CN102212315B - 研磨用组合物及研磨方法 - Google Patents
研磨用组合物及研磨方法 Download PDFInfo
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- CN102212315B CN102212315B CN201110041743.XA CN201110041743A CN102212315B CN 102212315 B CN102212315 B CN 102212315B CN 201110041743 A CN201110041743 A CN 201110041743A CN 102212315 B CN102212315 B CN 102212315B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2010-089698 | 2010-04-08 | ||
| JP2010089698A JP5774283B2 (ja) | 2010-04-08 | 2010-04-08 | 研磨用組成物及び研磨方法 |
Publications (2)
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| CN102212315A CN102212315A (zh) | 2011-10-12 |
| CN102212315B true CN102212315B (zh) | 2015-05-13 |
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| EP (1) | EP2374852B1 (ja) |
| JP (1) | JP5774283B2 (ja) |
| KR (1) | KR20110113131A (ja) |
| CN (1) | CN102212315B (ja) |
| TW (1) | TWI593789B (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10407594B2 (en) * | 2011-03-22 | 2019-09-10 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine |
| KR102000304B1 (ko) * | 2011-06-14 | 2019-07-15 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| WO2013077354A1 (ja) * | 2011-11-22 | 2013-05-30 | 国立大学法人東京大学 | セルロースナノファイバー分散液とその製造方法、セルロースナノファイバー修飾体、セルロースナノファイバー複合体 |
| WO2013157442A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2014072336A (ja) * | 2012-09-28 | 2014-04-21 | Fujimi Inc | 研磨用組成物 |
| WO2014061417A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Ｃｍｐ用研磨液、貯蔵液及び研磨方法 |
| JP6057706B2 (ja) * | 2012-12-28 | 2017-01-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN105229098B (zh) * | 2013-05-15 | 2017-08-11 | 巴斯夫欧洲公司 | 包含n,n,n＇,n＇‑四(2‑羟基丙基)乙二胺或甲磺酸的化学机械抛光组合物 |
| KR101573113B1 (ko) * | 2013-08-30 | 2015-12-01 | 엘티씨에이엠 주식회사 | 화학기계적 연마용 슬러리 조성물 |
| KR101963179B1 (ko) * | 2015-07-30 | 2019-03-29 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 박막 트랜지스터 기판의 제조방법 |
| WO2019006683A1 (zh) * | 2017-07-04 | 2019-01-10 | 深圳市长宏泰科技有限公司 | 抛光剂、不锈钢件及其抛光处理方法 |
| EP3498812B1 (en) * | 2017-12-14 | 2020-06-17 | The Procter & Gamble Company | Films and unit dose articles comprising aversive uv-protective agents, and uses and methods related thereto |
| CN110029348A (zh) * | 2018-08-09 | 2019-07-19 | 苏州纳勒电子科技有限公司 | 一种用于处理铜表面的微蚀液 |
| US20230020073A1 (en) * | 2019-12-04 | 2023-01-19 | Versum Materials Us, Llc | High Oxide Film Removal Rate Shallow Trench (STI) Chemical Mechanical Planarization (CMP) Polishing |
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- 2010-12-07 TW TW099142610A patent/TWI593789B/zh active
-
2011
- 2011-02-18 CN CN201110041743.XA patent/CN102212315B/zh active Active
- 2011-03-08 KR KR1020110020179A patent/KR20110113131A/ko active IP Right Grant
- 2011-03-30 US US13/075,791 patent/US20110250754A1/en not_active Abandoned
- 2011-04-05 EP EP11161123.2A patent/EP2374852B1/en active Active
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2016
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2011222716A (ja) | 2011-11-04 |
| EP2374852B1 (en) | 2017-04-05 |
| US20160136784A1 (en) | 2016-05-19 |
| EP2374852A1 (en) | 2011-10-12 |
| TWI593789B (zh) | 2017-08-01 |
| CN102212315A (zh) | 2011-10-12 |
| KR20110113131A (ko) | 2011-10-14 |
| US20110250754A1 (en) | 2011-10-13 |
| TW201137097A (en) | 2011-11-01 |
| JP5774283B2 (ja) | 2015-09-09 |
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