JP5562959B2 - 電荷領域加算を有するイメージセンサ画素 - Google Patents

電荷領域加算を有するイメージセンサ画素 Download PDF

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JP5562959B2
JP5562959B2 JP2011524981A JP2011524981A JP5562959B2 JP 5562959 B2 JP5562959 B2 JP 5562959B2 JP 2011524981 A JP2011524981 A JP 2011524981A JP 2011524981 A JP2011524981 A JP 2011524981A JP 5562959 B2 JP5562959 B2 JP 5562959B2
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transistor
floating diffusion
pixels
summing
image sensor
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JP2012501578A (ja
JP2012501578A5 (enExample
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パークス，クリストファー
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2011524981A 2008-08-26 2009-08-24 電荷領域加算を有するイメージセンサ画素 Active JP5562959B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/198,264 US7777171B2 (en) 2008-08-26 2008-08-26 In-pixel summing of charge generated by two or more pixels having two reset transistors connected in series
US12/198,264 2008-08-26
PCT/US2009/004813 WO2010027420A1 (en) 2008-08-26 2009-08-24 Image sensor pixel with charge domain summing

Publications (3)

Publication Number Publication Date
JP2012501578A JP2012501578A (ja) 2012-01-19
JP2012501578A5 JP2012501578A5 (enExample) 2012-08-09
JP5562959B2 true JP5562959B2 (ja) 2014-07-30

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JP2011524981A Active JP5562959B2 (ja) 2008-08-26 2009-08-24 電荷領域加算を有するイメージセンサ画素

Country Status (7)

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US (1) US7777171B2 (enExample)
EP (1) EP2321959B1 (enExample)
JP (1) JP5562959B2 (enExample)
KR (1) KR101540656B1 (enExample)
CN (1) CN102132558B (enExample)
TW (1) TWI496464B (enExample)
WO (1) WO2010027420A1 (enExample)

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JP5775570B2 (ja) * 2010-06-01 2015-09-09 博立▲碼▼杰通▲訊▼（深▲せん▼）有限公司Ｂｏｌｙ Ｍｅｄｉａ Ｃｏｍｍｕｎｉｃａｔｉｏｎｓ（Ｓｈｅｎｚｈｅｎ）Ｃｏ．，Ｌｔｄ． マルチスペクトル感光素子及びそのサンプリング方法
JP5746496B2 (ja) * 2010-12-03 2015-07-08 キヤノン株式会社 撮像装置
JP5885403B2 (ja) * 2011-06-08 2016-03-15 キヤノン株式会社 撮像装置
JP5871496B2 (ja) 2011-06-24 2016-03-01 キヤノン株式会社 撮像装置及びその駆動方法
FR2977371B1 (fr) * 2011-06-30 2013-08-02 Trixell Matrice de pixels a groupements programmables
US9091666B2 (en) 2012-02-09 2015-07-28 Kla-Tencor Corp. Extended defect sizing range for wafer inspection
US20130256510A1 (en) * 2012-03-29 2013-10-03 Omnivision Technologies, Inc. Imaging device with floating diffusion switch
JP2014209696A (ja) 2012-07-23 2014-11-06 ソニー株式会社 固体撮像装置、信号読み出し方法、および電子機器
JP6091218B2 (ja) * 2013-01-08 2017-03-08 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法。
JP2015015596A (ja) * 2013-07-04 2015-01-22 キヤノン株式会社 撮像装置及びその駆動方法
CN111885319B (zh) 2013-11-18 2024-02-06 株式会社尼康 固态成像元件及成像装置
TWI539816B (zh) * 2013-12-25 2016-06-21 恆景科技股份有限公司 影像感測器
CN104767946B (zh) * 2014-01-02 2018-04-06 恒景科技股份有限公司 影像传感器
JP6075646B2 (ja) 2014-03-17 2017-02-08 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
US9720109B2 (en) * 2014-12-24 2017-08-01 General Electric Company Systems and methods for minimizing silicon photomultiplier signal propagation delay dispersion and improve timing
WO2018062303A1 (ja) * 2016-09-29 2018-04-05 株式会社ニコン 撮像素子および電子カメラ
KR102406996B1 (ko) * 2017-04-07 2022-06-08 삼성전자주식회사 이미지 센서
EP3762967A1 (en) 2018-03-09 2021-01-13 Imasenic Advanced Imaging, S.L. Binning pixels
KR102012767B1 (ko) * 2018-03-14 2019-08-21 (주) 픽셀플러스 이미지 센서
JP7329318B2 (ja) 2018-10-25 2023-08-18 ソニーグループ株式会社 固体撮像装置及び撮像装置
JP6825675B2 (ja) * 2019-10-25 2021-02-03 株式会社ニコン 撮像素子及び撮像装置
US11468146B2 (en) 2019-12-06 2022-10-11 Globalfoundries U.S. Inc. Array of integrated pixel and memory cells for deep in-sensor, in-memory computing
US11195580B2 (en) * 2020-02-26 2021-12-07 Globalfoundries U.S. Inc. Integrated pixel and two-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing
US11653122B2 (en) * 2020-03-13 2023-05-16 Sony Semiconductor Solutions Corporation Solid-state image capturing element with floating diffusion layers processing a signal undergoing pixel addition
KR20210133341A (ko) * 2020-04-28 2021-11-08 삼성전자주식회사 이미지 센서

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JP4941131B2 (ja) * 2007-06-30 2012-05-30 株式会社ニコン 固体撮像素子及び電子カメラ

Also Published As

Publication number Publication date
EP2321959B1 (en) 2017-08-16
CN102132558B (zh) 2014-04-09
JP2012501578A (ja) 2012-01-19
CN102132558A (zh) 2011-07-20
EP2321959A1 (en) 2011-05-18
US7777171B2 (en) 2010-08-17
WO2010027420A1 (en) 2010-03-11
TW201015995A (en) 2010-04-16
KR101540656B1 (ko) 2015-07-30
US20100051784A1 (en) 2010-03-04
KR20110052720A (ko) 2011-05-18
TWI496464B (zh) 2015-08-11

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