作方法 |
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CN110211957B (zh) * | 2019-06-24 | 2024-06-11 | 南京华瑞微集成电路有限公司 | 一种双管芯器件及其制作方法 |
CN114695557B (zh) * | 2022-03-31 | 2024-02-09 | 博研嘉信(北京)科技有限公司 | 一种锂电池充电管理的vdmos器件及其制备方法 |
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JP4955222B2 (ja) * | 2005-05-20 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
TWI614898B (zh) * | 2013-12-06 | 2018-02-11 | 達爾國際股份有限公司 | 終止區結構及其製造方法 |
US9178015B2 (en) * | 2014-01-10 | 2015-11-03 | Vishay General Semiconductor Llc | Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications |
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Effective date of registration: 20200728 Address after: 318050 Licun, Luqiao, Taizhou, Zhejiang Province, 38 Applicant after: Li Youhong Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community Junfeng Industrial Zone A3 building the first floor Applicant before: SHENZHEN JINGTE SMART MANUFACTURING TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220909 Address after: 518055 408, 4th floor, Rainbow Technology Building, No. 36, Gaoxin North 6th Road, songpingshan community, Xili street, Nanshan District, Shenzhen, Guangdong Province Patentee after: Huayan Weifu Technology (Shenzhen) Co.,Ltd. Address before: 318050 Licun, Luqiao, Taizhou, Zhejiang Province, 38 Patentee before: Li Youhong |