CN101960596B - 具有两个晶片的有源像素传感器 - Google Patents
具有两个晶片的有源像素传感器 Download PDFInfo
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- CN101960596B CN101960596B CN200980108186.XA CN200980108186A CN101960596B CN 101960596 B CN101960596 B CN 101960596B CN 200980108186 A CN200980108186 A CN 200980108186A CN 101960596 B CN101960596 B CN 101960596B
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- 235000012431 wafers Nutrition 0.000 title description 54
- 230000007246 mechanism Effects 0.000 claims abstract description 39
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 238000007599 discharging Methods 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 230000000994 depressogenic effect Effects 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/058,845 US7858915B2 (en) | 2008-03-31 | 2008-03-31 | Active pixel sensor having two wafers |
US12/058,845 | 2008-03-31 | ||
PCT/US2009/001951 WO2009123693A1 (en) | 2008-03-31 | 2009-03-27 | Active pixel sensor having two wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101960596A CN101960596A (zh) | 2011-01-26 |
CN101960596B true CN101960596B (zh) | 2012-07-18 |
Family
ID=40720010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980108186.XA Active CN101960596B (zh) | 2008-03-31 | 2009-03-27 | 具有两个晶片的有源像素传感器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7858915B2 (zh) |
EP (1) | EP2257982A1 (zh) |
JP (1) | JP2011517510A (zh) |
KR (1) | KR20100129780A (zh) |
CN (1) | CN101960596B (zh) |
TW (1) | TWI442555B (zh) |
WO (1) | WO2009123693A1 (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100922924B1 (ko) * | 2007-12-28 | 2009-10-22 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
US20100149379A1 (en) * | 2008-12-16 | 2010-06-17 | Summa Joseph R | Image sensor with three-dimensional interconnect and ccd |
US9196547B2 (en) | 2009-04-03 | 2015-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual shallow trench isolation and related applications |
US20110156197A1 (en) * | 2009-12-31 | 2011-06-30 | Tivarus Cristian A | Interwafer interconnects for stacked CMOS image sensors |
FR2958079B1 (fr) * | 2010-03-26 | 2012-09-21 | Commissariat Energie Atomique | Dispositif imageur cmos a architecture en trois dimensions |
TWI513301B (zh) * | 2010-06-02 | 2015-12-11 | Sony Corp | 半導體裝置,固態成像裝置及相機系統 |
US20120002092A1 (en) | 2010-06-30 | 2012-01-05 | Guidash Robert M | Low noise active pixel sensor |
JP5570377B2 (ja) * | 2010-09-30 | 2014-08-13 | キヤノン株式会社 | 固体撮像装置 |
US8969779B2 (en) * | 2011-02-11 | 2015-03-03 | Nokia Corporation | Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor |
US8637800B2 (en) * | 2011-04-19 | 2014-01-28 | Altasens, Inc. | Image sensor with hybrid heterostructure |
DE102011101835A1 (de) * | 2011-05-16 | 2012-11-22 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
US9070611B2 (en) | 2011-07-29 | 2015-06-30 | Semiconductor Components Industries, Llc | Image sensor with controllable vertically integrated photodetectors |
US8736728B2 (en) | 2011-07-29 | 2014-05-27 | Truesense Imaging, Inc. | Image sensor with controllable vertically integrated photodetectors |
US8730362B2 (en) | 2011-07-29 | 2014-05-20 | Truesense Imaging, Inc. | Image sensor with controllable vertically integrated photodetectors |
US8829637B2 (en) | 2011-07-29 | 2014-09-09 | Semiconductor Components Industries, Llc | Image sensor with controllable vertically integrated photodetectors using a buried layer |
US8339494B1 (en) * | 2011-07-29 | 2012-12-25 | Truesense Imaging, Inc. | Image sensor with controllable vertically integrated photodetectors |
US8946612B2 (en) | 2011-07-29 | 2015-02-03 | Semiconductor Components Industries, Llc | Image sensor with controllable vertically integrated photodetectors |
US8890047B2 (en) * | 2011-09-21 | 2014-11-18 | Aptina Imaging Corporation | Stacked-chip imaging systems |
US8686342B2 (en) * | 2012-04-09 | 2014-04-01 | Omnivision Technologies, Inc. | Double-sided image sensor formed on a single semiconductor wafer die |
US8773562B1 (en) | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
JP5962533B2 (ja) * | 2013-02-13 | 2016-08-03 | ソニー株式会社 | 固体撮像素子、駆動方法、および撮像装置 |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
CN104967763B (zh) * | 2015-06-09 | 2019-04-26 | 联想(北京)有限公司 | 一种图像采集器件、图像采集方法及电子设备 |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
JP6963873B2 (ja) * | 2017-05-26 | 2021-11-10 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、固体撮像素子の製造方法および電子機器 |
FR3114439B1 (fr) * | 2020-09-18 | 2022-10-07 | Commissariat Energie Atomique | Circuit microelectronique tridimensionnel a repartition optimisee de ses fonctions numerique et analogique |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1941390A (zh) * | 2005-09-29 | 2007-04-04 | 三星电子株式会社 | 具有两个半导体层的像素、图像传感器及图像处理系统 |
EP1883112A1 (fr) * | 2006-07-24 | 2008-01-30 | St Microelectronics S.A. | Capteur d'images éclairé par la face arrière à température de substrat uniforme |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3031606B2 (ja) | 1995-08-02 | 2000-04-10 | キヤノン株式会社 | 固体撮像装置と画像撮像装置 |
WO2000021280A1 (en) * | 1998-10-07 | 2000-04-13 | California Institute Of Technology | Silicon-on-insulator (soi) active pixel sensors with the photosites implemented in the substrate |
JP3713418B2 (ja) | 2000-05-30 | 2005-11-09 | 光正 小柳 | 3次元画像処理装置の製造方法 |
JP5105695B2 (ja) | 2001-11-05 | 2012-12-26 | カミヤチョウ アイピー ホールディングス | 固体イメージセンサおよびその製造方法 |
US6927432B2 (en) * | 2003-08-13 | 2005-08-09 | Motorola, Inc. | Vertically integrated photosensor for CMOS imagers |
US7160753B2 (en) * | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
JP4742523B2 (ja) | 2004-06-14 | 2011-08-10 | ソニー株式会社 | 固体撮像素子及びその駆動方法 |
KR100610481B1 (ko) * | 2004-12-30 | 2006-08-08 | 매그나칩 반도체 유한회사 | 수광영역을 넓힌 이미지센서 및 그 제조 방법 |
KR100782463B1 (ko) * | 2005-04-13 | 2007-12-05 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
FR2888989B1 (fr) * | 2005-07-21 | 2008-06-06 | St Microelectronics Sa | Capteur d'images |
JP2007228460A (ja) * | 2006-02-27 | 2007-09-06 | Mitsumasa Koyanagi | 集積センサを搭載した積層型半導体装置 |
DE102006012908A1 (de) | 2006-03-10 | 2007-09-13 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Elektroden-Membran-Einheit und Brennstoffzelle |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
-
2008
- 2008-03-31 US US12/058,845 patent/US7858915B2/en active Active
-
2009
- 2009-03-27 JP JP2011501844A patent/JP2011517510A/ja active Pending
- 2009-03-27 EP EP09728194A patent/EP2257982A1/en not_active Withdrawn
- 2009-03-27 WO PCT/US2009/001951 patent/WO2009123693A1/en active Application Filing
- 2009-03-27 CN CN200980108186.XA patent/CN101960596B/zh active Active
- 2009-03-27 KR KR1020107024103A patent/KR20100129780A/ko not_active Application Discontinuation
- 2009-03-30 TW TW098110514A patent/TWI442555B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1941390A (zh) * | 2005-09-29 | 2007-04-04 | 三星电子株式会社 | 具有两个半导体层的像素、图像传感器及图像处理系统 |
EP1883112A1 (fr) * | 2006-07-24 | 2008-01-30 | St Microelectronics S.A. | Capteur d'images éclairé par la face arrière à température de substrat uniforme |
Non-Patent Citations (1)
Title |
---|
JP特开2001-339057A 2001.12.07 |
Also Published As
Publication number | Publication date |
---|---|
TWI442555B (zh) | 2014-06-21 |
CN101960596A (zh) | 2011-01-26 |
WO2009123693A1 (en) | 2009-10-08 |
US20090242950A1 (en) | 2009-10-01 |
TW201001689A (en) | 2010-01-01 |
EP2257982A1 (en) | 2010-12-08 |
US7858915B2 (en) | 2010-12-28 |
KR20100129780A (ko) | 2010-12-09 |
JP2011517510A (ja) | 2011-06-09 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: OMNIVISION TECH INC. Free format text: FORMER OWNER: KODAK COMPANY Effective date: 20110706 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: NEW YORK STATE, THE USA TO: CALIFORNIA STATE, THE USA |
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Effective date of registration: 20110706 Address after: American California Applicant after: Omnivision Tech Inc. Address before: American New York Applicant before: Eastman Kodak Corp. |
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C14 | Grant of patent or utility model | ||
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: American California Patentee after: OmniVision Technologies, Inc. Address before: American California Patentee before: Omnivision Technologies Inc. |