CN102196199B - 固态拍摄装置、驱动固态拍摄装置的方法以及电子设备 - Google Patents

固态拍摄装置、驱动固态拍摄装置的方法以及电子设备 Download PDF

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Publication number
CN102196199B
CN102196199B CN201110052453.5A CN201110052453A CN102196199B CN 102196199 B CN102196199 B CN 102196199B CN 201110052453 A CN201110052453 A CN 201110052453A CN 102196199 B CN102196199 B CN 102196199B
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Chinese (zh)
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CN102196199A (zh
Inventor
加藤昭彦
田浦忠行
山村育弘
吉村真一
大池佑辅
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201110052453.5A 2010-03-11 2011-03-04 固态拍摄装置、驱动固态拍摄装置的方法以及电子设备 Expired - Fee Related CN102196199B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP054140/10 2010-03-11
JP2010054140A JP5499789B2 (ja) 2010-03-11 2010-03-11 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器

Publications (2)

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CN102196199A CN102196199A (zh) 2011-09-21
CN102196199B true CN102196199B (zh) 2015-07-08

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Country Status (3)

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US (1) US9060145B2 (enExample)
JP (1) JP5499789B2 (enExample)
CN (1) CN102196199B (enExample)

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JP5885403B2 (ja) * 2011-06-08 2016-03-15 キヤノン株式会社 撮像装置
JP2013011662A (ja) * 2011-06-28 2013-01-17 Sony Corp 撮像装置および方法、記録媒体、並びにプログラム
JP5780025B2 (ja) * 2011-07-11 2015-09-16 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
TWI467751B (zh) 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
JP5987326B2 (ja) 2012-01-23 2016-09-07 ソニー株式会社 固体撮像素子および信号処理方法、並びに電子機器
JP6089419B2 (ja) * 2012-03-15 2017-03-08 カシオ計算機株式会社 撮像回路、撮像方法、撮像装置及びプログラム
TWI623232B (zh) 2013-07-05 2018-05-01 Sony Corp 固體攝像裝置及其驅動方法以及包含固體攝像裝置之電子機器
JP5968350B2 (ja) * 2014-03-14 2016-08-10 キヤノン株式会社 撮像装置、および、撮像システム
JP6324184B2 (ja) * 2014-04-18 2018-05-16 キヤノン株式会社 光電変換装置、撮像システム、および光電変換装置の駆動方法
CN104064142B (zh) 2014-06-13 2016-09-21 上海天马有机发光显示技术有限公司 一种有机发光二极管像素驱动电路及显示装置
CN104064143B (zh) * 2014-06-13 2017-02-08 上海天马有机发光显示技术有限公司 一种有机发光二极管像素驱动电路及显示装置
JP6353300B2 (ja) * 2014-07-08 2018-07-04 ソニーセミコンダクタソリューションズ株式会社 画素回路、半導体光検出装置および放射線計数装置
JP2017076899A (ja) * 2015-10-15 2017-04-20 ソニー株式会社 固体撮像素子、および電子装置
JP6734649B2 (ja) 2015-12-28 2020-08-05 キヤノン株式会社 撮像装置、撮像システム、及び、撮像装置の制御方法
US9961255B2 (en) * 2016-02-09 2018-05-01 Canon Kabushiki Kaisha Image capturing apparatus, control method thereof, and storage medium
US10863130B2 (en) * 2017-01-25 2020-12-08 BAE Systems Imaging Solutions Inc. Backside illuminated global shutter imaging array
EP4535815A1 (en) * 2017-05-10 2025-04-09 Brillnics Singapore Pte. Ltd. Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus
JP6907060B2 (ja) * 2017-07-21 2021-07-21 キヤノン株式会社 撮像素子および撮像装置
JP2020047826A (ja) * 2018-09-20 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2021010075A (ja) * 2019-06-28 2021-01-28 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US20230253436A1 (en) * 2022-02-07 2023-08-10 Samsung Electronics Co., Ltd. Image sensor and operation method thereof

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CN101594491A (zh) * 2008-05-30 2009-12-02 索尼株式会社 固态成像装置、成像装置和固态成像装置的驱动方法

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JP2009049870A (ja) * 2007-08-22 2009-03-05 Sony Corp 固体撮像装置、撮像装置
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CN1956490A (zh) * 2005-10-28 2007-05-02 索尼株式会社 固态成像器件、驱动固态成像器件的方法和成像设备
CN101296305A (zh) * 2007-04-23 2008-10-29 索尼株式会社 固态成像设备、其信号处理方法和成像装置
CN101594491A (zh) * 2008-05-30 2009-12-02 索尼株式会社 固态成像装置、成像装置和固态成像装置的驱动方法

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JP5499789B2 (ja) 2014-05-21
US20110221940A1 (en) 2011-09-15
US9060145B2 (en) 2015-06-16
CN102196199A (zh) 2011-09-21
JP2011188410A (ja) 2011-09-22

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Granted publication date: 20150708