JP2001287158A - Polishing member, polishing machine, adjusting method, measuring method, semiconductor device manufacturing method, and semiconductor device - Google Patents
Polishing member, polishing machine, adjusting method, measuring method, semiconductor device manufacturing method, and semiconductor deviceInfo
- Publication number
- JP2001287158A JP2001287158A JP2000090428A JP2000090428A JP2001287158A JP 2001287158 A JP2001287158 A JP 2001287158A JP 2000090428 A JP2000090428 A JP 2000090428A JP 2000090428 A JP2000090428 A JP 2000090428A JP 2001287158 A JP2001287158 A JP 2001287158A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polished
- polishing member
- end point
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、研磨部材及び研磨
装置、特にULSIなどの半導体デバイスを製造するプロセ
スにおいて実施される半導体デバイスの平坦化研磨のた
めのCMP装置に用いるのに好適な研磨部材、研磨装
置、調整方法、測定方法、及び半導体デバイス製造方
法、半導体デバイスに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing member and a polishing apparatus, particularly a polishing member suitable for use in a CMP apparatus for flattening and polishing a semiconductor device performed in a process of manufacturing a semiconductor device such as ULSI. The present invention relates to a polishing apparatus, an adjusting method, a measuring method, a semiconductor device manufacturing method, and a semiconductor device.
【0002】[0002]
【従来の技術】半導体集積回路の高集積化、微細化に伴
って半導体製造プロセスの工程が増加し複雑になってき
ている。これに伴い、半導体デバイスの表面は必ずしも
平坦ではなくなってきている。表面に於ける段差の存在
は配線の段切れ、局所的な抵抗の増大などを招き、断線
や電気容量の低下をもたらす。また、絶縁膜では耐電圧
劣化やリークの発生にもつながる。2. Description of the Related Art As the degree of integration and miniaturization of semiconductor integrated circuits increases, the number of steps in a semiconductor manufacturing process increases and becomes more complicated. Along with this, the surface of a semiconductor device is not necessarily flat. The presence of a step on the surface causes disconnection of the wiring, an increase in local resistance, etc., resulting in disconnection and a decrease in electric capacity. In addition, in the case of an insulating film, withstand voltage degradation and leakage may occur.
【0003】一方、半導体集積回路の高集積化、微細化
に伴って光リソグラフィの光源波長は短くなり、開口数
いわゆるNAが大きくなってきていることに伴い、半導体
露光装置の焦点深度が実質的に浅くなってきている。焦
点深度が浅くなることに対応するためには、今まで以上
にデバイス表面の平坦化が要求されている。このような
半導体表面を平坦化する方法としては、化学的機械的研
磨(Chemical Mechanical Polishing又はChemical Mech
anical Planarization 、これよりCMPと呼ぶ)技術が有
望な方法と考えられている。On the other hand, the light source wavelength of optical lithography has been shortened with the increase in the degree of integration and miniaturization of semiconductor integrated circuits, and the numerical aperture, or NA, has been increased. It is getting shallower. In order to cope with the shallow depth of focus, flattening of the device surface is required more than ever. As a method of flattening such a semiconductor surface, a chemical mechanical polishing (Chemical Mechanical Polishing or Chemical Mech
Anical Planarization (hereafter referred to as CMP) technology is considered a promising method.
【0004】CMPは図5に示すような装置を用いて行
われている。図5で1はCMP装置、10は研磨体、3
は研磨対象物保持部(研磨ヘッド)、4は研磨対象物
(ウェハ)、5は研磨剤供給部、6は研磨剤である。研
磨体10は、定盤7の上に研磨パッド2を貼り付けたも
のである。研磨パッド2としては、発泡ポリウレタンよ
りなるシート状のもの、あるいは表面に溝構造を有した
無発泡樹脂よりなるものが使用されている。研磨ヘッド
3は適当な手段により回転運動(100)し、また研磨
体10は適当な手段により回転運動(101)する。こ
の過程でウェハ4は、研磨剤6と研磨パッド2の作用に
より被研磨面が研磨される。[0004] CMP is performed using an apparatus as shown in FIG. In FIG. 5, 1 is a CMP apparatus, 10 is a polishing body, 3
Denotes a polishing object holding unit (polishing head), 4 denotes a polishing object (wafer), 5 denotes an abrasive supply unit, and 6 denotes an abrasive. The polishing body 10 is obtained by attaching a polishing pad 2 on a surface plate 7. As the polishing pad 2, a sheet-like thing made of foamed polyurethane or a thing made of non-foamed resin having a groove structure on its surface is used. The polishing head 3 is rotated (100) by a suitable means, and the polishing body 10 is rotated (101) by a suitable means. In this process, the surface to be polished of the wafer 4 is polished by the action of the polishing agent 6 and the polishing pad 2.
【0005】現在、CMPの研磨の終点は、数十枚のダ
ミーサンプルの研磨を行い、洗浄工程を経た後、エリプ
ソメータ、等による膜厚計測によって算出された研磨速
度を基にして時間管理で決定されている。しかし、時間
管理の方法は、研磨パッドの表面状態の変化、研磨剤の
変化、温度変化などさまざまの不安定要素により、研磨
速度が常に一定で安定している訳ではないため、常に最
適な終点を得る方法として不十分である。更に時間管理
の方法は、研磨速度を求めるために数十枚ものダミーサ
ンプルを用いた研磨作業を必要とすることから、この研
磨作業がコストアップ要因となるため、半導体デバイス
の製造プロセスの安定化や生産コスト低減のためには好
ましくない。At present, the end point of the CMP polishing is determined by time management based on the polishing rate calculated by measuring the film thickness by an ellipsometer or the like after polishing several tens of dummy samples and passing through a cleaning process. Have been. However, the time management method is not always constant and stable due to various unstable factors such as changes in the surface condition of the polishing pad, changes in the polishing agent, and temperature changes. Is insufficient as a method of obtaining Furthermore, the time management method requires a polishing operation using dozens of dummy samples in order to obtain a polishing rate, and this polishing operation causes a cost increase, thereby stabilizing the semiconductor device manufacturing process. It is not preferable for reducing the production cost.
【0006】このため、研磨量や残り膜厚を研磨しなが
ら測定し研磨の終点を決定する、in- situ測定が盛んに
検討されており、その中でも、光を用いた膜厚測定方式
は精度の点で有望な方法として注目されている。For this reason, in-situ measurement, in which the polishing amount and the remaining film thickness are measured while polishing to determine the polishing end point, has been actively studied, and among them, the film thickness measurement method using light is highly accurate. In this regard, it is attracting attention as a promising method.
【0007】研磨量や、ウェハ表面の状態を光学的にin
- situ測定する場合、研磨パッドに設けた測定用の窓を
通して、ウェハの表面を観測する方法が一般的であり、
この技術はUSP5433651に開示されている。The amount of polishing and the state of the wafer surface are optically measured.
-When performing situ measurement, it is common to observe the wafer surface through a measurement window provided in the polishing pad,
This technique is disclosed in US Pat. No. 5,433,651.
【0008】[0008]
【発明が解決しようとする課題】以上の光学的測定のた
めに研磨パッドに測定用の窓を設ける場合、研磨パッド
は一般的に透明でないため、窓とする部分に研磨パッド
とは材質が異なる透明材料を配置する必要がある。この
材料は、研磨パッドの材料とは機械物性が一般的に異な
るため、研磨速度の違い、研磨の不均一、傷を発生させ
る原因となる危険が高い。When the polishing pad is provided with a window for measurement for the above-mentioned optical measurement, the material of the window is generally different from that of the polishing pad because the polishing pad is not transparent. It is necessary to arrange a transparent material. Since this material generally has different mechanical properties from the material of the polishing pad, there is a high risk of causing a difference in polishing rate, uneven polishing, and generation of scratches.
【0009】また、研磨パッドに穿った孔をそのまま測
定窓とした場合、スラリーや洗浄などに用いられる水が
そこから漏れてくるため、測定系に影響を与えないよう
にする煩雑な機構を必要とし、装置が煩雑になる問題が
ある。[0009] In addition, if the hole formed in the polishing pad is used as the measurement window as it is, water used for slurry or cleaning leaks from the window, so that a complicated mechanism for preventing the measurement system from being affected is required. However, there is a problem that the apparatus becomes complicated.
【0010】また、窓と研磨対象物との間の研磨剤の厚
さが一定せずに、研磨膜厚又は研磨終点の測定に於い
て、測定を誤ることがあるという問題がある。In addition, there is a problem in that the thickness of the polishing agent between the window and the object to be polished is not constant, and the measurement of the polishing film thickness or the polishing end point may be erroneously performed.
【0011】また、窓の研磨対象物側の表面及び裏面
で、研磨膜厚又は研磨終点の測定に用いる測定光が反射
し、研磨膜厚又は研磨終点の測定に於いて、測定を誤る
ことがあるという問題がある。In addition, the measurement light used for measuring the polishing film thickness or the polishing end point is reflected on the front and back surfaces of the window on the side of the object to be polished, and the measurement may be erroneously performed in the measurement of the polishing film thickness or the polishing end point. There is a problem that there is.
【0012】本発明は上記問題を解決するためになされ
たもので、研磨に不安定性を与えない、また煩雑な機構
が不要な測定窓を有する研磨部材、研磨装置、調整方
法、及び測定方法を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. The present invention provides a polishing member, a polishing apparatus, an adjusting method, and a measuring method having a measuring window which does not cause instability in polishing and does not require a complicated mechanism. It is intended to provide.
【0013】また、本発明は、研磨工程のコストダウン
を図るとともに研磨状況を精度良く検出することによっ
て工程効率化を図り、それにより従来の半導体デバイス
製造方法に比べて低コストで半導体デバイスを製造する
ことができる半導体デバイス製造方法、及び低コストの
半導体デバイスを提供することを目的とする。Further, the present invention aims at reducing the cost of the polishing process and improving the process efficiency by accurately detecting the polishing state, thereby manufacturing a semiconductor device at a lower cost as compared with the conventional semiconductor device manufacturing method. It is an object of the present invention to provide a method for manufacturing a semiconductor device and a low-cost semiconductor device.
【0014】[0014]
【課題を解決するための手段】上記問題を解決する為
に、本発明は第一に「研磨対象物を保持する研磨ヘッド
と研磨部材とを具え、前記研磨部材と前記研磨対象物と
の間に研磨剤を介在させた状態で、前記研磨部材と前記
研磨対象物を相対移動させることにより、前記研磨対象
物を研磨する研磨装置に用いられる前記研磨部材に於い
て、前記研磨部材が、前記研磨対象物の被研磨面を光学
的に測定する測定光を通すための測定窓部を具えること
を特徴とする研磨部材(請求項1)」を提供する。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention first provides a polishing head and a polishing member for holding an object to be polished, wherein a polishing head is provided between the polishing member and the object to be polished. In a state in which an abrasive is interposed, by relatively moving the polishing member and the object to be polished, in the polishing member used in a polishing apparatus for polishing the object to be polished, the polishing member, the polishing member, A polishing member (Claim 1) is provided, which comprises a measurement window for transmitting measurement light for optically measuring the surface to be polished of the object to be polished.
【0015】第二に「前記測定窓部が、前記研磨部材に
穿たれた孔と前記孔に嵌め込まれた少なくとも測定光に
対して透明な窓板から構成されることを特徴とする請求
項1記載の研磨部材(請求項2)」を提供する。A second feature is that the measurement window portion is constituted by a hole formed in the polishing member and a window plate fitted in the hole and transparent to at least measurement light. The polishing member according to the present invention (Claim 2) is provided.
【0016】第三に「非加重時に於ける前記研磨部材の
最表面(研磨対象物と接触する面)と前記窓板の前記最表
面側の面(以下上面と呼ぶ)との間隔が研磨荷重時に於
ける前記研磨部材の圧縮変形量よりも大きく調整され、
更に研磨荷重時に於ける前記間隔に前記研磨剤が充たさ
れた状態で、測定光に対する透過率が、前記間隔と前記
透明窓とを合わせて10%以上に調整されていることを
特徴とする請求項2記載の研磨部材(請求項3)」を提
供する。Third, the distance between the outermost surface of the polishing member (the surface in contact with the object to be polished) and the uppermost surface of the window plate (hereinafter referred to as the upper surface) when no load is applied is determined by the polishing load. It is adjusted to be larger than the amount of compressive deformation of the polishing member at the time,
Further, in a state in which the polishing agent is filled in the space at the time of the polishing load, the transmittance for the measurement light is adjusted to 10% or more inclusive of the space and the transparent window. A polishing member according to claim 2 (claim 3) "is provided.
【0017】第四に「研磨対象物を保持する研磨ヘッド
と研磨部材とを具え、前記研磨部材と前記研磨対象物と
の間に研磨剤を介在させた状態で、前記研磨部材と前記
研磨対象物を相対移動させることにより、前記研磨対象
物を研磨する研磨装置に用いられる前記研磨部材に於い
て、前記研磨部材が、前記研磨対象物の研磨面を光学的
に測定する光を通すために少なくとも測定光に対して透
明な材料から成ることを特徴とする研磨部材(請求項
4)」を提供する。Fourthly, "a polishing head for holding an object to be polished and a polishing member, and the polishing member and the object to be polished are provided in a state where an abrasive is interposed between the polishing member and the object to be polished. By relatively moving the object, in the polishing member used in the polishing apparatus for polishing the object to be polished, the polishing member, to pass light for optically measuring the polished surface of the object to be polished A polishing member (claim 4), comprising a material transparent to at least the measurement light.
【0018】第五に「前記研磨部材の最表面(研磨対象
物と接触する面)と前記窓板の前記最表面側の面との間
隔Gが、0μm<G≦400μmであることを特徴とする
請求項2記載の研磨部材(請求項5)」を提供する。Fifth, the distance G between the outermost surface of the polishing member (the surface in contact with the object to be polished) and the uppermost surface of the window plate is 0 μm <G ≦ 400 μm. The polishing member according to claim 2 (claim 5) "is provided.
【0019】第六に「前記研磨部材の最表面(研磨対象
物と接触する面)と前記窓板の前記最表面側の面との間
隔Gが、10μm≦G≦200μmであることを特徴とす
る請求項2記載の研磨部材(請求項6)」を提供する。Sixth, a feature is that the distance G between the outermost surface of the polishing member (the surface in contact with the object to be polished) and the uppermost surface of the window plate is 10 μm ≦ G ≦ 200 μm. The polishing member according to claim 2 (claim 6) is provided.
【0020】第七に「前記窓板の透過率は、22%以上
であることを特徴とする請求項2記載の研磨部材(請求
項7)」を提供する。Seventh, there is provided "a polishing member according to claim 2, wherein the transmittance of the window plate is 22% or more."
【0021】第八に「前記窓板は、くさび形であること
を特徴とする請求項2、3、5、6、7何れか1項記載
の研磨部材(請求項8)」を提供する。Eighth, there is provided "a polishing member according to any one of claims 2, 3, 5, 6, and 7, wherein the window plate is wedge-shaped (claim 8)."
【0022】第九に「前記窓板の下部に、くさび形の透
明板がさらに設置されていることを特徴とする請求項8
記載の研磨部材(請求項9)」を提供する。Ninth, "a wedge-shaped transparent plate is further provided below the window plate.
The polishing member according to claim 9 is provided.
【0023】第十に「前記測定窓部の少なくとも1面に
凹凸がランダムに形成されていることを特徴とする請求
項1、2、3、5、6、7何れか1項記載の研磨部材
(請求項10)」を提供する。Tenthly, "a polishing member according to any one of claims 1, 2, 3, 5, 6, and 7, wherein irregularities are randomly formed on at least one surface of the measurement window portion. (Claim 10) "is provided.
【0024】第十一に「前記測定窓部のうちの前記凹凸
が形成されている面の反射率は、2%以下であることを
特徴とする請求項10記載の研磨部材(請求項11)」
を提供する。Eleventh, the polishing member according to claim 10, wherein the reflectance of the surface of the measurement window portion on which the irregularities are formed is 2% or less. "
I will provide a.
【0025】第十二に「前記測定窓部の少なくとも研磨
対象物側の表面が強化のためにハードコーティングされ
ていることを特徴とする請求項1〜11何れか1項記載
の研磨部材(請求項12)」を提供する。A twelfth aspect is that the polishing member according to any one of claims 1 to 11, wherein at least the surface of the measurement window portion on the side of the object to be polished is hard-coated for reinforcement. Item 12) is provided.
【0026】第十三に「前記測定窓部の少なくとも1面
に反射防止膜が形成されていることを特徴とする請求項
1〜12何れか1項記載の研磨部材(請求項13)」を
提供する。Thirteenth, the polishing member according to any one of claims 1 to 12, wherein an anti-reflection film is formed on at least one surface of the measurement window. provide.
【0027】第十四に「請求項1〜13何れか1項記載
の研磨部材と研磨対象物を保持する研磨ヘッドと終点検
出機構とを具え、前記研磨部材と前記研磨対象物との間
に研磨剤を介在させた状態で、前記研磨部材と前記研磨
対象物を相対移動させることにより、前記研磨対象物を
研磨し、且つ前記研磨中に測定光を前記研磨部材を通し
て被研磨面に照射することによって光学的に研磨状態ま
たは研磨膜厚が測定可能とされている研磨装置(請求項
14)」を提供する。A fourteenth aspect of the present invention includes a polishing member according to any one of claims 1 to 13, a polishing head for holding the object to be polished, and an end point detecting mechanism. By relatively moving the polishing member and the object to be polished with an abrasive interposed therebetween, the object to be polished is polished, and measurement light is irradiated onto the surface to be polished through the polishing member during the polishing. Thus, the present invention provides a polishing apparatus (claim 14) in which the polishing state or the polishing film thickness can be optically measured.
【0028】第十五に「前記終点検出機構から出射する
前記測定光は、前記研磨部材を通過し、前記研磨部材と
前記研磨対象物との間の前記研磨剤を通過し、前記研磨
対象物の前記被研磨面で反射し、前記研磨部材と前記研
磨対象物との間の前記研磨剤を再び通過し、前記研磨部
材を再び通過し、前記終点検出機構へ戻り、前記終点検
出機構から出射する前記測定光の強度に対する前記終点
検出機構へ戻る光の強度の比が1%以上であることを特
徴とする請求項14記載の研磨装置(請求項15)」を
提供する。Fifteenth, "the measurement light emitted from the end point detection mechanism passes through the polishing member, passes through the polishing agent between the polishing member and the object to be polished, and Reflected on the surface to be polished, passes again through the abrasive between the polishing member and the object to be polished, passes through the polishing member again, returns to the end point detection mechanism, and exits from the end point detection mechanism. The polishing apparatus according to claim 14, wherein a ratio of the intensity of the light returning to the end point detection mechanism to the intensity of the measurement light to be performed is 1% or more.
【0029】第十六に「前記終点検出機構から出射する
前記測定光は、前記研磨部材を通過し、前記研磨部材と
前記研磨対象物との間の前記研磨剤を通過し、前記研磨
対象物の前記被研磨面で反射し、前記研磨部材と前記研
磨対象物との間の前記研磨剤を再び通過し、前記研磨部
材を再び通過し、前記終点検出機構へ戻り、前記終点検
出機構から出射する前記測定光の強度に対する前記終点
検出機構へ戻る光の強度の比が5%以上であることを特
徴とする請求項14記載の研磨装置(請求項16)」を
提供する。In the sixteenth aspect, the measurement light emitted from the end point detection mechanism passes through the polishing member, passes through the polishing agent between the polishing member and the object to be polished, and Reflected on the surface to be polished, passes again through the abrasive between the polishing member and the object to be polished, passes through the polishing member again, returns to the end point detection mechanism, and exits from the end point detection mechanism. The polishing apparatus according to claim 14, wherein the ratio of the intensity of the light returning to the end point detection mechanism to the intensity of the measurement light to be applied is 5% or more.
【0030】第十七に「請求項10、11何れか1項記
載の研磨部材と研磨対象物を保持する研磨ヘッドと終点
検出機構とを具え、前記研磨部材と前記研磨対象物との
間に研磨剤を介在させた状態で、前記研磨部材と前記研
磨対象物を相対移動させることにより、前記研磨対象物
を研磨し、且つ前記研磨中に測定光を前記研磨部材を通
して被研磨面に照射することによって光学的に研磨状態
または研磨膜厚が測定可能とされている研磨装置におい
て、前記窓板の少なくとも1面に形成されている凹凸
は、前記測定光の波長より大きい段差を有することを特
徴とする研磨装置(請求項17)」を提供する。In a seventeenth aspect, there is provided "a polishing member according to any one of claims 10 and 11, comprising a polishing head for holding a polishing object and an end point detection mechanism, wherein a polishing member is provided between the polishing member and the polishing object. By relatively moving the polishing member and the object to be polished with an abrasive interposed therebetween, the object to be polished is polished, and measurement light is irradiated onto the surface to be polished through the polishing member during the polishing. In a polishing apparatus capable of optically measuring a polished state or a polished film thickness, unevenness formed on at least one surface of the window plate has a step larger than a wavelength of the measurement light. Polishing apparatus (claim 17). "
【0031】第十八に「請求項14〜17何れか1項記
載の研磨装置に於ける前記研磨部材の最表面(研磨対象
物と接触する面)と前記窓板の前記最表面側の面との間
隔の調整方法に於いて、前記終点検出機構で測定した信
号に基づいて、前記研磨部材の最表面と前記窓板の前記
最表面側の面との間隔を調整する段階を有することを特
徴とする調整方法(請求項18)」を提供する。An eighteenth aspect of the present invention provides a polishing apparatus according to any one of claims 14 to 17, wherein the outermost surface of the polishing member (the surface in contact with the object to be polished) and the uppermost surface of the window plate. And adjusting the distance between the outermost surface of the polishing member and the uppermost surface of the window plate based on a signal measured by the end point detection mechanism. A characteristic adjustment method (Claim 18) is provided.
【0032】第十九に「請求項14〜17何れか1項記
載の研磨装置による研磨膜厚又は研磨終点の測定方法に
於いて、前記終点検出機構で測定した信号と予め測定し
記憶されている信号とを比較する段階と、前記終点検出
機構で測定した信号と予め測定し記憶されている信号と
が等しい時に前記終点検出機構で測定した信号を研磨膜
厚又は研磨終点の測定に用いない段階とを有することを
特徴とする測定方法(請求項19)」を提供する。In the nineteenth aspect, in the method for measuring a polishing film thickness or a polishing end point by the polishing apparatus according to any one of claims 14 to 17, a signal measured by the end point detecting mechanism is measured and stored in advance. The signal measured by the end point detection mechanism is not used for the measurement of the polishing film thickness or the polishing end point when the signal measured by the end point detection mechanism and the signal measured in advance and stored are equal. And a measuring method (Claim 19).
【0033】第二十に「請求項14〜17何れか1項記
載の研磨装置を用いて半導体ウエハの表面を平坦化する
工程を有することを特徴とする半導体デバイス製造方法
(請求項20)」を提供する。Twentieth, "a semiconductor device manufacturing method comprising a step of flattening the surface of a semiconductor wafer by using the polishing apparatus according to any one of claims 14 to 17 (claim 20)" I will provide a.
【0034】第二十一に「請求項20に記載の半導体デ
バイス製造方法により製造されることを特徴とする半導
体デバイス(請求項21)」を提供する。A twenty-first aspect of the present invention provides a "semiconductor device manufactured by the semiconductor device manufacturing method according to the twentieth aspect."
【0035】[0035]
【発明の実施の形態】図1、図3、図8は、各々本発明
の実施形態の研磨パッドと研磨装置を説明するための図
であるが、本発明はこの図に限定されるものではない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1, 3 and 8 are views for explaining a polishing pad and a polishing apparatus according to an embodiment of the present invention, respectively, but the present invention is not limited to this figure. Absent.
【0036】図1にて、2は研磨パッド、14は透明窓
板である。透明窓板14は、研磨パッド2に孔が穿たれ
た後にその孔に嵌め込まれている。ここで、透明窓板の
上面と研磨パッドの加工面である最表面との間には間隔
13が取られている。研磨に際して、図3に示すように
ウェハ4を保持した研磨ヘッド3が研磨パッド上に加重
機構(図示されず)により加重され、間隔13は圧縮さ
れる。この際、間隔13は一定で、且つ、基準値以上の
寸法が保たれていることが好ましい。In FIG. 1, 2 is a polishing pad, and 14 is a transparent window plate. The transparent window plate 14 is fitted into the hole after the hole is formed in the polishing pad 2. Here, a space 13 is provided between the upper surface of the transparent window plate and the outermost surface which is the processing surface of the polishing pad. At the time of polishing, the polishing head 3 holding the wafer 4 is weighted on the polishing pad by a weighting mechanism (not shown) as shown in FIG. At this time, it is preferable that the interval 13 is constant and a dimension equal to or larger than the reference value is maintained.
【0037】研磨パッドとしては、発泡ウレタン製の軟
質研磨パッドは余り好ましくない。As the polishing pad, a soft polishing pad made of urethane foam is not preferred.
【0038】その理由は、一般に多用されている発泡ウ
レタン製の軟質研磨パッドは、研磨時の加重による研磨
パッドの圧縮変形量が大きいことから、非加重・非圧縮
時の間隔13を大きくしなければならないのみならず、
加重・研磨時のウェハまたは研磨ヘッドのリテーナリン
グの不規則な振動等の動的な力に対する撓み量が大きい
ため、最大に撓んだときに於いてもウェハの被研磨面ま
たは研磨ヘッドのリテーナリングが窓板の上面に接触し
て傷が付くことを防がなければならないからである。そ
のため、研磨の加重・圧縮時に於ける間隔13を比較的
大きく取る必要があり、この間隔13が作る空間にスラ
リーが入り込み、測定光はこの間隔13を透過しなけれ
ばならないので、測定光の窓板と間隔13の両方に対す
る光透過率が低減する問題がある。The reason for this is that, in the case of a soft polishing pad made of urethane foam, which is commonly used, the amount of compressive deformation of the polishing pad due to the weight applied during polishing is large. Not only must
Since the amount of deflection against dynamic force such as irregular vibration of the retainer ring of the wafer or polishing head during weighting / polishing is large, the retainer of the surface to be polished of the wafer or the polishing head even when flexed to the maximum. This is because it is necessary to prevent the ring from contacting the upper surface of the window plate and being damaged. For this reason, it is necessary to make the gap 13 at the time of polishing load / compression relatively large, and the slurry enters the space created by the gap 13 and the measurement light must pass through the gap 13. There is a problem that the light transmittance for both the plate and the space 13 is reduced.
【0039】以上の観点から、研磨パッドとしては圧縮
変形量の小さな硬質研磨パッドが好ましい。研磨の加重
に対する圧縮変形量が小さいため非加重・非圧縮時の間
隔13を小さく保てるのみならず、研磨の加重時に於い
ても研磨時のウェハまたは研磨ヘッドのリテーナリング
の不規則な振動等の動的な力に対する撓み量が小さいた
め、加重・圧縮時の間隔13を小さくできるからであ
る。加重・圧縮時の間隔13を狭くできれば測定光に対
する透過率が増大し、研磨状態の高精度且つ安定な測定
のために好ましい。研磨パッドの材料としては、エポキ
シ樹脂、アクリル樹脂、ABC樹脂、塩化ビニル樹脂、
ポリカーボネート樹脂、ポリエステル樹脂、フッ素樹脂
の群から選ばれた一つ以上の材料が好ましい。From the above viewpoint, a hard polishing pad having a small amount of compressive deformation is preferable as the polishing pad. Since the amount of compressive deformation with respect to the load of polishing is small, not only can the interval 13 between non-weighted and non-compressed be kept small, but also during the polishing load, irregular vibration of the retainer ring of the wafer or polishing head during polishing, etc. This is because the distance 13 during load / compression can be reduced because the amount of deflection against a dynamic force is small. If the interval 13 at the time of weighting / compression can be reduced, the transmittance for the measurement light increases, which is preferable for high-accuracy and stable measurement of the polished state. As the material of the polishing pad, epoxy resin, acrylic resin, ABC resin, vinyl chloride resin,
One or more materials selected from the group consisting of polycarbonate resin, polyester resin, and fluororesin are preferred.
【0040】窓板材としては石英ガラス、アクリル樹
脂、塩化ビニール樹脂、ポリカーボネート、ポリエステ
ルなどの透明プラスチック等の材料群から選ばれた一つ
以上の材料が好ましく用いられる。As the window plate material, one or more materials selected from a group of materials such as transparent glass such as quartz glass, acrylic resin, vinyl chloride resin, polycarbonate and polyester are preferably used.
【0041】窓板の厚さは研磨パッドの厚さに応じて変
える必要がある。測定光に対する窓板14と間隔13の
光透過率は、加重・圧縮時の間隔13及びスラリー濃度
及び窓板の厚さ・材質に依存する。It is necessary to change the thickness of the window plate according to the thickness of the polishing pad. The light transmittance between the window plate 14 and the gap 13 for the measurement light depends on the gap 13 at the time of weighting / compression, the slurry concentration, and the thickness and material of the window board.
【0042】研磨状態の高精度且つ安定な測定のため
に、窓板14の透過率は、22%以上であることが好ま
しい。For highly accurate and stable measurement of the polished state, the transmittance of the window plate 14 is preferably 22% or more.
【0043】測定光の窓板14と間隔13の両方に対す
る透過率は加重・圧縮時に10%以上であることが好ま
しいが、光源の強度が強い場合または、センサーの感度
が高い場合は10%未満であっても測定は可能である。The transmittance of the measurement light to both the window plate 14 and the interval 13 is preferably 10% or more at the time of weighting / compression, but less than 10% when the light source intensity is high or the sensor sensitivity is high. However, measurement is possible.
【0044】測定光に対する該透過率は、窓板材が透明
材料から選ばれれば、加重・圧縮時に間隔13に入り込
んだスラリーの濃度とスラリー層の厚みに実質的に依存
する。The transmittance for the measurement light substantially depends on the concentration of the slurry entering the space 13 and the thickness of the slurry layer at the time of weighting / compression if the window plate material is selected from a transparent material.
【0045】間隔13の値は、スラリー濃度に依存する
が、一般的なスラリーの濃度にたいしては、0より大き
く400μm以下であることが好ましく、10〜200
μmが一層好ましい。この間隔13の値は、一般に、発
泡ウレタン製の軟質研磨パッドに対して大きく、非発泡
性の硬質研磨パッドに対して小さい。Although the value of the interval 13 depends on the slurry concentration, it is preferably larger than 0 and not more than 400 μm with respect to a general slurry concentration.
μm is more preferred. The value of the interval 13 is generally large for a soft polishing pad made of urethane foam and small for a non-foamed hard polishing pad.
【0046】更に、上記間隔13は研磨時の加重を考慮
してウェハまたは研磨ヘッドのリテーナリングに接触し
ないように決められているにもかかわらず、稀には研磨
時の不規則な振動のため、窓板がウェハまたは研磨ヘッ
ドのリテーナリングに突発的に接触して傷が付くことが
あるため、これを防ぐために窓板の少なくともウェハ側
の表面にハードコーティングすることが好ましい。例え
ば、アクリル樹脂の場合には、シリコン系の有機樹脂で
ハードコーティングする方法が好ましく行われる。Further, although the interval 13 is determined so as not to come into contact with the retainer ring of the wafer or the polishing head in consideration of the load at the time of polishing, it is rarely caused by irregular vibration at the time of polishing. Since the window plate may suddenly come into contact with the wafer or the retainer ring of the polishing head and may be damaged, it is preferable to hard coat at least the surface of the window plate on the wafer side in order to prevent this. For example, in the case of an acrylic resin, a method of hard coating with a silicon-based organic resin is preferably performed.
【0047】以上説明した研磨パッドは、研磨パッドの
材料自体が測定光に対して不透明な場合に好ましく適用
できる。研磨パッドの材料が測定光に対して透明な研磨
パッドに対してはこの測定窓部が不要となることは勿論
である。The polishing pad described above can be preferably applied when the material itself of the polishing pad is opaque to the measurement light. It is a matter of course that this measurement window is not required for a polishing pad whose material is transparent to the measuring light.
【0048】本実施形態の研磨パッドは、図1で示され
た形態のものをそのままの形で図3の研磨装置の定盤7
に固定して用いても良いし、アルミプレートのような定
盤に流し込んだ形で定盤7に固定して用いても良いし、
他の適当な異なる材料の1層以上の材料で裏打ちしたも
のを定盤7に固定して用いても良い。The polishing pad of the present embodiment is the same as that of the polishing pad shown in FIG.
May be fixed to the surface plate 7, or may be used by being fixed to the surface plate 7 in a form poured into a surface plate such as an aluminum plate,
A material lined with one or more layers of other suitable different materials may be fixed to the surface plate 7 and used.
【0049】以上のように図3の研磨装置は、定盤7に
固定された研磨パッドの上記のような好ましい機能によ
り、研磨中に、終点検出装置15、16が研磨状態を好
ましく測定することができる。As described above, in the polishing apparatus shown in FIG. 3, the end point detectors 15 and 16 preferably measure the polishing state during polishing by the preferable functions of the polishing pad fixed to the surface plate 7 as described above. Can be.
【0050】さらに、終点検出機構である終点検出装置
15から出射する測定光17の強度、及び窓板14を通
過し、窓板14と研磨対象物4との間の研磨剤を通過
し、研磨対象物4の被研磨面で反射し、窓板14と研磨
対象物4との間の研磨剤を再び通過し、窓板14を再び
通過し、終点検出装置15へ戻る光の強度の関係は、終
点検出装置15から出射する測定光17の強度に対する
終点検出装置15へ戻る光の強度の比が1%以上である
ことが好ましく、5%以上であることが一層好ましい。
これにより、終点検出装置15へ戻る光の強度が低下し
ないため、終点検出装置15による研磨状態の高精度且
つ安定な測定ができる。Further, the intensity of the measuring light 17 emitted from the end point detecting device 15 which is an end point detecting mechanism, the light passing through the window plate 14, the abrasive between the window plate 14 and the object 4 to be polished, and the polishing The relationship between the intensity of light reflected on the surface to be polished of the object 4, passing again through the abrasive between the window plate 14 and the object 4, passing through the window plate 14 again, and returning to the end point detection device 15 is as follows. The ratio of the intensity of the light returning to the end point detection device 15 to the intensity of the measurement light 17 emitted from the end point detection device 15 is preferably 1% or more, and more preferably 5% or more.
Thereby, since the intensity of the light returning to the end point detecting device 15 does not decrease, highly accurate and stable measurement of the polished state by the end point detecting device 15 can be performed.
【0051】図8(a)、(b)は、図1及び図3に示
した本発明の実施形態の変形例である。図8(a)、
(b)において、図1及び図3と同じ構成要素について
は同じ番号を付している。FIGS. 8A and 8B are modifications of the embodiment of the present invention shown in FIGS. FIG. 8A,
In (b), the same components as those in FIGS. 1 and 3 are denoted by the same reference numerals.
【0052】図8(a)において、窓板30は、くさび
形をしている。窓板30のウェハ側の表面30aは、ウ
ェハ4の研磨面とほぼ平行であり、窓板30の裏面(ウ
ェハと反対側の面)30bは、ウェハ4の研磨面に対し
て傾いている。終点検出装置15は、測定光17がウェ
ハ4の研磨面に対してほぼ垂直に入射するように設置さ
れている。In FIG. 8A, the window plate 30 has a wedge shape. The surface 30a on the wafer side of the window plate 30 is substantially parallel to the polished surface of the wafer 4, and the back surface (surface opposite to the wafer) 30b of the window plate 30 is inclined with respect to the polished surface of the wafer 4. The end point detection device 15 is installed so that the measurement light 17 is incident on the polished surface of the wafer 4 almost perpendicularly.
【0053】図8(a)においては、終点検出装置15
から出射した測定光17のうちの窓板30の裏面30b
で反射する光17aは、終点検出装置15へは戻らない
ため、終点検出装置15による研磨状態の高精度且つ安
定な測定ができる。In FIG. 8A, the end point detecting device 15
30b of the window plate 30 of the measurement light 17 emitted from the
Since the light 17a reflected by the end point detecting device 15 does not return to the end point detecting device 15, highly accurate and stable measurement of the polished state by the end point detecting device 15 can be performed.
【0054】図8(b)は、図8(a)の変形例であ
り、図8(a)の構成にくさび形の透明板31が更に設
置されている。図8(b)においては、測定光17は、
くさび形の透明板31及びくさび形の窓板30を通過す
るため、ウェハの研磨面に入射する光の方向がウェハの
研磨面へほぼ垂直に入射し、且つ終点検出装置15から
出射する検出光17の方向もウェハの研磨面に対してほ
ぼ垂直になる。これにより、終点検出装置15をウェハ
の研磨面に対して、傾けて設置しなくて良いので、終点
検出装置15の設置の手間を省くことができる。FIG. 8B is a modification of FIG. 8A, in which a wedge-shaped transparent plate 31 is further provided in the configuration of FIG. 8A. In FIG. 8B, the measuring light 17 is
Since the light passes through the wedge-shaped transparent plate 31 and the wedge-shaped window plate 30, the direction of light incident on the polished surface of the wafer is substantially perpendicular to the polished surface of the wafer, and the detection light emitted from the end point detection device 15. The direction 17 is also substantially perpendicular to the polished surface of the wafer. This eliminates the need to install the end point detection device 15 at an angle with respect to the polished surface of the wafer, so that the labor for installing the end point detection device 15 can be saved.
【0055】なお、図8(b)において、くさび形の透
明板31は、研磨パッド2と終点検出装置15との間に
設置されているが、くさび形の透明板31は研磨パッド
2の孔に設置しても良いし、終点検出装置15内に設置
しても良い。In FIG. 8B, the wedge-shaped transparent plate 31 is provided between the polishing pad 2 and the end point detecting device 15, but the wedge-shaped transparent plate 31 is provided with a hole in the polishing pad 2. Or may be installed in the end point detecting device 15.
【0056】また、本発明の実施形態の研磨パッドの窓
板の裏面及び/もしくはウェハ側の表面で測定光が反射
して測定光の光量が低下したり、終点検出装置15へ戻
ったりして、研磨膜厚又は研磨終点の測定に於いて、測
定を誤ることがある。これを防ぐために窓板のウェハ側
の表面及び/もしくは裏面に反射防止膜を形成すること
が好ましい。反射防止膜としては、例えば、MgF2等の単
層反射防止膜、もしくはMgF2、CeF3、Al2O3、SiO2、Sb2
O3等のうちの2以上の膜を積層した多層反射防止膜等が
用いられる。Further, the measuring light is reflected on the back surface of the window plate of the polishing pad and / or on the surface on the wafer side of the polishing pad according to the embodiment of the present invention, so that the quantity of the measuring light is reduced or returned to the end point detecting device 15. In the measurement of the polishing film thickness or the polishing end point, the measurement may be erroneously performed. In order to prevent this, it is preferable to form an antireflection film on the front and / or back surface of the window plate on the wafer side. The antireflection film, for example, a single-layer antireflection film MgF 2 or the like, or MgF 2, CeF 3, Al 2 O 3, SiO 2, Sb 2
A multilayer antireflection film or the like in which two or more films of O 3 and the like are stacked is used.
【0057】また、本発明の実施形態の研磨パッドの窓
板の裏面及び/もしくはウェハ側の表面で測定光が反射
して終点検出装置15へ戻り、研磨膜厚又は研磨終点の
測定に於いて、測定を誤ることがある。これを防ぐため
に窓板のウェハ側の表面及び/もしくは裏面に凹凸をラ
ンダムに形成することが好ましい。これにより、凹凸が
形成されている面での測定光の反射が低減する。このよ
うな凹凸を形成する方法としては、窓板が樹脂の場合
は、サンドブラストで凹凸を形成する方法、砥石もしく
はサンドペーパーで凹凸を形成する方法、樹脂の硬化時
に凹凸が形成されているスタンパを含む金型を用いる方
法等があり、窓板がガラスの場合は、サンドブラストで
凹凸を形成する方法、砥石もしくはサンドペーパーで凹
凸を形成する方法、化学的なエッチングにより凹凸を形
成する方法等がある。In the embodiment of the present invention, the measuring light is reflected on the back surface of the window plate of the polishing pad and / or the surface on the wafer side and returns to the end point detecting device 15 to measure the polishing film thickness or the polishing end point. , Measurement may be wrong. In order to prevent this, it is preferable to form irregularities randomly on the wafer side surface and / or back surface of the window plate. Thereby, the reflection of the measurement light on the surface having the unevenness is reduced. As a method of forming such irregularities, when the window plate is a resin, a method of forming irregularities by sandblasting, a method of forming irregularities by a grindstone or sandpaper, a stamper having irregularities formed when the resin is cured. In the case where the window plate is made of glass, there is a method of forming irregularities by sandblasting, a method of forming irregularities with a grindstone or sandpaper, a method of forming irregularities by chemical etching, and the like. .
【0058】そして、終点検出装置15への戻り光を低
減させるため、凹凸の段差は、測定光の波長より大きい
段差であることが好ましい。また、終点検出装置15へ
の戻り光を低減させるため、凹凸が形成されている窓板
の面での反射率は、2%以下であることが好ましい。In order to reduce the return light to the end point detecting device 15, it is preferable that the step of the unevenness is larger than the wavelength of the measurement light. Further, in order to reduce the return light to the end point detection device 15, the reflectance on the surface of the window plate having the unevenness is preferably 2% or less.
【0059】次に本発明の実施形態の調整方法について
説明する。本発明の実施形態の調整方法は、前記研磨装
置に於ける研磨部材2の最表面(研磨対象物と接触する
面)と窓板14の研磨部材2の最表面側の面との間隔の
調整方法に関するものである。終点検出装置15として
は反射分光特性(反射分光スペクトル)から研磨膜厚又
は研磨終点を測定する装置を用いる。終点検出装置15
で測定された反射分光スペクトルは、終点検出器の信号
処理装置16に於いてシミュレーション等で得られた参
照スペクトルと比較され、研磨膜厚又は研磨終点が測定
される。Next, an adjusting method according to the embodiment of the present invention will be described. The adjusting method according to the embodiment of the present invention includes adjusting the distance between the outermost surface of the polishing member 2 (the surface in contact with the object to be polished) and the surface of the window plate 14 on the outermost surface side of the polishing member 2 in the polishing apparatus. It is about the method. As the end point detecting device 15, an apparatus for measuring a polishing film thickness or a polishing end point from a reflection spectral characteristic (reflection spectral spectrum) is used. End point detection device 15
Is compared with a reference spectrum obtained by a simulation or the like in the signal processing device 16 of the end point detector, and the polishing film thickness or the polishing end point is measured.
【0060】窓板14の研磨部材2の最表面側の面と研
磨部材の最表面との間隔が広すぎる場合、前記間隔に存
在する研磨剤による光の損失が多すぎるため、終点検出
装置15に於いて微弱な信号しか得られないので、研磨
膜厚又は研磨終点を良好に測定することができない。一
方、前記間隔が狭すぎる場合、その間隔に存在する研磨
剤の層の干渉による信号が終点検出装置15の信号に加
わるため、研磨膜厚又は研磨終点を良好に測定すること
ができない。If the distance between the outermost surface of the polishing member 2 of the window plate 14 and the outermost surface of the polishing member is too wide, the loss of light due to the abrasive existing in the space is too large, so that the end point detecting device 15 However, since only a weak signal can be obtained in the above method, the thickness of the polished film or the polishing end point cannot be measured well. On the other hand, if the gap is too narrow, a signal due to interference of the abrasive layer existing in the gap is added to the signal of the end point detection device 15, so that the polishing film thickness or the polishing end point cannot be measured well.
【0061】このため、本発明の実施形態の調整方法
は、終点検出装置15で測定した信号を見ながら、研磨
膜厚又は研磨終点を良好に測定することができる信号が
終点検出装置15で測定できるように、研磨部材2の最
表面(研磨対象物と接触する面)と窓板14の最表面側
の面との間隔を調整する、つまり終点検出装置15で測
定した信号に基づいて、研磨部材2の最表面と窓板14
の最表面側の面との間隔を調整する段階を有する。For this reason, in the adjusting method according to the embodiment of the present invention, while the signal measured by the end point detecting device 15 is observed, a signal capable of favorably measuring the polishing film thickness or the polishing end point is measured by the end point detecting device 15. The distance between the outermost surface of the polishing member 2 (the surface in contact with the object to be polished) and the uppermost surface of the window plate 14 is adjusted, that is, polishing is performed based on a signal measured by the end point detection device 15. Outermost surface of member 2 and window plate 14
Adjusting the distance from the outermost surface.
【0062】次に本発明の実施形態の測定方法について
説明する。本発明の実施形態の測定方法は、前記研磨装
置に於ける研磨膜厚又は研磨終点の測定方法に関するも
のである。終点検出装置15としては反射分光特性(反
射分光スペクトル)から研磨膜厚又は研磨終点を測定す
る装置を用いる。Next, the measuring method according to the embodiment of the present invention will be described. The measuring method according to the embodiment of the present invention relates to a method for measuring a polishing film thickness or a polishing end point in the polishing apparatus. As the end point detecting device 15, an apparatus for measuring a polishing film thickness or a polishing end point from a reflection spectral characteristic (reflection spectral spectrum) is used.
【0063】研磨中に窓と研磨対象物との間の研磨剤の
厚さが一定せずに、研磨膜厚又は研磨終点の測定に於い
て不適当な信号が得られることがある。不適当な信号と
は、例えば、本発明の実施形態の調整方法に於いて説明
した、研磨剤による損失が多すぎる場合の微弱な信号、
及び窓板14の研磨部材2の最表面側の面と研磨部材の
最表面との間隔に存在する研磨剤の層の干渉による信号
が加わった信号である。During polishing, the thickness of the polishing agent between the window and the object to be polished is not constant, and an inappropriate signal may be obtained in measuring the polishing film thickness or the polishing end point. The inappropriate signal is, for example, a weak signal when the loss due to the abrasive is too large, as described in the adjustment method of the embodiment of the present invention,
And a signal to which a signal due to interference of a layer of abrasive existing at a distance between the outermost surface of the polishing member 2 of the window plate 14 and the outermost surface of the polishing member is added.
【0064】このため、本発明の実施形態の測定方法
は、本発明の実施形態の調整方法の調整時等に得られた
不適当な信号等を予め測定した信号として記憶装置(不
図示)に記憶させておき、研磨中に、終点検出装置15
で測定した信号と記憶装置に記憶されている前記信号と
を比較する段階を有する。さらに、本発明の実施形態の
測定方法は、終点検出装置15で測定した信号と記憶装
置に記憶されている前記信号とが等しい時に、終点検出
装置15で測定した信号を研磨膜厚又は研磨終点検出に
用いない段階を有する。これにより、窓と研磨対象物と
の間の研磨剤の厚さが一定せず不安定になるような場合
でも、研磨膜厚又は研磨終点の測定に於いて、測定を誤
ることがなくなる。Therefore, according to the measuring method of the embodiment of the present invention, an inappropriate signal or the like obtained at the time of adjustment of the adjusting method of the embodiment of the present invention is stored in a storage device (not shown) as a previously measured signal. The end point detection device 15 is stored during polishing.
Comparing the signal measured in step (b) with the signal stored in the storage device. Further, the measuring method according to the embodiment of the present invention, when the signal measured by the end point detection device 15 and the signal stored in the storage device are equal, the signal measured by the end point detection device 15 is a polishing film thickness or polishing end point There is a step not used for detection. Thus, even when the thickness of the polishing agent between the window and the object to be polished is not constant and becomes unstable, the measurement of the polishing film thickness or the polishing end point does not result in an erroneous measurement.
【0065】図7は半導体デバイス製造プロセスを示す
フローチャートである。半導体デバイス製造プロセスを
スタートして、まずステップS200で、次に挙げるステッ
プS201〜S204の中から適切な処理工程を選択する。選択
に従って、ステップS201〜S204のいずれかに進む。FIG. 7 is a flowchart showing a semiconductor device manufacturing process. When the semiconductor device manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204. According to the selection, the process proceeds to any of steps S201 to S204.
【0066】ステップS201はシリコンウエハの表面を酸
化させる酸化工程である。ステップS202はCVD等により
シリコンウエハ表面に絶縁膜を形成するCVD工程であ
る。ステップS203はシリコンウエハ上に電極を蒸着等の
工程で形成する電極形成工程である。ステップS204はシ
リコンウエハにイオンを打ち込むイオン打ち込み工程で
ある。Step S201 is an oxidation step of oxidizing the surface of the silicon wafer. Step S202 is a CVD step of forming an insulating film on the surface of the silicon wafer by CVD or the like. Step S203 is an electrode forming step of forming electrodes on the silicon wafer by steps such as vapor deposition. Step S204 is an ion implantation step of implanting ions into the silicon wafer.
【0067】CVD工程もしくは電極形成工程の後で、ス
テップS205に進む。ステップS205はCMP工程である。CMP
工程では本発明に係る研磨装置により、層間絶縁膜の平
坦化や、半導体デバイスの表面の金属膜の研磨によるダ
マシン(damascene)の形成等が行われる。After the CVD step or the electrode forming step, the process proceeds to step S205. Step S205 is a CMP process. CMP
In the process, the polishing apparatus according to the present invention performs planarization of an interlayer insulating film, formation of a damascene by polishing a metal film on the surface of a semiconductor device, and the like.
【0068】CMP工程もしくは酸化工程の後でステップS
206に進む。ステップS206はフォトリソ工程である。フ
ォトリソ工程では、シリコンウエハへのレジストの塗
布、露光装置を用いた露光によるシリコンウエハへの回
路パターンの焼き付け、露光したシリコンウエハの現像
が行われる。さらに次のステップS207は現像したレジス
ト像以外の部分をエッチングにより削り、その後レジス
ト剥離が行われ、エッチングが済んで不要となったレジ
ストを取り除くエッチング工程である。Step S after the CMP step or the oxidation step
Continue to 206. Step S206 is a photolithography process. In the photolithography process, a resist is applied to a silicon wafer, a circuit pattern is printed on the silicon wafer by exposure using an exposure apparatus, and the exposed silicon wafer is developed. Further, the next step S207 is an etching step in which portions other than the developed resist image are etched away, and then the resist is peeled off to remove unnecessary resist after etching.
【0069】次にステップS208で必要な全工程が完了し
たかを判断し、完了していなければステップS200に戻
り、先のステップを繰り返して、シリコンウエハ上に回
路パターンが形成される。ステップS208で全工程が完了
したと判断されればエンドとなる。Next, it is determined in step S208 whether all necessary steps have been completed. If not, the process returns to step S200, and the previous steps are repeated to form a circuit pattern on the silicon wafer. If it is determined in step S208 that all steps have been completed, the process ends.
【0070】本発明に係る半導体デバイス製造方法で
は、CMP工程に於いて本発明に係る研磨装置を用いてい
るため、CMP工程での研磨終点の測定精度又は膜厚の測
定精度が向上することにより、CMP工程での歩留まりが
向上する。これにより、従来の半導体デバイス製造方法
に比べて低コストで半導体デバイスを製造することがで
きるという効果がある。In the method of manufacturing a semiconductor device according to the present invention, since the polishing apparatus according to the present invention is used in the CMP process, the measurement accuracy of the polishing end point or the measurement accuracy of the film thickness in the CMP process is improved. And the yield in the CMP process is improved. As a result, there is an effect that a semiconductor device can be manufactured at a lower cost than a conventional semiconductor device manufacturing method.
【0071】なお、上記の半導体デバイス製造プロセス
以外の半導体デバイス製造プロセスのCMP工程に本発明
に係る研磨装置を用いても良い。The polishing apparatus according to the present invention may be used in a CMP step of a semiconductor device manufacturing process other than the above-described semiconductor device manufacturing process.
【0072】本発明に係る半導体デバイスは、本発明に
係る半導体デバイス製造方法により製造される。これに
より、従来の半導体デバイス製造方法に比べて低コスト
で半導体デバイスを製造することができ、半導体デバイ
スの製造原価を低下させることができるという効果があ
る。The semiconductor device according to the present invention is manufactured by the semiconductor device manufacturing method according to the present invention. Thus, there is an effect that the semiconductor device can be manufactured at a lower cost than the conventional semiconductor device manufacturing method, and the manufacturing cost of the semiconductor device can be reduced.
【0073】[0073]
【実施例】[実施例1]図2は実施例1の研磨パッドを
示す断面図である。[Embodiment 1] FIG. 2 is a sectional view showing a polishing pad according to Embodiment 1.
【0074】エポキシ主剤エピコート828、エピコー
ト871(共に油化シェルエポキシ社製)と硬化剤ジアミ
ノジフェニルメタンを重量比2.6:3.9:1で混
合、攪拌し、観測用窓部としての孔部分の型を有するφ
800mmのアルミプレート上にこれを流し込み、150℃で
8時間硬化させて成型した。The epoxy base material Epicoat 828 and Epicoat 871 (both manufactured by Yuka Shell Epoxy Co., Ltd.) and the curing agent diaminodiphenylmethane were mixed at a weight ratio of 2.6: 3.9: 1 and stirred to form a hole as an observation window. Φ of the type
Pour this on an 800mm aluminum plate and at 150 ° C
Cured for 8 hours and molded.
【0075】次いで、切削加工で、上記エポキシ樹脂表
面にピッチ0.5mm、深さ0.3mmの螺旋状V溝(V角度60°)
と、ピッチ15mm、幅2mm、深さ0.5mm格子状角溝を形成し
た。この研磨パッドのV溝(V角度60°)の断面を図6に
示す。Next, a spiral V-groove (V angle 60 °) having a pitch of 0.5 mm and a depth of 0.3 mm was formed on the surface of the epoxy resin by cutting.
Then, a grid-shaped square groove having a pitch of 15 mm, a width of 2 mm, and a depth of 0.5 mm was formed. FIG. 6 shows a cross section of a V groove (V angle 60 °) of this polishing pad.
【0076】この研磨パッドの樹脂部の厚みは2mmで
あり、圧縮変形量は10kgf/cm2(9.8×105Pa)
の荷重に対して2μmであった。The thickness of the resin part of this polishing pad was 2 mm, and the amount of compressive deformation was 10 kgf / cm 2 (9.8 × 10 5 Pa).
Was 2 μm with respect to the load.
【0077】窓板14材としてアクリル材を選び、公知
のエポキシシランの部分共加水分解物にコロイダルシリ
カを分散させたハードコーティング液を塗布し、加熱硬
化して厚さ約1μmのハードコートを形成した。図2に
示すようこの窓板14のハードコート側を研磨パッドの
最上層側に向け、間隔13が加重・圧縮時に100μm
になるように、成型された研磨パッドの孔部にはめ込み
固定した。スラリー(Cabot社SS25を2倍希釈)が間隔13
に充たされた時の測定光に対する窓板14と間隔13の
両方に対する透過率は89%であった。[実施例2]図3
は本実施例の研磨装置である。図3で10は研磨体、3
は研磨ヘッド、4はウェハ、5は研磨剤供給部、6は研
磨剤である。研磨体10は、定盤7の上に研磨パッド2
を貼り付けたものであり、研磨パッド2としては、実施
例1で示したものを用いる。定盤7の窓板14に対応す
る位置には、測定光が通過するための貫通孔が穿ってあ
る。15は膜厚測定器、16は信号処理装置である。An acrylic material was selected as a material for the window plate 14, a hard coating solution in which colloidal silica was dispersed in a known co-hydrolyzed product of epoxysilane was applied, and then cured by heating to form a hard coat having a thickness of about 1 μm. did. As shown in FIG. 2, the hard coat side of the window plate 14 is directed to the uppermost layer side of the polishing pad, and the interval 13 is 100 μm at the time of load and compression.
And fixed in the hole of the formed polishing pad. Slurry (Cabot SS25 diluted 2 times) at intervals of 13
The transmittance of both the window plate 14 and the interval 13 to the measurement light when the sample was filled was 89%. [Embodiment 2] FIG.
Is a polishing apparatus of the present embodiment. In FIG. 3, 10 is a polishing body, 3
Is a polishing head, 4 is a wafer, 5 is an abrasive supply section, and 6 is an abrasive. The polishing body 10 has a polishing pad 2 on a surface plate 7.
And the polishing pad 2 used in the first embodiment is used. At a position corresponding to the window plate 14 of the surface plate 7, a through hole for passing the measurement light is formed. Reference numeral 15 denotes a film thickness measuring device, and 16 denotes a signal processing device.
【0078】本研磨装置は以下のように動作する。ウェ
ハ4を保持した研磨ヘッド3は加重機構(図示されず)
により研磨パッド2に加圧され、適当な手段により回転
運動(図示されず)と揺動運動(図示されず)をし、ま
た研磨体10は適当な手段により回転運動(図示され
ず)する。この過程でウェハ4は、研磨剤6と研磨パッ
ド2の作用により被研磨面が研磨される。研磨中、定盤
7の下に設けられた膜厚測定器から測定光17が定盤7
の孔、研磨パッドの窓板を通ってウェハの被研磨面に照
射され、その反射信号光は、再び同じ光路を通って膜厚
測定器15の光検出器にて受光され、その出力信号が信
号処理装置16で処理され、研磨状態が測定される。The polishing apparatus operates as follows. The polishing head 3 holding the wafer 4 is a weighting mechanism (not shown)
The polishing pad 2 is pressurized to perform a rotating motion (not shown) and a swinging motion (not shown) by appropriate means, and the polishing body 10 is rotated (not shown) by appropriate means. In this process, the surface to be polished of the wafer 4 is polished by the action of the polishing agent 6 and the polishing pad 2. During polishing, a measuring light 17 is emitted from a film thickness measuring device provided below the platen 7.
Then, the polished surface of the wafer is irradiated through the hole of the polishing pad and the window plate of the polishing pad, and the reflected signal light is again received by the photodetector of the film thickness measuring device 15 through the same optical path. It is processed by the signal processing device 16 and the polishing state is measured.
【0079】以上の研磨装置の研磨ヘッドに熱酸化膜が
1μm形成された6インチシリコンウェハを保持して、以
下の条件で研磨を行った。A thermal oxide film is formed on the polishing head of the above polishing apparatus.
A 6-inch silicon wafer having a thickness of 1 μm was held and polished under the following conditions.
【0080】研磨ヘッド回転数:50rpm 定盤回転数:20rpm 荷重:460g/cm2(4.5×104Pa) 揺動幅:30mm 揺動速度:15ストローク/分 研磨時間:3分 使用スラリーSS25を2倍に希釈 スラリー流量:200ml/分 研磨中に図4に示すように観測用の窓板を通して残り膜
厚を光学的にその場測定することにより100nm/分の研
磨速度が観察され、繰り返し測定の結果、測定の安定性
が確認された。Polishing head rotation speed: 50 rpm Surface plate rotation speed: 20 rpm Load: 460 g / cm 2 (4.5 × 10 4 Pa) Swing width: 30 mm Swing speed: 15 strokes / min Polishing time: 3 minutes Slurry used SS25 is diluted twice. Slurry flow rate: 200 ml / min. During polishing, the remaining film thickness is optically measured in-situ through an observation window plate as shown in FIG. As a result of repeated measurement, the stability of the measurement was confirmed.
【0081】また、測定窓による研磨の不均一や傷の発
生の悪影響はなかった。In addition, there was no adverse effect of uneven polishing and generation of scratches by the measurement window.
【0082】[0082]
【発明の効果】以上説明した通り、本発明によれば、研
磨の不均一や傷を生ずることなく、研磨量や、研磨対象
物の表面の状態を光学的にin-situで安定的に且つ高精
度で測定できる簡便な研磨部材及び研磨装置を提供でき
る。As described above, according to the present invention, the amount of polishing and the state of the surface of the object to be polished can be stably and optically in-situ without causing non-uniform polishing and scratches. It is possible to provide a simple polishing member and a polishing apparatus that can measure with high accuracy.
【図1】本発明の実施形態の測定窓部を具えた研磨パッ
ドの概略断面図である。FIG. 1 is a schematic cross-sectional view of a polishing pad having a measurement window according to an embodiment of the present invention.
【図2】本実施例1の測定窓部を具えた研磨パッドの概
略断面図である。FIG. 2 is a schematic cross-sectional view of a polishing pad having a measurement window according to the first embodiment.
【図3】本実施例1の研磨パッドと、終点検出装置(膜
厚測定器と信号処理装置)を具えた研磨装置の概念図で
ある。FIG. 3 is a conceptual diagram of a polishing apparatus including a polishing pad according to the first embodiment and an end point detection device (a film thickness measuring device and a signal processing device).
【図4】本発明で得られた研磨による残り膜厚変化のそ
の場測定(in-situ)によるデータ例である。FIG. 4 is an example of data obtained by in-situ measurement of a change in remaining film thickness due to polishing obtained in the present invention.
【図5】従来のCMP装置の概念図である。FIG. 5 is a conceptual diagram of a conventional CMP apparatus.
【図6】本実施例1の研磨パッドの溝形状の断面図であ
る。FIG. 6 is a sectional view of a groove shape of the polishing pad of the first embodiment.
【図7】半導体デバイス製造プロセスを示すフローチャ
ートである。FIG. 7 is a flowchart showing a semiconductor device manufacturing process.
【図8】本発明の実施形態の測定窓部を具えた研磨パッ
ドの概略断面図である。FIG. 8 is a schematic cross-sectional view of a polishing pad provided with a measurement window according to an embodiment of the present invention.
1 CMP装置 2 研磨部材(研磨パッド) 3 研磨対象物保持部(研磨ヘッド) 4 研磨対象物(ウェハ) 5 研磨剤供給部 6 研磨剤(スラリー) 7 定盤 10 研磨体 11 定盤(アルミプレート) 12 研磨パッド 13 研磨パッドの最表面と窓板上面との間隔 14 透明窓板 15 膜厚測定器・・終点検出装置 16 信号処理装置・・終点検出装置 17 測定光 25 研磨パッドの最表面 26 研磨パッドの溝 30 くさび形の窓材 31 くさび形の透明板 DESCRIPTION OF SYMBOLS 1 CMP apparatus 2 Polishing member (polishing pad) 3 Polishing object holding part (polishing head) 4 Polishing target (wafer) 5 Polishing agent supply part 6 Polishing agent (slurry) 7 Surface plate 10 Polishing body 11 Surface plate (aluminum plate) 12) Polishing pad 13 Spacing between the outermost surface of the polishing pad and the upper surface of the window plate 14 Transparent window plate 15 Film thickness measuring device ... End point detecting device 16 Signal processing device ... End point detecting device 17 Measurement light 25 Outermost surface of polishing pad 26 Groove of polishing pad 30 Wedge-shaped window material 31 Wedge-shaped transparent plate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮地 章 東京都千代田区丸の内3丁目2番3号 株 式会社ニコン内 Fターム(参考) 2F065 AA30 BB03 BB16 CC19 HH13 JJ01 JJ09 LL00 LL49 PP13 3C058 AA09 AA12 AC02 AC04 BA01 BA07 BA09 CB10 DA12 DA17 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Akira Miyaji 3-2-3 Marunouchi, Chiyoda-ku, Tokyo F-term in Nikon Corporation (reference) 2F065 AA30 BB03 BB16 CC19 HH13 JJ01 JJ09 LL00 LL49 PP13 3C058 AA09 AA12 AC02 AC04 BA01 BA07 BA09 CB10 DA12 DA17
Claims (21)
材とを具え、前記研磨部材と前記研磨対象物との間に研
磨剤を介在させた状態で、前記研磨部材と前記研磨対象
物を相対移動させることにより、前記研磨対象物を研磨
する研磨装置に用いられる前記研磨部材に於いて、前記
研磨部材が、前記研磨対象物の被研磨面を光学的に測定
する測定光を通すための測定窓部を具えることを特徴と
する研磨部材。A polishing head for holding an object to be polished; and a polishing member, wherein the polishing member and the object to be polished are interposed in a state where an abrasive is interposed between the polishing member and the object to be polished. By relative movement, in the polishing member used in the polishing apparatus for polishing the polishing object, the polishing member, for passing measurement light for optically measuring the surface to be polished of the polishing object. A polishing member comprising a measurement window.
孔と前記孔に嵌め込まれた少なくとも測定光に対して透
明な窓板から構成されることを特徴とする請求項1記載
の研磨部材。2. The apparatus according to claim 1, wherein said measurement window comprises a hole formed in said polishing member and a window plate which is fitted in said hole and is at least transparent to measurement light. Polishing member.
(研磨対象物と接触する面)と前記窓板の前記最表面側の
面(以下上面と呼ぶ)との間隔が研磨荷重時に於ける前
記研磨部材の圧縮変形量よりも大きく調整され、更に研
磨荷重時に於ける前記間隔に前記研磨剤が充たされた状
態で、測定光に対する透過率が、前記間隔と前記透明窓
とを合わせて10%以上に調整されていることを特徴と
する請求項2記載の研磨部材。3. The outermost surface of the polishing member when no load is applied.
The distance between the surface (the surface in contact with the object to be polished) and the surface on the outermost surface side (hereinafter referred to as the upper surface) of the window plate is adjusted to be larger than the amount of compressive deformation of the polishing member at the time of a polishing load. The transmittance of the measurement light is adjusted to 10% or more in total with the gap and the transparent window in a state where the polishing agent is filled in the gap at the time of load. 3. The polishing member according to 2.
材とを具え、前記研磨部材と前記研磨対象物との間に研
磨剤を介在させた状態で、前記研磨部材と前記研磨対象
物を相対移動させることにより、前記研磨対象物を研磨
する研磨装置に用いられる前記研磨部材に於いて、前記
研磨部材が、前記研磨対象物の研磨面を光学的に測定す
る光を通すために少なくとも測定光に対して透明な材料
から成ることを特徴とする研磨部材。4. A polishing head for holding an object to be polished and a polishing member, and the polishing member and the object to be polished are interposed in a state where an abrasive is interposed between the polishing member and the object to be polished. By relative movement, in the polishing member used in the polishing apparatus for polishing the polishing object, the polishing member, at least a measurement for transmitting light for optically measuring the polishing surface of the polishing object A polishing member comprising a material transparent to light.
する面)と前記窓板の前記最表面側の面との間隔Gが、
0μm<G≦400μmであることを特徴とする請求項2
記載の研磨部材。5. A distance G between an outermost surface of the polishing member (a surface in contact with an object to be polished) and a surface of the window plate on the uppermost surface side is defined as:
3. The structure of claim 2, wherein 0 .mu.m <G.ltoreq.400 .mu.m.
The polishing member according to the above.
する面)と前記窓板の前記最表面側の面との間隔Gが、
10μm≦G≦200μmであることを特徴とする請求項
2記載の研磨部材。6. A distance G between an outermost surface of the polishing member (a surface in contact with an object to be polished) and a surface of the window plate on the outermost surface side is defined as:
3. The polishing member according to claim 2, wherein 10 μm ≦ G ≦ 200 μm.
とを特徴とする請求項2記載の研磨部材。7. The polishing member according to claim 2, wherein said window plate has a transmittance of 22% or more.
する請求項2、3、5、6、7何れか1項記載の研磨部
材。8. The polishing member according to claim 2, wherein said window plate has a wedge shape.
らに設置されていることを特徴とする請求項8記載の研
磨部材。9. The polishing member according to claim 8, wherein a wedge-shaped transparent plate is further provided below the window plate.
ランダムに形成されていることを特徴とする請求項1、
2、3、5、6、7何れか1項記載の研磨部材。10. The method according to claim 1, wherein irregularities are randomly formed on at least one surface of said measurement window.
The polishing member according to any one of 2, 3, 5, 6, and 7.
れている面の反射率は、2%以下であることを特徴とす
る請求項10記載の研磨部材。11. The polishing member according to claim 10, wherein the reflectance of the surface of the measurement window portion on which the irregularities are formed is 2% or less.
の表面が強化のためにハードコーティングされているこ
とを特徴とする請求項1〜11何れか1項記載の研磨部
材。12. The polishing member according to claim 1, wherein at least a surface of the measurement window on the side of the object to be polished is hard-coated for reinforcement.
止膜が形成されていることを特徴とする請求項1〜12
何れか1項記載の研磨部材。13. An antireflection film is formed on at least one surface of the measurement window.
The polishing member according to claim 1.
材と研磨対象物を保持する研磨ヘッドと終点検出機構と
を具え、前記研磨部材と前記研磨対象物との間に研磨剤
を介在させた状態で、前記研磨部材と前記研磨対象物を
相対移動させることにより、前記研磨対象物を研磨し、
且つ前記研磨中に測定光を前記研磨部材を通して被研磨
面に照射することによって光学的に研磨状態または研磨
膜厚が測定可能とされている研磨装置。14. A polishing member comprising a polishing member according to claim 1, a polishing head for holding a polishing object, and an end point detecting mechanism, wherein an abrasive is provided between the polishing member and the polishing object. In the interposed state, by relatively moving the polishing member and the object to be polished, the object to be polished is polished,
A polishing apparatus capable of optically measuring a polished state or a polished film thickness by irradiating a measurement light to the surface to be polished through the polishing member during the polishing.
光は、前記研磨部材を通過し、前記研磨部材と前記研磨
対象物との間の前記研磨剤を通過し、前記研磨対象物の
前記被研磨面で反射し、前記研磨部材と前記研磨対象物
との間の前記研磨剤を再び通過し、前記研磨部材を再び
通過し、前記終点検出機構へ戻り、 前記終点検出機構から出射する前記測定光の強度に対す
る前記終点検出機構へ戻る光の強度の比が1%以上であ
ることを特徴とする請求項14記載の研磨装置。15. The measurement light emitted from the end point detection mechanism passes through the polishing member, passes through the polishing agent between the polishing member and the object to be polished, and passes through the polishing object on the object to be polished. The measurement reflected by the polishing surface, passes through the abrasive again between the polishing member and the object to be polished, passes through the polishing member again, returns to the end point detection mechanism, and exits from the end point detection mechanism. The polishing apparatus according to claim 14, wherein a ratio of a light intensity returning to the end point detection mechanism to a light intensity is 1% or more.
光は、前記研磨部材を通過し、前記研磨部材と前記研磨
対象物との間の前記研磨剤を通過し、前記研磨対象物の
前記被研磨面で反射し、前記研磨部材と前記研磨対象物
との間の前記研磨剤を再び通過し、前記研磨部材を再び
通過し、前記終点検出機構へ戻り、 前記終点検出機構から出射する前記測定光の強度に対す
る前記終点検出機構へ戻る光の強度の比が5%以上であ
ることを特徴とする請求項14記載の研磨装置。16. The measurement light emitted from the end point detection mechanism passes through the polishing member, passes through the polishing agent between the polishing member and the object to be polished, and is applied to the surface of the object to be polished. The measurement reflected by the polishing surface, passes through the abrasive again between the polishing member and the object to be polished, passes through the polishing member again, returns to the end point detection mechanism, and exits from the end point detection mechanism. The polishing apparatus according to claim 14, wherein a ratio of an intensity of light returning to the end point detection mechanism to an intensity of light is 5% or more.
部材と研磨対象物を保持する研磨ヘッドと終点検出機構
とを具え、前記研磨部材と前記研磨対象物との間に研磨
剤を介在させた状態で、前記研磨部材と前記研磨対象物
を相対移動させることにより、前記研磨対象物を研磨
し、且つ前記研磨中に測定光を前記研磨部材を通して被
研磨面に照射することによって光学的に研磨状態または
研磨膜厚が測定可能とされている研磨装置において、 前記窓板の少なくとも1面に形成されている凹凸は、前
記測定光の波長より大きい段差を有することを特徴とす
る研磨装置。17. A polishing apparatus comprising: the polishing member according to claim 10; a polishing head for holding a polishing object; and an end point detecting mechanism, wherein an abrasive is provided between the polishing member and the polishing object. In the interposed state, the polishing member and the object to be polished are relatively moved to polish the object to be polished, and the measurement light is irradiated onto the surface to be polished through the polishing member during the polishing. A polishing apparatus capable of measuring a polished state or a polished film thickness, wherein the unevenness formed on at least one surface of the window plate has a step larger than the wavelength of the measurement light. apparatus.
装置に於ける前記研磨部材の最表面(研磨対象物と接触
する面)と前記窓板の前記最表面側の面との間隔の調整
方法に於いて、 前記終点検出機構で測定した信号に基づいて、前記研磨
部材の最表面と前記窓板の前記最表面側の面との間隔を
調整する段階を有することを特徴とする調整方法。18. A distance between an outermost surface (a surface in contact with an object to be polished) of the polishing member and a surface on the outermost surface side of the window plate in the polishing apparatus according to any one of claims 14 to 17. Adjusting the distance between the outermost surface of the polishing member and the uppermost surface of the window plate based on a signal measured by the end point detection mechanism. Adjustment method.
装置による研磨膜厚又は研磨終点の測定方法に於いて、 前記終点検出機構で測定した信号と予め測定し記憶され
ている信号とを比較する段階と、 前記終点検出機構で測定した信号と予め測定し記憶され
ている信号とが等しい時に前記終点検出機構で測定した
信号を研磨膜厚又は研磨終点の測定に用いない段階とを
有することを特徴とする測定方法。19. A method for measuring a polishing film thickness or a polishing end point by a polishing apparatus according to any one of claims 14 to 17, wherein a signal measured by said end point detecting mechanism and a signal measured and stored in advance. Comparing the signal measured by the end point detection mechanism and the signal measured in advance by the end point detection mechanism when the signal stored in advance is equal to the step of not using the signal measured by the end point detection mechanism for the measurement of the polishing film thickness or the polishing end point. A measuring method characterized by having:
装置を用いて半導体ウエハの表面を平坦化する工程を有
することを特徴とする半導体デバイス製造方法。20. A method of manufacturing a semiconductor device, comprising the step of flattening the surface of a semiconductor wafer using the polishing apparatus according to claim 14.
方法により製造されることを特徴とする半導体デバイ
ス。21. A semiconductor device manufactured by the semiconductor device manufacturing method according to claim 20.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2000090428A JP2001287158A (en) | 1999-03-31 | 2000-03-29 | Polishing member, polishing machine, adjusting method, measuring method, semiconductor device manufacturing method, and semiconductor device |
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JP11-91077 | 1999-03-31 | ||
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JP2000-25323 | 2000-02-02 | ||
JP2000025323 | 2000-02-02 | ||
JP2000090428A JP2001287158A (en) | 1999-03-31 | 2000-03-29 | Polishing member, polishing machine, adjusting method, measuring method, semiconductor device manufacturing method, and semiconductor device |
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JP2001287158A true JP2001287158A (en) | 2001-10-16 |
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ID=27306642
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JP2003526938A (en) * | 2000-03-15 | 2003-09-09 | ロデール ホールディングス インコーポレイテッド | Window with controlled wear rate |
WO2004049417A1 (en) * | 2002-11-27 | 2004-06-10 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and method for manufacturing semiconductor device |
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JP2010030019A (en) * | 2008-07-31 | 2010-02-12 | Shin Etsu Handotai Co Ltd | Double-sided polishing apparatus |
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US8834230B2 (en) | 2008-07-31 | 2014-09-16 | Shin-Etsu Handotai Co., Ltd. | Wafer polishing method and double-side polishing apparatus |
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KR20180082743A (en) * | 2017-01-11 | 2018-07-19 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus and control method thereof |
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