KR101540656B1 - 전하 영역 합산을 이용하는 이미지 센서 픽셀 - Google Patents

전하 영역 합산을 이용하는 이미지 센서 픽셀 Download PDF

Info

Publication number
KR101540656B1
KR101540656B1 KR1020117006915A KR20117006915A KR101540656B1 KR 101540656 B1 KR101540656 B1 KR 101540656B1 KR 1020117006915 A KR1020117006915 A KR 1020117006915A KR 20117006915 A KR20117006915 A KR 20117006915A KR 101540656 B1 KR101540656 B1 KR 101540656B1
Authority
KR
South Korea
Prior art keywords
summing
transistor
floating diffusion
pixel
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117006915A
Other languages
English (en)
Korean (ko)
Other versions
KR20110052720A (ko
Inventor
크리스토퍼 파크스
Original Assignee
옴니비전 테크놀러지즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 옴니비전 테크놀러지즈 인코포레이티드 filed Critical 옴니비전 테크놀러지즈 인코포레이티드
Publication of KR20110052720A publication Critical patent/KR20110052720A/ko
Application granted granted Critical
Publication of KR101540656B1 publication Critical patent/KR101540656B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020117006915A 2008-08-26 2009-08-24 전하 영역 합산을 이용하는 이미지 센서 픽셀 Active KR101540656B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/198,264 US7777171B2 (en) 2008-08-26 2008-08-26 In-pixel summing of charge generated by two or more pixels having two reset transistors connected in series
US12/198,264 2008-08-26

Publications (2)

Publication Number Publication Date
KR20110052720A KR20110052720A (ko) 2011-05-18
KR101540656B1 true KR101540656B1 (ko) 2015-07-30

Family

ID=41278890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117006915A Active KR101540656B1 (ko) 2008-08-26 2009-08-24 전하 영역 합산을 이용하는 이미지 센서 픽셀

Country Status (7)

Country Link
US (1) US7777171B2 (enExample)
EP (1) EP2321959B1 (enExample)
JP (1) JP5562959B2 (enExample)
KR (1) KR101540656B1 (enExample)
CN (1) CN102132558B (enExample)
TW (1) TWI496464B (enExample)
WO (1) WO2010027420A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
US8913166B2 (en) * 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
JP5775570B2 (ja) * 2010-06-01 2015-09-09 博立▲碼▼杰通▲訊▼（深▲せん▼）有限公司Ｂｏｌｙ Ｍｅｄｉａ Ｃｏｍｍｕｎｉｃａｔｉｏｎｓ（Ｓｈｅｎｚｈｅｎ）Ｃｏ．，Ｌｔｄ． マルチスペクトル感光素子及びそのサンプリング方法
JP5746496B2 (ja) * 2010-12-03 2015-07-08 キヤノン株式会社 撮像装置
JP5885403B2 (ja) * 2011-06-08 2016-03-15 キヤノン株式会社 撮像装置
JP5871496B2 (ja) 2011-06-24 2016-03-01 キヤノン株式会社 撮像装置及びその駆動方法
FR2977371B1 (fr) * 2011-06-30 2013-08-02 Trixell Matrice de pixels a groupements programmables
US9091666B2 (en) 2012-02-09 2015-07-28 Kla-Tencor Corp. Extended defect sizing range for wafer inspection
US20130256510A1 (en) * 2012-03-29 2013-10-03 Omnivision Technologies, Inc. Imaging device with floating diffusion switch
JP2014209696A (ja) 2012-07-23 2014-11-06 ソニー株式会社 固体撮像装置、信号読み出し方法、および電子機器
JP6091218B2 (ja) * 2013-01-08 2017-03-08 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法。
JP2015015596A (ja) * 2013-07-04 2015-01-22 キヤノン株式会社 撮像装置及びその駆動方法
CN111885319B (zh) 2013-11-18 2024-02-06 株式会社尼康 固态成像元件及成像装置
TWI539816B (zh) * 2013-12-25 2016-06-21 恆景科技股份有限公司 影像感測器
CN104767946B (zh) * 2014-01-02 2018-04-06 恒景科技股份有限公司 影像传感器
JP6075646B2 (ja) 2014-03-17 2017-02-08 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
US9720109B2 (en) * 2014-12-24 2017-08-01 General Electric Company Systems and methods for minimizing silicon photomultiplier signal propagation delay dispersion and improve timing
WO2018062303A1 (ja) * 2016-09-29 2018-04-05 株式会社ニコン 撮像素子および電子カメラ
KR102406996B1 (ko) * 2017-04-07 2022-06-08 삼성전자주식회사 이미지 센서
EP3762967A1 (en) 2018-03-09 2021-01-13 Imasenic Advanced Imaging, S.L. Binning pixels
KR102012767B1 (ko) * 2018-03-14 2019-08-21 (주) 픽셀플러스 이미지 센서
JP7329318B2 (ja) 2018-10-25 2023-08-18 ソニーグループ株式会社 固体撮像装置及び撮像装置
JP6825675B2 (ja) * 2019-10-25 2021-02-03 株式会社ニコン 撮像素子及び撮像装置
US11468146B2 (en) 2019-12-06 2022-10-11 Globalfoundries U.S. Inc. Array of integrated pixel and memory cells for deep in-sensor, in-memory computing
US11195580B2 (en) * 2020-02-26 2021-12-07 Globalfoundries U.S. Inc. Integrated pixel and two-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing
US11653122B2 (en) * 2020-03-13 2023-05-16 Sony Semiconductor Solutions Corporation Solid-state image capturing element with floating diffusion layers processing a signal undergoing pixel addition
KR20210133341A (ko) * 2020-04-28 2021-11-08 삼성전자주식회사 이미지 센서

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080011680A (ko) * 2005-06-01 2008-02-05 이스트맨 코닥 캄파니 이미지 센서 및 카메라
WO2008088879A1 (en) * 2007-01-19 2008-07-24 Eastman Kodak Company Image sensor with gain control

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164831A (en) * 1990-03-15 1992-11-17 Eastman Kodak Company Electronic still camera providing multi-format storage of full and reduced resolution images
US5541402A (en) * 1994-10-17 1996-07-30 At&T Corp. Imaging active pixel device having a non-destructive read-out gate
EP1102323B1 (en) * 1999-11-19 2012-08-15 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Method for detecting electromagnetic radiation using an optoelectronic sensor
EP2290952A3 (en) * 2000-07-27 2011-08-17 Canon Kabushiki Kaisha Image sensing apparatus
US6914227B2 (en) * 2001-06-25 2005-07-05 Canon Kabushiki Kaisha Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system
JP3890207B2 (ja) * 2001-06-25 2007-03-07 キヤノン株式会社 撮像装置および撮像システム
FR2839841A1 (fr) * 2002-05-17 2003-11-21 St Microelectronics Sa Pixel actif cmos a bruit reduit
US6878918B2 (en) * 2003-01-09 2005-04-12 Dialdg Semiconductor Gmbh APS pixel with reset noise suppression and programmable binning capability
JP5066704B2 (ja) * 2005-02-04 2012-11-07 国立大学法人東北大学 固体撮像装置、および固体撮像装置の動作方法
US7468501B2 (en) 2005-05-12 2008-12-23 California Institute Of Technology Linear dynamic range enhancement in a CMOS imager
CN101213829A (zh) * 2005-06-01 2008-07-02 伊斯曼柯达公司 具有可选择装仓的cmos图像传感器像素
JP2007150008A (ja) * 2005-11-29 2007-06-14 Nikon Corp 固体撮像装置
JP4941131B2 (ja) * 2007-06-30 2012-05-30 株式会社ニコン 固体撮像素子及び電子カメラ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080011680A (ko) * 2005-06-01 2008-02-05 이스트맨 코닥 캄파니 이미지 센서 및 카메라
WO2008088879A1 (en) * 2007-01-19 2008-07-24 Eastman Kodak Company Image sensor with gain control

Also Published As

Publication number Publication date
EP2321959B1 (en) 2017-08-16
CN102132558B (zh) 2014-04-09
JP2012501578A (ja) 2012-01-19
CN102132558A (zh) 2011-07-20
EP2321959A1 (en) 2011-05-18
US7777171B2 (en) 2010-08-17
JP5562959B2 (ja) 2014-07-30
WO2010027420A1 (en) 2010-03-11
TW201015995A (en) 2010-04-16
US20100051784A1 (en) 2010-03-04
KR20110052720A (ko) 2011-05-18
TWI496464B (zh) 2015-08-11

Similar Documents

Publication Publication Date Title
KR101540656B1 (ko) 전하 영역 합산을 이용하는 이미지 센서 픽셀
CN102057486B (zh) 高动态范围图像传感器
KR101568350B1 (ko) 3ｄ 집적 픽셀에 대한 고 이득 판독 회로
KR101471929B1 (ko) 공유 처리되는 다중 이미지 센서 시스템
KR20100129780A (ko) 2개의 웨이퍼들을 가지는 능동 픽셀 센서
JP5343128B2 (ja) 広開口画像センサ画素
EP2301073B1 (en) Draining residual charge from (ccd) shift registers
US20090283665A1 (en) Image sensor with an aligned optical assembly

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110325

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20110526

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20140324

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150204

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20150707

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150724

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150727

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20180628

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20190624

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20190624

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20200624

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210702

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20220622

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20230626

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20240624

Start annual number: 10

End annual number: 10