CN102194673B - 光致抗蚀剂及其使用方法 - Google Patents

光致抗蚀剂及其使用方法 Download PDF

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Publication number
CN102194673B
CN102194673B CN201010625128.9A CN201010625128A CN102194673B CN 102194673 B CN102194673 B CN 102194673B CN 201010625128 A CN201010625128 A CN 201010625128A CN 102194673 B CN102194673 B CN 102194673B
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China
Prior art keywords
photoresist
component
epoxypropoxy
bonding
promotes
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CN201010625128.9A
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Chinese (zh)
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CN102194673A (zh
Inventor
G·珀勒斯
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10P76/204—
    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/0085—Azides characterised by the non-macromolecular additives

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN201010625128.9A 2009-12-15 2010-12-15 光致抗蚀剂及其使用方法 Active CN102194673B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28674409P 2009-12-15 2009-12-15
US61/286,744 2009-12-15

Publications (2)

Publication Number Publication Date
CN102194673A CN102194673A (zh) 2011-09-21
CN102194673B true CN102194673B (zh) 2015-08-05

Family

ID=43797660

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010625128.9A Active CN102194673B (zh) 2009-12-15 2010-12-15 光致抗蚀剂及其使用方法

Country Status (6)

Country Link
US (1) US9665001B2 (enExample)
EP (1) EP2336829B1 (enExample)
JP (6) JP2011186432A (enExample)
KR (1) KR101846835B1 (enExample)
CN (1) CN102194673B (enExample)
TW (1) TWI618981B (enExample)

Families Citing this family (10)

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KR101384457B1 (ko) * 2011-08-04 2014-04-14 주식회사 엘지화학 실란계 화합물 및 이를 포함하는 감광성 수지 조성물
KR101505720B1 (ko) 2012-03-30 2015-03-25 주식회사 엘지화학 실록산계 화합물, 이를 포함하는 감광성 조성물 및 감광재
WO2013147411A1 (ko) * 2012-03-30 2013-10-03 주식회사 엘지화학 실록산계 화합물, 이를 포함하는 감광성 조성물 및 감광재
JP6065789B2 (ja) * 2012-09-27 2017-01-25 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP2014182154A (ja) * 2013-03-15 2014-09-29 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス
KR102195700B1 (ko) 2013-12-04 2020-12-29 삼성디스플레이 주식회사 화학증폭형 레지스트를 이용한 패턴 형성방법
WO2016017346A1 (ja) * 2014-08-01 2016-02-04 富士フイルム株式会社 パターン形成方法、及び、これを用いた電子デバイスの製造方法
JP6843515B2 (ja) * 2015-03-31 2021-03-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
WO2021079987A1 (ja) 2019-10-25 2021-04-29 味の素株式会社 筋質向上剤
KR20230170166A (ko) 2022-06-09 2023-12-19 삼성디스플레이 주식회사 표시 장치와 이의 제조 방법

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Also Published As

Publication number Publication date
JP2017201420A (ja) 2017-11-09
US20110254133A1 (en) 2011-10-20
JP2019117401A (ja) 2019-07-18
KR101846835B1 (ko) 2018-04-09
EP2336829B1 (en) 2019-01-23
TWI618981B (zh) 2018-03-21
KR20110068937A (ko) 2011-06-22
JP2021184107A (ja) 2021-12-02
US9665001B2 (en) 2017-05-30
JP2019194725A (ja) 2019-11-07
TW201140247A (en) 2011-11-16
JP6641092B2 (ja) 2020-02-05
JP2011186432A (ja) 2011-09-22
CN102194673A (zh) 2011-09-21
JP6971273B2 (ja) 2021-11-24
EP2336829A1 (en) 2011-06-22
JP2015129961A (ja) 2015-07-16

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Address after: Massachusetts, USA

Patentee after: DuPont Electronic Materials International LLC

Country or region after: U.S.A.

Address before: Massachusetts, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS, LLC

Country or region before: U.S.A.