CN102089121A - Wafer polishing method and double side polishing apparatus - Google Patents

Wafer polishing method and double side polishing apparatus Download PDF

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Publication number
CN102089121A
CN102089121A CN2009801271864A CN200980127186A CN102089121A CN 102089121 A CN102089121 A CN 102089121A CN 2009801271864 A CN2009801271864 A CN 2009801271864A CN 200980127186 A CN200980127186 A CN 200980127186A CN 102089121 A CN102089121 A CN 102089121A
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China
Prior art keywords
chip
grinding
thickness
mentioned
polishing apparatus
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CN2009801271864A
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CN102089121B (en
Inventor
古川大辅
浅井一将
木田隆広
田中忠雄
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority claimed from JP2008197741A external-priority patent/JP5028354B2/en
Priority claimed from JP2008197478A external-priority patent/JP4654275B2/en
Priority claimed from JP2008197508A external-priority patent/JP4955624B2/en
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN102089121A publication Critical patent/CN102089121A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

Provided is a wafer polishing method wherein the both surfaces of a wafer are simultaneously polished by sandwiching the wafer and sliding the wafer with a pressure by means of at least a lower plate, which is rotary-driven and has a flat polishing upper surface, an upper plate, which is arranged to face the lower plate, is rotary-driven and has a flat polishing lower surface, and a carrier having a wafer holding hole for holding the wafer. The wafer is polished while having the thickness thereof measured from a plurality of holes arranged between the rotating center and the periphery of the upper plate or the lower plate, and a polishing slurry is switched to that of a different polishing speed while the wafer is being polished. Thus, the wafer having high planarity and high smoothness is manufactured with high productivity and high yield.

Description

The Ginding process of chip and double-side polishing apparatus
Technical field
The present invention relates to a kind of Ginding process and double-side polishing apparatus of chip, specifically relate to a kind of Ginding process and double-side polishing apparatus of chip, can produce semiconductor chip efficiently with high flatness.
Background technology
Manufacture method as existing chip, if the manufacture method with silicon is that example is done explanation, at first, by Czochralski method (Czochralskimethod (CZ method)) etc., cultivate the monocrystalline silicon crystal bar, resulting monocrystalline silicon crystal bar section is produced after the silicon operation of this silicon being carried out in regular turn chamfer machining, polishing, etching etc., then, implement to the grinding step of a side interarea mirror-polishing of major general's chip.
In the grinding step of this chip, when for example grinding silicon two-sided, the situation that adopts double-side polishing apparatus is arranged.
As this kind double-side polishing apparatus, usually adopt a kind of double-side polishing apparatus with so-called 4 direction modes of planetary gear structure, this planetary gear structure between the internal gear of the central gear of central part and peripheral part, disposes in order to keep the carrier (carrier) of chip.
The double-side polishing apparatus of this 4 direction mode, silicon is inserted and remains in a plurality of carriers that are formed with the chip retaining hole, and on one side supply with grinding milk from the top of the silicon that is being held, make on one side in the face of posting the table back side that upper millstone that abrasive cloth forms and lower millstone compress each chip on the face of chip, and make lower millstone do rotation relatively, meanwhile, make carrier do rotation and revolution by central gear and internal gear, thus, energy while grinding chip is two-sided.
But even if use double-side polishing apparatus as described above to grind, also have: even if can obtain smooth chip, its productivity is low; Or, on the contrary, even if the productivity height, the such problem of flatness variation of chip.
This is because the grinding rate of chip and flatness have the cause of choice (tradeoff) relation.And, in order to tackle this kind problem,, need reduce grinding rate as much as possible, very reposefully processing in the fine finishining stage.
Therefore, adopt a kind of on identical mill, by change particle diameter, the different grinding agent (for example with reference to patent documentation 1) of pH carries out abrasive method; Or by alleviating load when finishing soon in processing, reduce the method that mode such as rotating speed is ground (for example with reference to patent documentation 2), and can grind to form smooth and smooth chip.
In addition, even if use double-side polishing apparatus as described above to grind, the grinding rate of chip, owing to the clamp for machining of abrasive cloth, carrier etc., the deterioration of material, each grinding is all inequality.So,,, have the different such problem of thickness of the chip after the grinding then owing to the difference of grinding rate if fixedly milling time is ground.
Therefore, while disclose the double-side polishing apparatus that a kind of thickness of measuring the chip in grinding grinds.
For example, as the invention that patent documentation 3, patent documentation 4 are put down in writing, it is to use light reflection interference method, while measure the technology that the thickness of the semiconductor chip in grinding grinds, if according to this technology, abradant surface can be made high flatness.
In addition, if for example according to the invention of patent documentation 3, uses a kind of light that sees through the wavelength of chip, can be on one side from the surface of semiconductor chip towards the back side, along thickness direction, the mensuration light beam is moved forms focus, Yi Bian measure thickness.
But, in the technology of in this patent documentation 3, being put down in writing, owing to form focus along thickness, the influence of the chip vibration in being ground easily, the actual chip thickness and the deviation of measured value become big.And then, owing to, have influence on mensuration easily from measuring the optical attenuation effect that distance caused that thing is counted, thus need make the point that forms focus, near output/input point.Therefore, because the mist that grinding milk caused (mist) in the light path etc., and have by stained problem.
In addition,, in grinding, measure light, have to increase the mensuration light frequency that reception comes from the appointed area of abradant surface in order to improve the mensuration precision.But, the confocal point mode as patent documentation 3, its bad response, and the little shortcoming of receive frequency is arranged.
[prior art document]
[patent documentation]
Patent documentation 1: TOHKEMY 2006-324417 communique;
Patent documentation 2: Japanese kokai publication hei 9-38849 communique;
Patent documentation 3: TOHKEMY 2002-59364 communique;
Patent documentation 4: Japanese kokai publication hei 7-4921 communique;
Patent documentation 5: No. 3327817, Japan's special permission.
Summary of the invention
The method of being put down in writing in the above-mentioned patent documentation 1,2 is carried out the replacing of grinding condition (kind of grinding agent, grind load, with respect to the speed of the abradant surface that posts the mill that abrasive cloth forms) in once grinding circulation (one chip is that 1 slice, batch mode is a multi-disc).
But this kind method does not estimate that the clamp for machining of abrasive cloth, carrier etc., the deterioration of material change grinding condition.Therefore, the periphery that chip form takes place the often unfavorable condition on limit etc. of collapsing.This be because: owing to grind, above-mentioned material produces deterioration, even if grind with same apparatus, the same terms, the cause that grinding condition (grinding rate etc.) also can change.
And then, the change opportunity of grinding condition, owing to be regardless of the clamp for machining of abrasive cloth, carrier etc., the deterioration of material, and always be fixing, so the deterioration along with abrasive cloth can take place, milling time is elongated, productivity worsens such problem, or amount of grinding too much or the problem of deficiency etc.
In addition, if the thickness that sampling measurement grinds in front and back or the grinding is carried out adjustment, then suppress to take place the too much or not enough problem of amount of grinding easily, still will interrupt grinding in the grinding way, productivity worsens significantly, and unrealistic.
In addition, when carrying out the grinding of chip, because the deterioration of abrasive cloth etc., grinding rate is different.So as shown in Figure 5, under fast situation of grinding rate and slow situation, the milling time till the target thickness α is very different.Therefore, constant if the target thickness α when grinding finished is made as, required time of grinding step and unstable then, and become problem.In addition, when milling time being made as constant (fixing), under the fast situation of grinding rate, become polishing excessively, the undesirable condition of many scars etc. takes place, cause yield rate to worsen significantly; On the contrary, under the slow situation of grinding rate, then grind not enough and become the chip of flatness difference, yield rate worsens too significantly.
And, in Fig. 6, demonstrate a kind of thickness by the chip in the mensuration grinding, can make the grinding of chip finish the situation that fixed thickness becomes to equal target thickness α.
So,, can make the thickness that machines equal target thickness, but in fast situation of grinding rate and slow situation, both milling times have very big difference by measuring the thickness of chip.Therefore, the required time of grinding step is not fixed, so chip quality also becomes instability, and becomes a bottleneck (difficulty).
And, in patent documentation 3,4 double-side polishing apparatus of being put down in writing,,, grind while measure the thickness of the chip in grinding in real-time mode by light reflection interference method.In this double-side polishing apparatus, the perforate (this perforate and above-mentioned light path are overlapping with the hole) of hole and abrasive cloth of light path in the light transmission abrasive disk, and with a kind of material that can not cause the damage of scar etc. and be difficult for being encroached on abrasive material owing to the slurries of grinding agent etc., installed as the window material, and with becoming one of abrasive cloth, and this incorporate abrasive cloth be attached on the abrasive disk use.
By this kind lapping device, the thickness in the grinding of chip can pass through this window material, and measures by the reflection interference method, and in the moment that arrives target thickness, automatically makes to grind to stop.
For example, in the invention that patent documentation 4 is put down in writing, window is set, measures light and then use a kind of light that sees through the wavelength of chip in the non-abradant surface side of chip.In addition, in the invention that patent documentation 5 is put down in writing, in the top side face of the lower millstone that is connected with the abradant surface side of membrane chip, use a kind of with window material or embolism (plug) be set as with becoming one of abrasive cloth after abrasive cloth, and this window material or the embolism mensuration window as chip thickness used.
But, in the invention that above-mentioned patent documentation 3～5 is put down in writing since abrasive cloth and window material are made integrated, as long as discard window material, the abrasive cloth of just having to exchange.In addition, compared to the consumption of abrasive cloth, the consumption of window material is fast, and before finishing the service life of abrasive cloth, just can arrive the service life of window material, and must discard both simultaneously, produces unnecessary waste.
And then, the invention of being put down in writing by patent documentation 5 as can be known, the abradant surface side that the window material is positioned at grinding charge is the upside of mill just, because light path system is to be positioned at vertical lower, in order to improve the air-tightness of window material, needs to use a kind of firm closing cock.Therefore, be not easy to exchange, during maintenance cost, efficient is low.
The present invention puts in view of the above problems and develops, and its purpose is to provide a kind of Ginding process of chip, can produce the chip of high flatness and high flatness with high productivity, yield rate goodly.
In addition, the object of the present invention is to provide a kind of double-side polishing apparatus, at the double-side polishing apparatus that can grind while the thickness of measuring chip, can not be subjected to the chip vibration in grinding is the influence of the evaluated error that representative was caused, and can grind while measure the thickness of chip with high accuracy.
In order to address the above problem, the invention provides a kind of Ginding process of chip, at least, lower millstone by the rotation driving, upper millstone and carrier that rotation drives, come the clamping said chip, and push slip, thus, side by side grind two-sided, this lower millstone has smooth grinding end face, and this upper millstone is configured in the face of above-mentioned lower millstone and has smooth grinding bottom surface, and this carrier has in order to keep the chip retaining hole of chip, the Ginding process of this chip is characterised in that, on one side, measure the thickness of said chip, Yi Bian grind from the pivot that is located at above-mentioned upper millstone or above-mentioned lower millstone and a plurality of holes between the periphery, and in the grinding way of said chip, be replaced with the different grinding milk of grinding rate.
So, grind at the same time two-sided the time, measure the thickness of chip,, can estimate the thickness of chip in real time Yi Bian grind Yi Bian utilize.Therefore, need not interrupt grinding, just can learn the period that to change the different slurries of grinding rate and the terminal point (finishing a little) of grinding state etc., and can shorten the required time of milled processed.
In addition, for example utilize the fast grinding milk of grinding rate to carry out the grinding of chip at first, and in grinding the way, be replaced with the slower grinding milk of grinding rate, thus, can carry out rough lapping with condition at a high speed earlier, carry out low speed afterwards but the high grinding of precision.Therefore, required time, the productivity height of grinding of chip be can shorten, and the flatness and the flatness of chip can not be undermined.
By these formations, can be with high productivity, good ground of yield rate grinding chip, and can produce the chip of high flatness and high flatness.
In addition, be preferably above-mentioned a plurality of holes are located on the above-mentioned upper millstone.
Measure the thickness of the chip the grinding by a plurality of holes on being located at upper millstone, the leakage of grinding milk can not take place from the hole, grinding milk can not enter in the hole yet, does not prevent the countermeasure of leaking so do not need to implement.Thus, the maintenance transfiguration of mill is easy, in addition, when measuring the thickness of chip, can suppress to take place the possibility of obstacle.
In addition, be preferably in a batch mode and grind said chip.
The Ginding process of chip of the present invention is a kind of method that can produce smooth chip with high productivity, therefore, by grinding in a batch mode, can further improve productivity.In addition, in the present invention,, grind on one side because on one side measure the thickness of chip from a plurality of holes, so even if as the situation of grinding multi-plate chip as batch mode simultaneously, also can measure the thickness of whole chips, and the energy precision is measured goodly.
In addition, the Determination of thickness method of said chip is preferably the light reflection interference method that utilization is carried out by Wavelength variable type infrared laser.
So, use Wavelength variable type infrared laser,, just can measure the thickness of the chip in the grinding in high-precision mode by estimating reflecting spectrum (at the interference of light state of chip surface and backside reflection) at chip surface.
In addition, the replacing of above-mentioned grinding milk is preferably basis from beginning to grind elapsed time, grinding rate, amount of grinding or abrasive cloth at least a the deciding of counting service life opportunity.
So, the replacing of grinding milk is by according to service life of abrasive cloth, decide from beginning to grind elapsed time of counting, grinding rate, amount of grinding etc., for the variation of the grinding condition that causes because of the clamp for machining of abrasive cloth, carrier etc., the deterioration of material etc., the ground of adjusting to changed conditions is in addition corresponding.Thereby, can more easily reach the chip form of target, especially can easily reach periphery collapse the limit improvement, flatness stabilisation, want amount of grinding of removing etc.
In addition, be preferably the Determination of thickness data of using said chip, and in the grinding way of said chip, change is ground more than at least a among the rotary speed of load, the rotary speed of above-mentioned upper millstone, above-mentioned lower millstone.
So, in the grinding way of chip, be not only and change the different slurries of grinding rate, and among the rotary speed of rotary speed, lower millstone of load, upper millstone more than one are ground in change at least, thus in the grinding of chip, the variation of the grinding condition that the deterioration by grinding the mechanism adopted etc. causes, can be more subtly in addition suitably corresponding.Thereby, can obtain the very high chip of flatness on the surface after a kind of grinding is finished.
In addition, in the present invention, provide a kind of double-side polishing apparatus, possess at least: the lower millstone that rotation drives, it has smooth grinding end face; The upper millstone that rotation drives, it is configured in the face of above-mentioned lower millstone and has smooth grinding bottom surface; And carrier, it has in order to keep the chip retaining hole of chip; This double-side polishing apparatus is characterised in that to have: a plurality of holes, and it is arranged between the pivot and periphery of above-mentioned upper millstone or above-mentioned lower millstone; Chip thickness is measured mechanism, in grinding, in real-time mode, from these a plurality of holes, measures the thickness of said chip; This chip thickness is measured mechanism, is to be fixed on the stiff end of this lapping device, and this stiff end is not above-mentioned upper millstone or lower millstone.
So,,, can increase the Determination of thickness frequency on upper millstone or lower millstone, measure precision and can improve by the hole in order to the thickness of measuring chip is set at a kind of two-sided double-side polishing apparatus of grinding chip simultaneously.Particularly,, help to improve the mensuration precision especially owing to can side by side measure the thickness of chip from a plurality of holes for the grinder of batch mode of grinding multi-disc simultaneously.
In addition, by being measured mechanism, chip thickness is fixed on stiff end, rather than the upper millstone of the influence of the vibration in being ground easily or lower millstone, the thickness of chip can be under the situation of the influence that can not be vibrated etc., measured, and the Determination of thickness precision can be improved.
According to these effects, because can be in real-time mode, precision is learnt the thickness of the chip in the grinding goodly, and can constitute a kind of double-side polishing apparatus, can easily the thickness of the chip after grinding be made the thickness of target.
In addition, the abradant surface of lower millstone is provided with abrasive cloth and window material on above-mentioned; This abrasive cloth, there is the perforate bigger than the diameter in these holes the position in the above-mentioned a plurality of holes of correspondence; The diameter of this window material is bigger and littler than the hole of abrasive cloth than the hole of above-mentioned mill, and the thickness of this window material is than the thin thickness of abrasive cloth; And above-mentioned window material separates with abrasive cloth, and is fixed on above-mentioned upper millstone or the above-mentioned lower millstone via adhesive linkage.
So, can make:, and post abrasive cloth and window material at the upper millstone that is provided with a plurality of holes in order to the thickness of measuring chip or the abradant surface of lower millstone; This abrasive cloth has the perforate bigger than the diameter in these holes in the position in the above-mentioned a plurality of holes of correspondence; The diameter of this window material is bigger and littler than the hole of abrasive cloth than the hole of above-mentioned mill, and the thickness of this window material is than the thin thickness of abrasive cloth.
Structure if so, the window material can separate and be connected respectively with abrasive cloth.Therefore, when the window material is damaged, do not need to discard the abrasive cloth in service life of no show still as long as exchange damaged window material.In addition, consume fast window material owing to can only exchange, thus the required expense of offal treatment can be reduced, and can reach and cut operating costs.
In addition, because window material and abrasive cloth are independent, so maintenance easily.And then can only exchange the window material, so can not have influence on the thickness measurement of the chip in the grinding, can use abrasive cloth same as before and only exchange the window material because of the service life of window material.Therefore, can constitute a kind of double-side polishing apparatus, can cut the waste, on one side and can grind with high-precision measuring thickness on one side.In the present invention, owing to have a plurality of holes, thus need a plurality of window materials, thereby can correctly carry out thickness measurement, as mentioned above, separate with abrasive cloth, so set the necessity height in service life respectively by the window material.
In addition, said chip thickness measurement mechanism is preferably and possesses Wavelength variable type infrared laser device, and this device sends the laser that sees through the wavelength of chip optically.
So, measure mechanism as chip thickness, by possessing Wavelength variable type infrared laser device, this device sends the laser that sees through the wavelength of chip optically, just can resolve reflecting spectrum (at the interference of light state of chip surface and backside reflection) at chip surface, thus, just can measure the thickness of the chip in the grinding in high-precision mode.
In addition, above-mentioned Wavelength of Laser is preferably and is made as 1575～1775nm.
So, as the laser of measuring usefulness, be the infrared laser of the high speed used etc. of the communication of 1575～1775nm if use a kind of wavelength, then can improve timing resolution, and can estimate the thickness of the chip in the grinding more accurately.
In addition, above-mentioned window material is preferably the laser that is emitted by above-mentioned Wavelength variable type infrared laser device is seen through.
So, if the window material that laser is seen through can suppress because the mensuration that the absorption of the laser in the window material and reflection etc. the are caused decay of laser intensity.Thus, can measure the thickness of chip more accurately.
In addition, said chip thickness measurement mechanism is preferably the integral thickness of measuring said chip.
So, by measuring the integral thickness of chip, can judge the actual (real) thickness of the chip in the grinding, thus, the thickness that can make the chip after the grinding is more near desired value.
In addition, above-mentioned a plurality of holes are preferably in equally spaced mode, are arranged on the periphery of above-mentioned upper millstone.
So, by the hole equally spaced is set, owing to can easily carry out the mensuration of chip thickness, and can grind accurately.And, utilize and be arranged on periphery, can not cause harmful effect to grinding, for example for the double-side polishing apparatus of 4 direction modes, can in grinding, measure the thickness of the chip in all being held.In addition,, can suppress grinding milk and leak, so can make the maintenance transfiguration of mill easy from the hole by being located on the upper millstone.In addition, when measuring the thickness of chip, can suppress to take place the possibility of obstacle.
In addition, fixedly the stiff end of said chip thickness measurement mechanism is preferably the shell that is made as this double-side polishing apparatus.
So; by chip thickness is measured mechanism; be fixed on the shell of this double-side polishing apparatus; thus; can protect chip thickness measurement mechanism, make it avoid the influence of being vibrated, polluting, simultaneously can be from above-mentioned a plurality of holes; the thickness of detection chip accurately is so can measure the thickness of the chip in the grinding more accurately.
In addition, above-mentioned window material is preferably plastic.
So, be used as the window material, can reduce the exchange frequency of window material, and can reduce time and cost that the clearing house needs by the plastics that adopt cheap and excellent in stability.
In addition, double-side polishing apparatus of the present invention wherein, is preferably: if the thickness of above-mentioned window material is made as t w[μ m], its refractive index is made as n wThe thickness of adhesive linkage is made as t 2[μ m]; The thickness of chip is made as t s[μ m], its refractive index is made as n sThe thickness of abrasive cloth is made as t 1[μ m], its compression ratio is made as ζ 1[%/g/cm 2], and will grind maximum load and be made as P[g/cm 2], then satisfy following relational expression:
t 1* ζ 1* P/100＞t w+ t 2, and t wn w＞t sn sOr t wn w＜t sn s
So, if satisfy t 1* ζ 1* P/100＞t w+ t 2, and t wn w＞t sn sOr t wn w＜t sn sRelational expression, then in grinding, can suppress the window material and expose, and can suppress the deterioration that flatness partly takes place at the window material chip from abrasive cloth.
In addition, if satisfy t wn w＞t sn sOr t wn w＜t sn sRelation, for example, when using laser to measure the thickness of chip, at the reverberation of window material reflection with overlapping at the catoptrical crest of chip reflection and situation that detected intensity is reduced can be suppressed, so, can suppress the reduction of mensuration precision.
Thus, can be more easily the thickness of high-precision measuring chip on one side, Yi Bian make the high chip of flatness.
As previously discussed, if Ginding process according to chip of the present invention, the minor variations of the grinding condition in grinding that takes place owing to the deterioration of the clamp for machining that is accompanied by abrasive cloth, carrier etc., material, this deterioration that changes the chip form caused is the periphery limit etc. of collapsing for example, can be improved, and can be obtained the stability of the flatness of each sheet chip.
In addition, owing to grind while the thickness of measuring chip, so the deterioration of the clamp for machining of the corresponding abrasive cloth of energy, carrier etc., material etc., the replacing opportunity of changing grinding agent, and can be with the amount of grinding (amount of removing) that obtain than the short time to reach.Therefore, can improve productivity, thickness deviation is very little and can improve yield rate significantly.
In addition, if according to the present invention, a kind of double-side polishing apparatus can be provided, at the double-side polishing apparatus that can grind while the thickness of measuring chip, can not be subjected to the chip vibration in grinding is the influence of the evaluated error that representative was caused, and can grind while measure the thickness of chip with high accuracy; And particularly less wastage, operation cost are low, and can make the maintenance transfiguration easy, and can measure the thickness of chip in high-precision mode on one side, Yi Bian grind.
Description of drawings
Fig. 1 is when being illustrated in target thickness and changing, the figure from an example of the relation of elapsed time that the beginning grinding chip is counted and chip thickness in the Ginding process of chip of the present invention.
Fig. 2 is the figure from another example of the relation of the beginning elapsed time counted of grinding chip and chip thickness in the Ginding process of expression chip of the present invention.
Fig. 3 is the figure that expression will utilize the flatness of the chip after the Ginding process of embodiments of the invention 1 and the chip of comparative example 2 grinds to compare.
To be expression represent the figure of embodiments of the invention 1 and the surface configuration of the chip of comparative example 2 with contour to Fig. 4.
Fig. 5 is the figure from an example of the relation of the thickness that begins to grind the elapsed time counted and chip in the Ginding process of expression existing chip.
Fig. 6 is the figure from another example of the relation of the thickness that begins to grind the elapsed time counted and chip in the Ginding process of expression existing chip.
Fig. 7 is the skeleton diagram of an example of expression double-side polishing apparatus of the present invention.
Fig. 8 is that expression utilizes the double-side polishing apparatus of embodiment 2 and comparative example 3 to grind the relative frequency of the chip thickness after the grinding of each 300 chip that forms and the chart of cumlative relative frequencysuy.
Fig. 9 is that expression utilizes the double-side polishing apparatus of embodiment 2 and comparative example 3 to grind the chart of the thickness deviation after the grinding of the chip that forms.
Figure 10 is other routine skeleton diagram of expression double-side polishing apparatus of the present invention.
Figure 11 is the schematic configuration (a) of expression window material of the present invention and the figure that this window material is attached to the state (b) on the upper millstone.
Figure 12 observes the upper millstone of other routine double-side polishing apparatus of the present invention and carrier and the figure that obtains from the abradant surface side.
The specific embodiment
Below, explain the present invention with reference to accompanying drawing, but the present invention is not defined to this embodiment.Fig. 7 is the skeleton diagram of an example of expression double-side polishing apparatus of the present invention.
As shown in Figure 7, double-side polishing apparatus 10 of the present invention for the clamping chips W, possesses: the lower millstone 12 that rotation drives has smooth grinding end face 12a; The upper millstone 11 that rotation drives is configured to have smooth grinding bottom surface 11a in the face of lower millstone 12; Carrier 13 has the chip retaining hole that is used for keeping chips W; And chip thickness is measured mechanism 16, the thickness of the chips W in grinding in order to mensuration.
And, in upper millstone 11 sides, be provided with: in order to measure a plurality of holes 14 and the grinding milk feed mechanism 15 of the chip thickness in grinding.
In addition, chip thickness is measured mechanism 16, for example can be made as at least to possess: to the optical unit 16a of chips W irradiating laser, be used for detecting photodetector 16b, the LASER Light Source unit 16c of the laser that reflects back from chips W and calculating and the control module 16d that comes computing chip thickness according to the laser that detects.
So,, be fixed on the upper millstone of influence of the vibration in being ground easily or the place (stiff end) beyond the lower millstone, can prevent from the initial data of measuring, to sneak into the unwanted data of noise etc. by chip thickness being measured mechanism 16.Therefore,, can improve the precision of measurement data significantly compared to prior art,
That is to say, become the correct thickness that can detect chip.
In addition, a plurality of by on upper millstone or lower millstone, being provided with in order to measure the hole of chip thickness, can increase the frequency of thickness measurement.Be particularly suitable for being applied to grind simultaneously the situation of multi-plate chip, thus, can improve and measure precision in batch mode.
According to these effects, compared to prior art, can precision learn the thickness of the chip in the grinding goodly, so can make a kind of double-side polishing apparatus, can easily make chip thickness after the grinding near target thickness.
Herein, the stiff end of fixed chip thickness measurement mechanism 16 can be made as the shell 18 of double-side polishing apparatus.
So,, can protect chip thickness measurement mechanism, make it avoid the influence of being vibrated, polluting if chip thickness is measured on the shell that mechanism is fixed on double-side polishing apparatus.If according to this structure, can suppress noise and sneak in the Determination of thickness data in the grinding, and can suppress data deterioration etc.Therefore, can measure the thickness of the chip in the grinding more accurately.Certainly, also can be located at the stiff end of the ceiling etc. of building, but, be disadvantageous at the aspects such as vibration of maintenance and device.
In addition, chip thickness is measured mechanism 16, can measure integral body (bulk) thickness of chip.
If will utilize chip thickness to measure the chip thickness that mechanism measures, be made as integral thickness, then become the actual (real) thickness of measuring the chip in grinding, so the thickness that can make the chip after the grinding is more near target thickness.Certainly, also can be made as the thickness etc. of the soi layer of soi chip.
And then chip thickness is measured mechanism 16, possesses a kind of Wavelength variable type infrared laser device, can send the laser that can see through the wavelength of chip optically.
So, measure mechanism as chip thickness, if adopt a kind of Wavelength variable type infrared laser device, it can send the laser that sees through the wavelength of chip optically, then can parse: be incident among the laser in the chip, at the surface reflection of chip surface reflection and at the state of the backside reflection interference of light of chip back reflection.If constitute according to this, can estimate the thickness of the chip in the grinding to count the precision of nm～tens of μ m grades.
In addition, by being made as Wavelength variable type infrared laser device, the thickness of the chip that grinds if any changes significantly, if the Wavelength of Laser of change incident, just can be corresponding, do not need to change light source itself.So, can seek to reduce cost.
And, Wavelength of Laser can be made as 1575～1775nm.
So, if wavelength is the laser of 1575～1775nm, then can suppresses to measure the situation that the intensity of reflector laser is reduced with laser, and can measure the thickness of chip accurately.
And a plurality of holes 14 can be set as in equally spaced mode, are arranged on the periphery of upper millstone 11.
So, if in equally spaced mode a plurality of holes are set, then can suppress to take place the situation that grinding milk leaks respectively from a plurality of holes of measuring usefulness at upper millstone.So, can easily carry out the maintenance of mill.The possibility that can suppress in addition, the Determination of thickness generation obstacle of chip.In addition, for example for the double-side polishing apparatus of 4 direction modes, be suitable for measuring the thickness of all chips.
In addition, in grinding, when at least a above in the rotary speed of the rotary speed of wanting to change upper millstone 11, lower millstone 12,, can control upper millstone 11 and lower millstone 12 etc. by in double-side polishing apparatus 10, being equipped with the grinder control module 17 of icon.Thus, can change more than at least a in the rotary speed of the rotary speed of grinding load, upper millstone 11, lower millstone 12.
If according to this structure, in grinding chip, the variation of the grinding condition that causes according to the clamp for machining of measuring that the chip thickness that comes out judges because abrasive cloth, carrier etc., the deterioration of material etc. can be in addition suitably corresponding.Thereby, can stably obtain the very high chip of surface flatness after a kind of grinding is finished.
In addition, about other preferable form of double-side polishing apparatus of the present invention, Yi Bian with reference to Figure 10, Figure 11 and Figure 12, Yi Bian explain.Figure 10 is other routine skeleton diagram of expression double-side polishing apparatus of the present invention.Figure 11 is the schematic configuration of expression window material of the present invention and the figure that this window material is attached to the state on the upper millstone.
Double-side polishing apparatus 10 ' possesses at least: the lower millstone 12 that rotation drives has smooth grinding end face 12a; The upper millstone 11 that rotation drives is configured to have smooth grinding bottom surface 11a in the face of lower millstone 12; Carrier 13 has the chip retaining hole that is used for keeping chips W; A plurality of holes 14 are arranged on the upper millstone 11; Chip thickness is measured mechanism 16, in order to from these a plurality of holes 14, measures the thickness of the chips W in the grinding in real-time mode; And grinding milk feed mechanism 15, in order to supply with grinding milk.
And, at the abradant surface of upper millstone 11, posting abrasive cloth 11b, this abrasive cloth 11b has the perforate bigger than the diameter in hole 14 in the position in a plurality of holes 14 of correspondence; At the abradant surface of lower millstone 12, post abrasive cloth 12b.In addition, window material 19 via adhesive linkage 20, is attached to the abradant surface side in a plurality of holes 14; This window material 19, its diameter is bigger and littler than the hole of abrasive cloth 11b than a plurality of holes 14, and its thickness is than the thin thickness of abrasive cloth 11b.In addition, window material 19,11b separates with abrasive cloth, and is fixed on the upper millstone 11 via adhesive linkage 20.
In addition, chip thickness is measured mechanism 16, identical with Fig. 7, for example can be made as at least and possess: to the optical unit 16a of chips W irradiating laser, be used for detecting photodetector 16b, the LASER Light Source unit 16c of the laser that reflects back from chips W and calculating and the control module 16d that comes computing chip thickness according to the laser that detects.
This kind double-side polishing apparatus because window material and abrasive cloth are made the structure that separates, does not need to discard the abrasive cloth in service life of no show still so need only the damaged window material of exchange, thereby can reduce the exchange frequency of abrasive cloth significantly.So, can reduce the waste of abrasive cloth significantly.Particularly as the present invention, hole and window that a plurality of chip thickness are measured usefulness are set, carry out correct mensuration, so this kind requires strongly.
In addition, owing to be the structure that only the window material is attached on the mill, exchange also can easily be keeped in repair easily.
And then, utilize chip thickness to measure the thickness that mechanism measures the chip in the grinding, thus, when the thickness of the chip in grinding arrives desired value, just can stop to grind, and can prevent because overgrinding or to grind the chip surface that deficiency causes coarse, and can obtain a kind of smooth chip.
Herein, as adhesive linkage 20, preferable use two-sided tape.
If two-sided tape not only can easily be pasted the window material, and cheap.And then, when using optical system,,, become easier exchange so the deviation of setting angle can be little of negligible degree, thereby do not need optical axis is installed adjustment because two-sided tape is thin, unevenness is little as chip thickness mensuration mechanism.
In addition, Figure 12 is that expression is observed the figure that upper millstone 11 obtains with carrier 13 from the abradant surface side, and as shown in the drawing, a plurality of holes 14 can be set as in equally spaced mode, are arranged on the periphery of upper millstone.
So, utilize a plurality of holes are located on the upper millstone, the window material also is fixed on the upper millstone, so do not need to prevent the countermeasure of slurries leakage etc.; In addition, the grinding milk that disperses, when exchange window material, as long as just utilize water easily to clean, it is easy to keep in repair also transfiguration.
And then, chip thickness is measured mechanism 16 and is preferably: on the vertical direction of the below of the top of the upper millstone 11 of double-side polishing apparatus 10 ' or lower millstone 12, keep people's distance of operation safely, and be fixed on double-side polishing apparatus 10 ' the body stiff end in addition.So, only otherwise chip thickness is measured mechanism is arranged on upper millstone or lower millstone and on every side, just can not be vulnerable to the influence of mill vibration up and down, thus, can carry out high-precision chip thickness and measure.And then, utilize constant distance at interval, also can reduce the pollution that causes owing to grinding milk.
Herein, identical with Fig. 7, chip thickness is measured mechanism, can measure integral body (bulk) thickness of chip.
If will utilize chip thickness to measure the chip thickness that mechanism measures, be made as integral thickness, then become the actual (real) thickness of measuring the chip in grinding, so the thickness that can make the chip after the grinding is more near target thickness.
In addition, identical with Fig. 7, chip thickness is measured mechanism, possesses a kind of Wavelength variable type infrared laser device, can send the laser that can see through the wavelength of chip optically.
So, measure mechanism as chip thickness, if adopt a kind of Wavelength variable type infrared laser device, it can send the laser that sees through the wavelength of chip optically, then can parse among the laser that is incident in the chip, at the surface reflection of chip surface reflection and at the state of the backside reflection interference of light of chip back reflection.If constitute according to this, can measure the thickness of the chip in the grinding to count the precision of nm～tens of μ m grades.
In addition, by being made as Wavelength variable type infrared laser device, the thickness of the chip that grinds if any changes significantly, if the Wavelength of Laser of change incident, just can be corresponding, do not need to change light source itself.So, can seek to reduce cost.
And then the window material can be set as the laser (optically) that is emitted by Wavelength variable type infrared laser device is seen through.
So, utilization is made as the window material laser is seen through, and can suppress because the mensuration that the absorption of the laser in the window material and reflection etc. the are caused decay of laser intensity.Thus, can measure the thickness of chip more accurately.
And the window material can be made as plastics system.Herein, this plastic window material also comprises the thin slice that comes out with plastic production.
So, if plastic window material, because excellent in stability can reduce the frequency that exchanges the window material.In addition, since cheap, so can reduce the required cost of exchange window material.
Be made as t as if thickness herein, with the window material w[μ m], its refractive index is made as n wThe thickness of adhesive linkage is made as t 2[μ m]; The thickness of chip is made as t s[μ m], its refractive index is made as n sThe thickness of abrasive cloth is made as t 1[μ m], its compression ratio is made as ζ 1[%/g/cm 2], and will grind maximum load and be made as P[g/cm 2], then can be made as and satisfy following relational expression:
t 1* ζ 1* P/100＞t w+ t 2, and t wn w＞t sn sOr t wn w＜t sn s
So, by satisfying t 1* ζ 1* P/100＞t w+ t 2Relation, in grinding, can suppress the window material and expose from abrasive cloth, so can make the more excellent chip of a kind of flatness at thickness direction.
In addition, by satisfying t wn w＞t sn sOr t wn w＜t sn sRelation, for example, when using laser to measure the thickness of chip, at the reverberation of window material reflection with overlapping at the catoptrical crest of chip reflection and situation that detected intensity is reduced can be suppressed.So, can measure the thickness of chip more accurately.
And, about using the Ginding process of the chip of the present invention that this kind double-side polishing apparatus carries out, particularly, be not limited thereto kind of a method.
At first, the chip that will want to grind is placed in the carrier.
Then,, come the clamping chip according to the grinding bottom surface of upper millstone, the grinding end face and the carrier of lower millstone, while and supply with grinding milk upper millstone and lower millstone rotated in horizontal plane, begin to grind.
At this moment,, measure the thickness of chip, grind on one side on one side from being located at a plurality of holes on upper millstone or the lower millstone.
Thus, needn't interrupt grinding, just can learn the thickness of the chip in the grinding, particularly can learn the chip thickness in the grinding at any time, so on one side can judge the target thickness that whether reaches chip, Yi Bian grind.Therefore, needn't interrupt grinding, can judge whether just to arrive target thickness that the result can shorten and grind the time that is spent.
In addition, even if fixing milling time not also can make target thickness with chip,, worsen and can suppress flatness so overgrinding or deficiency can not take place.That is the deterioration of other kind that also can corresponding (solution) abrasive cloth.
In addition, in the Ginding process of chip of the present invention,, be replaced with the different grinding milk of grinding rate on a certain opportunity.
For example, in grinding initial stage, the grinding milk fast according to grinding rate is to carry out rough lapping (high grinding rate condition) at a high speed.Then, for example become the moment of target thickness γ, change at the thickness of chip.In this changes, in grinding the way, be replaced with the slow grinding milk of grinding rate, carry out the good grinding of precision (low grinding rate condition) with low speed.
If this kind Ginding process can shorten the chip that adds up to and grind the time that is spent.In addition, in the fine finishining stage, owing to be to be replaced with the high grinding milk of precision to grind, so can not sacrifice the flatness of the chip after the grinding.Therefore, can obtain the high chip of flatness and flatness with high productivity.
At this moment, in the present invention, measure chip thickness from a plurality of holes because be, even if so be the situation of grinding multi-plate chip in batch mode simultaneously, also can measure the thickness of whole chips, owing to can measure thickness with high accuracy, so high-precision grinding is possible.
Can measure the thickness of chip from being located at a plurality of holes on the upper millstone herein.
By measuring the thickness of chip from being located at a plurality of holes on the upper millstone, owing to the hole can be located at the top of chip, so can suppress the leakage of grinding milk.Thus, becoming does not need to implement the countermeasure that prevents that slurries from leaking, and can make easy to maintenanceization of mill, certainly, can measure the thickness of chip from being located at a plurality of holes on the lower millstone yet.
In addition, the mensuration of chip thickness can utilize the light reflection interference method of being carried out by Wavelength variable type infrared laser to measure.
If like this according to " the Wavelength variable laser " of length scanning at high speed reflected intensity at chip surface, the wavelength dispersion (reflecting spectrum is at the interference of light state of chip surface and backside reflection) of reconstruct (reconstruction) reflection, carry out the light reflection interference method of frequency resolution, then can measure the thickness of chip in high-precision mode.
In the present invention, on the replacing opportunity of grinding milk, the energy basis is from beginning to grind elapsed time, grinding rate, amount of grinding or abrasive cloth at least a the deciding of counting service life.
The grinding condition of the grinding rate of chip etc. can change according to the deterioration state of the clamp for machining of abrasive cloth, carrier etc., material etc.
But, in the present invention, owing to correctly measure chip thickness on one side one by one from a plurality of holes, grind on one side, so when the replacing that will determine grinding milk during opportunity, according to the service life of adopting abrasive cloth, from beginning to grind elapsed time, grinding rate or the amount of grinding of counting, just can be for the variation a little of the grinding condition of chip, the ground of adjusting to changed conditions is in addition corresponding.If according to this kind structure, can make the chip form after the grinding stable, and planarization accurately, can improve the periphery limit of collapsing especially.In addition, can easily chip thickness be made target thickness.
In addition, in grinding, can use the Determination of thickness data of chip, and in the grinding of chip way, change is ground more than at least a among the rotary speed of rotary speed, lower millstone of load, upper millstone.
So, in the grinding way of chip, be replaced with the different slurries of grinding rate, and grind by change at least more than at least a among the rotary speed of rotary speed, lower millstone of load, upper millstone, can be more subtly with grinding rate change freely in grinding.Therefore, even if in the grinding of chip, the suitably variation of corresponding grinding condition.Thereby, can make a kind of very high chip of flatness that grinds the surface after the end.
And, in the present invention, can come grinding chip in a batch mode.
The Ginding process of chip of the present invention is a kind of method that can produce smooth chip with high productivity.Therefore, by grinding, can improve productivity more in a batch mode.
Herein, use accompanying drawing to be described more specifically situation, but be not limited to this kind situation certainly according to replacing opportunity of changing grinding milk the service life of abrasive cloth.
As mentioned above, not only can be according to from beginning to grind elapsed time, grinding rate or the amount of grinding of counting, decide replacing opportunity, certainly also can comprehensive most kinds of factors change replacing opportunity.
At first, key diagram 1.Fig. 1 is the situation that is illustrated in the opportunity of changing according to target thickness, the example from the relation of elapsed time that the beginning grinding chip is counted and chip thickness in the Ginding process of chip of the present invention.
So, Yi Bian on one side owing to measure thickness at any time and grind,, also can make the deviation of final resulting chip thickness little so can target thickness positively carry out the replacing of slurries.
This situation if the speed that the high speed of phase I is ground is fast, then can reach the amount of removing (target thickness γ) of regulation at short notice, but because to grind at a high speed, so chip form worsens easily.Therefore, by reason, the low speed that carry out second stage for more time grinds, and repairs shape.On the other hand, because the deterioration of abrasive cloth etc., the speed that the high speed of phase I is ground is slack-off, then till the specific thickness, needs long-time, but, by reason, chip form can become well, so in the low speed of second stage grinds, can be at short notice, chip form is finished in fine finishining.But, as described above, if only carry out the replacing of slurries with target thickness or the amount of removing (amount of grinding), the shape that then in the phase I, worsens, and can't in the low speed of second stage grinds, fully repair or become the long phase I that need carry out more than the necessary degree, the grinding of second stage, and need further to improve.
To this, for example shown in Figure 2, along with the deterioration of abrasive cloth, can automatically change target thickness γ when utilizing initial grinding milk and the ratio of accurately machined target thickness α.But target thickness α is identical with Fig. 1.
The deterioration of this abrasive cloth is to decide according to the grinding rate of being obtained by the resulting thickness data of thickness measurement in grinding.In addition, grinding rate and the relation that adds up between the milling time when accumulation in advance utilizes the abrasive cloth of identical type can make the replacing condition of the correspondence table of average grinding rate and total milling time and high speed grinding milk, low speed grinding milk in advance.
This situation, at first, the beginning grinding chip by measuring the chip thickness in grinding, is monitored grinding rate at any time and is added up to milling time, and with reference to known correspondence table and condition table, just can automatically change suitable γ (target thickness).
For example, under the situation at the initial stage in service life of bringing into use abrasive cloth,,, then can be ground apace,, for example be made as γ so make target thickness γ attenuation (being that amount of grinding is few) as much as possible if adopt the grinding milk of high grinding rate because grinding rate is fast 1And, from bringing into use abrasive cloth,, just increase the amount of grinding of removing with the grinding milk of height grinding rate in case become stable through after the time of a certain degree, for example be made as γ 2And, in case the further deterioration of abrasive cloth and when making grinding rate begin to descend near service life, then further increase the amount of grinding of removing with height grinding rate slurries that is to say that for example the target thickness that height is ground in the rate slurries is made as γ 3
If the Ginding process of this kind chip, the variation of then can be the neatly corresponding grinding condition in the abrasive areas of identical grinding milk that takes place owing to the deterioration of abrasive cloth.Therefore, can make the change of process time of chip little, the result can improve productive rate.In addition, the initial stage in service life of abrasive cloth, reduce the amount of removing (amount of grinding) in height grinding rate condition as much as possible, can prevent owing to grind the deterioration of the flatness that is caused at a high speed.In addition, in the latter stage in service life of abrasive cloth, compared to the initial stage in service life of abrasive cloth, relation according to " accepting or rejecting (tradeoff) ", can increase grinding rate amount of removing (amount of grinding) of (this moment is still in the height grinding rate condition of phase I) when low, thus, can shorten the milling time of hanging down in the grinding rate condition, and can suppress the milling time that adds up to, make it can be not long.Moreover, also can make the chip of high flatness and high flatness, in addition, can stably obtain this kind chip.
[embodiment]
Below, demonstrate embodiment and comparative example, be described more specifically the present invention, but the present invention is not defined to these embodiment.
(embodiment 1)
Adopt the Ginding process of chip shown in Figure 1, carry out the grinding of chip.
As the chip that will grind, prepare the p-type silicon single crystal wafer of 720 diameter 300mm, these chips are by the crystal bar that utilizes the CZ method to cultivate, and utilize the scroll saw cutting to form.This kind p-type is the chip of the high resistivity of expression p type.To this kind chip, utilize common condition to implement chamfering, polishing, etching.
At this, adopt double-side polishing apparatus shown in Figure 7, with 240 among the above-mentioned silicon single crystal wafer of preparing,, implement twin grinding with a batch mode (15 every batch).Use the MH-S15A of secondary rainbow tower Haars Co., Ltd (NITTAHAASIN CORPORATED) as abrasive cloth.In addition, the grinding milk before the replacing uses FGL11022 number (high speed is ground and used) of Fujimart company (Fujimi Corporation), and the grinding milk after the replacing uses the FGL2100 (low speed grinds and uses) of Fujimart company, grinds in this way.But the thickness of the chip after the grinding is set as whole chips and all keeps constant.
In addition, at this moment, measure the chip thickness the grinding from a plurality of holes, and calculate the grinding rate of chip at any time, and preserve the average speed of each time grinding and add up to the relation of milling time or the value that reference is relatively pass by, in case the thickness of chip becomes predefined thickness, then change grinding milk.
And, the time in service life of abrasive cloth is made as T, and be distinguished into abrasive cloth and use initial stage: T/5, mid-term: 2T/5～4T/5, latter stage: 4T/5～5T/5, to distinguishing, the amount of removing (amount of grinding) ratio with grinding milk before changing and the grinding milk after the replacing from 2.75: 1, changed to 6.5: 1,14: 1, and the service life of corresponding abrasive cloth changed the opportunity of changing this grinding agent, grind in this way.
By this kind method, utilize identical device to carry out the grinding of 240 chips, and utilize AFS (the flatness determinator that ADE Co. (ADE Corporation) makes) to estimate.
(comparative example 1)
In Fig. 5, in grinding, do not carry out the replacing of grinding milk, milling time is made as constant, take place always polishing excessively or grind be not enough to outside, utilize the condition identical with embodiment 1, with among 720 chips being prepared 240 grind, and similarly estimate.
(comparative example 2)
As shown in Figure 6, grind while the thickness of measuring chip, and the target thickness α of the chip after will grinding is made as constant, but in grinding, do not carry out the replacing of grinding milk, in addition, utilize the condition identical with embodiment 1, carry out the grinding of remaining 240 chip, and similarly estimate.
Its result, shown in (a) among Fig. 3, for the Ginding process of the chip of embodiment 1, the deviation of its each sheet chip is little, is judged to be in high-precision mode to grind.With respect to this, shown in (b) among Fig. 3, in the Ginding process of the chip of comparative example 2, because the service life of abrasive cloth, deviation appears in the flatness of observing the chip after the grinding, is judged to be and can't carries out stable grinding.In addition, though diagram is not come out, compared to comparative example 2, the deviation in the Ginding process of the chip of comparative example 1 is bigger.
Shown in (a) among Fig. 4, in the Ginding process of the chip of embodiment 1,, be uniformly in whole, and do not have the periphery limit of collapsing by the surface configuration of the chip after grinding.
With respect to this, shown in (b) among Fig. 4, by the surface configuration of the chip after grinding, deviation profile is arranged in whole according to the Ginding process of the chip of comparative example 2, judge and do not ground equably.
Herein, in table 1, demonstrate when the abrasive cloth with the Ginding process of the chip of comparative example 2 is made as 100 service life, with respect to the abrasive cloth service life of embodiment 1, each comparative example, the ratio of each production capacity.
[table 1]
Figure BPA00001293653200201
As shown in table 1, the Ginding process of the chip of embodiment 1, the situation compared to abrasive cloth mid-term in service life of comparative example 2 no matter which kind of situation is the service life of abrasive cloth, all have high productive capacity, and compared to comparative example 2, productivity approximately increases by 10%.
With respect to this, the Ginding process of comparative example 1,2 all can be subjected to the influence in the service life of abrasive cloth, is judged to be and instability.
(embodiment 2)
Use the double-side polishing apparatus of Fig. 7, utilize batch mode (15 every batch) to carry out the grinding of chip.The desired value of the chip thickness after the grinding of this moment is made as 777 μ m.
As the chip that will grind, prepare the p-type silicon single crystal wafer of 600 diameter 300mm, these chips are by the crystal bar that utilizes the CZ method to cultivate, utilize the scroll saw cutting after, implement chamfering, polishing, etching and form.This kind p-type is the chip of the high resistivity of expression p type.
Measure mechanism as chip thickness, prepare a kind of optical unit, it possesses Wavelength variable type infrared laser device, and this device can be calibrated for 1575～1775nm with Wavelength of Laser.Use this kind chip thickness to measure mechanism, measure the thickness of chip on one side and grind 300 chips among 600 chips, utilize AFS (the flatness determinator of ADE Co.'s manufacturing) to estimate the thickness of the chip after the grinding then.
(comparative example 3)
Use double-side polishing apparatus similarly to Example 2, carry out the grinding of remaining 300 chip.But, in comparative example 3, grind in the mode that does not make chip thickness measure mechanism action.In addition, milling time is made as fixing.
In Fig. 8, expression utilizes the double-side polishing apparatus of embodiment 2 and comparative example 3 to grind the relative frequency (relativefrequency (relative degree)) and the cumlative relative frequencysuy of the chip thickness after the grinding of each 300 chip that forms.
Chip after utilizing the double-side polishing apparatus of embodiment 2 to grind, compared to comparative example 3, the deviation of on average finishing thickness after the grinding is little, judges approximately and reduces 50%.
In addition, as if the double-side polishing apparatus according to embodiment 2, judgement can be reached below the standard deviation 0.1 μ m.
In addition, as shown in Figure 9, the chip after utilizing the double-side polishing apparatus of embodiment 2 to grind, the chip thickness after it grinds is stable, and with respect to this, the deviation of the chip of comparative example 3 is big and unstable.
(embodiment 3)
Prepare double-side polishing apparatus shown in Figure 10.
At first, are holes of on the center with upper millstone is the circumference of fulcrum, offering 15 diameter 20mm as a plurality of holes.And, prepare abrasive cloth (grinding pad MH, thickness 1500 μ m that secondary rainbow tower Haars Co., Ltd makes), it has the Fu Ran of cutting out hole (diameter 40mm), and is bigger than the excircle (diameter 20mm) in the hole of above-mentioned mill; And the window material and the two-sided tape of the same quantity of preparation and above-mentioned hole, as this window material the PTS thin slice that east beautiful (TORAY) company makes is cut into discoideus (diameter 30mm, thickness 150 μ m), and than the bigger 10mm of diameter in the hole of perforate on mill; This two-sided tape (Sumitomo 3M442JS3, thickness 110 μ m) is then pasted along the periphery of PTS thin slice.And, according to two-sided tape, the window material is attached to the part in the hole of upper millstone.
As the chip that will grind, prepare the p-type silicon single crystal wafer of 1000 diameter 300mm, these chips are after being cut out by the crystal bar that utilizes the CZ method to cultivate, execution chamfering, polishing, etching form.This kind p-type is the chip of the high resistivity of expression p type.
In addition, measure mechanism as chip thickness, prepare a kind of optical unit, it possesses Wavelength variable type infrared laser device, and this device can be calibrated for 1575～1775nm with Wavelength of Laser.Use this kind chip thickness to measure mechanism, grind 1000 wafer in a batch mode (15 every batch) while measure the thickness of chip.
Utilize AFS (the flatness determinator that ADE Co. makes), estimate and use this kind double-side polishing apparatus and by the surface configuration of the chip after grinding, its result, for example compared to abrasive cloth and window material are made the integrated existing lapping device that forms, the deviation of present embodiment is little, and can obtain smooth chip.
In addition, the deterioration of window material compared to existing, does not have great change, and exchange frequency does not have great change yet, but the exchange frequency of abrasive cloth compared to existing, reduce and becomes about 1/2.So,, can cut the waste significantly, and can reach the cost that reduces abrasive cloth compared to existing.
In addition, the present invention is not defined to above-mentioned example.Above-mentioned example is an illustration, so long as have be described in claim of the present invention in the identical in fact formation of technological thought, can obtain same action effect, just all be comprised in the technical scope of the present invention.

Claims (16)

1. the Ginding process of a chip, at least, by the lower millstone of rotation driving, upper millstone and the carrier that rotation drives, come the clamping said chip, and push slip, thus, side by side grinding chip is two-sided, and this lower millstone has smooth grinding end face, this upper millstone is configured in the face of above-mentioned lower millstone and has smooth grinding bottom surface, this carrier has in order to keep the chip retaining hole of chip, and the Ginding process of this chip is characterised in that
On one side the thickness of measuring said chip from the pivot that is located at above-mentioned upper millstone or above-mentioned lower millstone and a plurality of holes between the periphery grinds on one side, and in the grinding way of said chip, the different grinding milk of replacing grinding rate.
2. the Ginding process of chip as claimed in claim 1 is characterized in that, an above-mentioned majority hole is located on the above-mentioned upper millstone.
3. the Ginding process of chip as claimed in claim 1 or 2 is characterized in that, grinds said chip in a batch mode.
4. as the Ginding process of each described chip in the claim 1～3, it is characterized in that the Determination of thickness method of said chip is to utilize the light reflection interference method of being carried out by Wavelength variable type infrared laser.
5. as the Ginding process of each described chip in the claim 1～4, it is characterized in that the replacing basis on opportunity of above-mentioned grinding milk is from beginning to grind elapsed time, grinding rate, amount of grinding or abrasive cloth at least a the deciding of counting service life.
6. as the Ginding process of each described chip in the claim 1～5, it is characterized in that, use the Determination of thickness data of said chip, in the grinding of said chip way, change is ground more than at least a among the rotary speed of load, the rotary speed of above-mentioned upper millstone, above-mentioned lower millstone.
7. double-side polishing apparatus possesses at least: the lower millstone that rotation drives, and it has smooth grinding end face; The upper millstone that rotation drives, it is configured in the face of above-mentioned lower millstone and has smooth grinding bottom surface; And carrier, it has in order to keep the chip retaining hole of chip; This double-side polishing apparatus is characterised in that to have:
A plurality of holes, it is arranged between the pivot and periphery of above-mentioned upper millstone or above-mentioned lower millstone;
Chip thickness is measured mechanism, in grinding, in real-time mode, from these a plurality of holes, measures the thickness of said chip;
This chip thickness is measured mechanism and is fixed on the stiff end of this lapping device, and this stiff end is not above-mentioned upper millstone or lower millstone.
8. double-side polishing apparatus as claimed in claim 7 is characterized in that, the abradant surface of lower millstone is provided with abrasive cloth and window material on above-mentioned; This abrasive cloth has the perforate bigger than the diameter in these holes in the position in the above-mentioned a plurality of holes of correspondence; The diameter of this window material is bigger and littler than the hole of abrasive cloth than the hole of above-mentioned mill, and the thickness of this window material is than the thin thickness of abrasive cloth; And above-mentioned window material separates with abrasive cloth, and is fixed on above-mentioned upper millstone or the above-mentioned lower millstone via adhesive linkage.
9. as claim 7 or 8 described double-side polishing apparatus, it is characterized in that said chip thickness measurement mechanism possesses Wavelength variable type infrared laser device, this device sends the laser that sees through the wavelength of chip optically.
10. double-side polishing apparatus as claimed in claim 9 is characterized in that above-mentioned Wavelength of Laser is 1575～1775nm.
11. double-side polishing apparatus as claimed in claim 9 is characterized in that, above-mentioned window material sees through the laser that is emitted by above-mentioned Wavelength variable type infrared laser device.
12., it is characterized in that said chip thickness measurement mechanism measures the integral thickness of said chip as each described double-side polishing apparatus in the claim 7～11.
13., it is characterized in that above-mentioned a plurality of holes are arranged on the periphery of above-mentioned upper millstone in equally spaced mode as each described double-side polishing apparatus in the claim 7～12.
14., it is characterized in that fixedly the stiff end of said chip thickness measurement mechanism is the shell of this double-side polishing apparatus as each described double-side polishing apparatus in the claim 7～13.
15., it is characterized in that above-mentioned window material is plastic as each described double-side polishing apparatus in the claim 8～14.
16. as each described double-side polishing apparatus in the claim 8～15, it is characterized in that, if the thickness of above-mentioned window material is made as t w[μ m], its refractive index is made as n wThe thickness of adhesive linkage is made as t 2[μ m]; The thickness of chip is made as t s[μ m], its refractive index is made as n sThe thickness of abrasive cloth is made as t 1[μ m], its compression ratio is made as ζ 1[%/g/cm 2], and will grind maximum load and be made as P[g/cm 2], then satisfy following relational expression:
t 1* ζ 1* P/100＞t w+ t 2, and t wn w＞t sn sOr t wn w＜t sn s
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US9108289B2 (en) 2015-08-18
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