KR101052059B1 - 태양전지용 결정계 실리콘 기판의 표면처리방법 및 태양전지 제조방법 - Google Patents
태양전지용 결정계 실리콘 기판의 표면처리방법 및 태양전지 제조방법 Download PDFInfo
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- KR101052059B1 KR101052059B1 KR1020100092130A KR20100092130A KR101052059B1 KR 101052059 B1 KR101052059 B1 KR 101052059B1 KR 1020100092130 A KR1020100092130 A KR 1020100092130A KR 20100092130 A KR20100092130 A KR 20100092130A KR 101052059 B1 KR101052059 B1 KR 101052059B1
- Authority
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- South Korea
- Prior art keywords
- surface treatment
- treatment step
- substrate
- unevenness
- etching
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 158
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 9
- 229910052710 silicon Inorganic materials 0.000 title description 9
- 239000010703 silicon Substances 0.000 title description 9
- 238000003672 processing method Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 77
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 43
- 238000001312 dry etching Methods 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 238000004381 surface treatment Methods 0.000 claims description 140
- 239000007864 aqueous solution Substances 0.000 claims description 49
- 230000002378 acidificating effect Effects 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 4
- 229910021426 porous silicon Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100034501 | 2010-04-14 | ||
KR1020100034501 | 2010-04-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100114477A Division KR20110115068A (ko) | 2010-04-14 | 2010-11-17 | 태양전지용 결정계 실리콘 기판의 표면처리방법 및 태양전지 제조방법 |
Publications (1)
Publication Number | Publication Date |
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KR101052059B1 true KR101052059B1 (ko) | 2011-07-27 |
Family
ID=43466608
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100092130A KR101052059B1 (ko) | 2010-04-14 | 2010-09-17 | 태양전지용 결정계 실리콘 기판의 표면처리방법 및 태양전지 제조방법 |
KR1020100114477A KR20110115068A (ko) | 2010-04-14 | 2010-11-17 | 태양전지용 결정계 실리콘 기판의 표면처리방법 및 태양전지 제조방법 |
KR1020100130429A KR101630802B1 (ko) | 2010-04-14 | 2010-12-20 | 태양전지소자의 제조방법 및 그 방법에 의하여 제조된 태양전지소자 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100114477A KR20110115068A (ko) | 2010-04-14 | 2010-11-17 | 태양전지용 결정계 실리콘 기판의 표면처리방법 및 태양전지 제조방법 |
KR1020100130429A KR101630802B1 (ko) | 2010-04-14 | 2010-12-20 | 태양전지소자의 제조방법 및 그 방법에 의하여 제조된 태양전지소자 |
Country Status (3)
Country | Link |
---|---|
KR (3) | KR101052059B1 (zh) |
CN (3) | CN102222719B (zh) |
TW (1) | TWI451586B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101145472B1 (ko) * | 2010-11-29 | 2012-05-15 | 현대중공업 주식회사 | 태양전지의 제조방법 |
CN106960882A (zh) * | 2017-03-20 | 2017-07-18 | 河北盛平电子科技有限公司 | 一种表面金属化陶瓷立方体和制作方法 |
CN108091557A (zh) * | 2017-11-29 | 2018-05-29 | 江苏彩虹永能新能源有限公司 | 一种太阳能电池背面刻蚀工艺 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012213793B3 (de) * | 2012-08-03 | 2013-10-24 | Solarworld Innovations Gmbh | Untersuchung eines Siliziumsubstrats für eine Solarzelle |
KR101976420B1 (ko) * | 2013-03-06 | 2019-05-09 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102027138B1 (ko) * | 2013-07-02 | 2019-10-01 | 성균관대학교산학협력단 | 멀티 스케일의 요철이 형성된 태양 전지 기판의 제조방법 및 이를 이용한 태양 전지 |
CN105161575A (zh) * | 2015-09-30 | 2015-12-16 | 江苏盎华光伏工程技术研究中心有限公司 | 一种硅片的预处理方法、硅片和太阳能电池片 |
CN105405931A (zh) * | 2015-12-23 | 2016-03-16 | 浙江晶科能源有限公司 | 一种太阳能电池及其制作方法 |
KR20190068352A (ko) * | 2017-12-08 | 2019-06-18 | 삼성에스디아이 주식회사 | 태양전지 셀 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20050086223A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 태양전지용 실리콘 기판 및 실리콘 기판 텍스처링 방법과그 장치 |
JP2006202831A (ja) | 2005-01-18 | 2006-08-03 | Sharp Corp | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
KR20100013649A (ko) * | 2008-07-31 | 2010-02-10 | 삼성전자주식회사 | 광전소자 및 이의 제조 방법 |
KR20100030090A (ko) * | 2008-09-09 | 2010-03-18 | 주성엔지니어링(주) | 태양전지와 그의 제조 방법 및 제조 장치 |
Family Cites Families (6)
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JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
JP2000101111A (ja) * | 1998-09-17 | 2000-04-07 | Sharp Corp | 太陽電池の製造方法 |
DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
JP5226255B2 (ja) * | 2007-07-13 | 2013-07-03 | シャープ株式会社 | 太陽電池の製造方法 |
KR101088280B1 (ko) * | 2007-10-24 | 2011-11-30 | 미쓰비시덴키 가부시키가이샤 | 태양전지의 제조 방법 |
CN101613884B (zh) * | 2009-04-02 | 2011-09-07 | 常州天合光能有限公司 | 多晶硅酸法制绒工艺 |
-
2010
- 2010-09-17 CN CN 201010284727 patent/CN102222719B/zh not_active Expired - Fee Related
- 2010-09-17 TW TW099131725A patent/TWI451586B/zh not_active IP Right Cessation
- 2010-09-17 KR KR1020100092130A patent/KR101052059B1/ko active IP Right Grant
- 2010-11-17 KR KR1020100114477A patent/KR20110115068A/ko not_active Application Discontinuation
- 2010-12-20 KR KR1020100130429A patent/KR101630802B1/ko active IP Right Grant
-
2011
- 2011-04-14 CN CN201110095878.4A patent/CN102222723B/zh not_active Expired - Fee Related
- 2011-04-14 CN CN 201110095827 patent/CN102222721B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20050086223A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 태양전지용 실리콘 기판 및 실리콘 기판 텍스처링 방법과그 장치 |
JP2006202831A (ja) | 2005-01-18 | 2006-08-03 | Sharp Corp | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
KR20100013649A (ko) * | 2008-07-31 | 2010-02-10 | 삼성전자주식회사 | 광전소자 및 이의 제조 방법 |
KR20100030090A (ko) * | 2008-09-09 | 2010-03-18 | 주성엔지니어링(주) | 태양전지와 그의 제조 방법 및 제조 장치 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101145472B1 (ko) * | 2010-11-29 | 2012-05-15 | 현대중공업 주식회사 | 태양전지의 제조방법 |
CN106960882A (zh) * | 2017-03-20 | 2017-07-18 | 河北盛平电子科技有限公司 | 一种表面金属化陶瓷立方体和制作方法 |
CN108091557A (zh) * | 2017-11-29 | 2018-05-29 | 江苏彩虹永能新能源有限公司 | 一种太阳能电池背面刻蚀工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN102222723B (zh) | 2014-04-30 |
TW201135956A (en) | 2011-10-16 |
KR101630802B1 (ko) | 2016-06-15 |
TWI451586B (zh) | 2014-09-01 |
KR20110115068A (ko) | 2011-10-20 |
CN102222719B (zh) | 2013-10-16 |
CN102222723A (zh) | 2011-10-19 |
KR20110115071A (ko) | 2011-10-20 |
CN102222721B (zh) | 2013-12-25 |
CN102222721A (zh) | 2011-10-19 |
CN102222719A (zh) | 2011-10-19 |
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