CN102239552B - 具有接合垫下方的沟槽的特征的rf器件和方法 - Google Patents

具有接合垫下方的沟槽的特征的rf器件和方法 Download PDF

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Publication number
CN102239552B
CN102239552B CN200980148878.7A CN200980148878A CN102239552B CN 102239552 B CN102239552 B CN 102239552B CN 200980148878 A CN200980148878 A CN 200980148878A CN 102239552 B CN102239552 B CN 102239552B
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region
bond pad
substrate
active device
inclusion
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CN200980148878.7A
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Chinese (zh)
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CN102239552A (zh
Inventor
杰弗里·K·琼斯
玛格丽特·A·希马诺夫斯基
米歇尔·L·米耶拉
任小伟
韦恩·R·布格尔
马克·A·贝内特
科林·克尔
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN200980148878.7A 2008-12-04 2009-11-25 具有接合垫下方的沟槽的特征的rf器件和方法 Active CN102239552B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/328,319 US7998852B2 (en) 2008-12-04 2008-12-04 Methods for forming an RF device with trench under bond pad feature
US12/328,319 2008-12-04
PCT/US2009/065902 WO2010065415A2 (en) 2008-12-04 2009-11-25 Rf device and method with trench under bond pad feature

Publications (2)

Publication Number Publication Date
CN102239552A CN102239552A (zh) 2011-11-09
CN102239552B true CN102239552B (zh) 2014-03-12

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CN200980148878.7A Active CN102239552B (zh) 2008-12-04 2009-11-25 具有接合垫下方的沟槽的特征的rf器件和方法

Country Status (5)

Country Link
US (2) US7998852B2 (https=)
JP (1) JP5637632B2 (https=)
CN (1) CN102239552B (https=)
TW (1) TWI475653B (https=)
WO (1) WO2010065415A2 (https=)

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* Cited by examiner, † Cited by third party
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US8115321B2 (en) * 2009-04-30 2012-02-14 Lsi Corporation Separate probe and bond regions of an integrated circuit
US8492260B2 (en) * 2010-08-30 2013-07-23 Semionductor Components Industries, LLC Processes of forming an electronic device including a feature in a trench
US8242613B2 (en) 2010-09-01 2012-08-14 Freescale Semiconductor, Inc. Bond pad for semiconductor die
US9614590B2 (en) 2011-05-12 2017-04-04 Keyssa, Inc. Scalable high-bandwidth connectivity
JP5844472B2 (ja) 2011-09-15 2016-01-20 ケッサ・インコーポレーテッド 誘電媒体による無線通信
US8649820B2 (en) 2011-11-07 2014-02-11 Blackberry Limited Universal integrated circuit card apparatus and related methods
US9559790B2 (en) 2012-01-30 2017-01-31 Keyssa, Inc. Link emission control
USD703208S1 (en) 2012-04-13 2014-04-22 Blackberry Limited UICC apparatus
US8936199B2 (en) 2012-04-13 2015-01-20 Blackberry Limited UICC apparatus and related methods
USD701864S1 (en) * 2012-04-23 2014-04-01 Blackberry Limited UICC apparatus
JP6154583B2 (ja) * 2012-06-14 2017-06-28 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
US8981533B2 (en) 2012-09-13 2015-03-17 Semiconductor Components Industries, Llc Electronic device including a via and a conductive structure, a process of forming the same, and an interposer
US9812354B2 (en) 2015-05-15 2017-11-07 Semiconductor Components Industries, Llc Process of forming an electronic device including a material defining a void
CN108313975B (zh) 2017-01-16 2019-12-13 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US10896888B2 (en) * 2018-03-15 2021-01-19 Microchip Technology Incorporated Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030146490A1 (en) * 2002-02-07 2003-08-07 Semiconductor Components Industries, Llc. Semiconductor device and method of providing regions of low substrate capacitance
US6621136B2 (en) * 2001-09-28 2003-09-16 Semiconductor Components Industries Llc Semiconductor device having regions of low substrate capacitance
CN1655338A (zh) * 2004-02-09 2005-08-17 半导体元件工业有限责任公司 具有减小的衬底电容的半导体器件和方法

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US4139442A (en) * 1977-09-13 1979-02-13 International Business Machines Corporation Reactive ion etching method for producing deep dielectric isolation in silicon
JPS63283040A (ja) 1987-05-15 1988-11-18 Toshiba Corp 半導体装置
US5190889A (en) * 1991-12-09 1993-03-02 Motorola, Inc. Method of forming trench isolation structure with germanium silicate filling
US5217919A (en) * 1992-03-19 1993-06-08 Harris Corporation Method of forming island with polysilicon-filled trench isolation
US5382541A (en) * 1992-08-26 1995-01-17 Harris Corporation Method for forming recessed oxide isolation containing deep and shallow trenches
JPH07106511A (ja) * 1993-10-05 1995-04-21 Hitachi Ltd 半導体集積回路装置
US5707894A (en) * 1995-10-27 1998-01-13 United Microelectronics Corporation Bonding pad structure and method thereof
US5933746A (en) * 1996-04-23 1999-08-03 Harris Corporation Process of forming trench isolation device
JP3634106B2 (ja) * 1997-03-19 2005-03-30 富士通株式会社 半導体装置及びその製造方法
KR19990055422A (ko) * 1997-12-27 1999-07-15 정선종 실리콘 기판에서의 인덕터 장치 및 그 제조 방법
US5986343A (en) * 1998-05-04 1999-11-16 Lucent Technologies Inc. Bond pad design for integrated circuits
US6271100B1 (en) * 2000-02-24 2001-08-07 International Business Machines Corporation Chemically enhanced anneal for removing trench stress resulting in improved bipolar yield
JP2003179148A (ja) * 2001-10-04 2003-06-27 Denso Corp 半導体基板およびその製造方法
US6869884B2 (en) * 2002-08-22 2005-03-22 Chartered Semiconductor Manufacturing Ltd. Process to reduce substrate effects by forming channels under inductor devices and around analog blocks
KR100621884B1 (ko) * 2004-02-09 2006-09-14 삼성전자주식회사 보이드를 갖는 트렌치 구조 및 이를 포함하는 인덕터
US7157734B2 (en) * 2005-05-27 2007-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor bond pad structures and methods of manufacturing thereof
JP2008147269A (ja) * 2006-12-07 2008-06-26 Sanyo Electric Co Ltd 半導体装置及びその製造方法

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Publication number Priority date Publication date Assignee Title
US6621136B2 (en) * 2001-09-28 2003-09-16 Semiconductor Components Industries Llc Semiconductor device having regions of low substrate capacitance
US20030146490A1 (en) * 2002-02-07 2003-08-07 Semiconductor Components Industries, Llc. Semiconductor device and method of providing regions of low substrate capacitance
CN1655338A (zh) * 2004-02-09 2005-08-17 半导体元件工业有限责任公司 具有减小的衬底电容的半导体器件和方法

Also Published As

Publication number Publication date
US8134241B2 (en) 2012-03-13
CN102239552A (zh) 2011-11-09
US7998852B2 (en) 2011-08-16
TW201030912A (en) 2010-08-16
US20110266687A1 (en) 2011-11-03
TWI475653B (zh) 2015-03-01
WO2010065415A3 (en) 2010-08-12
US20100140814A1 (en) 2010-06-10
JP2012511257A (ja) 2012-05-17
JP5637632B2 (ja) 2014-12-10
WO2010065415A2 (en) 2010-06-10

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