CN102017155B - 从(ccd)移位寄存器排出剩余电荷 - Google Patents
从(ccd)移位寄存器排出剩余电荷 Download PDFInfo
- Publication number
- CN102017155B CN102017155B CN200980115859.4A CN200980115859A CN102017155B CN 102017155 B CN102017155 B CN 102017155B CN 200980115859 A CN200980115859 A CN 200980115859A CN 102017155 B CN102017155 B CN 102017155B
- Authority
- CN
- China
- Prior art keywords
- shift register
- storage region
- charge storage
- charge
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012546 transfer Methods 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 abstract description 6
- 230000015654 memory Effects 0.000 description 19
- 206010070834 Sensitisation Diseases 0.000 description 17
- 230000008313 sensitization Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 238000004364 calculation method Methods 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
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- 230000003760 hair shine Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- 238000007619 statistical method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/118,131 US8134630B2 (en) | 2008-05-09 | 2008-05-09 | System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains |
US12/118,131 | 2008-05-09 | ||
PCT/US2009/002843 WO2009137079A1 (en) | 2008-05-09 | 2009-05-07 | Draining residual charge from (ccd) shift registers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102017155A CN102017155A (zh) | 2011-04-13 |
CN102017155B true CN102017155B (zh) | 2013-07-17 |
Family
ID=40983322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980115859.4A Expired - Fee Related CN102017155B (zh) | 2008-05-09 | 2009-05-07 | 从(ccd)移位寄存器排出剩余电荷 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8134630B2 (zh) |
EP (1) | EP2301073B1 (zh) |
JP (1) | JP2011524659A (zh) |
KR (1) | KR20110006677A (zh) |
CN (1) | CN102017155B (zh) |
WO (1) | WO2009137079A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10462391B2 (en) * | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
CN108174116B (zh) * | 2017-12-28 | 2019-11-15 | 中国科学院西安光学精密机械研究所 | 一种ccd曝光时间控制方法 |
KR20200128109A (ko) * | 2018-03-02 | 2020-11-11 | 에이아이스톰, 아이엔씨. | 전하 도메인 수학적 엔진 및 방법 |
CN113661536B (zh) * | 2020-01-21 | 2023-01-31 | 京东方科技集团股份有限公司 | 电子装置、驱动方法和采集方法 |
CN112383726B (zh) * | 2020-10-30 | 2021-07-23 | 厦门大学 | 一种ccd高速信号采集方法和装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593303A (en) * | 1981-07-10 | 1986-06-03 | Fairchild Camera & Instrument Corporation | Self-aligned antiblooming structure for charge-coupled devices |
EP0614225A1 (en) * | 1993-03-03 | 1994-09-07 | Koninklijke Philips Electronics N.V. | Charge coupled device |
US6040859A (en) * | 1995-11-30 | 2000-03-21 | Sanyo Electric Co., Ltd. | Image sensing apparatus and method for discharging dark current charge stored therein |
EP1137071A2 (en) * | 2000-03-22 | 2001-09-26 | Eastman Kodak Company | Fast-dump structure for full-frame image sensors with lateral overflow drain antiblooming structures |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4338298B2 (ja) * | 2000-10-04 | 2009-10-07 | 富士フイルム株式会社 | 電荷転送装置およびその駆動方法 |
JP2002335450A (ja) * | 2001-05-09 | 2002-11-22 | Fuji Film Microdevices Co Ltd | 固体撮像素子の駆動方法および固体撮像素子 |
JP3795808B2 (ja) * | 2002-01-28 | 2006-07-12 | 富士フイルムマイクロデバイス株式会社 | 固体撮像素子およびこれを用いた撮像装置 |
US7492404B2 (en) | 2004-08-27 | 2009-02-17 | Eastman Kodak Company | Fast flush structure for solid-state image sensors |
-
2008
- 2008-05-09 US US12/118,131 patent/US8134630B2/en active Active
-
2009
- 2009-05-07 JP JP2011508509A patent/JP2011524659A/ja active Pending
- 2009-05-07 KR KR1020107025157A patent/KR20110006677A/ko not_active Application Discontinuation
- 2009-05-07 CN CN200980115859.4A patent/CN102017155B/zh not_active Expired - Fee Related
- 2009-05-07 EP EP09743066.4A patent/EP2301073B1/en not_active Not-in-force
- 2009-05-07 WO PCT/US2009/002843 patent/WO2009137079A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593303A (en) * | 1981-07-10 | 1986-06-03 | Fairchild Camera & Instrument Corporation | Self-aligned antiblooming structure for charge-coupled devices |
EP0614225A1 (en) * | 1993-03-03 | 1994-09-07 | Koninklijke Philips Electronics N.V. | Charge coupled device |
US6040859A (en) * | 1995-11-30 | 2000-03-21 | Sanyo Electric Co., Ltd. | Image sensing apparatus and method for discharging dark current charge stored therein |
EP1137071A2 (en) * | 2000-03-22 | 2001-09-26 | Eastman Kodak Company | Fast-dump structure for full-frame image sensors with lateral overflow drain antiblooming structures |
Also Published As
Publication number | Publication date |
---|---|
US8134630B2 (en) | 2012-03-13 |
KR20110006677A (ko) | 2011-01-20 |
WO2009137079A1 (en) | 2009-11-12 |
EP2301073A1 (en) | 2011-03-30 |
JP2011524659A (ja) | 2011-09-01 |
US20090278971A1 (en) | 2009-11-12 |
EP2301073B1 (en) | 2014-11-19 |
CN102017155A (zh) | 2011-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: IMAGE SENSING TECHNOLOGY PURCHASE GROUP Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK Effective date: 20120605 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: American New York Applicant after: Chu Saisi Imaging Co.,Ltd. Address before: California, USA Applicant before: Image sensing technology acquisition group |
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COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: IMAGE SENSING TECHNOLOGY PURCHASE GROUP TO: CHUSAISI IMAGING LTD. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20120605 Address after: California, USA Applicant after: Image sensing technology acquisition group Address before: American New York Applicant before: Eastman Kodak Co. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR ELEMENT INDUSTRIES, INC. Free format text: FORMER OWNER: CHUSAISI IMAGING LTD. Effective date: 20140912 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140912 Address after: Arizona USA Patentee after: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC Address before: American New York Patentee before: Chu Saisi Imaging Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130717 Termination date: 20210507 |