CN102222719B - 太阳能电池用结晶系硅基板的表面处理方法及太阳能电池的制造方法 - Google Patents
太阳能电池用结晶系硅基板的表面处理方法及太阳能电池的制造方法 Download PDFInfo
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- CN102222719B CN102222719B CN 201010284727 CN201010284727A CN102222719B CN 102222719 B CN102222719 B CN 102222719B CN 201010284727 CN201010284727 CN 201010284727 CN 201010284727 A CN201010284727 A CN 201010284727A CN 102222719 B CN102222719 B CN 102222719B
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- silicon substrate
- crystallization silicon
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- 239000000758 substrate Substances 0.000 title claims abstract description 147
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 64
- 239000010703 silicon Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 title abstract description 6
- 238000003672 processing method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 68
- 239000007864 aqueous solution Substances 0.000 claims abstract description 45
- 238000001312 dry etching Methods 0.000 claims abstract description 23
- 238000004381 surface treatment Methods 0.000 claims description 123
- 238000002425 crystallisation Methods 0.000 claims description 55
- 230000008025 crystallization Effects 0.000 claims description 55
- 230000002378 acidificating effect Effects 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000001802 infusion Methods 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N 2-propanol Substances CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
Description
分类 | 反射率(%,350nm~1050nm) |
只进行基板损伤处理的情况 | 28.96 |
进行基板损伤处理及RIE的情况 | 10.51 |
进行第一表面处理及第二表面处理的情况 | 7.79 |
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100034501 | 2010-04-14 | ||
KR10-2010-0034501 | 2010-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102222719A CN102222719A (zh) | 2011-10-19 |
CN102222719B true CN102222719B (zh) | 2013-10-16 |
Family
ID=43466608
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201010284727 Active CN102222719B (zh) | 2010-04-14 | 2010-09-17 | 太阳能电池用结晶系硅基板的表面处理方法及太阳能电池的制造方法 |
CN201110095878.4A Expired - Fee Related CN102222723B (zh) | 2010-04-14 | 2011-04-14 | 太阳能电池制造方法及采用该方法制造的太阳能电池 |
CN 201110095827 Expired - Fee Related CN102222721B (zh) | 2010-04-14 | 2011-04-14 | 结晶系硅太阳能电池的制备方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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CN201110095878.4A Expired - Fee Related CN102222723B (zh) | 2010-04-14 | 2011-04-14 | 太阳能电池制造方法及采用该方法制造的太阳能电池 |
CN 201110095827 Expired - Fee Related CN102222721B (zh) | 2010-04-14 | 2011-04-14 | 结晶系硅太阳能电池的制备方法 |
Country Status (3)
Country | Link |
---|---|
KR (3) | KR101052059B1 (zh) |
CN (3) | CN102222719B (zh) |
TW (1) | TWI451586B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101145472B1 (ko) * | 2010-11-29 | 2012-05-15 | 현대중공업 주식회사 | 태양전지의 제조방법 |
DE102012213793B3 (de) * | 2012-08-03 | 2013-10-24 | Solarworld Innovations Gmbh | Untersuchung eines Siliziumsubstrats für eine Solarzelle |
KR101976420B1 (ko) * | 2013-03-06 | 2019-05-09 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102027138B1 (ko) * | 2013-07-02 | 2019-10-01 | 성균관대학교산학협력단 | 멀티 스케일의 요철이 형성된 태양 전지 기판의 제조방법 및 이를 이용한 태양 전지 |
CN105161575A (zh) * | 2015-09-30 | 2015-12-16 | 江苏盎华光伏工程技术研究中心有限公司 | 一种硅片的预处理方法、硅片和太阳能电池片 |
CN105405931A (zh) * | 2015-12-23 | 2016-03-16 | 浙江晶科能源有限公司 | 一种太阳能电池及其制作方法 |
CN106960882B (zh) * | 2017-03-20 | 2018-06-15 | 河北盛平电子科技有限公司 | 一种表面金属化陶瓷立方体和制作方法 |
CN108091557A (zh) * | 2017-11-29 | 2018-05-29 | 江苏彩虹永能新能源有限公司 | 一种太阳能电池背面刻蚀工艺 |
KR20190068352A (ko) * | 2017-12-08 | 2019-06-18 | 삼성에스디아이 주식회사 | 태양전지 셀 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
JP2000101111A (ja) * | 1998-09-17 | 2000-04-07 | Sharp Corp | 太陽電池の製造方法 |
DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
KR101023143B1 (ko) * | 2004-02-25 | 2011-03-18 | 삼성에스디아이 주식회사 | 태양전지용 실리콘 기판 텍스처링장치 |
JP4766880B2 (ja) * | 2005-01-18 | 2011-09-07 | シャープ株式会社 | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
JP5226255B2 (ja) * | 2007-07-13 | 2013-07-03 | シャープ株式会社 | 太陽電池の製造方法 |
CN101573801B (zh) * | 2007-10-24 | 2011-04-20 | 三菱电机株式会社 | 太阳能电池的制造方法 |
KR20100013649A (ko) * | 2008-07-31 | 2010-02-10 | 삼성전자주식회사 | 광전소자 및 이의 제조 방법 |
KR101447434B1 (ko) * | 2008-09-09 | 2014-10-13 | 주성엔지니어링(주) | 태양전지와 그의 제조 방법 및 제조 장치 |
CN101613884B (zh) * | 2009-04-02 | 2011-09-07 | 常州天合光能有限公司 | 多晶硅酸法制绒工艺 |
-
2010
- 2010-09-17 KR KR1020100092130A patent/KR101052059B1/ko active IP Right Grant
- 2010-09-17 CN CN 201010284727 patent/CN102222719B/zh active Active
- 2010-09-17 TW TW099131725A patent/TWI451586B/zh not_active IP Right Cessation
- 2010-11-17 KR KR1020100114477A patent/KR20110115068A/ko not_active Application Discontinuation
- 2010-12-20 KR KR1020100130429A patent/KR101630802B1/ko active IP Right Grant
-
2011
- 2011-04-14 CN CN201110095878.4A patent/CN102222723B/zh not_active Expired - Fee Related
- 2011-04-14 CN CN 201110095827 patent/CN102222721B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102222723A (zh) | 2011-10-19 |
KR101052059B1 (ko) | 2011-07-27 |
KR101630802B1 (ko) | 2016-06-15 |
KR20110115068A (ko) | 2011-10-20 |
CN102222719A (zh) | 2011-10-19 |
CN102222721B (zh) | 2013-12-25 |
KR20110115071A (ko) | 2011-10-20 |
CN102222721A (zh) | 2011-10-19 |
TWI451586B (zh) | 2014-09-01 |
CN102222723B (zh) | 2014-04-30 |
TW201135956A (en) | 2011-10-16 |
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ASS | Succession or assignment of patent right |
Owner name: YUANYI IPS CO., LTD. Free format text: FORMER OWNER: JIN BINGJUN Effective date: 20120905 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120905 Address after: Gyeonggi Do, South Korea Applicant after: WONIK IPS Co.,Ltd. Address before: Chungnam, South Korea Applicant before: Jin Bingjun |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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Effective date of registration: 20160728 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |