CN102132168B - 磁场检测元件及信号传递元件 - Google Patents
磁场检测元件及信号传递元件 Download PDFInfo
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- CN102132168B CN102132168B CN200980132270.5A CN200980132270A CN102132168B CN 102132168 B CN102132168 B CN 102132168B CN 200980132270 A CN200980132270 A CN 200980132270A CN 102132168 B CN102132168 B CN 102132168B
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- magnetic field
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP251594/08 | 2008-09-29 | ||
JP2008251594 | 2008-09-29 | ||
PCT/JP2009/066948 WO2010035873A1 (ja) | 2008-09-29 | 2009-09-29 | 磁界検出素子および信号伝達素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102132168A CN102132168A (zh) | 2011-07-20 |
CN102132168B true CN102132168B (zh) | 2013-07-24 |
Family
ID=42059860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980132270.5A Expired - Fee Related CN102132168B (zh) | 2008-09-29 | 2009-09-29 | 磁场检测元件及信号传递元件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8963544B2 (zh) |
EP (1) | EP2343566A4 (zh) |
JP (1) | JP5055515B2 (zh) |
CN (1) | CN102132168B (zh) |
WO (1) | WO2010035873A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102419425B (zh) * | 2011-09-09 | 2013-12-04 | 兰州大学 | 一种磁电阻自动测量装置及其测量方法 |
CN103293492B (zh) * | 2012-02-27 | 2016-06-01 | 国民技术股份有限公司 | 一种磁信号检测装置及方法 |
WO2013153986A1 (ja) * | 2012-04-09 | 2013-10-17 | 三菱電機株式会社 | 磁気センサ装置 |
JP6099588B2 (ja) * | 2014-03-20 | 2017-03-22 | 三菱電機株式会社 | 磁気結合型アイソレータ |
JP6390728B2 (ja) | 2017-02-22 | 2018-09-19 | Tdk株式会社 | 磁気センサとその製造方法 |
JP6972900B2 (ja) * | 2017-10-19 | 2021-11-24 | Tdk株式会社 | 磁気センサ |
Citations (4)
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---|---|---|---|---|
JP2000516714A (ja) * | 1996-08-16 | 2000-12-12 | ノンボラタイル エレクトロニクス,インコーポレイテッド | 磁流センサ |
CN1394284A (zh) * | 2000-10-26 | 2003-01-29 | 财团法人电气磁气材料研究所 | 薄膜磁传感器 |
CN1573350A (zh) * | 2003-06-02 | 2005-02-02 | 财团法人电气磁气材料研究所 | 薄膜磁传感器及其制造方法 |
CN101065721A (zh) * | 2004-09-27 | 2007-10-31 | 皇家飞利浦电子股份有限公司 | 用于输入设备的磁传感器 |
Family Cites Families (34)
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US3987485A (en) * | 1973-02-20 | 1976-10-19 | Matsushita Electric Industrial Co., Ltd. | Magnetic head with thin film components |
US4097802A (en) * | 1975-06-30 | 1978-06-27 | International Business Machines Corporation | Magnetoresistive field sensor with a magnetic shield which prevents sensor response at fields below saturation of the shield |
US4301418A (en) * | 1978-09-13 | 1981-11-17 | The United States Of America As Represented By The Secretary Of The Navy | Magnetoresistive power amplifier |
US4613918A (en) * | 1982-04-14 | 1986-09-23 | Matsushita Electric Industrial Co., Ltd. | Perpendicular magnetic playback head and a perpendicular magnetic recording and reproducing device |
NL8201846A (nl) * | 1982-05-06 | 1983-12-01 | Philips Nv | Sensor met een magneetveldgevoelig element en werkwijze voor het vervaardigen daarvan. |
NL8301188A (nl) * | 1983-04-05 | 1984-11-01 | Philips Nv | Magneetkop met een dunne strook magnetoweerstandmateriaal als leeselement. |
KR100225179B1 (ko) * | 1992-11-30 | 1999-10-15 | 니시무로 타이죠 | 박막 자기 헤드 및 자기 저항 효과형 헤드 |
US5453291A (en) * | 1993-05-25 | 1995-09-26 | Honda Giken Kogyo Kabushiki Kaisha | FRP member and method of detecting internal damage therein |
US5552589A (en) * | 1993-08-31 | 1996-09-03 | Eastman Kodak Company | Permanent magnet assembly with MR element for detection/authentication of magnetic documents |
JPH08212512A (ja) * | 1995-02-03 | 1996-08-20 | Hitachi Ltd | 磁気記憶装置及びそれに用いる薄膜磁気ヘッドとその製造方法 |
JPH08279112A (ja) | 1995-04-05 | 1996-10-22 | Ricoh Co Ltd | 磁気ヘッド |
US5729137A (en) * | 1996-10-22 | 1998-03-17 | Nonvolatile Electronics, Incorporated | Magnetic field sensors individualized field reducers |
JPH10241123A (ja) * | 1997-02-28 | 1998-09-11 | Nec Corp | 磁気抵抗効果ヘッド |
JP3466470B2 (ja) * | 1998-03-18 | 2003-11-10 | 財団法人電気磁気材料研究所 | 薄膜磁気抵抗素子 |
US6519124B1 (en) | 2000-03-27 | 2003-02-11 | Tdk Corporation | Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide |
JP2002100010A (ja) * | 2000-09-26 | 2002-04-05 | Toshiba Corp | ヨーク型再生磁気ヘッドおよびその製造方法ならびに磁気ディスク装置 |
US7145331B2 (en) * | 2001-07-19 | 2006-12-05 | Matsushita Electric Industrial Co., Ltd. | Magnetic sensor having a closed magnetic path formed by soft magnetic films |
GB0126285D0 (en) * | 2001-11-01 | 2002-01-02 | Isis Innovation | Improved moving coil transducer |
JP4487472B2 (ja) * | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ |
JP3835447B2 (ja) * | 2002-10-23 | 2006-10-18 | ヤマハ株式会社 | 磁気センサ、同磁気センサの製造方法及び同製造方法に適したマグネットアレイ |
EP1588177A1 (en) * | 2003-01-31 | 2005-10-26 | Commissariat A L'energie Atomique | Device for sensing a magnetic field |
JP4055609B2 (ja) * | 2003-03-03 | 2008-03-05 | 株式会社デンソー | 磁気センサ製造方法 |
JP2004356338A (ja) * | 2003-05-28 | 2004-12-16 | Res Inst Electric Magnetic Alloys | 薄膜磁気センサ及びその製造方法 |
JP4334914B2 (ja) | 2003-05-28 | 2009-09-30 | 財団法人電気磁気材料研究所 | 薄膜磁気センサ |
US7271586B2 (en) * | 2003-12-04 | 2007-09-18 | Honeywell International Inc. | Single package design for 3-axis magnetic sensor |
US7466126B2 (en) * | 2004-07-12 | 2008-12-16 | General Electric Company | Universal sensor probe with adjustable members configured to fit between a plurality of slot openings of varying widths |
JP2006100424A (ja) | 2004-09-28 | 2006-04-13 | Tdk Corp | 磁気記憶装置 |
JP4953569B2 (ja) * | 2004-11-29 | 2012-06-13 | 公益財団法人電磁材料研究所 | 薄膜磁気抵抗素子並びに薄膜磁気抵抗素子を用いた磁気センサ |
JP2006287081A (ja) * | 2005-04-04 | 2006-10-19 | Fuji Electric Holdings Co Ltd | スピン注入磁区移動素子およびこれを用いた装置 |
JP4665751B2 (ja) * | 2005-12-22 | 2011-04-06 | 株式会社日立製作所 | 高抵抗磁石を用いたmri装置 |
JP4194110B2 (ja) * | 2007-03-12 | 2008-12-10 | オムロン株式会社 | 磁気カプラ素子および磁気結合型アイソレータ |
JP2008249556A (ja) * | 2007-03-30 | 2008-10-16 | Tdk Corp | 磁気センサ |
JP2009054219A (ja) * | 2007-08-24 | 2009-03-12 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録ヘッド |
JP5151551B2 (ja) * | 2008-02-27 | 2013-02-27 | 大同特殊鋼株式会社 | 薄膜磁気センサ |
-
2009
- 2009-09-29 WO PCT/JP2009/066948 patent/WO2010035873A1/ja active Application Filing
- 2009-09-29 JP JP2009223760A patent/JP5055515B2/ja active Active
- 2009-09-29 CN CN200980132270.5A patent/CN102132168B/zh not_active Expired - Fee Related
- 2009-09-29 US US13/062,818 patent/US8963544B2/en not_active Expired - Fee Related
- 2009-09-29 EP EP09816285.2A patent/EP2343566A4/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000516714A (ja) * | 1996-08-16 | 2000-12-12 | ノンボラタイル エレクトロニクス,インコーポレイテッド | 磁流センサ |
CN1394284A (zh) * | 2000-10-26 | 2003-01-29 | 财团法人电气磁气材料研究所 | 薄膜磁传感器 |
CN1573350A (zh) * | 2003-06-02 | 2005-02-02 | 财团法人电气磁气材料研究所 | 薄膜磁传感器及其制造方法 |
CN101065721A (zh) * | 2004-09-27 | 2007-10-31 | 皇家飞利浦电子股份有限公司 | 用于输入设备的磁传感器 |
Also Published As
Publication number | Publication date |
---|---|
US20110273174A1 (en) | 2011-11-10 |
CN102132168A (zh) | 2011-07-20 |
US8963544B2 (en) | 2015-02-24 |
JP2010101882A (ja) | 2010-05-06 |
WO2010035873A1 (ja) | 2010-04-01 |
JP5055515B2 (ja) | 2012-10-24 |
EP2343566A4 (en) | 2014-04-16 |
EP2343566A1 (en) | 2011-07-13 |
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GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Kyoto Japan Patentee after: Omron Corp. Patentee after: Research Institute of electromagnetic materials Address before: Kyoto Japan Patentee before: Omron Corp. Patentee before: THE FOUNDATION THE Research Institute FOR ELECTRIC AND MAGNETIC MATERIALS |
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Effective date of registration: 20160311 Address after: Miyagi Prefecture in Japan Patentee after: Research Institute of electromagnetic materials Address before: Kyoto Japan Patentee before: Omron Corp. Patentee before: Research Institute of electromagnetic materials |
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