CN102157561A - 一种具有p埋层的纵向沟道SOI nLDMOS器件单元 - Google Patents
一种具有p埋层的纵向沟道SOI nLDMOS器件单元 Download PDFInfo
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- CN102157561A CN102157561A CN 201110056314 CN201110056314A CN102157561A CN 102157561 A CN102157561 A CN 102157561A CN 201110056314 CN201110056314 CN 201110056314 CN 201110056314 A CN201110056314 A CN 201110056314A CN 102157561 A CN102157561 A CN 102157561A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000012212 insulator Substances 0.000 title description 2
- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- 150000004706 metal oxides Chemical class 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 230000003139 buffering effect Effects 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
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CN201110056314XA CN102157561B (zh) | 2011-03-10 | 2011-03-10 | 一种具有p埋层的纵向沟道SOI nLDMOS器件单元 |
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CN201110056314XA CN102157561B (zh) | 2011-03-10 | 2011-03-10 | 一种具有p埋层的纵向沟道SOI nLDMOS器件单元 |
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CN102157561A true CN102157561A (zh) | 2011-08-17 |
CN102157561B CN102157561B (zh) | 2012-05-23 |
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CN201110056314XA Expired - Fee Related CN102157561B (zh) | 2011-03-10 | 2011-03-10 | 一种具有p埋层的纵向沟道SOI nLDMOS器件单元 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109004020A (zh) * | 2018-07-26 | 2018-12-14 | 上海汇瑞半导体科技有限公司 | 对称高压的半导体功率器件结构 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201374335Y (zh) * | 2009-03-26 | 2009-12-30 | 杭州电子科技大学 | 集成纵向沟道soi ldmos器件单元 |
CN202018967U (zh) * | 2011-03-10 | 2011-10-26 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI nLDMOS器件单元 |
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2011
- 2011-03-10 CN CN201110056314XA patent/CN102157561B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201374335Y (zh) * | 2009-03-26 | 2009-12-30 | 杭州电子科技大学 | 集成纵向沟道soi ldmos器件单元 |
CN202018967U (zh) * | 2011-03-10 | 2011-10-26 | 杭州电子科技大学 | 具有p埋层的纵向沟道SOI nLDMOS器件单元 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109004020A (zh) * | 2018-07-26 | 2018-12-14 | 上海汇瑞半导体科技有限公司 | 对称高压的半导体功率器件结构 |
CN109004020B (zh) * | 2018-07-26 | 2021-10-26 | 上海汇瑞半导体科技有限公司 | 对称高压的半导体功率器件结构 |
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CN102157561B (zh) | 2012-05-23 |
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Owner name: HAIAN SERVICE CENTER FOR TRANSFORMATION OF SCIENTI Free format text: FORMER OWNER: HANGZHOU ELECTRONIC SCIENCE AND TECHNOLOGY UNIV Effective date: 20140623 |
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Effective date of registration: 20140623 Address after: 226600 No. 106 middle Yangtze Road, Haian County, Nantong, Jiangsu Patentee after: SERVICE CENTER OF COMMERCIALIZATION OF RESEARCH FINDINGS, HAIAN COUNTY Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: HANGZHOU DIANZI University |
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