CN102124566A - 用于3维合成像素的高增益读取电路 - Google Patents
用于3维合成像素的高增益读取电路 Download PDFInfo
- Publication number
- CN102124566A CN102124566A CN2009801316988A CN200980131698A CN102124566A CN 102124566 A CN102124566 A CN 102124566A CN 2009801316988 A CN2009801316988 A CN 2009801316988A CN 200980131698 A CN200980131698 A CN 200980131698A CN 102124566 A CN102124566 A CN 102124566A
- Authority
- CN
- China
- Prior art keywords
- amplifier
- wafer
- diffusion
- floating
- imageing sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 42
- 238000007667 floating Methods 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 22
- 230000015654 memory Effects 0.000 description 20
- 238000012546 transfer Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/206,919 | 2008-09-09 | ||
US12/206,919 US7965329B2 (en) | 2008-09-09 | 2008-09-09 | High gain read circuit for 3D integrated pixel |
PCT/US2009/004989 WO2010030329A1 (en) | 2008-09-09 | 2009-09-04 | High gain read circuit for 3d integrated pixel |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102124566A true CN102124566A (zh) | 2011-07-13 |
CN102124566B CN102124566B (zh) | 2013-05-29 |
Family
ID=41347849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801316988A Active CN102124566B (zh) | 2008-09-09 | 2009-09-04 | 用于3维合成像素的高增益读取电路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7965329B2 (zh) |
EP (1) | EP2324506B1 (zh) |
JP (1) | JP5507563B2 (zh) |
KR (1) | KR101568350B1 (zh) |
CN (1) | CN102124566B (zh) |
TW (1) | TWI507033B (zh) |
WO (1) | WO2010030329A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103426892A (zh) * | 2012-05-18 | 2013-12-04 | 台湾积体电路制造股份有限公司 | 垂直集成的图像传感器芯片及其形成方法 |
CN103456750A (zh) * | 2012-06-01 | 2013-12-18 | 台湾积体电路制造股份有限公司 | 具有高占空因数的图像传感器 |
CN103579263A (zh) * | 2012-08-09 | 2014-02-12 | 台湾积体电路制造股份有限公司 | 具有堆叠结构的cmos图像传感器芯片及其形成方法 |
CN104051487A (zh) * | 2013-03-15 | 2014-09-17 | 台湾积体电路制造股份有限公司 | 成像传感器结构和方法 |
CN112310135A (zh) * | 2020-10-19 | 2021-02-02 | 锐芯微电子股份有限公司 | 传感器结构和传感器结构的形成方法 |
CN114690156A (zh) * | 2020-12-31 | 2022-07-01 | 武汉市聚芯微电子有限责任公司 | 一种飞行时间传感单元、传感器及其解调方法 |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2154879A1 (en) * | 2008-08-13 | 2010-02-17 | Thomson Licensing | CMOS image sensor with selectable hard-wired binning |
US20100149379A1 (en) * | 2008-12-16 | 2010-06-17 | Summa Joseph R | Image sensor with three-dimensional interconnect and ccd |
US8913166B2 (en) * | 2009-01-21 | 2014-12-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus |
JP4835710B2 (ja) * | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
JP5489570B2 (ja) * | 2009-07-27 | 2014-05-14 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP5489705B2 (ja) * | 2009-12-26 | 2014-05-14 | キヤノン株式会社 | 固体撮像装置および撮像システム |
US20110156197A1 (en) * | 2009-12-31 | 2011-06-30 | Tivarus Cristian A | Interwafer interconnects for stacked CMOS image sensors |
US9426390B2 (en) * | 2010-03-04 | 2016-08-23 | BAE Systems Imaging Solutions Inc. | CMOS imaging array with improved noise characteristics |
KR101784676B1 (ko) * | 2010-03-08 | 2017-10-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조방법 |
JP5751766B2 (ja) * | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5500007B2 (ja) * | 2010-09-03 | 2014-05-21 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
JP5570377B2 (ja) * | 2010-09-30 | 2014-08-13 | キヤノン株式会社 | 固体撮像装置 |
JP5716347B2 (ja) * | 2010-10-21 | 2015-05-13 | ソニー株式会社 | 固体撮像装置及び電子機器 |
DE102011101835A1 (de) * | 2011-05-16 | 2012-11-22 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
FR2975529B1 (fr) * | 2011-05-20 | 2013-09-27 | Soc Fr Detecteurs Infrarouges Sofradir | Circuit de detection a faible flux et faible bruit |
US9190434B2 (en) * | 2011-09-30 | 2015-11-17 | Omnivision Technologies, Inc. | CMOS image sensor with reset shield line |
US8461660B2 (en) * | 2011-09-30 | 2013-06-11 | Omnivision Technologies, Inc. | CMOS image sensor with reset shield line |
EP2800356A1 (en) | 2011-12-27 | 2014-11-05 | Sony Corporation | Image pickup element, image pickup apparatus, electronic device, and image pickup method |
US8957358B2 (en) | 2012-04-27 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor chips with stacked scheme and methods for forming the same |
US8629524B2 (en) | 2012-04-27 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for vertically integrated backside illuminated image sensors |
JP6183718B2 (ja) * | 2012-06-25 | 2017-08-23 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
WO2014002366A1 (ja) * | 2012-06-27 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置 |
US8933544B2 (en) | 2012-07-12 | 2015-01-13 | Omnivision Technologies, Inc. | Integrated circuit stack with integrated electromagnetic interference shielding |
JP2014022561A (ja) | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
KR101933994B1 (ko) | 2012-10-16 | 2018-12-31 | 삼성전자주식회사 | 깊이 영상과 컬러 영상을 획득하는 픽셀 구조를 가진 이미지 센서 |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
US20150091114A1 (en) * | 2013-10-01 | 2015-04-02 | Forza Silicon Corporation | Elemental Stacked Image Sensor |
US20150122971A1 (en) * | 2013-11-01 | 2015-05-07 | Silicon Optronics, Inc. | 3d stacked image sensor |
US20150123173A1 (en) * | 2013-11-01 | 2015-05-07 | Silicon Optronics, Inc. | 3d stacked image sensor with pmos components |
US9654714B2 (en) * | 2013-11-01 | 2017-05-16 | Silicon Optronics, Inc. | Shared pixel with fixed conversion gain |
JP2016042650A (ja) * | 2014-08-18 | 2016-03-31 | ソニー株式会社 | 半導体光検出装置、放射線計数装置、および、半導体光検出装置の制御方法 |
US9332200B1 (en) | 2014-12-05 | 2016-05-03 | Qualcomm Incorporated | Pixel readout architecture for full well capacity extension |
US9774801B2 (en) * | 2014-12-05 | 2017-09-26 | Qualcomm Incorporated | Solid state image sensor with enhanced charge capacity and dynamic range |
KR102261268B1 (ko) | 2014-12-29 | 2021-06-09 | 삼성전자주식회사 | 이미지 센서 |
CN104795418B (zh) * | 2015-04-24 | 2018-09-18 | 上海珏芯光电科技有限公司 | 感光成像装置及其制造方法 |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
US10566375B2 (en) | 2016-01-29 | 2020-02-18 | Semiconductor Components Industries, Llc | Stacked-die image sensors with shielding |
JP2017168812A (ja) * | 2016-03-10 | 2017-09-21 | パナソニックIpマネジメント株式会社 | 撮像装置 |
US10269854B2 (en) * | 2016-04-26 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rerouting method and a structure for stacked image sensors |
US10062722B2 (en) * | 2016-10-04 | 2018-08-28 | Omnivision Technologies, Inc. | Stacked image sensor with shield bumps between interconnects |
US10855941B2 (en) | 2016-12-09 | 2020-12-01 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic device |
JP6949557B2 (ja) * | 2017-05-25 | 2021-10-13 | キヤノン株式会社 | 撮像装置、撮像システム、移動体 |
WO2020100806A1 (en) * | 2018-11-16 | 2020-05-22 | Sony Semiconductor Solutions Corporation | Imaging device |
US11079282B2 (en) * | 2018-11-28 | 2021-08-03 | Semiconductor Components Industries, Llc | Flexible interconnect sensing devices and related methods |
JP2021005654A (ja) * | 2019-06-26 | 2021-01-14 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
TW202109616A (zh) * | 2019-06-26 | 2021-03-01 | 日商索尼半導體解決方案公司 | 攝像裝置 |
US11438486B2 (en) | 2019-08-26 | 2022-09-06 | Qualcomm Incorporated | 3D active depth sensing with laser pulse train bursts and a gated sensor |
CN114667605A (zh) | 2019-11-29 | 2022-06-24 | 索尼半导体解决方案公司 | 摄像装置和电子设备 |
DE102020111562A1 (de) | 2020-04-28 | 2021-10-28 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
DE102021128022B3 (de) | 2021-10-27 | 2023-02-02 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5164831A (en) | 1990-03-15 | 1992-11-17 | Eastman Kodak Company | Electronic still camera providing multi-format storage of full and reduced resolution images |
GB2319394B (en) | 1996-12-27 | 1998-10-28 | Simage Oy | Bump-bonded semiconductor imaging device |
US6642081B1 (en) * | 2002-04-11 | 2003-11-04 | Robert Patti | Interlocking conductor method for bonding wafers to produce stacked integrated circuits |
AU2003276401A1 (en) | 2002-10-25 | 2004-05-13 | Goldpower Limited | Circuit substrate and method |
KR100782463B1 (ko) | 2005-04-13 | 2007-12-05 | (주)실리콘화일 | 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법 |
FR2888989B1 (fr) * | 2005-07-21 | 2008-06-06 | St Microelectronics Sa | Capteur d'images |
JP2007184341A (ja) * | 2006-01-05 | 2007-07-19 | Yamaha Corp | 半導体装置及び回路基板 |
JP4566929B2 (ja) * | 2006-03-03 | 2010-10-20 | 富士通株式会社 | 撮像装置 |
KR100770690B1 (ko) * | 2006-03-15 | 2007-10-29 | 삼성전기주식회사 | 카메라모듈 패키지 |
JP2008042825A (ja) * | 2006-08-10 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
KR100860466B1 (ko) * | 2006-12-27 | 2008-09-25 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그 제조방법 |
JP2008171871A (ja) * | 2007-01-09 | 2008-07-24 | Hitachi Displays Ltd | 高感度光センサ素子及びそれを用いた光センサ装置 |
-
2008
- 2008-09-09 US US12/206,919 patent/US7965329B2/en active Active
-
2009
- 2009-09-04 CN CN2009801316988A patent/CN102124566B/zh active Active
- 2009-09-04 KR KR1020117005643A patent/KR101568350B1/ko active IP Right Grant
- 2009-09-04 JP JP2011526047A patent/JP5507563B2/ja active Active
- 2009-09-04 EP EP09789262.4A patent/EP2324506B1/en active Active
- 2009-09-04 WO PCT/US2009/004989 patent/WO2010030329A1/en active Application Filing
- 2009-09-08 TW TW098130248A patent/TWI507033B/zh active
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103426892A (zh) * | 2012-05-18 | 2013-12-04 | 台湾积体电路制造股份有限公司 | 垂直集成的图像传感器芯片及其形成方法 |
CN103456750A (zh) * | 2012-06-01 | 2013-12-18 | 台湾积体电路制造股份有限公司 | 具有高占空因数的图像传感器 |
CN103456750B (zh) * | 2012-06-01 | 2016-08-31 | 台湾积体电路制造股份有限公司 | 具有高占空因数的图像传感器 |
CN103579263A (zh) * | 2012-08-09 | 2014-02-12 | 台湾积体电路制造股份有限公司 | 具有堆叠结构的cmos图像传感器芯片及其形成方法 |
CN108269814A (zh) * | 2012-08-09 | 2018-07-10 | 台湾积体电路制造股份有限公司 | 具有堆叠结构的cmos图像传感器芯片及其形成方法 |
CN104051487A (zh) * | 2013-03-15 | 2014-09-17 | 台湾积体电路制造股份有限公司 | 成像传感器结构和方法 |
CN112310135A (zh) * | 2020-10-19 | 2021-02-02 | 锐芯微电子股份有限公司 | 传感器结构和传感器结构的形成方法 |
CN112310135B (zh) * | 2020-10-19 | 2024-02-06 | 锐芯微电子股份有限公司 | 传感器结构和传感器结构的形成方法 |
CN114690156A (zh) * | 2020-12-31 | 2022-07-01 | 武汉市聚芯微电子有限责任公司 | 一种飞行时间传感单元、传感器及其解调方法 |
CN114690156B (zh) * | 2020-12-31 | 2022-12-20 | 武汉市聚芯微电子有限责任公司 | 一种飞行时间传感单元、传感器及其解调方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102124566B (zh) | 2013-05-29 |
EP2324506A1 (en) | 2011-05-25 |
EP2324506B1 (en) | 2013-05-08 |
WO2010030329A1 (en) | 2010-03-18 |
JP5507563B2 (ja) | 2014-05-28 |
KR101568350B1 (ko) | 2015-11-12 |
US7965329B2 (en) | 2011-06-21 |
KR20110050670A (ko) | 2011-05-16 |
US20100060764A1 (en) | 2010-03-11 |
TWI507033B (zh) | 2015-11-01 |
JP2012502469A (ja) | 2012-01-26 |
TW201015991A (en) | 2010-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102124566B (zh) | 用于3维合成像素的高增益读取电路 | |
CN101523602B (zh) | 具有两个晶片的有源像素传感器 | |
CN101960596B (zh) | 具有两个晶片的有源像素传感器 | |
US9231011B2 (en) | Stacked-chip imaging systems | |
CN1234234C (zh) | 固体摄像器件及使用该固体摄像器件的设备 | |
KR102146231B1 (ko) | 고체 촬상 소자 및 촬상 장치 | |
US20120002092A1 (en) | Low noise active pixel sensor | |
KR101782334B1 (ko) | 촬상 소자, 촬상장치 및 휴대전화기 | |
US20210152771A1 (en) | Backside illuminated global shutter image sensor with an analog memory charge coupled device | |
JP6825675B2 (ja) | 撮像素子及び撮像装置 | |
JP7160129B2 (ja) | 撮像素子および撮像装置 | |
JP2021073772A (ja) | 固体撮像素子及び撮像装置 | |
JP2022174347A (ja) | 撮像素子及び撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: OMNIVISION TECHNOLOGIES, INC. Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK Effective date: 20111114 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20111114 Address after: California, USA Applicant after: Omnivision Technologies, Inc. Address before: American New York Applicant before: Eastman Kodak Co. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: OmniVision Technologies, Inc. Address before: California, USA Patentee before: Omnivision Technologies, Inc. |