CN102132558B - 具有电荷域求和的图像传感器像素 - Google Patents
具有电荷域求和的图像传感器像素 Download PDFInfo
- Publication number
- CN102132558B CN102132558B CN200980133568.8A CN200980133568A CN102132558B CN 102132558 B CN102132558 B CN 102132558B CN 200980133568 A CN200980133568 A CN 200980133568A CN 102132558 B CN102132558 B CN 102132558B
- Authority
- CN
- China
- Prior art keywords
- summing
- pixel
- floating diffusion
- transistor
- pixels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/198,264 US7777171B2 (en) | 2008-08-26 | 2008-08-26 | In-pixel summing of charge generated by two or more pixels having two reset transistors connected in series |
| US12/198,264 | 2008-08-26 | ||
| PCT/US2009/004813 WO2010027420A1 (en) | 2008-08-26 | 2009-08-24 | Image sensor pixel with charge domain summing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102132558A CN102132558A (zh) | 2011-07-20 |
| CN102132558B true CN102132558B (zh) | 2014-04-09 |
Family
ID=41278890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980133568.8A Active CN102132558B (zh) | 2008-08-26 | 2009-08-24 | 具有电荷域求和的图像传感器像素 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7777171B2 (enExample) |
| EP (1) | EP2321959B1 (enExample) |
| JP (1) | JP5562959B2 (enExample) |
| KR (1) | KR101540656B1 (enExample) |
| CN (1) | CN102132558B (enExample) |
| TW (1) | TWI496464B (enExample) |
| WO (1) | WO2010027420A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8130302B2 (en) * | 2008-11-07 | 2012-03-06 | Aptina Imaging Corporation | Methods and apparatus providing selective binning of pixel circuits |
| US8913166B2 (en) * | 2009-01-21 | 2014-12-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus |
| JP5775570B2 (ja) * | 2010-06-01 | 2015-09-09 | 博立▲碼▼杰通▲訊▼(深▲せん▼)有限公司Boly Media Communications(Shenzhen)Co.,Ltd. | マルチスペクトル感光素子及びそのサンプリング方法 |
| JP5746496B2 (ja) * | 2010-12-03 | 2015-07-08 | キヤノン株式会社 | 撮像装置 |
| JP5885403B2 (ja) * | 2011-06-08 | 2016-03-15 | キヤノン株式会社 | 撮像装置 |
| JP5871496B2 (ja) | 2011-06-24 | 2016-03-01 | キヤノン株式会社 | 撮像装置及びその駆動方法 |
| FR2977371B1 (fr) * | 2011-06-30 | 2013-08-02 | Trixell | Matrice de pixels a groupements programmables |
| US9091666B2 (en) | 2012-02-09 | 2015-07-28 | Kla-Tencor Corp. | Extended defect sizing range for wafer inspection |
| US20130256510A1 (en) * | 2012-03-29 | 2013-10-03 | Omnivision Technologies, Inc. | Imaging device with floating diffusion switch |
| JP2014209696A (ja) | 2012-07-23 | 2014-11-06 | ソニー株式会社 | 固体撮像装置、信号読み出し方法、および電子機器 |
| JP6091218B2 (ja) * | 2013-01-08 | 2017-03-08 | キヤノン株式会社 | 撮像装置、撮像システム、および撮像装置の駆動方法。 |
| JP2015015596A (ja) * | 2013-07-04 | 2015-01-22 | キヤノン株式会社 | 撮像装置及びその駆動方法 |
| CN111885319B (zh) | 2013-11-18 | 2024-02-06 | 株式会社尼康 | 固态成像元件及成像装置 |
| TWI539816B (zh) * | 2013-12-25 | 2016-06-21 | 恆景科技股份有限公司 | 影像感測器 |
| CN104767946B (zh) * | 2014-01-02 | 2018-04-06 | 恒景科技股份有限公司 | 影像传感器 |
| JP6075646B2 (ja) | 2014-03-17 | 2017-02-08 | ソニー株式会社 | 固体撮像装置およびその駆動方法、並びに電子機器 |
| US9720109B2 (en) * | 2014-12-24 | 2017-08-01 | General Electric Company | Systems and methods for minimizing silicon photomultiplier signal propagation delay dispersion and improve timing |
| WO2018062303A1 (ja) * | 2016-09-29 | 2018-04-05 | 株式会社ニコン | 撮像素子および電子カメラ |
| KR102406996B1 (ko) * | 2017-04-07 | 2022-06-08 | 삼성전자주식회사 | 이미지 센서 |
| EP3762967A1 (en) | 2018-03-09 | 2021-01-13 | Imasenic Advanced Imaging, S.L. | Binning pixels |
| KR102012767B1 (ko) * | 2018-03-14 | 2019-08-21 | (주) 픽셀플러스 | 이미지 센서 |
| JP7329318B2 (ja) | 2018-10-25 | 2023-08-18 | ソニーグループ株式会社 | 固体撮像装置及び撮像装置 |
| JP6825675B2 (ja) * | 2019-10-25 | 2021-02-03 | 株式会社ニコン | 撮像素子及び撮像装置 |
| US11468146B2 (en) | 2019-12-06 | 2022-10-11 | Globalfoundries U.S. Inc. | Array of integrated pixel and memory cells for deep in-sensor, in-memory computing |
| US11195580B2 (en) * | 2020-02-26 | 2021-12-07 | Globalfoundries U.S. Inc. | Integrated pixel and two-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing |
| US11653122B2 (en) * | 2020-03-13 | 2023-05-16 | Sony Semiconductor Solutions Corporation | Solid-state image capturing element with floating diffusion layers processing a signal undergoing pixel addition |
| KR20210133341A (ko) * | 2020-04-28 | 2021-11-08 | 삼성전자주식회사 | 이미지 센서 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5541402A (en) * | 1994-10-17 | 1996-07-30 | At&T Corp. | Imaging active pixel device having a non-destructive read-out gate |
| US20030214596A1 (en) * | 2002-05-17 | 2003-11-20 | Stmicroelectronics S.A. | Low-noise CMOS active pixel |
| WO2006124592A2 (en) * | 2005-05-12 | 2006-11-23 | California Institute Of Technology | Linear dynamic range enhancement in a cmos imager |
| CN101213829A (zh) * | 2005-06-01 | 2008-07-02 | 伊斯曼柯达公司 | 具有可选择装仓的cmos图像传感器像素 |
| WO2008088879A1 (en) * | 2007-01-19 | 2008-07-24 | Eastman Kodak Company | Image sensor with gain control |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164831A (en) * | 1990-03-15 | 1992-11-17 | Eastman Kodak Company | Electronic still camera providing multi-format storage of full and reduced resolution images |
| EP1102323B1 (en) * | 1999-11-19 | 2012-08-15 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Method for detecting electromagnetic radiation using an optoelectronic sensor |
| EP2290952A3 (en) * | 2000-07-27 | 2011-08-17 | Canon Kabushiki Kaisha | Image sensing apparatus |
| US6914227B2 (en) * | 2001-06-25 | 2005-07-05 | Canon Kabushiki Kaisha | Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system |
| JP3890207B2 (ja) * | 2001-06-25 | 2007-03-07 | キヤノン株式会社 | 撮像装置および撮像システム |
| US6878918B2 (en) * | 2003-01-09 | 2005-04-12 | Dialdg Semiconductor Gmbh | APS pixel with reset noise suppression and programmable binning capability |
| JP5066704B2 (ja) * | 2005-02-04 | 2012-11-07 | 国立大学法人東北大学 | 固体撮像装置、および固体撮像装置の動作方法 |
| US7705900B2 (en) * | 2005-06-01 | 2010-04-27 | Eastman Kodak Company | CMOS image sensor pixel with selectable binning and conversion gain |
| JP2007150008A (ja) * | 2005-11-29 | 2007-06-14 | Nikon Corp | 固体撮像装置 |
| JP4941131B2 (ja) * | 2007-06-30 | 2012-05-30 | 株式会社ニコン | 固体撮像素子及び電子カメラ |
-
2008
- 2008-08-26 US US12/198,264 patent/US7777171B2/en active Active
-
2009
- 2009-08-24 CN CN200980133568.8A patent/CN102132558B/zh active Active
- 2009-08-24 JP JP2011524981A patent/JP5562959B2/ja active Active
- 2009-08-24 WO PCT/US2009/004813 patent/WO2010027420A1/en not_active Ceased
- 2009-08-24 EP EP09789199.8A patent/EP2321959B1/en active Active
- 2009-08-24 KR KR1020117006915A patent/KR101540656B1/ko active Active
- 2009-08-25 TW TW098128541A patent/TWI496464B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5541402A (en) * | 1994-10-17 | 1996-07-30 | At&T Corp. | Imaging active pixel device having a non-destructive read-out gate |
| US20030214596A1 (en) * | 2002-05-17 | 2003-11-20 | Stmicroelectronics S.A. | Low-noise CMOS active pixel |
| WO2006124592A2 (en) * | 2005-05-12 | 2006-11-23 | California Institute Of Technology | Linear dynamic range enhancement in a cmos imager |
| CN101213829A (zh) * | 2005-06-01 | 2008-07-02 | 伊斯曼柯达公司 | 具有可选择装仓的cmos图像传感器像素 |
| WO2008088879A1 (en) * | 2007-01-19 | 2008-07-24 | Eastman Kodak Company | Image sensor with gain control |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2321959B1 (en) | 2017-08-16 |
| JP2012501578A (ja) | 2012-01-19 |
| CN102132558A (zh) | 2011-07-20 |
| EP2321959A1 (en) | 2011-05-18 |
| US7777171B2 (en) | 2010-08-17 |
| JP5562959B2 (ja) | 2014-07-30 |
| WO2010027420A1 (en) | 2010-03-11 |
| TW201015995A (en) | 2010-04-16 |
| KR101540656B1 (ko) | 2015-07-30 |
| US20100051784A1 (en) | 2010-03-04 |
| KR20110052720A (ko) | 2011-05-18 |
| TWI496464B (zh) | 2015-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102132558B (zh) | 具有电荷域求和的图像传感器像素 | |
| CN102057486B (zh) | 高动态范围图像传感器 | |
| KR101471929B1 (ko) | 공유 처리되는 다중 이미지 센서 시스템 | |
| CN101960596B (zh) | 具有两个晶片的有源像素传感器 | |
| CN102124566A (zh) | 用于3维合成像素的高增益读取电路 | |
| CN102057668B (zh) | 宽孔径图像传感器像素 | |
| CN102017155A (zh) | 从(ccd)移位寄存器排出剩余电荷 | |
| US20090283665A1 (en) | Image sensor with an aligned optical assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: American California Patentee after: OmniVision Technologies, Inc. Address before: American California Patentee before: Omnivision Technologies Inc. |
|
| CP01 | Change in the name or title of a patent holder |