CN102165529B - 具有输出延迟调整的串联存储器系统 - Google Patents

具有输出延迟调整的串联存储器系统 Download PDF

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Publication number
CN102165529B
CN102165529B CN200980138194.9A CN200980138194A CN102165529B CN 102165529 B CN102165529 B CN 102165529B CN 200980138194 A CN200980138194 A CN 200980138194A CN 102165529 B CN102165529 B CN 102165529B
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CN
China
Prior art keywords
clock signal
command
output
duty cycle
slave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980138194.9A
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English (en)
Chinese (zh)
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CN102165529A (zh
Inventor
吴学俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nova Chip Canada Co
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/241,832 external-priority patent/US8181056B2/en
Priority claimed from US12/241,960 external-priority patent/US8161313B2/en
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of CN102165529A publication Critical patent/CN102165529A/zh
Application granted granted Critical
Publication of CN102165529B publication Critical patent/CN102165529B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/32Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066Output synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069I/O lines read out arrangements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device

Landscapes

  • Dram (AREA)
  • Memory System (AREA)
  • Pulse Circuits (AREA)
  • Static Random-Access Memory (AREA)
CN200980138194.9A 2008-09-30 2009-09-17 具有输出延迟调整的串联存储器系统 Expired - Fee Related CN102165529B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/241960 2008-09-30
US12/241,832 US8181056B2 (en) 2008-09-30 2008-09-30 Serial-connected memory system with output delay adjustment
US12/241832 2008-09-30
US12/241,960 US8161313B2 (en) 2008-09-30 2008-09-30 Serial-connected memory system with duty cycle correction
PCT/CA2009/001271 WO2010037205A1 (en) 2008-09-30 2009-09-17 Serial-connected memory system with output delay adjustment

Publications (2)

Publication Number Publication Date
CN102165529A CN102165529A (zh) 2011-08-24
CN102165529B true CN102165529B (zh) 2014-12-31

Family

ID=42072981

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980138194.9A Expired - Fee Related CN102165529B (zh) 2008-09-30 2009-09-17 具有输出延迟调整的串联存储器系统

Country Status (6)

Country Link
EP (1) EP2329496A4 (enExample)
JP (2) JP2012504263A (enExample)
KR (1) KR20110081958A (enExample)
CN (1) CN102165529B (enExample)
TW (1) TW201027556A (enExample)
WO (1) WO2010037205A1 (enExample)

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US8665665B2 (en) * 2011-03-30 2014-03-04 Mediatek Inc. Apparatus and method to adjust clock duty cycle of memory
US9257164B2 (en) * 2013-03-14 2016-02-09 Altera Corporation Circuits and methods for DQS autogating
JP6232313B2 (ja) * 2014-02-25 2017-11-15 新日本無線株式会社 同期式シリアル通信方法およびスレーブ装置
KR102757627B1 (ko) * 2016-09-23 2025-01-23 삼성전자주식회사 케스-케이드 연결 구조로 레퍼런스 클록을 전달하는 스토리지 장치들을 포함하는 전자 장치
KR20190009534A (ko) * 2017-07-19 2019-01-29 에스케이하이닉스 주식회사 반도체장치
KR101999125B1 (ko) * 2017-11-24 2019-07-11 파밀넷 주식회사 Rs-422와 rs-485 시리얼 통신을 위한 출력신호 자동 제어기
KR102679157B1 (ko) 2018-10-30 2024-06-27 삼성전자주식회사 모드 레지스터 쓰기 명령을 이용하여 쓰기 클럭의 듀티 사이클의 트레이닝을 수행하는 시스템 온 칩, 시스템 온 칩의 동작 방법, 및 시스템 온 칩을 포함하는 전자 장치
JP2020155841A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体集積回路及び送信装置
US10937468B2 (en) * 2019-07-03 2021-03-02 Micron Technology, Inc. Memory with configurable die powerup delay
CN111339024A (zh) * 2020-04-17 2020-06-26 深圳比特微电子科技有限公司 计算装置以及计算系统
CN112332881B (zh) * 2020-10-19 2022-04-26 深圳市信锐网科技术有限公司 使能电路及通信装置
CN112698683B (zh) * 2020-12-28 2024-07-19 深圳市合信自动化技术有限公司 一种可配置总线解决传输延时数据出错的方法、装置及plc
JP2022141178A (ja) * 2021-03-15 2022-09-29 キオクシア株式会社 メモリシステム
CN118251724A (zh) * 2021-11-19 2024-06-25 株式会社索思未来 存储器电路
US12424264B2 (en) 2023-03-14 2025-09-23 Powerchip Semiconductor Manufacturing Corporation Stacked memory with a timing adjustment function

Citations (7)

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US20040148482A1 (en) * 2003-01-13 2004-07-29 Grundy Kevin P. Memory chain
US20050058233A1 (en) * 2003-09-12 2005-03-17 Huy Nguyen System and method for adaptive duty cycle optimization
US20060083043A1 (en) * 2003-11-17 2006-04-20 Sun Microsystems, Inc. Memory system topology
US20070046351A1 (en) * 2005-08-30 2007-03-01 Alessandro Minzoni Duty cycle corrector
CN1965282A (zh) * 2004-04-05 2007-05-16 米克伦技术公司 延迟线同步器装置和方法
US20080013662A1 (en) * 1999-07-14 2008-01-17 Stefanos Sidiropoulos Master Device with Time Domains for Slave Devices in Synchronous Memory System
US20080209095A1 (en) * 2007-01-09 2008-08-28 Allen James J Structure for reducing latency associated with read operations in a memory system

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JP2000148674A (ja) * 1998-11-09 2000-05-30 Sharp Corp シリアルデータ伝送方法
US6643787B1 (en) * 1999-10-19 2003-11-04 Rambus Inc. Bus system optimization
JP2003140962A (ja) * 2001-10-30 2003-05-16 Mitsubishi Electric Corp 信号送受信システム
JP3843002B2 (ja) * 2001-11-26 2006-11-08 株式会社ルネサステクノロジ 可変遅延回路及びその可変遅延回路を用いたシステムlsi
US7389375B2 (en) * 2004-07-30 2008-06-17 International Business Machines Corporation System, method and storage medium for a multi-mode memory buffer device
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
KR101293365B1 (ko) 2005-09-30 2013-08-05 모사이드 테크놀로지스 인코퍼레이티드 출력 제어 메모리
US20070076502A1 (en) 2005-09-30 2007-04-05 Pyeon Hong B Daisy chain cascading devices
US7747833B2 (en) 2005-09-30 2010-06-29 Mosaid Technologies Incorporated Independent link and bank selection
US8121237B2 (en) * 2006-03-16 2012-02-21 Rambus Inc. Signaling system with adaptive timing calibration
US8069328B2 (en) 2006-03-28 2011-11-29 Mosaid Technologies Incorporated Daisy chain cascade configuration recognition technique
US7673093B2 (en) * 2006-07-26 2010-03-02 International Business Machines Corporation Computer system having daisy chained memory chips
KR101476463B1 (ko) * 2006-08-22 2014-12-24 컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드 스케일러블 메모리 시스템
JP4952177B2 (ja) * 2006-10-02 2012-06-13 富士通株式会社 記憶装置
CN101617371B (zh) * 2007-02-16 2014-03-26 莫塞德技术公司 具有多个外部电源的非易失性半导体存储器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080013662A1 (en) * 1999-07-14 2008-01-17 Stefanos Sidiropoulos Master Device with Time Domains for Slave Devices in Synchronous Memory System
US20040148482A1 (en) * 2003-01-13 2004-07-29 Grundy Kevin P. Memory chain
US20050058233A1 (en) * 2003-09-12 2005-03-17 Huy Nguyen System and method for adaptive duty cycle optimization
US20060083043A1 (en) * 2003-11-17 2006-04-20 Sun Microsystems, Inc. Memory system topology
CN1965282A (zh) * 2004-04-05 2007-05-16 米克伦技术公司 延迟线同步器装置和方法
US20070046351A1 (en) * 2005-08-30 2007-03-01 Alessandro Minzoni Duty cycle corrector
US20080209095A1 (en) * 2007-01-09 2008-08-28 Allen James J Structure for reducing latency associated with read operations in a memory system

Also Published As

Publication number Publication date
EP2329496A1 (en) 2011-06-08
WO2010037205A1 (en) 2010-04-08
CN102165529A (zh) 2011-08-24
KR20110081958A (ko) 2011-07-15
EP2329496A4 (en) 2012-06-13
JP5599852B2 (ja) 2014-10-01
JP2013008386A (ja) 2013-01-10
JP2012504263A (ja) 2012-02-16
TW201027556A (en) 2010-07-16

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Address after: Ontario, Canada

Applicant after: Examine Vincent Zhi Cai management company

Address before: Ontario, Canada

Applicant before: Mosaid Technologies Inc.

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Patentee after: Nova chip Canada Company

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