CN100349267C - Polishing pad and method for manufacturing semiconductor device - Google Patents
Polishing pad and method for manufacturing semiconductor device Download PDFInfo
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- CN100349267C CN100349267C CNB2003801041028A CN200380104102A CN100349267C CN 100349267 C CN100349267 C CN 100349267C CN B2003801041028 A CNB2003801041028 A CN B2003801041028A CN 200380104102 A CN200380104102 A CN 200380104102A CN 100349267 C CN100349267 C CN 100349267C
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Abstract
A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plain uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50 % over the wavelength range of 400-700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5-4 mm and a transmittance of not less than 80 % over the wavelength range of 600-700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.
Description
Technical field
The present invention relates to employed grinding pad when wafer surface concavo-convex carried out planarization with chemico-mechanical polishing (CMP), specifically, relate to have the mechanism that is used to utilize optics detect polishing progress etc. window grinding pad and used the manufacture method of the semiconductor device of this grinding pad.
Background technology
When making semiconductor device, carry out wafer surface form conductive film and by carry out photoetching, etching waits the operation that forms wiring layer, the operation that forms interlayer dielectric on wiring layer etc., utilize these operations wafer surface produce by electric conductor such as metal or insulator constitute concavo-convex.In recent years,, accompany with it, the technology of the concavo-convex planarization of wafer surface is become important though be miniaturization or multilayer wiredization that purpose is carried out distribution with the densification of semiconductor integrated circuit.
In general method as with the concavo-convex planarization of wafer surface adopts the CMP method.CMP is under with the state on the abradant surface that is pressed against grinding pad by abradant surface of wafer, the technology of using the grinding agent (hereinafter referred to as slip) of the slip shape that has disperseed abrasive material to grind.
The general lapping device that uses possesses the grinding plate 2, the support quilt that support grinding pad 1 and grinds the brace table (rubbing head) 5 of object (wafer) 4 and be used to carry out the lining material of the homogeneous pressurization of wafer, the feed mechanism of grinding agent for example as shown in Figure 1 among the CMP.Grinding pad 1 for example by attaching with two-sided tape, is installed on the grinding plate 2.Grinding plate 2 is disposed with the mode of being faced mutually by grinding object 4 according to the grinding pad 1 that makes each self-supporting with brace table 5, possesses rotating shaft 6,7 respectively.In addition, on brace table 5, be provided with and be used for and ground the pressing mechanism of object 4 to grinding pad 1 pushing.
Carrying out on this kind CMP, the problem of judgement of the flatness of wafer surface is being arranged.That is, need to detect the surface characteristic of arrival hope or the moment of flat state.,, testing wafer is regularly handled all the time, confirmed behind the result wafer that becomes product to be carried out milled processed about the thickness of oxide-film or grinding rate etc.
But, in this method, time and the cost of handling testing wafer become unnecessary, in addition, do not implement fully because of the distinctive loading effect of CMP, to grind difference as a result in the testing wafer and product wafer of processing in advance, when the product wafer not being tried to add man-hour in practice, then be difficult to carry out correct anticipation to processing result.
Thus, recently in order to solve described problem, when carrying out the CMP operation, wish to have the method in the moment that can detect the surface characteristic that can obtain to wish or thickness at the scene.For this kind detection, various methods have been used.Now, as the testing agency that has proposed, can enumerate
(1) coefficient of friction between wafer and pad is kept the variation of turning moment of head or platform as wafer and detected moment detection method (No. 5069002 specification of United States Patent (USP))
(2) detect the electrostatic capacitance method (No. 5081421 specification of United States Patent (USP)) of the thickness that remains in the dielectric film on the wafer
(3) in rotation platform, pack into and utilize the method for optics (spy opens flat 9-7985 communique, the spy opens flat 9-36072 communique) of the thickness MA monitoring agency that laser carries out
(4) resolve by the vibration analysis method that is installed in the frequency spectrogram that vibration on head or the axle or acceleration sensor obtain
(5) be built in the interior differential transformer applying detection method of head
(6) to the frictional heat or the slip of wafer and grinding pad and the reaction heat infrared emission thermometer method for measuring (No. 5196353 specification of United States Patent (USP)) of being ground object
(7) measure by the method (spy opens clear 55-106769 communique, the spy opens flat 7-135190 communique) of the thickness of grinding object by measuring hyperacoustic propagation time
(8) measure the method (No. 5559428 specification of United States Patent (USP)) etc. of electrical sheet resistance of the metal film of wafer surface.Now, though the method for using (1), the viewpoint of the spatial decomposition ability from measure precision or noncontact mensuration considers that the method for (3) becomes main flow gradually more.
The optical de-tection means of the method for so-called (3) is light beam to be passed window (transmission region) cross grinding pad to wafer illumination specifically, by detecting the method (Figure 12) that the interference signal that is produced by its reflection detects the terminal point of grinding.
Now, in general use He-Ne laser or used the white light that has the halogen lamp of wavelength light at 380～800nm as light beam with near the wavelength light the 600nm.
In this kind method, the variation of the thickness of the superficial layer by monitoring wafer learns that the approximate degree of depth of concave-convex surface is determined terminal point.In the moment in the variation of this kind thickness and concavo-convex deep equality, just finish the CMP program.In addition, employed grinding pad in the end point determination method of the grinding of carrying out for the mechanism that utilizes this kind optics and this method has proposed various schemes.
Announced at least a portion, have solid and a homogeneous see through the grinding pad (special table flat 11-512977 communique) of 190nm to the transparent polymer flake of the wavelength light of 3500nm.In addition, also announce the scheme (spy opens flat 9-7985 communique) that the grinding pad that has inserted the transparent stopper that has ladder is arranged.In addition, also announce have that to have with burnishing surface be the grinding pad (spy opens flat 10 1 No. 83977 communiques) of the transparent stopper of same level.In addition, also announce have the light transmission member to contain water-insoluble matrix material, be dispersed in that water soluble particle in this water-insoluble matrix material forms, the light penetration of 400～800nm is the grinding pad (spy opens the 2002-324769 communique, the spy opens the 2002-324770 communique) more than 0.1%.All announce the situation of the window use of using as end point determination.
As previously mentioned, though use He-Ne laser or used the white light etc. of halogen lamp as light beam, under the situation of use white light, following advantage is arranged, that is, various wavelength light can be got on the wafer, can be obtained the profile of more wafer surface.Under the situation that this white light is used as light beam, need in the wave-length coverage of broad, improve accuracy of detection.In addition, from now in the highly integrated subminaturization that semiconductor is made, the distribution width of integrated circuit is estimated will be more and more littler, the end point determination that will need high-precision optics at that time, but the window that in the past end point determination is used does not have in the wave-length coverage of broad the fully precision of satisfaction degree.
Summary of the invention
One of the present invention's purpose is, can realize under the state that grinds that high-precision optical end point detects, and the good grinding pad of abrasive characteristic (uniform surface etc.) so just can be provided and use the manufacture method of the semiconductor device of this grinding pad.
The present invention's two purpose is, can realize under the state that grinds that high-precision optical end point detects, particularly, so just can provide abrasive characteristic (uniform surface etc.) good grinding pad using He-Ne laser or near 600～700nm, have in the lapping device of semiconductor laser of excitation wavelength and can being used ideally.In addition, its purpose also is, providing can be easily and the grinding pad of making at an easy rate, and the manufacture method that the semiconductor device that has used this grinding pad is provided.
On the other hand, the window of being put down in writing in the described patent documentation (transmission region) is the object or the circular object of more microscler shape on the circumferencial direction of the grinding pad shown in Fig. 2,3.But under the situation of the window of foregoing shape,, therefore just have on part that contacts at window and the part that does not contact the grinding inhomogenous problem that becomes because window only with in a certain segment set of wafer contacts in the grinding of carrying out wafer.In addition, also has the problem that only can only obtain by the grinding profile of the part that is limited that window contacted.
The present invention's three purpose is, can realize under the state that grinds that high-precision optical end point detects, provide abrasive characteristic (particularly internal homogeneity) good, and can obtain relative broad range wafer the grinding profile grinding pad and used the manufacture method of the semiconductor device of this grinding pad.
The inventor furthers investigate repeatedly in view of aforesaid present situation, found that, the transmission region of using as grinding pad has the transmission region of certain given light transmittance by use, just can solve described problem.
That is, one of the present invention is an employed grinding pad with abrasive areas and transmission region in chemico-mechanical polishing, it is characterized in that, the light transmittance in the wavelength 400～700nm of transmission region region-wide is more than 50%.
The rate of change of the light transmittance among wavelength 400～700nm that described transmission region is preferably represented with following formula is below 50%.
Rate of change (%)={ the maximum transmission rate among (the minimum light transmittance among the maximum transmission rate-400～700nm among 400～700nm)/400～700nm } * 100
In general, the decay of the light intensity of the transmission region by grinding pad is few more, then can improve the accuracy of detection of grinding endpoint or the mensuration precision of thickness more.Thus, the degree of the light transmittance under the employed mensuration light wavelength just becomes very important for the accuracy of detection of decision grinding endpoint or the mensuration precision of thickness.
One of the present invention's transmission region is little in the decay of the light transmittance of short wavelength side, can accuracy of detection be kept very high in the wave-length coverage of broad.
The light transmittance of employed transmission region in wavelength 400～700nm region-wide is more than 50%, preferably more than 70% in one of the present invention's the grinding pad.Light transmittance less than 50% situation under because the influence etc. of the influence of feed pulp layer or polishing vestige in grinding, the decay of the light intensity by transmission region becomes big, the mensuration precision of the accuracy of detection of grinding endpoint or thickness reduces.
In addition, the rate of change of the light transmittance among the wavelength 400～700nm that represents with above-mentioned formula of transmission region is more preferably below 30%.Surpass under 50% the situation at the rate of change of light transmittance, because the decay of the light intensity of the transmission region by short wavelength side will become greatly, the amplitude of interference light diminishes, and therefore just has the tendency of the mensuration precision reduction of the accuracy of detection of grinding endpoint or thickness.
Light transmittance under the wavelength 400nm of described transmission region is preferably in more than 70%.If the light transmittance under the wavelength 400nm more than 70%, then can further improve the accuracy of detection of grinding endpoint or the mensuration precision of thickness.
In addition, the light transmittance in the wavelength 500～700nm of described transmission region region-wide is preferred more than 90%, more preferably more than 95%.If light transmittance more than 90%, then can greatly improve the accuracy of detection of grinding endpoint or the mensuration precision of thickness.
In addition, among the wavelength 500～700nm of described transmission region the difference of each light transmittance preferably in 5%, more preferably in 3%.If the difference of the light transmittance under each wavelength in 5%, is then carried out under the situation of beam split parsing at the thickness to wafer, owing to can on wafer, shine certain incident light, can calculate correct reflectivity, therefore just can improve accuracy of detection.
The present invention's two is employed grinding pads with abrasive areas and transmission region in chemico-mechanical polishing, it is characterized in that, the thickness of transmission region is 0.5～4mm, and the light transmittance in the wavelength 600～700nm of transmission region region-wide is more than 80%.
As mentioned above, general employed lapping device is owing to use the laser with near the detection light that has excitation wavelength 600～700nm, if therefore the light transmittance in this wavelength region may then can obtain high reverberation, thereby can improve the thickness accuracy of detection more than 80%.Light transmittance less than 80% situation under, reverberation diminishes, the thickness accuracy of detection has the tendency of reduction.
The present invention two in, the light transmittance in the wavelength 600～700nm of transmission region region-wide is preferably more than 90%.
And, one of described the present invention and the light transmittance of two transmission region be the thickness of transmission region value when being 1mm or the value when being scaled the thickness of 1mm.In general, light transmittance can change along with the thickness of transmission region according to the rule of Lambert-Beer.Because thickness is big more, then light transmittance is just low more, therefore calculates the light transmittance that thickness is made as a timing.
The present invention's three is employed grinding pads with abrasive areas and transmission region in chemico-mechanical polishing, it is characterized in that, described transmission region is located between the central part and all ends of grinding pad, and diametric length (D) is more than 3 times of length (L) of circumferencial direction.
As mentioned above, owing to compare diametric length (D) in the shape more than 3 times by transmission region being made as with the length (L) of the circumferencial direction of grinding pad, in the grinding of carrying out wafer, transmission region just can be not only with a certain segment set of wafer in contact, and contact equably with wafer comprehensively, therefore just wafer can be ground equably, thereby can improve abrasive characteristic.In addition, in grinding,, just can obtain the grinding profile of the wafer of wide region owing to, laser interferometer is suitably moved in the diameter orientation by in having the scope of transmission region, so just can be reliably and judge the terminal point of polish process simply.
Here, so-called diametric length (D) is meant, passes the center of gravity of transmission region, and connects center and the straight line of all ends and the length of transmission region superposed part of grinding pad.In addition, the length of so-called circumferencial direction (L) is meant, passes the center of gravity of transmission region, and with the straight line of the straight line quadrature of the center that is connected grinding pad and all ends and the transmission region length of big ground superposed part.
The present invention three in, transmission region is located between the central part and all ends of grinding pad.In general, because the diameter of wafer is littler than the radius of grinding pad, if therefore transmission region is located between the central part and all ends of grinding pad, then be enough to obtain the grinding profile of the wafer of wide region, owing to grow or during with the length of diameter same degree when transmission region being made as than the radius of grinding pad, abrasive areas is reduced, and grinding efficiency reduces, and is therefore not ideal enough.
In addition, the present invention three in, under 3 times the situation of diametric length (D) less than the length (L) of circumferencial direction of transmission region, then, can be defined to the part of wafer illumination light beam in the certain limit because diametric length falls short of, therefore just not enough concerning the thickness detection of wafer, when making diametric length long enough, the length of circumferencial direction (L) is also elongated as a result, because the abrasive areas minimizing, so grinding efficiency just has the tendency of reduction.
In addition, the present invention three in, consider the preferred rectangle of the shape of transmission region from the viewpoint that can make simply.
The present invention three in, the diametric length (D) of best described transmission region is 1/4～1/2 times by the diameter of abrasive body.Under less than 1/4 times situation, therefore just not enough for the thickness of wafer detects because can be to being defined in the certain limit by the part of abrasive body (wafer etc.) illumination beam, grind the inhomogenous tendency that becomes.On the other hand, surpassing under 1/2 times the situation, because the abrasive areas minimizing, so grinding efficiency has the tendency of reduction.And, though transmission region has at least 1 to get final product in grinding pad, also can be provided with more than 2.
In addition, below the preferred 100 μ m of the thickness deviation of described transmission region.
One of the present invention～three in, the formation material optimization polyurethane resin of abrasive areas and transmission region.In addition, preferably contain the material that organic isocyanate of the same race, polyalcohol and chain elongation agent form as the polyurethane resin of the formation material of abrasive areas with as the polyurethane resin of the formation material of transmission region.By abrasive areas and transmission region are constituted with material of the same race, when carrying out the grinding process of grinding pad, just the polishing amount can be made as same degree, so just can on grinding pad is comprehensive, obtain high flatness.On the other hand, under situation about not constituting by material of the same race, because polishing amount difference, so the flatness of grinding pad just has damaged tendency.Under this situation, preferably hardness or the polishing amount with abrasive areas and transmission region is adjusted into same degree.
One of the present invention～three in, the preferred non-foaming body of the formation material of described transmission region.If be non-foaming body, then, therefore just can detect correct reflectivity, thereby can improve the accuracy of detection of the optical end point of grinding owing to can suppress scattering of light.
In addition, the side surfaces at described transmission region does not preferably have the sag and swell that keeps upgrading lapping liquid.When the side surfaces at transmission region had very big concave-convex surface, the slip that contains additive such as abrasive material will store at recess, caused that scattering of light absorbs, thus the tendency that has pair accuracy of detection to impact.In addition, the another side side surface of transmission region does not preferably have very big concave-convex surface yet.This be because, when very big concave-convex surface, then cause scattering of light easily, might impact accuracy of detection.
One of the present invention～three in, the preferred fine foaming body of the formation material of described abrasive areas.
In addition, one of the present invention～three in, preferably be provided with groove in the side surfaces of described abrasive areas.
In addition, below the preferred 70 μ m of the mean air bubble diameter of described fine foaming body, more preferably below the 50 μ m.If mean air bubble diameter is below 70 μ m, then flatness (flatness) is just more good.
In addition, the preferred 0.5～1.0g/cm of the proportion of described fine foaming body
3, more preferably 0.7～0.9g/cm
3When proportion less than 0.5g/cm
3The time, the intensity on the surface of abrasive areas reduces, and the flatness of being ground object is lower, in addition, when greater than 1.0g/cm
3The time, the number of the micro air bubble on the surface of abrasive areas tails off, though flatness is good, grinding rate has the tendency that reduces.
In addition, the hardness of described fine foaming body is represented preferred 45～65 degree, more preferably 45～60 degree with ASKER D hardness.Under the situation of ASKERD hardness less than 45 degree, the flatness of being ground object reduces, and under the situation greater than 65 degree, though flatness is good, the uniformity (homogeneity) of being ground object has the tendency of reduction.
In addition, the compression ratio of described fine foaming body is preferred 0.5～5.0%, and more preferably 0.5～3.0%.If compression ratio in described scope, then can realize flatness and uniformity two aspects fully.And compression ratio is a value of utilizing following formula to calculate.
Compression ratio (%)=(T1-T2)/T1} * 100
T1: fine foaming body is begun the (300g/cm with 30KPa from no load state
2) the thickness of the load of the stress fine foaming body when keeping for 60 seconds
T2: begin (1800g/cm with 180KPa from the state of T1
2) the thickness of the load of the stress fine foaming body when keeping for 60 seconds
In addition, the compressive recovery rate of described fine foaming body is preferred 50～100%, and more preferably 60～100%.Under less than 50% situation, along with load in grinding is added on the abrasive areas repeatedly, on the thickness of abrasive areas, will manifest very big variation, the stability of abrasive characteristic has the tendency of reduction.And compressive recovery rate is a value of utilizing following formula to calculate.
Compressive recovery rate (%)={ (T3-T2)/(T1-T2) } * 100
T1: fine foaming body is begun the (300g/cm with 30KPa from no load state
2) the thickness of the load of the stress fine foaming body when keeping for 60 seconds
T2: begin (1800g/cm with 180KPa from the state of T1
2) the thickness of the load of the stress fine foaming body when keeping for 60 seconds
T3: begin under no load state, to keep for 60 seconds from the state of T2, thereafter, with 30KPa (300g/cm
2) the thickness of the load of the stress fine foaming body when keeping for 60 seconds
In addition, more than the preferred 200MPa of storage modulus of elasticity under 40 ℃ of described fine foaming body, 1Hz, more preferably more than the 250MPa.Under the situation of storage modulus of elasticity less than 200MPa, the intensity on the surface of abrasive areas reduces, and the flatness of being ground object has the tendency of reduction.And so-called storage modulus of elasticity is meant, fine foaming body with the Measurement of Dynamic Viscoelasticity device, is used the stretching experiment anchor clamps, applies sine wave oscillations and the modulus of elasticity measured.
In addition, the invention still further relates to the manufacture method of the semiconductor device of the operation that comprises the surface of using foregoing grinding pad to come grinding semiconductor chip.
Description of drawings
Fig. 1 is the summary pie graph of an example of employed lapping device in the past during expression CMP grinds.
Fig. 2 is the skeleton diagram of an example that expression has the grinding pad of transmission region in the past.
Fig. 3 is the skeleton diagram of another example that expression has the grinding pad of transmission region in the past.
Fig. 4 is the skeleton diagram of an example of the grinding pad of three the transmission region of expression with the present invention.
Fig. 5 is the skeleton diagram of another example of the grinding pad of three the transmission region of expression with the present invention.
Fig. 6 is the skeleton diagram of another example of the grinding pad of three the transmission region of expression with the present invention.
Fig. 7 is the summary section of an example of expression grinding pad of the present invention.
Fig. 8 is the summary section of another example of expression grinding pad of the present invention.
Fig. 9 is the summary section of another example of expression grinding pad of the present invention.
Figure 10 is the summary section of another example of expression grinding pad of the present invention.
Figure 11 is the skeleton diagram of the grinding pad of expression comparative example 3.
Figure 12 is the summary pie graph of an example that expression has the CMP lapping device of end point determination device of the present invention.
Embodiment
One of the present invention～three grinding pad have abrasive areas and transmission region.
The formation material of the transmission region of one of the present invention's grinding pad is as long as the region-wide light transmittance of wavelength 400～700nm more than 50%, just is not particularly limited.
The formation material of the transmission region of the present invention's two grinding pad is as long as the region-wide light transmittance of wavelength 600～700nm more than 80%, just is not particularly limited.
Though the formation material of the transmission region of the present invention's three grinding pad is not particularly limited, preferably (be generally in 400～700nm) light transmittance measuring wavelength region may more than 10%.Light transmittance less than 10% situation under, because of the influence of the slip that is supplied in grinding or polishing vestige etc., reverberation tails off, thereby has the thickness accuracy of detection to reduce the tendency that maybe can't detect.
As the formation material of this kind transmission region, for example can enumerate polyurethane resin, mylar, polyamide, acrylic resin, polycarbonate resin, halogen resin (polyvinyl chloride, polytetrafluoroethylene, Kynoar etc.), polystyrene, olefine kind resin (polyethylene, polypropylene etc.), epoxy resin and photoresist etc.They both can use separately, also can use simultaneously more than 2 kinds.And, preferably use with abrasive areas in the rerum natura materials similar of employed formation material or abrasive areas.The high polyurethane resin of resistance to wear that especially preferably can suppress the light scattering of the transmission region that causes by the polishing vestige in grinding.
Described polyurethane resin is the material that is made of organic isocyanate, polyalcohol and chain elongation agent.
As organic isocyanate, can enumerate 2,4-toluene di-isocyanate(TDI), 2,6-toluene di-isocyanate(TDI), 2,2 '-methyl diphenylene diisocyanate, 2,4 '-methyl diphenylene diisocyanate, 4,4 '-methyl diphenylene diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-XDI, m-XDI, hexamethyl vulcabond, 1,4-cyclohexane diisocyanate, 4,4 '-dicyclohexyl methyl hydride diisocyanate, isophorone vulcabond etc.They both can use separately, also can use simultaneously more than 2 kinds.
As organic isocyanate, except described diisocyanate cpd, also can use the above multiple functional radical polyisocyanate compounds of 3 functional groups.As the isocyanate compound of multiple functional radical, sell on the market Desmodur-N (Beyer Co., Ltd's system) or trade name Duranate (industrial group of Asahi Chemical Industry system) form series vulcabond add the adult compound.The above polyisocyanate compounds of these 3 functional groups when using separately, carry out prepolymer synthetic in because gelation easily, so preferably add in the diisocyanate cpd and use.
As polyalcohol, can enumerate with the polytetramethylene ether glycol be representative PPG, with the polybutylene adipic acid be the PEPA of representative, the polyester-polycarbonate polyalcohol that reacts with the polyester-polycarbonate polyalcohol of the examples such as reactant of such polyester-diol of PCL polyalcohol, PCL and alkylene carbonic ester, the reactant mixture and the organic dicarboxylic acid that make ethylene carbonate and the reaction of multivalence alcohol and make gained thereafter and utilize poly hydroxyl compound and polycarbonate polyol that the ester exchange reaction of aryl carbonates obtains etc.They both can use separately, also can use simultaneously more than 2 kinds.
In addition, as polyalcohol, except described polyalcohol, can also make spent glycol, 1 simultaneously, 2-propylene glycol, 1, ammediol, 1,4-butanediol, 1,6-hexylene glycol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl isophthalic acid, 5-pentanediol, diethylene glycol, triethylene glycol, 1, low molecular weight polyols such as two (2-hydroxyl-oxethyl) benzene of 4-.
As the chain elongation agent, can enumerate ethylene glycol, 1, the 2-propylene glycol, 1, ammediol, 1, the 4-butanediol, 1, the 6-hexylene glycol, neopentyl glycol, 1, the 4-cyclohexanedimethanol, the 3-methyl isophthalic acid, the 5-pentanediol, diethylene glycol, triethylene glycol, 1, low molecular weight polyols class such as two (2-hydroxyl-oxethyl) benzene of 4-or with 2, the 4-toluenediamine, 2, the 6-toluenediamine, 3,5-diethyl-2, the 4-toluenediamine, 4,4 '-two-sec-butyl-diaminodiphenyl-methane, 4,4 '-diaminodiphenyl-methane, 3,3 '-two chloro-4,4 '-diaminodiphenyl-methane, 2,2 ', 3,3 '-tetrachloro-4,4 '-diaminodiphenyl-methane, 4,4 '-diaminourea-3,3 '-diethyl-5,5 '-dimethyl diphenylmethane, 3,3 '-diethyl-4,4 '-diaminodiphenyl-methane, 4,4 '-methylene-two-methyl Anthranilate, 4,4 '-methylene-two-ortho-aminobenzoic acid, 4,4 '-diamino diphenyl sulfone, N, N '-two-sec-butyl-p-phenylenediamine, 4,4 '-methylene-two (3-chloro-2, the 6-diethylamide), 3,3 '-two chloro-4,4 '-diaminourea-5,5 '-diethyl diphenyl methane, 1, two (the 2-aminobenzene sulphur) ethane of 2-, the amino benzoate of triethylene glycol-two-p-, 3, two (the first sulphur)-2 of 5-, the polyamine class of examples such as 4-toluenediamine.They both can use a kind, also can be mixed with two or more.But,,, therefore preferably cooperate with the degree of not damaging rerum natura or light transmission owing to often self is painted or use the coloring resin that they form for the polyamine class.In addition, when use has the compound of aromatic hydrocarbyl,, therefore especially preferably do not use this kind compound, can cooperate yet with the degree of not damaging desired light transmission because the light transmittance of short wavelength side has the tendency of reduction.
The required rerum natura of the transmission region that the ratio of the organic isocyanate in the described polyurethane resin, polyalcohol and chain elongation agent can be made according to separately molecular weight or by their waits suitably and changes.Transmission region is in order to obtain described characteristic, and the isocyanates radix of organic isocyanate is preferred 0.95～1.15 with respect to total functional group's (hydroxyl+amino) number of polyalcohol and chain elongation agent, and more preferably 0.99～1.10.
Though described polyurethane resin can use known urethane technology such as fusion method, solwution method to make, when considering cost, operating environment etc., preferably make with fusion method.
Polymerization order as described polyurethane resin, though can with any one of prepolymer method, one-step method, but in general adopt in advance by organic isocyanate and the terminal prepolymer of polyalcohol synthesizing isocyanate, the prepolymer method that the chain elongation agent is reacted with it.And, though on sale on market by the terminal prepolymer of isocyanates of organic isocyanate and polyalcohol manufacturing, so long as be fit to the present invention, also can use them, utilize prepolymer method with employed polyurethane polymerization among the present invention.
The manufacture method of transmission region is not particularly limited, and can utilize known method to make.For example, can use following method, promptly, use the slicing machine of the band saw mode or the mode of plane to make the method for given thickness the bulk that utilizes the polyurethane resin of described method manufacturing, in the mould of cavity, flow into resin and the method that makes it to harden, the method for having used paint-on technique or thin slice forming technique etc. with given thickness.And, in transmission region, under the alveolate situation,, scattering of light becomes big because of making catoptrical decay, and the mensuration precision of the accuracy of detection of grinding endpoint or thickness has the tendency of reduction.So, for this kind bubble is removed, be preferably in mix described material before, by being decompressed to below the 10Torr gas contained in the material is removed fully.In addition, in mixed agitating procedure, in order not sneak into bubble, under the situation of common employed agitator formula mixer, preferably to stir below the rotating speed 100rpm.In addition, in agitating procedure, preferably also under reduced pressure carry out.In addition, rotation revolution formula mixer since under the height rotation bubble also be difficult to sneak into, therefore use this mixer to stir, deaeration is preferable methods.
One of the present invention and two in, though the shape of transmission region or size are not particularly limited, preferably be made as the shape identical, the size of equal extent with the peristome of abrasive areas.
On the other hand, the present invention three in, as long as transmission region form is compared diametric length (D) with the length (L) of the circumferencial direction of grinding pad be shape more than 3 times, just is not particularly limited, and specifically, can enumerate the shape of being put down in writing in Fig. 4～6.
In addition, one of the present invention and three in, though the thickness of transmission region also is not particularly limited, preferably be made as the thickness identical or below it with the thickness of abrasive areas.Under the transmission region situation thicker, just might be in grinding damage and be ground object, or be ground object (wafer) and break away from from brace table (rubbing head) because of outstanding part than abrasive areas.
On the other hand, the present invention two in, the thickness of transmission region is 0.5～4mm, preferred 0.6～3.5mm.This is because transmission region preferably is made as the thickness identical with the thickness of abrasive areas or below it.Under the transmission region situation thicker, just might be in grinding damage and be ground object because of outstanding part than abrasive areas.On the other hand, under thin excessively situation, because durability becomes inadequately, slip stores easily, so detection sensitivity just has the tendency of reduction.
In addition, one of the present invention～three in, below the preferred 100 μ m of the thickness deviation of transmission region, more preferably below the 50 μ m, below the preferred especially 30 μ m.Deviation at thickness surpasses under the situation of 100 μ m, owing to can become material with very big fluctuating, produce and the different part of contact condition of being ground object, the therefore tendency that just has pair abrasive characteristic (internal homogeneity or planarization characteristics etc.) to impact.Particularly, at transmission region is non-foaming body and abrasive areas is under the situation of fine foaming body, because the hardness of transmission region is compared quite big with the hardness of abrasive areas, therefore the deviation of the thickness of transmission region is compared with the deviation of the thickness of abrasive areas, has pair abrasive characteristic to cause the tendency of bigger influence.
As the method that suppresses thickness deviation, can enumerate and to be made as the method for the sheet surface polishing of given thickness.Polishing different abrasive sheets such as preferably using granularity carries out stage by stage.And under the situation with the transmission region polishing, surface roughness is the smaller the better.Under the bigger situation of surface roughness, because in the incident light generation irregular reference of transmission region surface, so the light transmittance reduction, accuracy of detection has the tendency of reduction.
The formation material of abrasive areas so long as the common material that uses as the material of grinding layer just can use with being not particularly limited, but the preferred fine foaming body of use among the present invention.By adopting fine foaming body just can keep slip, thereby can increase grinding rate in the bubble part that is arranged in the surface.
As the formation material of abrasive areas, for example can enumerate polyurethane resin, mylar, polyamide, acrylic resin, polycarbonate resin, halogen resin (polyvinyl chloride, polytetrafluoroethylene, Kynoar etc.), polystyrene, olefine kind resin (polyethylene, polypropylene etc.), epoxy resin and photoresist etc.They both can use separately, also can use simultaneously more than 2 kinds.And, the formation material of abrasive areas, though can also can be different compositions both with the transmission region same composition, employed formation material material of the same race in preferred use and the transmission region.
Polyurethane resin is because high abrasion resistance, and can carry out various changes and easily obtain polymer by raw material is formed with required rerum natura, therefore be the particularly preferred material of formation material as abrasive areas.
Described polyurethane resin is the material that is made of organic isocyanate, polyalcohol, chain elongation agent.
Employed organic isocyanate is not particularly limited, and for example can enumerate foregoing organic isocyanate.
Employed polyalcohol is not particularly limited, and for example can enumerate foregoing polyalcohol.And, though the number-average molecular weight of these polyalcohols is not particularly limited, consider from the viewpoints such as elastic characteristic of the polyurethane of gained, preferred 500～2000, more preferably 500～1500.When number-average molecular weight less than 500 the time, use its polyurethane just not have enough elastic characteristics, become more crisp polymer.Thus, just become really up to the mark, become the reason of the cut of the abradant surface that causes being ground object by the grinding pad of this polyurethane manufacturing.In addition, because wearing and tearing are therefore also not ideal enough from the viewpoint consideration of pad life easily.On the other hand, when number-average molecular weight surpasses 2000, owing to use its polyurethane deliquescing, therefore tendency in variation aspect the planarization characteristics is just arranged by the grinding pad of this polyurethane manufacturing.
In addition, the molecular weight distribution of employed polyalcohol (weight-average molecular weight/number-average molecular weight) is preferably less than 1.9, more preferably below 1.7.When using molecular distribution at the polyalcohol 1.9 or more, become big by the temperature dependency of the hardness (modulus of elasticity) of the polyurethane of its acquisition, the difference of the hardness (modulus of elasticity) of grinding pad under different temperatures of being made by this polyurethane becomes greatly.Because of producing frictional heat at grinding pad with between by the grinding object, the temperature of the grinding pad during grinding just changes.So, in abrasive characteristic, just create a difference, not ideal enough.Molecular weight distribution for example can be measured by using the GPC device to convert with standard P PG (polypropylene polyalcohol).
In addition, as polyalcohol, except the polyalcohol of described HMW, can also make spent glycol, 1 simultaneously, 2-propylene glycol, 1, ammediol, 1,4-butanediol, 1,6-hexylene glycol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl isophthalic acid, 5-pentanediol, diethylene glycol, triethylene glycol, 1, low molecular weight polyols such as two (2-hydroxyl-oxethyl) benzene of 4-.
In addition, the ratio of high molecular weight components in the polyalcohol and low molecular weight compositions is to be determined by the desired characteristic of the abrasive areas made from them.
As the chain elongation agent, can enumerate with 2, the 4-toluenediamine, 2, the 6-toluenediamine, 3,5-diethyl-2, the 4-toluenediamine, 4,4 '-two-sec-butyl-diaminodiphenyl-methane, 4,4 '-diaminodiphenyl-methane, 3,3 '-two chloro-4,4 '-diaminodiphenyl-methane, 2,6-two chloro-p-phenylenediamines, 4,4 '-di-2-ethylhexylphosphine oxide (2, the 3-dichloroaniline), 2,2 ', 3,3 '-tetrachloro-4,4 '-diaminodiphenyl-methane, 4,4 '-diaminourea-3,3 '-diethyl-5,5 '-dimethyl diphenylmethane, 3,3 '-diethyl-4,4 '-diaminodiphenyl-methane, 4,4 '-methylene-two-methyl Anthranilate, 4,4 '-methylene-two-ortho-aminobenzoic acid, 4,4 '-diamino diphenyl sulfone, N, N '-two-sec-butyl-p-phenylenediamine, 4,4 '-methylene-two (3-chloro-2, the 6-diethylamide), 3,3 '-two chloro-4,4 '-diaminourea-5,5 '-diethyl diphenyl methane, 1, two (the 2-aminobenzene sulphur) ethane of 2-, the amino benzoate and 3 of triethylene glycol-two-p-, two (the first sulphur)-2 of 5-, the polyamine class or the described low molecular weight polyols of examples such as 4-toluenediamine.They both can use a kind, also can use simultaneously more than 2 kinds.
The required rerum natura of the abrasive areas that the ratio of the organic isocyanate in the described polyurethane resin, polyalcohol and chain elongation agent can be made according to separately molecular weight or by their etc. is carried out various changes.In order to obtain the good abrasive areas of abrasive characteristic, the isocyanates radix of organic isocyanate is preferred 0.95～1.15 with respect to total functional group's (hydroxyl+amino) number of polyalcohol and chain elongation agent, and more preferably 0.99～1.10.
Described polyurethane can utilize the method manufacturing identical with foregoing method.And, as required, also can in polyurethane resin, add stabilizer, surfactant, lubricant, pigment, filler, anti-live agent and other additives such as antioxidant.
Though the method for the fine foaming of described polyurethane resin is not particularly limited, for example can enumerates the method for use foaming such as utilizing the method for adding hollow bead, the foaming of machinery and the foaming of chemistry etc.And, though also each method and usefulness especially preferably can have been used the foaming of the machinery of the silicon class surfactant that does not have the reactive hydrogen base as the copolymer of gathering alkylsiloxane and polyethers etc.As this silicon class surfactant, can be with SH-192 (TORE DOWCONINGSILICON system) etc. as preferred compound example.
Regarding to the example of making the method for the polyurethane foaming body of employed independent foaming type in the abrasive areas down describes.The manufacture method of this kind polyurethane foaming body has following operation.
1) agitating procedure of the bubble dispersion liquid of the terminal prepolymer of making isocyanates
In the terminal prepolymer of isocyanates, add silicon class surfactant, stir, non-reactive gas is disperseed and formation bubble dispersion liquid as micro air bubble with non-reactive gas.The terminal prepolymer of isocyanates is under the situation of solid at normal temperatures, preheating, melts to suitable temperature and uses.
2) curing agent (chain elongation agent) mixed processes
In described bubble dispersion liquid, add the chain elongation agent, mix and stir.
3) hardening process
The terminal prepolymer of the isocyanates that has mixed the chain elongation agent is injected mould, heat hardening.
As the non-reactive gas that uses in order to form micro air bubble, preferably not flammable gas, specifically, can example nitrogen, inert gas or their mists such as oxygen, carbon dioxide, helium or argon gas, say from cost and most preferably to use dry and removed the air of moisture.
, non-reactive gas is scattered in the agitating device in the terminal prepolymer of the isocyanates that comprises silicon class surfactant as being made the micro air bubble shape, known agitating device can be not particularly limited to use, homogenizer, dissolvers, twin shaft planet strrier (planet strrier) etc. can be listed specifically.Though the shape of the agitator of agitating device also is not particularly limited, when the agitator of roll shape is beaten in use, owing to can obtain micro air bubble, therefore preferred.
And, in agitating procedure, make the stirring of bubble dispersion liquid and the interpolation chain elongation agent in the mixed processes and the stirring that mixes, using different agitating devices also is desirable mode.Particularly the stirring in the mixed processes also can be the stirring that does not form bubble, preferably uses the very agitating device of air pocket of non-involvement.As this kind agitating device, preferred planet strrier.Even use identical agitating device also to have no relations, preferably also adjust the adjustment of the stirring conditions such as rotary speed of agitator as required and use as the agitating device of agitating procedure and mixed processes.
In the manufacture method of the fine foaming body of described polyurethane, to being flowed into mould, the bubble dispersion liquid reacts that foaming body till no longer flow heats, solidify the back, have the effect of the physical characteristic that improves foaming body, highly desirable.Can adopt the bubble dispersion liquid flowed into yet and insert soon after the mould in the heating baking oven and carry out the condition that solidify the back, even because under this kind condition, heat can not passed to reacted constituent immediately yet, so bubble diameter just can not become big.When sclerous reaction is carried out under normal pressure,, therefore preferred because bubble shape is stable.
In the manufacturing of described polyurethane resin, also can use the catalyst of known promotion polyurethane reactions such as tertiary amines, organic tin.The kind of catalyst, addition, consider mixed processes after, flow into given shape mould flowing time and select.
The manufacturing of described polyurethane foaming body, it both can be the batch processing mode that in container, each composition metering is dropped into, stirs, also can be to supply with each composition and non-reactive gas continuously to agitating device and stir in addition, the bubble dispersion liquid is sent and be made the continuous mode of production of formed products.
The abrasive areas that becomes grinding layer is that the polyurethane foam type will be as mentioned above made cuts to given size and makes.
One of the present invention～three in, be preferably in the abrasive areas that constitutes by fine foaming body and ground on the side surfaces that object contacts, be provided with the groove that is used to keep upgrading slip.Though this abrasive areas is owing to formed by fine foaming body, therefore on lapped face, has a lot of openings, has the effect that keeps slip, but for the retentivity of further slip with carry out the renewal of slip effectively, also has groove on the side surfaces in addition in order to prevent by the breakage of being ground object that causes with the absorption of being ground object, to be preferably in.Groove is so long as keep upgrading the surface configuration of slip, just be not particularly limited, for example can enumerate XY grid groove, concentric circles groove, through hole, the hole that does not run through, post, cylinder, spiral groove, off-centre operation shape groove, radial slot and example that these grooves have been made up in many ways.In addition, separation, well width, groove depth etc. also can suitably be selected to form ad lib.In addition, though these grooves generally are regular grooves,, also can in certain scope, change separation, well width, groove depth etc. for the maintenance property upgraded with slip is made as required degree.
Though the formation method of described groove is not particularly limited, for example can enumerate the such anchor clamps of lathe tool that use intended size carry out the method for machine cut, in mould, flow into resin with given surface configuration and the method for hardening, with having the method for the pressing plate of given surface configuration, use method that photoetching forms, using method that printing process forms and utilization to use method that the laser of carbon dioxide laser etc. forms etc. with the resin drawing.
Though the thickness of abrasive areas is not particularly limited, be about 0.8～2.0mm.As the method for the abrasive areas of making described thickness, can enumerate with the bulk of described fine foaming body with the slicing machine of the band saw mode or the mode of plane make given thickness method, make the resin inflow have the mould of cavity of given thickness and the method for hardening and used paint-on technique or the method for thin slice forming technique etc.
In addition, below the preferred 100 μ m of the thickness deviation of abrasive areas, below the preferred especially 50 μ m.Inequality at thickness surpasses under the situation of 100 μ m, and abrasive areas can become the zone with very big fluctuating, produces and the different part of contact condition of being ground object, thereby just has pair abrasive characteristic to cause dysgenic tendency.In addition, inequality for the thickness of eliminating abrasive areas, in general grinding initial stage make the bonding or welding of electricity consumption the sander of diamond abrasive polished in the surface of abrasive areas, but the polishing time that surpasses the material of described scope can be elongated, thereby production efficiency is reduced.In addition, as the method for the inequality that suppresses thickness, also has the method that the abrasive areas surface of making given thickness is polished.In polishing, the most different abrasive sheet such as handy granularity carries out by stages.
Manufacture method with grinding pad of abrasive areas and transmission region is not particularly limited, and can consider the whole bag of tricks, but will concrete example be described below.And, in the following concrete example,, also can be the grinding pad that resilient coating is not set though narrate for the grinding pad that is provided with resilient coating.
At first, first example is following method as shown in Figure 7, promptly, to fit with two-sided tape 10 with the abrasive areas 9 of given size openings, according in its mode of aliging with the peristome of abrasive areas 9 down, will be with given size openings resilient coating 11 applyings.Then, applying is stained with the two-sided tape 12 from mould paper 13 on resilient coating 11, embedding, applying transmission region 8 on the peristome of abrasive areas 9.
As second concrete example, as shown in Figure 8, be following method, that is, and will be with given size openings abrasive areas 9 fit with two-sided tape 10, at its applying resilient coating 11 down.Thereafter, the mode of aliging according to peristome with abrasive areas 9, with two-sided tape 10 and resilient coating 11 with given size openings.Then, applying is stained with the two-sided tape 12 from mould paper 13 on resilient coating 11, embedding, applying transmission region 8 in the peristome of abrasive areas 9.
As the 3rd concrete example, as shown in Figure 9, be following method, that is, and will be with given size openings abrasive areas 9 fit with two-sided tape 10, at its applying resilient coating 11 down.Then, fitting on the opposite one side of resilient coating 11 is stained with two-sided tape 12 from mould paper 13, thereafter, the mode of aliging according to peristome with abrasive areas 9, from two-sided tape 10 to from mould paper 13 with given size openings.Embedding, applying transmission region 8 in the peristome of abrasive areas 9.And at this moment, because the opposite side of transmission region 8 becomes the state that has been opened wide, dust etc. might retain, therefore the member 14 with its obstruction preferably is installed.
As the 4th concrete example, as shown in figure 10, be following method, that is, be stained with resilient coating 11 from the two-sided tape 12 of mould paper 13 with having fitted with given size openings.Then will be with given size openings abrasive areas 9 fit with two-sided tape 10, they are fitted according to the mode that makes the peristome alignment.After this, embedding, applying transmission region 8 in the peristome of abrasive areas 9.And this moment, dust etc. might retain, therefore the member 14 with its obstruction preferably is installed because the opposite side of abrasive areas becomes the state that has been opened wide.
In the manufacture method of described grinding pad, though the method for openings such as abrasive areas or resilient coating is not particularly limited, for example can enumerates anchor clamps that punching press has cutting power and the method for opening, utilize the method for the laser that uses generations such as carbon dioxide laser and grind the method for cutting etc. with the anchor clamps of lathe tool and so on.And, one of the present invention and the size or the shape of peristome of two abrasive areas be not particularly limited.
Described resilient coating is the part of replenishing the characteristic of abrasive areas (grinding layer).Resilient coating is for the flatness of the relation that realizes being in compromise selection simultaneously and uniformity two aspects and essential part in CMP.So-called flatness is meant the flatness of the drafting department when the small concavo-convex quilt that produces grinds object when lap has the formation pattern, so-called uniformity is meant the homogeneity of being ground object integral body.Utilize the characteristic of grinding layer, flatness is improved, utilize the characteristic of resilient coating, carry out inhomogeneity improvement.In grinding pad of the present invention, resilient coating preferably uses the material more more soft than grinding layer.
Though the formation material of described resilient coating is not particularly limited, for example can enumerates fabric nonwoven cloths such as polyester non-woven fabric, nylon nonwoven fabrics, acrylic acid nonwoven fabrics, flood the rubbery resin such as macromolecule foamed resin, butadiene rubber, isoprene rubber such as resin impregnation nonwoven fabrics, polyurethane foamed material, polyethylene foam material of the polyester non-woven fabric and so on of polyurethane and photoresist etc.
As the method that the grinding layer that will be in the abrasive areas 9 uses and resilient coating 11 are fitted, for example can enumerate abrasive areas and resilient coating method with two-sided tape clamping, punching press.
Two-sided tape is to have the material that is provided with the general formation of adhesive linkage on the two sides of base materials such as nonwoven fabrics or film.When considering to prevent slip when soaking into of resilient coating waited, preferred use film in base material.In addition, as the composition of adhesive linkage, for example can enumerate rubber-like binding agent or acrylic adhesive.When considering the content of metal ion, because abrasive areas and resilient coating are formed and also had differently, therefore also the composition of each adhesive linkage of two-sided tape can be made as difference, the bonding force of each layer is appropriately changed.
As method, can enumerate punching press two-sided tape on resilient coating and bonding method with resilient coating 11 and two-sided tape 12 applyings.
This two-sided tape is same as described above, is to have the material that is provided with the general formation of adhesive linkage on the two sides of base materials such as nonwoven fabrics or film.After the use of considering at grinding pad, during from situation that pressing plate (platen) strips down, if in base material, use film, then because can to eliminate adhesive tape residual etc., therefore preferred.In addition, the composition of adhesive linkage is same as described above.
Described member 14 so long as the member of occlusion of openings portion just be not particularly limited.But must be when grinding, the material that can peel off.
Semiconductor device passes through the operation on the surface of using described grinding pad to come grinding semiconductor chip and makes.In general so-called semiconductor wafer is the wafer of stacked distribution metal and oxide-film on silicon wafer.Ginding process, the lapping device of semiconductor wafer are not particularly limited, for example can be as shown in Figure 1, use possessed the grinding plate 2 that supports grinding pad 1, lapping device that the brace table (rubbing head) 5 of supporting semiconductor wafers 4 and being used to carries out the feed mechanism of polishing material, grinding agent 3 to the homogeneous pressurization of wafer waits and carries out.Grinding pad 1 for example passes through to attach with two-sided tape, and is installed on the grinding plate 2.Grinding plate 2 disposes with the mode that semiconductor wafer 4 is faced mutually with the grinding pad 1 that brace table 5 is supported according to making separately, possesses rotating shaft 6,7 on separately.In addition, in brace table 5 sides, be provided with and be used for the pressing mechanism of semiconductor wafer 4 to grinding pad 1 pushing.When grinding, when making grinding plate 2 and brace table 5 rotations, semiconductor wafer 4 to grinding pad 1 pushing, is ground when supplying with slip.The flow of slip, grinding load, grinding plate rotating speed and wafer rotation all are not particularly limited, and suitably adjust and carry out.
So just the outstanding part on the surface of semiconductor wafer 4 can be removed and grind to form flat condition.By carry out stamping-out, welding, plug-in unit wait make semiconductor device thereafter.Semiconductor device is used to arithmetic processing apparatus or memory etc.
Embodiment
Below will to one of concrete expression the present invention～three the formation and the embodiment of effect etc. describe.And the assessment item among the embodiment etc. is measured as followsly.
(determination of light transmittance of one of invention)
The transmission region member of made is cut out 2cm * 6cm (thickness: size arbitrarily) and as the determination of light transmittance sample.Use spectrophotometer (Hitachi's system, U-3210 SpectroPhotometer), in measuring wavelength region may 300～700nm, measure.The measurement result of these light transmittances is used the Lambert-Beer rule, be scaled the light transmittance of thickness 1mm.
(invention two determination of light transmittance)
The transmission region member of made is cut out 2cm * 6cm (thickness: size 1.25mm) and as the determination of light transmittance sample.Use spectrophotometer (Hitachi's system, U-3210 SpectroPhotometer), in measuring wavelength region may 600～700nm, measure.The measurement result of these light transmittances is used the Lambert-Beer rule, be scaled the light transmittance of thickness 1mm.
(mean air bubble diameter mensuration)
To be as thin as possible to about thickness 1mm the parallel abrasive areas that cuts out with slicer and measure sample as mean air bubble diameter.Sample is fixed on the slide, uses image processing apparatus (Japan's textile company system, Image Analyzer V10), measure the full bubble diameter of 0.2mm * 0.2mm scope arbitrarily, calculated mean air bubble diameter.
(gravity test)
Standard according to JIS Z8807-1976 is carried out.The abrasive areas that will cut out with the rectangle (thickness: any) of 4cm * 8.5cm left standstill 16 hours under the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5% as the gravity test sample.In mensuration, use densimeter (Zultrius corporate system), measured proportion.
(ASKER D hardness mensuration)
Standard according to JIS K6253-1997 is carried out.The abrasive areas that will cut out with the size of 2cm * 2cm (thickness: any) is measured as hardness and is used sample, leaves standstill 16 hours under the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5%.In mensuration, sample is overlapped, make thickness more than 6mm.Use hardometer (macromolecule metrical instrument corporate system, ASKER D type hardness tester meter), measured hardness.
(compression ratio and compressive recovery rate are measured)
The abrasive areas (grinding layer) that will cut out with the circle (thickness: any) of diameter 7mm is used sample as compression ratio and compressive recovery rate mensuration, leaves standstill 40 hours under the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5%.In mensuration, use hot assay determination instrument TMA (SEIKOINTRUMENTS system, SS6000), measured compression ratio and compressive recovery rate.In addition, the calculating formula with compression ratio and compressive recovery rate is expressed as follows.
Compression ratio (%)=(T1-T2)/T1} * 100
T1: grinding layer is begun the (300g/cm with 30KPa from no load state
2) the load of the stress grinding layer thickness when keeping for 60 seconds
T2: begin (1800g/cm with 180KPa from the state of T1
2) the load of the stress grinding layer thickness when keeping for 60 seconds
Compressive recovery rate (%)={ (T3-T2)/(T1-T2) } * 100
T1: grinding layer is begun the (300g/cm with 30KPa from no load state
2) the load of the stress grinding layer thickness when keeping for 60 seconds
T2: begin (1800g/cm with 180KPa from the state of T1
2) the load of the stress grinding layer thickness when keeping for 60 seconds
T3: begin under no load state, to keep for 60 seconds from the state of T2, thereafter, with 30KPa (300g/cm
2) the load of the stress grinding layer thickness when keeping for 60 seconds
(storage elastic modulus detection)
Standard according to JIS K7198-1991 is carried out.The abrasive areas that will cut out with the rectangle (thickness: any) of 3mm * 40mm, left standstill 4 days in the container of silica gel of having packed under 23 ℃ environment as the Measurement of Dynamic Viscoelasticity sample.The correct width of each thin slice after cutting out and the instrumentation of thickness carry out with micrometer.In mensuration, use dynamic viscoelastic spectrometer (this making of rock is made, and existing IS skill is ground), measured the storage elastic modulus E '.The condition determination of this moment is expressed as follows.
＜condition determination 〉
Measure temperature: 40 ℃
Apply distortion: 0.03%
Initial stage load: 20g
Frequency: 1Hz
(thickness of one of invention detects and estimates)
The optical detection evaluation of the thickness of wafer utilizes following method to carry out.As wafer, use the wafer of the heat oxide film of on 8 inches silicon wafer, having made 1 μ m,, be provided with the transmission region member of thickness 1.27mm thereon.Use interfere type determining film thickness device (Da mound electronics corporation system), in wavelength region may 400～800nm, carried out determining film thickness for several times.Carry out the situation of the peak and valley of the thickness result that calculated and the interference light under each wavelength and confirm, carried out thickness with following benchmark and detected evaluation.
◎: thickness is reproduced to be measured very well.
Zero: thickness is reproduced to be measured well.
*: reproducibility is poor, the accuracy of detection deficiency.
(two thickness of invention detects and estimates)
The optical detection evaluation of the thickness of wafer utilizes following method to carry out.As wafer, use the wafer of the heat oxide film of on 8 inches silicon wafer, having made 1 μ m,, be provided with the transmission region member of thickness 1.25mm thereon.Use utilizes the interfere type determining film thickness device of He-Ne laser, has carried out determining film thickness for several times in wavelength region may 633nm.Carry out the situation of the peak and valley of the thickness result that calculated and interference light and confirm, carried out thickness with following benchmark and detected evaluation.
Zero: thickness is reproduced to be measured well.
*: reproducibility is poor, the accuracy of detection deficiency.
(three thickness of invention detects and estimates)
The optical detection evaluation of the thickness of wafer utilizes following method to carry out.As wafer, use the wafer of the heat oxide film of on 8 inches silicon wafer, having made 1 μ m.Use interfere type determining film thickness device (Da mound electronics corporation system), with 3mm at interval to the determining film thickness on the line at the slot-open-section that connects this wafer and center 33 points, with its mean value as average film thickness (1).Then, the mode that the transmission region of the grinding pad of embodiment and comparative example is positioned on the described line is placed on respectively on the wafer, similarly uses interfere type determining film thickness device, with 3mm measuring space thickness, with its mean value as average film thickness (2).After this, relatively average film thickness (1) and average film thickness (2) have carried out thickness with following benchmark and have detected evaluation.
Zero: thickness is reproduced to be measured very well.
△: thickness is reproduced to a certain extent to be measured well.
*: reproducibility is poor, the accuracy of detection deficiency.
(assay method of the thickness deviation of transmission region)
Use micrometer (Mitutoyo corporate system), along the center line of the long side direction of the transmission region of manufacturing with the 5mm measuring space thickness.With the difference of the maximum of each measured value and minimum value as the thickness deviation.
(evaluation of abrasive characteristic)
Use SPP600S (ridge this work mechanism corporate system) as lapping device, use the grinding pad of made, carried out the evaluation of abrasive characteristic.Grinding rate is to have made the about 0.5 μ m of wafer grinding of the heat oxide film of 1 μ m on 8 inches silicon wafer, according to this moment time calculate.In the determining film thickness of oxide-film, used interfere type determining film thickness device (Da mound electronics corporation system).As grinding condition, silica slip (SS12, KYABOT corporate system) is added with flow 150ml/min in grinding as slip.As grinding load, be made as 350g/cm
2The grinding plate rotating speed is 35rpm, and wafer rotation is 30rpm.
In the evaluation of planarization characteristics, after having piled up the heat oxide film of 0.5 μ m on 8 inches silicon wafers, carry out specific pattern and handle, pile up the oxide-film of 1 μ m with p-TEOS, having made the initial stage ladder is the wafer that has pattern of 0.5 μ m.This wafer is ground under the described conditions, after the grinding, measure each ladder, estimated planarization characteristics.2 ladders have been measured as planarization characteristics.One is local ladder, this be the line of width 270 μ m with the ladder in the spaced pattern of 30 μ m, measured the ladder after a minute.Another is a cutting output, in the line of the width 270 μ m spaced pattern of line with 270 μ m with the spaced pattern of 30 μ m and width 30 μ m, the ladder of having measured the line top of described 2 kinds of patterns reaches the cutting output at the interval of the 270 μ ms of 2000 when following.When the numerical value of local ladder is low, then can demonstrate with respect to rely on the concavo-convex of the oxide-film that produces because of the pattern on the wafer, it is very fast to reach smooth speed in certain time.In addition, when at interval cutting output more after a little while, do not want that then the cutting output of the part of cutting is less, show that flatness is higher.
Internal homogeneity is to utilize following formula to calculate by any determining film thickness value of wafer at 25.And the value of internal homogeneity is more little, represents that then the homogeneity of wafer surface is high more.
Internal homogeneity (%)=(thickness maximum-thickness minimum value)/(thickness maximum+thickness minimum value)
One of＜the present invention 〉
[making of transmission region]
Production Example 1
PEPA (number-average molecular weight 2440) 125 weight portions and 1 that to be made by adipic acid and hexylene glycol, 4-butanediol 31 weight portions mix, temperature adjustment to 70 ℃.In this mixed liquor, add 4 of temperature adjustment to 70 in advance ℃, 4 '-methyl diphenylene diisocyanate, 100 weight portions stirred about 1 minute.After this, this mixed liquor is injected the container that is incubated at 100 ℃, under 100 ℃, carry out 8 hours back curing, made polyurethane resin.Use the polyurethane resin of made, made transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with injection moulding.The light transmittance and the rate of change of the transmission region of made are illustrated in the table 1.
Production Example 2
Except in Production Example 1, become PEPA (number-average molecular weight 1920) 77 weight portions of making by adipic acid and hexylene glycol and 1, beyond 4-butanediol 32 weight portions, utilize the method identical, made transmission region (indulging 57mm, horizontal 19mm, thick 1.25mm) with Production Example 1.The light transmittance and the rate of change of the transmission region of made are illustrated in the table 1.
Production Example 3
Except in Production Example 1, become polytetramethylene glycol (number-average molecular weight 890) 114 weight portions and 1 as polyalcohol, the 4-butanediol becomes beyond 24 weight portions, utilizes the method identical with Production Example 1, has made transmission region (indulging 57mm, horizontal 19mm, thick 1.25mm).The light transmittance and the rate of change of the transmission region of made are illustrated in the table 1.
Production Example 4
The terminal prepolymer of isocyanates of metering temperature adjustment to 70 ℃ in decompression jar (the UNIROYAL corporate system, L-325, the NCO containing ratio: 100 weight portions 9.15 weight %), utilize decompression (approximately 10Torr) to make gas deaeration remaining in the prepolymer.In the described prepolymer after deaeration, be added on 120 ℃ of 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACU AMINE MT), 26 weight portions of dissolving down, use mixing agitator (KYENCE corporate system) to mix.After this, this mixture is injected mould, in 110 ℃ baking oven, carry out 8 hours back curing, made transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).The light transmittance and the rate of change of the transmission region of made are illustrated in the table 1.
[making of abrasive areas]
In the reaction vessel that has applied fluorine, with polyethers prepolymer (the UNIROYAL corporate system of having filtered, ADIPRENE L-325, NCO concentration: 2.22meq/g) 100 weight portions and silicon class non-ionic surface active agent (the TOREYDOWSILICON corporate system of having filtered, SH192) 3 weight portions mix, and temperature is adjusted into 80 ℃.Use has applied the agitator of fluorine, has carried out about 4 minutes high degree of agitation with rotating speed 900rpm, makes to add bubble in reaction system.To wherein add in advance 120 ℃ of following fusions and filtered 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACUAMINE MT), 26 weight portions., continue about 1 minute stirring, reaction solution is flowed in the baking oven mould of the dish-type that has applied fluorine thereafter.Put into baking oven in the moment that the flowability of this reaction solution disappears, under 110 ℃, carry out 6 hours back curing, obtained polyurethane resin foaming body bulk.Use the slicing machine (FECKEN corporate system) of band saw type to cut into slices this polyurethane resin foaming body bulk, obtained polyurethane resin foaming body thin slice.Use sanding machine (AMITECH corporate system) then, this thin slice is carried out surface grinding with given thickness, formed the thin slice (sheet thickness: 1.27mm) of having adjusted thickness and precision.To carry out the thin slice stamping-out that this polishing handles is given diameter (61cm), use groove processing machine (eastern nation steel machine corporate system), has carried out the groove processing of the concentric circles of groove width 0.25mm, separation 1.50mm, groove depth 0.40mm from the teeth outwards.On the face of the opposite side with the groove machined surface of this thin slice, use laminating machine, paste two-sided tape (ponding chemical industrial company system, Doubletuck tape), thereafter, hole (the thickness 1.27mm that is used to embed transmission region at this given position stamping-out that has carried out the thin slice of groove processing, 57.5mm * 19.5mm), made the abrasive areas that has two-sided tape.Each rerum natura of the abrasive areas of made is: mean air bubble diameter 45 μ m, proportion 0.86g/cm
3, ASKER D hardness 53 degree, compression ratio 1.0%, compressive recovery rate 65.0%, storage modulus of elasticity 275MPa.
[making of grinding pad]
Will by the polyethylene foam material that the surface has been carried out polishing, corona treatment (the TOREY corporate system, TOREPEF, thickness: the resilient coating of 0.8mm) making, use laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape of making previously.In addition, at the buffer-layer surface two-sided tape of having fitted.In order the to embed transmission region hole part of stamping-out of abrasive areas in the middle of with the big or small stamping-out resilient coating of 51mm * 13mm, hole run through thereafter., embed the transmission region of in Production Example 1 made, made grinding pad thereafter.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 1.
Use the transmission region of made in the Production Example 2, utilize the method identical to make grinding pad with embodiment 1.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 1.
Embodiment 3
Use the transmission region of made in the Production Example 3, utilize the method identical to make grinding pad with embodiment 1.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 1.
Use the transmission region of made in the Production Example 4, utilize the method identical to make grinding pad with embodiment 1.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 1.
Table 1
| Light transmittance %) | Maximum transmission rate (%) | Minimum light transmittance (%) | Rate of change (%) | Grinding rate (/min) | Local ladder () | Cutting output () | Thickness detects | ||||
| ?400nm | ?500nm | ?600nm | ? | ||||||||
| Embodiment | |||||||||||
| 1 | ?71.5 | ?96.5 | ?96.9 | ?95.5 | ?97.1 | ?71.5 | ?26.4 | ?2300 | ?20 | ?2900 | ◎ |
| |
?77.9 | ?95.0 | ?94.8 | ?93.3 | ?95.1 | ?77.9 | ?18.1 | ?2400 | ?10 | ?3000 | ◎ |
| Embodiment 3 | ?51.4 | ?96.4 | ?96.8 | ?95.3 | ?97.2 | ?51.4 | ?47.1 | ?2300 | ?20 | ?3000 | ○ |
| |
?14.7 | ?85.4 | ?92.9 | ?93.9 | ?94.1 | ?14.7 | ?84.4 | ?2350 | ?20 | ?2950 | × |
Can find that from table 1 light transmittance of the transmission region in wavelength 400～700nm is (embodiment 1～3) under the situation more than 50%, the end point determination of wafer can reproducibility realize well, and can abrasive characteristic do not impacted.
＜the present invention two
[making of transmission region]
Production Example 5
The terminal prepolymer of isocyanates of metering temperature adjustment to 70 ℃ in decompression jar (the UNIROYAL corporate system, L-325, the NCO containing ratio: 150 weight portions 9.15 weight %), utilize decompression (approximately 10Torr) to make gas deaeration remaining in the prepolymer.In the described prepolymer after deaeration, be added on 120 ℃ of 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACUAMINE MT), 39 weight portions of dissolving down, use rotation revolution formula blender (SHIKY corporate system), stirred 3 minutes with rotating speed 800rpm.After this, make this mixture flow into mould, in 110 ℃ baking oven, carry out 8 hours back curing, made the transmission region member.After this, from the transmission region member, cut out transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).The light transmittance of the transmission region of made is illustrated in the table 2.
Production Example 6
With toluene di-isocyanate(TDI) (2,4-body/2, the mixture of 6-body=80/20) 1000 weight portions, 4,4 '-dicyclohexyl methyl hydride diisocyanate, 168 weight portions, polytetramethylene glycol (number-average molecular weight: 1012) 1678 weight portions and 1,4-butanediol 150 weight portions mix, under 80 ℃, add thermal agitation 150 minutes, and modulated the terminal prepolymer (isocyanate equivalent: 2.20meq/g) of isocyanates.These prepolymer 100 weight portions of metering in the decompression jar utilize decompression (approximately 10Torr) to make gas deaeration remaining in the prepolymer.In the described prepolymer after deaeration, be added on 120 ℃ of described 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) 29 weight portions of dissolving down, use rotation revolution formula blender (SHIKY corporate system), stirred 3 minutes with rotating speed 800rpm.After this, make this mixture flow into mould, in 110 ℃ baking oven, carry out 8 hours back curing, made the transmission region member.After this, from the transmission region member, cut out transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).Carrying out after the visualization bubble complete obiteration in this transmission region.The light transmittance of the transmission region of made is illustrated in the table 2.
Production Example 7
PEPA (number-average molecular weight 2440) 120 weight portions and 1 that to be made by adipic acid and hexylene glycol, 4-butanediol 30 weight portions mix, temperature adjustment to 70 ℃.In this mixed liquor, add 4 of temperature adjustment to 70 in advance ℃, 4 '-methyl diphenylene diisocyanate, 100 weight portions use mixing agitator (KYENCE corporate system), stir about 1 minute with rotating speed 500rpm.After this, this mixed liquor is injected the container that is incubated at 100 ℃, under 100 ℃, carry out 8 hours back curing, made polyurethane resin.Use the polyurethane resin of made, made the transmission region member with injection moulding.After this, from the transmission region member, cut out transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).Carrying out after the visualization, what also contain bubble in this transmission region.The light transmittance of the transmission region of made is illustrated in the table 2.
[making of abrasive areas]
In the reaction vessel that has applied fluorine, with polyethers prepolymer (the UNIROYAL corporate system of having filtered, ADIPRENE L-325, NCO concentration: 2.22meq/g) 100 weight portions and silicon class non-ionic surface active agent (the TOREYDOWSILICON corporate system of having filtered, SH192) 3 weight portions mix, and temperature is adjusted into 80 ℃.Use has applied the agitator of fluorine, has carried out about 4 minutes high degree of agitation with rotating speed 900rpm, makes to add bubble in reaction system.To wherein add in advance 120 ℃ of following fusions and filtered 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACU AMINE MT), 26 weight portions., continue about 1 minute stirring, reaction solution is flowed in the baking oven mould of the dish-type that has applied fluorine thereafter.Put into baking oven in the moment that the flowability of this reaction solution disappears, under 110 ℃, carry out 6 hours back curing, obtained polyurethane resin foaming body bulk.Use the slicing machine (FECKEN corporate system) of band saw type to cut into slices this polyurethane resin foaming body bulk, obtained polyurethane resin foaming body thin slice.Use sanding machine (AMITECH corporate system) then, this thin slice is carried out surface grinding with given thickness, formed the thin slice (sheet thickness: 1.27mm) of having adjusted thickness and precision.To carry out the thin slice stamping-out that this polishing handles is given diameter (61cm), use groove processing machine (eastern nation steel machine corporate system), has carried out the groove processing of the concentric circles of groove width 0.25mm, separation 1.50mm, groove depth 0.40mm from the teeth outwards.On the face of the opposite side with the groove machined surface of this thin slice, use laminating machine, paste two-sided tape (ponding chemical industrial company system, Doubletuck tape), thereafter, hole (the thickness 1.27mm that is used to embed transmission region at this given position stamping-out that has carried out the thin slice of groove processing, 57.5mm * 19.5mm), made the abrasive areas that has two-sided tape.Each rerum natura of the abrasive areas of made is: mean air bubble diameter 45 μ m, proportion 0.86g/cm
3, ASKER D hardness 53 degree, compression ratio 1.0%, compressive recovery rate 65.0%, storage modulus of elasticity 275MPa.
[making of grinding pad]
Will by the polyethylene foam material that the surface has been carried out polishing, corona treatment (the TOREY corporate system, TOREPEF, thickness: the resilient coating of 0.8mm) making, use laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape of making previously.In addition, at the buffer-layer surface two-sided tape of having fitted.Thereafter, in the middle of the hole part of stamping-out in order to embed transmission region of abrasive areas, the big or small stamping-out resilient coating with 51mm * 13mm runs through hole., embed the transmission region of in Production Example 5 made, made grinding pad thereafter.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 2.
Use the transmission region of made in the Production Example 6, utilize the method identical to make grinding pad with embodiment 4.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 2.
Comparative example 2
Use the transmission region of made in the Production Example 7, utilize the method identical to make grinding pad with embodiment 4.Abrasive characteristic of the grinding pad of made etc. is illustrated in the table 2.
Table 2
| Light transmittance (%) | Grinding rate (/min) | Local ladder () | Interval cutting output () | Thickness detects | |||
| 600nm | ?650nm | ? | |||||
| Embodiment | |||||||
| 4 | ?92.9 | ?93.1 | ?93.9 | ?2250 | ?15 | ?2900 | ?○ |
| |
?92.5 | ?92.7 | ?93.1 | ?2200 | ?20 | ?3000 | ?○ |
| Comparative example 2 | ?74.5 | ?75.1 | ?75.4 | ?2300 | ?60 | ?2950 | × |
Can find that from table 2 light transmittance of the transmission region in wavelength 600～700nm is (embodiment 4,5) under the situation more than 80%, the end point determination of wafer can reproducibility realize well, and can not impact abrasive characteristic.
＜the present invention three
[making of transmission region]
Production Example 8
The terminal prepolymer of isocyanates of metering temperature adjustment to 70 ℃ in decompression jar (the UNIROYAL corporate system, L-325, the NCO containing ratio: 50 weight portions 9.15 weight %), utilize decompression (approximately 10Torr) to make gas deaeration remaining in the prepolymer.In the described prepolymer after deaeration, be added on 120 ℃ of 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACUAMINE MT), 13 weight portions of dissolving down, use mixing agitator (KYENCE corporate system) to stir 1 minute, carried out deaeration.After this, make this mixture flow into mould, in 110 ℃ baking oven, carry out 8 hours back curing, made rectangular transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).The difference of the thickness deviation of this transmission region is 107 μ m.
Production Example 9
Except the shape with transmission region is made as rectangle, beyond vertical 100mm, horizontal 19mm, the thick 1.25mm, utilize the method identical to make transmission region with Production Example 8.
Production Example 10
Made transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with the method identical with Production Example 8.After this, use the sand paper of 240 grain size number that transmission region is polished.Thereafter, poor at the thickness deviation of having measured this transmission region, the result is 45 μ m.
Production Example 11
Made transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with the method identical with Production Example 8.After this, use the sand paper of 240 grain size number that transmission region is polished, use the sand paper of 800 grain size number similarly to polish then.Thereafter, poor at the thickness deviation of having measured this transmission region, the result is 28 μ m.
Production Example 12
Except the shape with transmission region is made as the circle of diameter 30mm, utilize the method identical to make transmission region with Production Example 8.
Production Example 13
Except the shape with transmission region is made as rectangle, beyond vertical 50.8mm, horizontal 20.3mm, the thick 1.25mm, utilize the method identical to make transmission region with Production Example 8.
[making of abrasive areas]
In the reaction vessel that has applied fluorine, with polyethers prepolymer (the UNIROYAL corporate system of having filtered, ADIPRENE L-325, NCO concentration: 2.22meq/g) 1000 weight portions and silicon class non-ionic surface active agent (the TOREYDOWSILICON corporate system of having filtered, SH192) 30 weight portions mix, and temperature is adjusted into 80 ℃.Use has applied the agitator of fluorine, has carried out about 4 minutes high degree of agitation with rotating speed 900rpm, makes to add bubble in reaction system.To wherein add in advance 120 ℃ of following fusions and filtered 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACU AMINE MT), 260 weight portions., continue about 1 minute stirring, reaction solution is flowed in the baking oven mould of the dish-type that has applied fluorine thereafter.Put into baking oven in the moment that the flowability of this reaction solution disappears, under 110 ℃, carry out 6 hours back curing, obtained polyurethane resin foaming body bulk.Use the slicing machine (FECKEN corporate system) of band saw type to cut into slices this polyurethane resin foaming body bulk, obtained polyurethane resin foaming body thin slice.Use sanding machine (AMITECH corporate system) then, this thin slice is carried out surface grinding with given thickness, formed the thin slice (sheet thickness: 1.27mm) of having adjusted thickness and precision.To carry out the thin slice stamping-out that this polishing handles is given diameter (61cm), use groove processing machine (eastern nation steel machine corporate system), has carried out the groove processing of the concentric circles of groove width 0.25mm, separation 1.50mm, groove depth 0.40mm from the teeth outwards.On the face of the opposite side with the groove machined surface of this thin slice, use laminating machine, paste two-sided tape (ponding chemical industrial company system, Doubletuck tape), thereafter, made the abrasive areas that has two-sided tape.Each rerum natura of abrasive areas is: mean air bubble diameter 50 μ m, proportion 0.86g/cm
3, ASKER D hardness 52 degree, compression ratio 1.1%, compressive recovery rate 65.0%, storage modulus of elasticity 260MPa.
[making of grinding pad]
Between the central part and all ends of the described abrasive areas that has a two-sided tape, stamping-out is used to embed hole (rectangle, D (diametric(al))=57.5mm, the L (circumferencial direction)=19.5mm) of transmission region.After this, will (thickness: the resilient coating of 0.8mm) making uses laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape for TOREY corporate system, TOREPEF by the polyethylene foam material that the surface has been carried out polishing, corona treatment.In addition at the buffer-layer surface two-sided tape of having fitted.Thereafter, in the middle of the hole part of stamping-out in order to embed transmission region of abrasive areas, the big or small stamping-out resilient coating with D (diametric(al))=51mm, L (circumferencial direction)=13mm runs through hole., embed the transmission region of in Production Example 8 made, made grinding pad as shown in Figure 4 thereafter.And the diametric length (D) of transmission region is 3 times of length (L) of circumferencial direction.In addition, the diametric length (D) of transmission region is 0.28 times with respect to conduct by the diameter of the wafer of abrasive body.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Stamping-out is used to embed hole (rectangle, D (diametric(al))=100.5mm, the L (circumferencial direction)=19.5mm) of transmission region between the central part of the described abrasive areas that has a two-sided tape and all ends.After this, will (thickness: the resilient coating of 0.8mm) making uses laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape for TOREY corporate system, TOREPEF by the polyethylene foam material that the surface has been carried out polishing, corona treatment.In addition at the buffer-layer surface two-sided tape of having fitted.Thereafter, in the middle of the hole part of stamping-out in order to embed transmission region of abrasive areas, the big or small stamping-out resilient coating with D (diametric(al))=94mm, L (circumferencial direction)=13mm runs through hole., embed the transmission region of in Production Example 9 made, made grinding pad as shown in Figure 4 thereafter.And the diametric length (D) of transmission region is 5.3 times of length (L) of circumferencial direction.In addition, the diametric length (D) of transmission region is 0.49 times with respect to conduct by the diameter of the wafer of abrasive body.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Except in embodiment 6, replace the transmission region of made in the Production Example 8, and used beyond the transmission region of made in the Production Example 10, utilize the method identical to make grinding pad with embodiment 6.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Except in embodiment 6, replace the transmission region of made in the Production Example 8, and used beyond the transmission region of made in the Production Example 11, utilize the method identical to make grinding pad with embodiment 6.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Comparative example 3
Stamping-out is used to embed hole (rectangle, D (diametric(al))=19.5mm, the L (circumferencial direction)=57.5mm) of transmission region between the central part of the described abrasive areas that has a two-sided tape and all ends.After this, will by the polyethylene foam material that the surface has been carried out polishing, corona treatment (the TOREY corporate system, TOREPEF, thickness: the resilient coating of 0.8mm) making, use laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape.In addition at the buffer-layer surface two-sided tape of having fitted.Thereafter, in the middle of the hole part of stamping-out in order to embed transmission region of abrasive areas, the big or small stamping-out resilient coating with D (diametric(al))=13mm, L (circumferencial direction)=51mm runs through hole., embed the transmission region of in Production Example 8 made, made grinding pad as shown in figure 11 thereafter.And the diametric length (D) of transmission region is 0.3 times of length (L) of circumferencial direction.In addition, the diametric length (D) of transmission region is 0.09 times with respect to conduct by the diameter of the wafer of abrasive body.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Comparative example 4
Stamping-out is used to embed the hole (circle, diameter 30.5mm) of transmission region between the central part of the described abrasive areas that has a two-sided tape and all ends.After this, will by the polyethylene foam material that the surface has been carried out polishing, corona treatment (the TOREY corporate system, TOREPEF, thickness: the resilient coating of 0.8mm) making, use laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape.In addition at the buffer-layer surface two-sided tape of having fitted.In order the to embed transmission region hole part of stamping-out of abrasive areas in the middle of, with diameter 24mm stamping-out resilient coating, hole run through thereafter., embed the transmission region of in Production Example 12 made, made grinding pad as shown in Figure 3 thereafter.In addition, the length of the diameter of transmission region is 0.15 times with respect to conduct by the diameter of the wafer of abrasive body.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Comparative example 5
Stamping-out is used to embed hole (rectangle, D (diametric(al))=51.3mm, the L (circumferencial direction)=20.8mm) of transmission region between the central part of the described abrasive areas that has a two-sided tape and all ends.After this, will (thickness: the resilient coating of 0.8mm) making uses laminating machine to be fitted on the bonding plane of the abrasive areas that has two-sided tape for TOREY corporate system, TOREPEF by the polyethylene foam material that the surface has been carried out polishing, corona treatment.In addition at the buffer-layer surface two-sided tape of having fitted.Thereafter, in the middle of the hole part of stamping-out in order to embed transmission region of abrasive areas, size (rectangle) the stamping-out resilient coating with D (diametric(al))=44.8mm, L (circumferencial direction)=14.3mm runs through hole., embed the transmission region of in Production Example 13 made, made grinding pad as shown in Figure 4 thereafter.And the diametric length (D) of transmission region is 2.5 times of length (L) of circumferencial direction.In addition, the diametric length (D) of transmission region is 0.25 times with respect to conduct by the diameter of the wafer of abrasive body.The abrasive characteristic of the grinding pad of made is illustrated in the table 3.
Table 3
| Grinding rate (/min) | Internal homogeneity (%) | Thickness detects | |
| |
?2450 | ?7 | ○ |
| |
?2350 | ?5 | ○ |
| |
?2450 | ?5 | ○ |
| |
?2450 | ?4 | ○ |
| Comparative example 3 | ?2330 | ?13 | × |
| Comparative example 4 | ?2400 | ?11 | × |
| Comparative example 5 | ?2430 | ?8.5 | △ |
From table 3, can find, at transmission region for comparing diametric length (D) (embodiment 6～9) under the situation of the shape more than 3 times with the length (L) of the circumferencial direction of grinding pad, because in the grinding of wafer, transmission region can only not concentrated certain part of contact wafer, and contact wafer is comprehensive equably, therefore just wafer can be ground equably, abrasive characteristic (particularly internal homogeneity) is good.In addition, by reducing the thickness deviation of transmission region, can improve internal homogeneity (embodiment 8 and 9).
The industrial possibility of utilizing
Grinding pad of the present invention can be in chemically mechanical polishing (CMP) uses during with the concavo-convex planarization of wafer surface. Specifically, relate to and have the grinding pad that detects the window of polishing progress etc. be used to the mechanism that utilizes optics.
Claims (16)
1. a grinding pad is an employed grinding pad with abrasive areas and transmission region in chemico-mechanical polishing, it is characterized in that, and the light transmittance in the wavelength 400～700nm of transmission region region-wide, more than 50%, and
The rate of change of the light transmittance of representing with following formula in the wavelength 400～700nm of transmission region, below 50%,
Rate of change (%)={ the maximum transmission rate among (the minimum light transmittance among the maximum transmission rate-400～700nm among 400～700nm)/400～700nm } * 100.
2. grinding pad according to claim 1 is characterized in that, the light transmittance in the wavelength 400nm of transmission region, and more than 50%, and the light transmittance in wavelength 500～700nm region-wide, more than 90%.
3. grinding pad according to claim 1 is characterized in that, each light transmittance is poor in the wavelength 500～700nm of transmission region, in 5%.
4. grinding pad according to claim 1 is characterized in that, the formation material of abrasive areas and transmission region is a polyurethane resin.
5. grinding pad according to claim 4, it is characterized in that, as the polyurethane resin of the formation material of abrasive areas with as the polyurethane resin of the formation material of transmission region, be to contain the material that organic isocyanate of the same race, polyalcohol and chain elongation agent form.
6. grinding pad according to claim 1 is characterized in that, the formation material of transmission region is non-foaming body.
7. grinding pad according to claim 1 is characterized in that, does not have the sag and swell of maintenance renewal lapping liquid in the side surfaces of transmission region.
8. grinding pad according to claim 1 is characterized in that, the formation material of abrasive areas is fine foaming body.
9. grinding pad according to claim 1 is characterized in that, is provided with groove in the side surfaces of abrasive areas.
10. grinding pad according to claim 8 is characterized in that, the mean air bubble diameter of fine foaming body is below the 70 μ m.
11. grinding pad according to claim 8 is characterized in that, the proportion of fine foaming body is 0.5～1.0g/cm
3
12. grinding pad according to claim 8 is characterized in that, the hardness of fine foaming body is shown 45～65 degree with ASKER D scale of hardness.
13. grinding pad according to claim 8 is characterized in that, the compression ratio of fine foaming body is 0.5～5.0%.
14. grinding pad according to claim 8 is characterized in that, the compressive recovery rate of fine foaming body is 50～100%.
15. grinding pad according to claim 8 is characterized in that, the storage modulus of elasticity under 40 ℃ of fine foaming body, 1Hz is more than the 200MPa.
16. the manufacture method of a semiconductor device, comprise the grinding step that uses grinding pad to come the surface of grinding semiconductor chip, at described grinding step, use possesses the grinding plate that supports grinding pad, the brace table of supporting semiconductor wafers, the lapping device that is used to carry out the lining material of semiconductor wafer homogeneous pressurization and supplies with the feed mechanism of grinding agent, grinding plate disposes with the mode that brace table is faced mutually according to grinding pad that makes each self-supporting and polished semiconductor wafer, make the rotation of described grinding plate and brace table and described semiconductor wafer pushed to grinding pad, when supplying with grinding agent, any described grinding pad comes the surface of grinding semiconductor chip in the use claim 1～15.
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| JP2002343199 | 2002-11-27 | ||
| JP343199/2002 | 2002-11-27 | ||
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| JP029477/2003 | 2003-02-06 | ||
| JP064653/2003 | 2003-03-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106863104A (en) * | 2015-10-01 | 2017-06-20 | 株式会社荏原制作所 | Lapping device |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007307639A (en) * | 2006-05-17 | 2007-11-29 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| JP4931133B2 (en) * | 2007-03-15 | 2012-05-16 | 東洋ゴム工業株式会社 | Polishing pad |
| US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
| KR101587226B1 (en) | 2008-07-31 | 2016-01-20 | 신에쯔 한도타이 가부시키가이샤 | Wafer polishing method and double side polishing apparatus |
| CN102441839B (en) * | 2011-11-11 | 2014-06-04 | 上海华力微电子有限公司 | Method for improving CMP (chemical mechanical polishing) process stability of polishing materials on polishing pad |
| JP2014113644A (en) * | 2012-12-06 | 2014-06-26 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| US9776300B2 (en) * | 2015-06-26 | 2017-10-03 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Chemical mechanical polishing pad and method of making same |
| CN107932334A (en) * | 2016-10-12 | 2018-04-20 | 石嘴山市林昱机械科技有限公司 | Polishing machine operation polishing scratch is smeared surface abrasion cancellation element |
| CN110576386B (en) * | 2018-06-26 | 2021-10-12 | 蓝思精密(东莞)有限公司 | Processing method of fingerprint ring |
| CN113330336B (en) * | 2019-02-18 | 2024-02-20 | 三井化学株式会社 | Optical member, method for manufacturing optical member, and optical information transmission device |
| CN110715910A (en) * | 2019-10-29 | 2020-01-21 | 马鞍山思哲知识产权服务有限公司 | Soft board printing opacity qualification rate detection device |
| CN114227530B (en) * | 2021-12-10 | 2022-05-10 | 湖北鼎汇微电子材料有限公司 | Polishing pad and method for manufacturing semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287158A (en) * | 1999-03-31 | 2001-10-16 | Nikon Corp | Polishing member, polishing machine, adjusting method, measuring method, semiconductor device manufacturing method, and semiconductor device |
| JP2002001647A (en) * | 2000-06-19 | 2002-01-08 | Rodel Nitta Co | Polishing pad |
| JP2003048151A (en) * | 2001-08-08 | 2003-02-18 | Rodel Nitta Co | Polishing pad |
-
2003
- 2003-11-27 CN CNB2003801041028A patent/CN100349267C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287158A (en) * | 1999-03-31 | 2001-10-16 | Nikon Corp | Polishing member, polishing machine, adjusting method, measuring method, semiconductor device manufacturing method, and semiconductor device |
| JP2002001647A (en) * | 2000-06-19 | 2002-01-08 | Rodel Nitta Co | Polishing pad |
| JP2003048151A (en) * | 2001-08-08 | 2003-02-18 | Rodel Nitta Co | Polishing pad |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106863104A (en) * | 2015-10-01 | 2017-06-20 | 株式会社荏原制作所 | Lapping device |
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| CN1717785A (en) | 2006-01-04 |
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