CN102163530B - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN102163530B
CN102163530B CN201110054175.7A CN201110054175A CN102163530B CN 102163530 B CN102163530 B CN 102163530B CN 201110054175 A CN201110054175 A CN 201110054175A CN 102163530 B CN102163530 B CN 102163530B
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electrode
plasma
sidewall
case
mentioned
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Chinese (zh)
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CN102163530A (zh
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松浦广行
高桥俊树
福岛讲平
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
CN201110054175.7A 2007-08-31 2008-08-29 等离子体处理装置 Active CN102163530B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-227005 2007-08-31
JP2007227005 2007-08-31
JP2008203574A JP5098882B2 (ja) 2007-08-31 2008-08-06 プラズマ処理装置
JP2008-203574 2008-08-06

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008101714319A Division CN101378007B (zh) 2007-08-31 2008-08-29 等离子体处理装置

Publications (2)

Publication Number Publication Date
CN102163530A CN102163530A (zh) 2011-08-24
CN102163530B true CN102163530B (zh) 2014-06-04

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ID=40421482

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201110054175.7A Active CN102163530B (zh) 2007-08-31 2008-08-29 等离子体处理装置
CN2008101714319A Active CN101378007B (zh) 2007-08-31 2008-08-29 等离子体处理装置
CN201410081006.6A Active CN104051213B (zh) 2007-08-31 2008-08-29 等离子体处理装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2008101714319A Active CN101378007B (zh) 2007-08-31 2008-08-29 等离子体处理装置
CN201410081006.6A Active CN104051213B (zh) 2007-08-31 2008-08-29 等离子体处理装置

Country Status (4)

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JP (2) JP5098882B2 (ja)
KR (1) KR101161911B1 (ja)
CN (3) CN102163530B (ja)
TW (1) TWI423328B (ja)

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US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
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US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
CN102345111B (zh) * 2010-07-29 2015-03-04 东京毅力科创株式会社 成膜方法和成膜装置
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
KR101492175B1 (ko) * 2011-05-03 2015-02-10 주식회사 엘지화학 양극 활물질 입자의 표면 처리 방법 및 이로부터 형성된 양극 활물질 입자
JP5870568B2 (ja) 2011-05-12 2016-03-01 東京エレクトロン株式会社 成膜装置、プラズマ処理装置、成膜方法及び記憶媒体
KR101371435B1 (ko) * 2012-01-04 2014-03-12 주식회사 유진테크 처리유닛을 포함하는 기판 처리 장치
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US8728955B2 (en) * 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
CN103243310B (zh) * 2012-02-14 2017-04-12 诺发系统公司 在衬底表面上的等离子体激活的保形膜沉积的方法
JP6051788B2 (ja) * 2012-11-05 2016-12-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ発生装置
JP5939147B2 (ja) 2012-12-14 2016-06-22 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法
JP6011420B2 (ja) 2013-03-29 2016-10-19 東京エレクトロン株式会社 縦型熱処理装置の運転方法、縦型熱処理装置及び記憶媒体
JP6126475B2 (ja) * 2013-07-02 2017-05-10 東京エレクトロン株式会社 基板処理装置
JP6113626B2 (ja) 2013-10-21 2017-04-12 東京エレクトロン株式会社 プラズマ処理装置
CN103607836A (zh) * 2013-11-27 2014-02-26 苏州市奥普斯等离子体科技有限公司 一种新型等离子体处理装置
CN103594317A (zh) * 2013-11-27 2014-02-19 苏州市奥普斯等离子体科技有限公司 一种改进型粉体材料表面等离子体处理装置
US9583337B2 (en) * 2014-03-26 2017-02-28 Ultratech, Inc. Oxygen radical enhanced atomic-layer deposition using ozone plasma
KR101588609B1 (ko) * 2014-06-16 2016-01-27 주식회사 윈텔 플라즈마 발생 장치
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
JP5977853B1 (ja) * 2015-03-20 2016-08-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
JP6515665B2 (ja) * 2015-05-07 2019-05-22 東京エレクトロン株式会社 基板処理装置
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
US10121655B2 (en) * 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
US20170241019A1 (en) * 2016-02-22 2017-08-24 Ultratech, Inc. Pe-ald methods with reduced quartz-based contamination
US10328441B2 (en) * 2016-04-29 2019-06-25 Semes Co., Ltd. Nozzle unit and coating apparatus including the same
CN109479369B (zh) 2016-06-24 2021-01-15 Emd株式会社 等离子源以及等离子处理装置
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
JP7071381B2 (ja) 2017-02-05 2022-05-18 レキスポルト アーゲー ポールハンドル
CN107527840B (zh) * 2017-08-18 2020-06-02 大连佳峰自动化股份有限公司 扇出型封装固化、钝化组合装置
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
KR20200118504A (ko) 2018-03-02 2020-10-15 램 리써치 코포레이션 가수분해를 사용한 선택적인 증착
JP6552780B1 (ja) * 2018-03-22 2019-07-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、及び静電シールド
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
JP6966402B2 (ja) * 2018-09-11 2021-11-17 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法および基板処理装置の電極
CN109640504B (zh) * 2018-12-14 2023-09-05 四川大学 一种多孔射流种植体活化亲水装置
JP6999596B2 (ja) * 2019-03-25 2022-01-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP6709478B1 (ja) * 2019-04-24 2020-06-17 株式会社プラズマイオンアシスト 誘導結合型アンテナユニット及びプラズマ処理装置
JP2023003828A (ja) * 2021-06-24 2023-01-17 東京エレクトロン株式会社 成膜装置及び成膜方法

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Also Published As

Publication number Publication date
CN101378007B (zh) 2013-03-27
JP2009076876A (ja) 2009-04-09
JP5353905B2 (ja) 2013-11-27
JP2011097096A (ja) 2011-05-12
TWI423328B (zh) 2014-01-11
JP5098882B2 (ja) 2012-12-12
CN102163530A (zh) 2011-08-24
CN101378007A (zh) 2009-03-04
CN104051213B (zh) 2016-08-03
KR20090023251A (ko) 2009-03-04
CN104051213A (zh) 2014-09-17
TW200931519A (en) 2009-07-16
KR101161911B1 (ko) 2012-07-03

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