JP5226255B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- JP5226255B2 JP5226255B2 JP2007184432A JP2007184432A JP5226255B2 JP 5226255 B2 JP5226255 B2 JP 5226255B2 JP 2007184432 A JP2007184432 A JP 2007184432A JP 2007184432 A JP2007184432 A JP 2007184432A JP 5226255 B2 JP5226255 B2 JP 5226255B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- etching
- layer
- type impurity
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 145
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 143
- 229910052710 silicon Inorganic materials 0.000 claims description 143
- 239000010703 silicon Substances 0.000 claims description 143
- 238000005530 etching Methods 0.000 claims description 139
- 238000009792 diffusion process Methods 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 52
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 37
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 33
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 23
- 238000002161 passivation Methods 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 230000036961 partial effect Effects 0.000 claims description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 151
- 238000010438 heat treatment Methods 0.000 description 43
- 230000002265 prevention Effects 0.000 description 29
- 239000000243 solution Substances 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 239000003513 alkali Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 239000012670 alkaline solution Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 230000000740 bleeding effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
図1(a)は、本発明の製造方法によって得られる太陽電池の一例としての裏面接合型太陽電池の裏面を模式的平面図で示している。また、図1(b)は、図1(a)中の線1B−1Bの沿った模式的断面図である。なお、本願の図面において、長さ、幅、厚さなどの寸法関係は図面の明瞭化と簡略化のために適宜に変更されており、実際の寸法関係を表してはいない。すなわち、本願の図面は、あくまでも模式的なものである。また、図面中の同一の参照符号は同一部分または相当部分を表している。
図2(a)〜(l)に類似する図3(a)〜(j)においては、裏面接合型太陽電池の本発明による製造方法の他の例が図解されている。なお、図3(a)〜(j)に関しては、図2(a)〜(l)の場合と同様に成立することが明らかな事項についての説明は繰り返されない。
上述の実施形態1に対応して、実施例1の太陽電池が作製された。したがって、本実施例1も、図2(a)〜(l)を参照しつつ説明される。まず、1辺100mmで厚さ200μm程度のn型シリコンウェハのスライスダメージ層を水酸化ナトリウム溶液で除去して、n型シリコン基板1を用意した(図2(a)参照)。
前述の実施形態2に対応して、実施例2の太陽電池が作製された。したがって、本実施例2も、図3(a)〜(j)を参照しつつ説明される。まず、1辺100mmで厚さ200μm程度のn型シリコンウェハのスライスダメージ層を水酸化ナトリウム溶液で除去して、n型シリコン基板1を用意した(図3(a)参照)。
Claims (6)
- シリコン基板の一主面に第1導電型不純物層とその上のマスク層を形成し、
前記マスク層と前記第1導電型不純物層とをエッチングし得るエッチングペーストのパターンを前記マスク層上に塗布し、
前記エッチングペーストパターンの領域において前記マスク層と前記第1導電型不純物層とをエッチング除去して前記シリコン基板の一部領域を露出させるように前記シリコン基板を加熱処理し、
前記シリコン基板の露出された前記一部領域に第2導電型不純物層を形成し、そして
前記マスク層を除去する工程を含み、
前記マスク層は、酸化シリコン膜と窒化シリコン膜の少なくともいずれかを含み、
前記エッチングペースト中のエッチング成分は、KOH、NaOH、およびTMAHの少なくとも1種を含み、
前記加熱処理の温度は、150℃以上400℃以下の範囲内にある、太陽電池の製造方法。 - シリコン基板の一主面に第1導電型不純物層とその上のマスク層を形成し、
前記マスク層と前記第1導電型不純物層とをエッチングし得るエッチングペーストのパターンを前記マスク層上に塗布し、
前記エッチングペーストパターンの領域において前記マスク層と前記第1導電型不純物層とをエッチング除去して前記シリコン基板の一部領域を露出させるように前記シリコン基板を加熱処理し、
前記シリコン基板の露出された前記一部領域に第2導電型不純物層を形成し、そして
前記マスク層を除去する工程を含み、
前記第1導電型不純物層を形成するための不純物拡散源として利用されたBSG膜がそのまま前記マスク層としても利用され、
前記エッチングペースト中のエッチング成分は、KOH、NaOH、およびTMAHの少なくとも1種を含み、
前記加熱処理の温度は、150℃以上400℃以下の範囲内にある、太陽電池の製造方法。 - 前記BSG膜の形成においては、ボロン成分を含有する溶剤が200〜3000rpmの回転数でスピンコートされた後に970℃以上の温度で加熱されることを特徴とする請求項2に記載の太陽電池の製造方法。
- 前記エッチングペーストパターンの面積は、前記シリコン基板の前記一主面に対して40%以下であることを特徴とする請求項1から3のいずれかに記載の太陽電池の製造方法。
- 前記シリコン基板の前記一主面は太陽光入射側と反対側の主面であることを特徴とする請求項1から4のいずれかに記載の太陽電池の製造方法。
- 前記マスク層を除去した後に、
前記シリコン基板の前記一主面上にパッシベーション膜を形成し、
前記パッシベーション膜をエッチングし得る第2のエッチングペーストのパターンを前記パッシベーション膜上に塗布し、
前記第2エッチングペーストパターンの領域において前記第1導電型不純物層の少なくとも一部領域および前記第2導電型不純物層の少なくとも一部領域をそれぞれ露出させ、そして
前記第1導電型不純物層の露出された前記一部領域に接触する第1電極および前記第2導電型不純物層の露出された前記一部領域に接触する第2電極をそれぞれ形成する工程を含むことを特徴とする請求項5に記載の太陽電池の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007184432A JP5226255B2 (ja) | 2007-07-13 | 2007-07-13 | 太陽電池の製造方法 |
PCT/JP2008/060544 WO2009011185A1 (ja) | 2007-07-13 | 2008-06-09 | 太陽電池の製造方法 |
US12/668,069 US20100224251A1 (en) | 2007-07-13 | 2008-06-09 | Method of manufacturing solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007184432A JP5226255B2 (ja) | 2007-07-13 | 2007-07-13 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009021494A JP2009021494A (ja) | 2009-01-29 |
JP5226255B2 true JP5226255B2 (ja) | 2013-07-03 |
Family
ID=40259526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007184432A Expired - Fee Related JP5226255B2 (ja) | 2007-07-13 | 2007-07-13 | 太陽電池の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100224251A1 (ja) |
JP (1) | JP5226255B2 (ja) |
WO (1) | WO2009011185A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101901894B1 (ko) * | 2017-04-12 | 2018-09-28 | 엘지전자 주식회사 | 화합물 반도체 태양전지 및 이의 전면 전극 제조 방법 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101099480B1 (ko) | 2009-02-13 | 2011-12-27 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법과 기판 식각 방법 |
JP5449849B2 (ja) * | 2009-04-30 | 2014-03-19 | シャープ株式会社 | 太陽電池およびその製造方法 |
KR101248163B1 (ko) * | 2009-09-10 | 2013-03-27 | 엘지전자 주식회사 | 이면 접합형 태양 전지 및 그 제조 방법 |
DE102010025983A1 (de) | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung |
CN102222719B (zh) * | 2010-04-14 | 2013-10-16 | 圆益Ips股份有限公司 | 太阳能电池用结晶系硅基板的表面处理方法及太阳能电池的制造方法 |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
DE102010028189B4 (de) * | 2010-04-26 | 2018-09-27 | Solarworld Industries Gmbh | Solarzelle |
JP5927549B2 (ja) * | 2010-08-24 | 2016-06-01 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
KR101699297B1 (ko) * | 2010-09-08 | 2017-02-13 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
JP5595850B2 (ja) * | 2010-09-27 | 2014-09-24 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5275415B2 (ja) * | 2011-06-20 | 2013-08-28 | シャープ株式会社 | 結晶太陽電池セルおよび結晶太陽電池セルの製造方法 |
WO2012176527A1 (ja) * | 2011-06-20 | 2012-12-27 | シャープ株式会社 | 結晶太陽電池セルおよび結晶太陽電池セルの製造方法 |
JP5129369B2 (ja) * | 2011-06-20 | 2013-01-30 | シャープ株式会社 | 結晶太陽電池セルおよび結晶太陽電池セルの製造方法 |
JP5756352B2 (ja) * | 2011-06-21 | 2015-07-29 | シャープ株式会社 | 裏面電極型太陽電池の製造方法 |
DE102011088899A1 (de) * | 2011-12-16 | 2013-06-20 | International Solar Energy Research Center Konstanz E.V. | Rückkontakt-Solarzelle und Verfahren zur Herstellung einer Rückkontakt-Solarzelle |
JP5781488B2 (ja) * | 2012-11-07 | 2015-09-24 | シャープ株式会社 | 結晶太陽電池セルおよび結晶太陽電池セルの製造方法 |
US20140130854A1 (en) * | 2012-11-12 | 2014-05-15 | Samsung Sdi Co., Ltd. | Photoelectric device and the manufacturing method thereof |
US9000414B2 (en) * | 2012-11-16 | 2015-04-07 | Korea Photonics Technology Institute | Light emitting diode having heterogeneous protrusion structures |
US20140166094A1 (en) * | 2012-12-18 | 2014-06-19 | Paul Loscutoff | Solar cell emitter region fabrication using etch resistant film |
CN104981893B (zh) | 2013-02-06 | 2018-01-30 | 松下生产工程技术株式会社 | 太阳能电池单元的制造方法 |
FR3002689B1 (fr) * | 2013-02-25 | 2016-10-28 | Commissariat Energie Atomique | Procede de gravure autolimitant a niveaux multiples |
US9947812B2 (en) * | 2014-03-28 | 2018-04-17 | Sunpower Corporation | Metallization of solar cells |
DE102014105358A1 (de) * | 2014-04-15 | 2015-10-15 | Solarworld Innovations Gmbh | Solarzelle und Verfahren zum Herstellen einer Solarzelle |
US9837259B2 (en) * | 2014-08-29 | 2017-12-05 | Sunpower Corporation | Sequential etching treatment for solar cell fabrication |
CN104538487B (zh) * | 2014-11-21 | 2017-02-22 | 广东爱康太阳能科技有限公司 | 一种低杂质含量的太阳能电池制备方法 |
US11201253B2 (en) * | 2016-11-15 | 2021-12-14 | Shin-Etsu Chemical Co., Ltd. | High photovoltaic-conversion efficiency solar cell, method for manufacturing the same, solar cell module, and photovoltaic power generation system |
KR102257824B1 (ko) * | 2016-12-05 | 2021-05-28 | 엘지전자 주식회사 | 태양 전지 제조 방법 |
US11824126B2 (en) | 2019-12-10 | 2023-11-21 | Maxeon Solar Pte. Ltd. | Aligned metallization for solar cells |
CN111354840B (zh) * | 2020-04-22 | 2020-11-03 | 一道新能源科技(衢州)有限公司 | 一种选择性发射极双面perc太阳能电池的制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3653970A (en) * | 1969-04-30 | 1972-04-04 | Nasa | Method of coating solar cell with borosilicate glass and resultant product |
US5209814A (en) * | 1991-09-30 | 1993-05-11 | E. I. Du Pont De Nemours And Company | Method for diffusion patterning |
JP2001267610A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | 太陽電池 |
AU4251001A (en) * | 2000-04-28 | 2001-11-12 | Merck Patent Gmbh | Etching pastes for inorganic surfaces |
DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
JP4244549B2 (ja) * | 2001-11-13 | 2009-03-25 | トヨタ自動車株式会社 | 光電変換素子及びその製造方法 |
DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
JP4657068B2 (ja) * | 2005-09-22 | 2011-03-23 | シャープ株式会社 | 裏面接合型太陽電池の製造方法 |
-
2007
- 2007-07-13 JP JP2007184432A patent/JP5226255B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-09 WO PCT/JP2008/060544 patent/WO2009011185A1/ja active Application Filing
- 2008-06-09 US US12/668,069 patent/US20100224251A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101901894B1 (ko) * | 2017-04-12 | 2018-09-28 | 엘지전자 주식회사 | 화합물 반도체 태양전지 및 이의 전면 전극 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2009021494A (ja) | 2009-01-29 |
US20100224251A1 (en) | 2010-09-09 |
WO2009011185A1 (ja) | 2009-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5226255B2 (ja) | 太陽電池の製造方法 | |
JP4657068B2 (ja) | 裏面接合型太陽電池の製造方法 | |
JP4767110B2 (ja) | 太陽電池、および太陽電池の製造方法 | |
US8257994B2 (en) | Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer | |
JP5117770B2 (ja) | 太陽電池の製造方法 | |
JP5215330B2 (ja) | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール | |
EP2565933A1 (en) | Back contact solar cell and method for manufacturing back contact solar cell | |
JP2008186927A (ja) | 裏面接合型太陽電池とその製造方法 | |
JP4947654B2 (ja) | 誘電体膜のパターニング方法 | |
JP4684056B2 (ja) | 太陽電池の製造方法 | |
JP2010161310A (ja) | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 | |
JP2010109201A (ja) | 太陽電池の製造方法 | |
JP6199727B2 (ja) | 太陽電池の製造方法 | |
US8361836B2 (en) | Method for manufacturing photoelectric conversion element and photoelectric conversion element | |
JP2014197578A (ja) | 太陽電池の製造方法 | |
WO2012176839A1 (ja) | 裏面電極型太陽電池の製造方法 | |
JP6115634B2 (ja) | p型選択エミッタ形成方法 | |
JP2007220707A (ja) | 太陽電池の製造方法 | |
WO2012077597A1 (ja) | 裏面電極型太陽電池の製造方法および裏面電極型太陽電池 | |
JP2006156646A (ja) | 太陽電池の製造方法 | |
JP2014112600A (ja) | 裏面電極型太陽電池の製造方法および裏面電極型太陽電池 | |
JP2010205965A (ja) | 半導体装置の製造方法 | |
JP2012094739A (ja) | 製膜方法および半導体装置の製造方法 | |
JP2011124603A (ja) | 裏面接合型太陽電池の製造方法 | |
JP2014086589A (ja) | 太陽電池セルの製造方法および太陽電池セル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110726 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110824 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130125 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130314 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160322 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |