CN109454547A - A kind of system and method for CMP pad service life on-line checking - Google Patents

A kind of system and method for CMP pad service life on-line checking Download PDF

Info

Publication number
CN109454547A
CN109454547A CN201811612877.0A CN201811612877A CN109454547A CN 109454547 A CN109454547 A CN 109454547A CN 201811612877 A CN201811612877 A CN 201811612877A CN 109454547 A CN109454547 A CN 109454547A
Authority
CN
China
Prior art keywords
polishing
pad
polishing pad
cmp
working time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811612877.0A
Other languages
Chinese (zh)
Inventor
顾海洋
王东辉
张志军
古枫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Sizone Electronic Technology Inc
Original Assignee
Hangzhou Sizone Electronic Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Sizone Electronic Technology Inc filed Critical Hangzhou Sizone Electronic Technology Inc
Priority to CN201811612877.0A priority Critical patent/CN109454547A/en
Publication of CN109454547A publication Critical patent/CN109454547A/en
Priority to CN201910441353.8A priority patent/CN110026885A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/0053Control means for lapping machines or devices detecting loss or breakage of a workpiece during lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Abstract

The present invention relates to a kind of system and method for CMP pad service life on-line checking, the polishing pad of with groove is arranged in the surface of polishing block and rotates with polishing block;Wafer is pressed in pad interface to rubbing head and opposite polishing block moves, and carries out planarization process to wafer: being equipped with light source and optical detector on the component of corresponding polishing area, source emissioning light beam to pad interface simultaneously reflexes to optical detector;Controller receives the signal from optical detector online, calculates trench depth according to signal strength or weakness, judges the remaining working time of polishing pad.The CMP process parameter on-line tuning method based on polishing pad life tests that the present invention also provides a kind of, according to the remaining working time of polishing pad, on-line tuning CMP process parameter, such as planarize the time, polishing block revolving speed, rubbing head revolving speed, rubbing head pressure, polishing flow quantity, polishing disk temperature can control the factor of wafer planarization removal efficiency, to promote the planarization efficiency and planarization quality of wafer.

Description

A kind of system and method for CMP pad service life on-line checking
Technical field
The present invention relates to the system and method for polishing pad life on-line checking, especially a kind of to be used for CMP pad The system and method for service life on-line checking.
Background technique
Chemical mechanical grinding is also known as chemical-mechanical planarization (Chemical Mechanical Planarization, CMP) or chemically mechanical polishing (Chemical Mechanical Polishing, CMP), being can The technology of global and local planarization is realized to semiconductor element (such as wafer).
It include polishing block in CMP tool, the polishing block surface is provided with polishing pad;It is provided with above the polishing block Rubbing head clamps wafer to be processed, and applies the surface that wafer is pressed on polishing pad by certain pressure;The throwing Shaven head and polishing block relative movement or relative rotation, while the polishing fluid being made of abrasive grain and chemical solution is in wafer and polishing pad Between flow, so that crystal column surface is realized planarization under chemistry and mechanical collective effect.It is additionally provided with above the polishing block Head is modified, pad interface is modified by the diamond disk on finishing head;The finishing head drives diamond disk rotation, Under be pressed on polishing pad and mobile to set track, to improve the roughness of pad interface, remove and produced in planarization process Raw by-product.
The pad interface is equipped with multiple grooves, and polishing fluid is distributed in polishing layer surface by the groove.With flat The progress of smooth chemical industry skill, polishing pad can gradually thinning consumption.Therefore, polishing pad is a kind of consumptive material, and the service life is (when residue work Between) it is a very important factor.The surfacing aeration of new polishing pad is good, and the polishing fluid that can preferably circulate is to increase crystalline substance The chemical reaction degree of circular surfaces material promotes wafer planarization efficiency.With the use of polishing pad, pad interface material quilt Abrasion, permeability is deteriorated, so that the deterioration of efficiency of wafer planarization, can be changed certain planarization parameters at this time to promote wafer Planarization efficiency.When polishing pad is using after a certain period of time, the planarization efficiency of wafer becomes excessively poor, at this time, it may be necessary to replace old Polishing pad change new polishing pad, thus continue process wafer, guarantee the output of factory.
Currently, the method for discrimination of polishing pad life relies primarily on following methods:
1. by the working time of polishing pad.After replacing polishing pad, board resetting polishing pad uses the time;It Afterwards, the working time of board real-time statistics polishing pad reminds client to replace polishing pad after reaching setting value.
2. counting the quantity for planarizing wafer on every polishing pad.After replacing polishing pad, board resets this piece polishing pad Planarize the quantity of wafer;Later, the quantity of board real-time statistics polishing pad planarization wafer is reminded after reaching setting value Client replaces polishing pad;
3., with the depth of tool measurement polishing pad groove, the mill of polishing pad is judged with this when board maintenance shut-downs Damage situation, it is determined whether need replacing polishing pad.
Wherein, the shortcomings that method 1,2 is due to polishing block revolving speed, rubbing head revolving speed, to polish the parameters such as flow quantity, temperature Fluctuation, be easy to cause in the identical working time or in the case where same flat wafer number polishing pad abrasion condition not Unanimously, replacement polishing pad be easy to cause waste too early, replaces yield and yield decline that polishing pad be easy to cause product too late.Side The shortcomings that method 3 is to need manually to remove measurement polishing pad trench depth, thus will cause polishing pad from pollution, while production being caused to imitate Rate reduces.
Summary of the invention
The object of the present invention is to provide a kind of system and method for CMP pad service life on-line checking, can be accurate The service life (remaining working time) of polishing pad is effectively calculated, and can be adjusted in real time according to the remaining working time of polishing pad CMP process parameter promotes the planarization efficiency and planarization quality of wafer.
In order to achieve the above object, a technical solution of the invention is to provide a kind of online for the CMP pad service life The system of detection, the polishing pad of with groove are arranged in the surface of polishing block and rotate with polishing block;Setting above the polishing block Have relative to the rubbing head that polishing block is mobile or rotates, the wafer that the rubbing head is carried is pressed in the polishing area of pad interface Domain carries out planarization process, which is characterized in that the system includes:
Light source and optical detector are mounted on the component of corresponding polishing area;The source emissioning light beam extremely polishes Pad surface, the polished pad surface reflection of light beam to optical detector;
Controller, it is online to receive the signal from the optical detector, trench depth is calculated according to signal strength or weakness, with this Judge the remaining working time of polishing pad.
Optionally, the light source and optical detector are integrated in integrated photoelectric sensor;Alternatively, the light source and light Learn the device that detector is separate from.
Optionally, the component of the corresponding polishing area includes the polishing arm of the fixed rubbing head, the light source and light Detector is learned to be mounted on the polishing arm.
Optionally, the nozzle to pad interface supply polishing fluid is equipped with above the polishing block;The corresponding polishing The component in region, the polishing fluid distribution arm comprising the fixation nozzle, the light source and optical detector are mounted on the polishing In liquid distribution arm.
Optionally, the top of the polishing block is equipped with the finishing head of finishing pad interface;The corresponding polishing area Component includes finishing head and the conditioning arm for being mounted on the fixed finishing head, and the light source and optical detector are mounted on described repair On whole head or conditioning arm.
Another technical solution of the invention is to provide a kind of method for CMP pad service life on-line checking, uses The system that any one of the above is used for CMP pad service life on-line checking;The method includes process below:
During polishing pad is rotated with polishing block, the polished pad reflection of the light beam that light source issues;
Light intensity signal that optical detector real-time reception is reflected from pad interface is simultaneously transmitted to controller;
Controller calculates the trench depth of pad interface according to light intensity signal;
Controller calculates the remaining working time of polishing pad according to the trench depth of pad interface;
When the remaining working time of polishing pad being less than given threshold, controller provides the alerting signal of replacement polishing pad.
It is online to be to provide a kind of CMP process parameter based on polishing pad life tests for technical solution there are one of the invention Method of adjustment includes process below:
Determine the relationship between the remaining working time of polishing pad and CMP process parameter;
The trench depth signal of on-line checking pad interface;
The remaining working time of polishing pad is calculated by the trench depth signal of pad interface;
According to the remaining working time of polishing pad, on-line tuning CMP process parameter.
Optionally, multiple lifetime regions are divided according to the working time of polishing pad, has different works for the foundation of each lifetime region Skill formula;Different process recipe, corresponding to the CMP process parameter with different planarization removal rates.
Optionally, the remaining working time of all polishing pads and the relationship of CMP process parameter are stored in controller;
After CMP process starts, the polished pad of the light beam that light source issues reflexes to optical detector;
The controller collects the optical signalling from optical detector online, is converted into polishing by the first mathematical relationship Pad the trench depth signal on surface;Trench depth signal is converted into the surplus of polishing pad according to the second mathematical relationship by the controller The remaining working time;
Remaining working time of the controller according to polishing pad, on-line tuning CMP process parameter: when the remaining working time When small, using the big CMP process parameter of planarization removal rate;When the remaining working time is big, gone using planarization Except the small CMP process parameter of rate.
Optionally, the CMP process parameter includes the planarization time, polishing block revolving speed, rubbing head revolving speed, rubbing head pressure Power, polishing flow quantity, polishing disk temperature.
Polishing pad life on-line detecting system and method through the invention, can more accurately calculate the longevity of polishing pad It orders (remaining working time), and polishing pad will not be polluted.Light source and optical detector of the invention can integrate one Body independently separates, and is arranged on a variety of components of corresponding polishing area, and installation site is flexible, small to the change of CMP tool, Applicability is wide.
The present invention can also adjust in real time CMP process parameter according to the remaining working time of polishing pad, remove to planarization Rate is controlled, to promote the planarization efficiency and planarization quality of wafer.The present invention is drawn according to the working time of polishing pad Divide multiple lifetime regions, establish the process recipes for corresponding to different planarization removal rates respectively, can work in the residue of polishing pad When time is small, used when the remaining working time of polishing pad is big using the big process recipe of planarization removal rate The small process recipe of removal rate is planarized, it is more abundant to the utilization of polishing pad in this way, also more to the control of wafer planarization quality Add fine.
Detailed description of the invention
Fig. 1 is the simplified schematic diagram for polishing pad life on-line detecting system;
Fig. 2 is the simplified schematic diagram of the CMP tool of setting polishing pad life on-line detecting system;
Fig. 3 is the flow diagram for polishing pad life online test method;
Fig. 4 is the flow chart of the CMP process parameter on-line tuning method based on polishing pad life tests.
Specific embodiment
Referring to fig. 1 and fig. 2, one embodiment of polishing pad life on-line detecting system is provided:
The system comprises polishing block 3, the polishing pad 2 of with groove is pasted onto 3 upper surface of polishing block and with polishing Platform 3 rotates together.Light source 4 and optical detector 5 are provided with above polishing area, the light source 4 emits light beam 6 to polishing pad 2 Surface, 2 surface reflections of polished pad to optical detector 5.
The light source 4 and optical detector 5 can be integrated in integrated photoelectric sensor;Alternatively, the light source 4 and light Learn the device that detector 5 can be separate from.
The top of the polishing block 3 is equipped with the rubbing head 1 of carrying wafer, and the light source 4 and optical detector 5 can be installed On the polishing arm 8 of fixed rubbing head 1.
The top of the polishing block 3 is equipped with the nozzle to 2 upper surface of polishing pad supply polishing fluid, the light source 4 and light Learning detector 5 may be mounted in the polishing fluid distribution arm 9 of the fixed nozzle.
The top of the polishing block 3 is equipped with the finishing head 10 for modifying 2 surface of polishing pad, and the light source 4 and optics are visited Surveying device 5 may be mounted on finishing head 10, or be mounted in the conditioning arm 11 of the fixed finishing head 10.
The light source 4 and optical detector 5 may be mounted on other components of polishing area.So that light source 4 emits light On beam 6 to 2 upper surface back reflection to optical detector 5 of polishing pad.
In a kind of embodiment, setting polishing block 3 is rotated with polishing pad 2 according to certain speed, at this point, optical detector 5 Real-time reception emits from light source 4 to the reflected light behind 2 surface of polishing pad, and is transmitted to controller 7.Controller 7 is according to receiving Light intensity signal be demarcated as the trench depth on 2 surface of polishing pad.Controller 7 is polished according to 2 surface grooves depth calculation of polishing pad The service life (remaining working time) of pad 2, calculation method are generally obtained using experiment and experience.When the remaining work of the polishing pad 2 of calculating When making the time less than given threshold, 7 alert device user of controller replaces polishing pad 2.
Include specific implementation process below for the method for CMP pad service life on-line checking with reference to Fig. 3:
(1) light intensity signal in polishing block rotary course, after the polished pad reflection of optical detector real-time reception light source And it is transmitted to controller;
(2) controller calculates the trench depth of pad interface according to light intensity signal;
(3) controller is according to remaining working time of Pad Groove Design depth calculation polishing pad;
(4) it is less than given threshold when the remaining working time of polishing pad, controller alert device user replaces polishing pad.
With reference to Fig. 4, a method of the CMP process parameter adjustment realized based on polishing pad life on-line checking includes Specific implementation process below:
(1) relationship between polishing pad life (remaining working time) and technological parameter is determined;
Technological parameter includes the planarization time, polishing block revolving speed, rubbing head revolving speed, rubbing head pressure, polishing flow quantity, throws Disc temperatures etc. can control the factor of wafer planarization removal efficiency;
(2) the trench depth signal of on-line checking pad interface;
(3) polishing pad life is determined by the trench depth signal of pad interface;
(4) according to polishing pad life on-line tuning CMP process parameter.
In the present embodiment, it first passes through experiment and determines the pass polished between pad life (remaining working time) and technological parameter System.A kind of detailed process of embodiment is: assuming that the working time of certain polishing pad is 30 hours, being divided according to 30 hours Different lifetime regions, the present embodiment use 6 lifetime regions, and each lifetime region is 5 hours, while each lifetime region is established not respectively Same process recipe.Process recipe is obtained according to engineer testing and experience, and different process recipes corresponds to different flat Change removal rate.All polishing pad lifes and the storage of technological parameter relationship are in the controller.
After CMP process starts, controller collects the optical signalling from optical detector online, passes through the first mathematical relationship It is converted into the trench depth signal of pad interface, the first mathematical relationship can be obtained by calibration;
Controller is converted into trench depth signal according to the second mathematical relationship the service life of polishing pad, and the second mathematical relationship can To be obtained by experiment and experience;
Service life of the controller according to polishing pad, on-line tuning process recipe.Generally, when the remaining working time is small It waits, using the big process recipe of planarization removal rate;Conversely, the process recipe small using planarization removal rate.
It, can also be into conclusion the present invention can accurately and effectively calculate the service life (remaining working time) of polishing pad One step adjusts CMP process parameter according to the remaining working time of polishing pad in real time, to promote the planarization efficiency peace of wafer Smoothization quality.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (10)

1. the surface of polishing block is arranged in simultaneously in a kind of system for CMP pad service life on-line checking, the polishing pad of with groove It is rotated with polishing block;Be provided with the rubbing head that opposite polishing block is mobile or rotates above the polishing block, the rubbing head by its The polishing area that the wafer of carrying is pressed in pad interface carries out planarization process, which is characterized in that the system includes:
Light source and optical detector are mounted on the component of corresponding polishing area;The source emissioning light beam is to polishing pad table Face, the polished pad surface reflection of light beam to optical detector;
Controller, it is online to receive the signal from the optical detector, trench depth is calculated according to signal strength or weakness, is judged with this The remaining working time of polishing pad.
2. being used for the system of CMP pad service life on-line checking as described in claim 1, which is characterized in that the light source and light It learns detector and is integrated in integrated photoelectric sensor;
Alternatively, the device that the light source and optical detector are separate from.
3. being used for the system of CMP pad service life on-line checking as described in claim 1, which is characterized in that the corresponding polishing The component in region includes the polishing arm of the fixed rubbing head, and the light source and optical detector are mounted on the polishing arm.
4. being used for the system of CMP pad service life on-line checking as described in claim 1, which is characterized in that on the polishing block Side is equipped with the nozzle to pad interface supply polishing fluid;The component of the corresponding polishing area includes the fixed nozzle Polishing fluid distribution arm, the light source and optical detector are mounted in the polishing fluid distribution arm.
5. being used for the system of CMP pad service life on-line checking as described in claim 1, which is characterized in that the polishing block Top is equipped with the finishing head of finishing pad interface;The component of the corresponding polishing area is comprising finishing head and is mounted on fixed institute The conditioning arm of finishing head is stated, the light source and optical detector are mounted in the finishing head or conditioning arm.
6. a kind of method for CMP pad service life on-line checking, is used for using described in any one of claim 1-5 The system of CMP pad service life on-line checking, which is characterized in that the method includes process below:
During polishing pad is rotated with polishing block, the polished pad reflection of the light beam that light source issues;
Light intensity signal that optical detector real-time reception is reflected from pad interface is simultaneously transmitted to controller;
Controller calculates the trench depth of pad interface according to light intensity signal;
Controller calculates the remaining working time of polishing pad according to the trench depth of pad interface;
When the remaining working time of polishing pad being less than given threshold, controller provides the alerting signal of replacement polishing pad.
7. a kind of CMP process parameter on-line tuning method based on polishing pad life tests, which is characterized in that
Include process below:
Determine the relationship between the remaining working time of polishing pad and CMP process parameter;
The trench depth signal of on-line checking pad interface;
The remaining working time of polishing pad is calculated by the trench depth signal of pad interface;
According to the remaining working time of polishing pad, on-line tuning CMP process parameter.
8. CMP process parameter on-line tuning method as claimed in claim 7, which is characterized in that
Multiple lifetime regions are divided according to the working time of polishing pad, have different process recipes for the foundation of each lifetime region;It is different Process recipe, corresponding to it is different planarization removal rates CMP process parameters.
9. the CMP process parameter on-line tuning method as described in claim 7 or 8, which is characterized in that
The remaining working time of all polishing pads and the relationship of CMP process parameter are stored in controller;
After CMP process starts, the polished pad of the light beam that light source issues reflexes to optical detector;
The controller collects the optical signalling from optical detector online, is converted into polishing pad table by the first mathematical relationship The trench depth signal in face;The controller is converted into trench depth signal according to the second mathematical relationship the remaining work of polishing pad Make the time;
Remaining working time of the controller according to polishing pad, on-line tuning CMP process parameter: small when the remaining working time When, using the big CMP process parameter of planarization removal rate;When the remaining working time is big, planarization removal rate is used Small CMP process parameter.
10. CMP process parameter on-line tuning method as claimed in claim 9, which is characterized in that
The CMP process parameter includes planarization time, polishing block revolving speed, rubbing head revolving speed, rubbing head pressure, polishing liquid stream Amount, polishing disk temperature.
CN201811612877.0A 2018-12-27 2018-12-27 A kind of system and method for CMP pad service life on-line checking Pending CN109454547A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201811612877.0A CN109454547A (en) 2018-12-27 2018-12-27 A kind of system and method for CMP pad service life on-line checking
CN201910441353.8A CN110026885A (en) 2018-12-27 2019-05-24 A kind of system and method polishing pad life on-line checking

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811612877.0A CN109454547A (en) 2018-12-27 2018-12-27 A kind of system and method for CMP pad service life on-line checking

Publications (1)

Publication Number Publication Date
CN109454547A true CN109454547A (en) 2019-03-12

Family

ID=65615270

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201811612877.0A Pending CN109454547A (en) 2018-12-27 2018-12-27 A kind of system and method for CMP pad service life on-line checking
CN201910441353.8A Pending CN110026885A (en) 2018-12-27 2019-05-24 A kind of system and method polishing pad life on-line checking

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910441353.8A Pending CN110026885A (en) 2018-12-27 2019-05-24 A kind of system and method polishing pad life on-line checking

Country Status (1)

Country Link
CN (2) CN109454547A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111230723A (en) * 2020-02-25 2020-06-05 上海华虹宏力半导体制造有限公司 Real-time detection system, real-time detection method and chemical mechanical polishing equipment
CN111469047A (en) * 2020-04-14 2020-07-31 大连理工大学 Test device for online detection of contact characteristics of polishing pad and use method thereof
CN112059914A (en) * 2020-09-21 2020-12-11 华海清科股份有限公司 Slip sheet detection device and chemical mechanical polishing system
CN112975749A (en) * 2019-12-17 2021-06-18 大量科技股份有限公司 Method for instantly reconditioning polishing pad
CN114227528A (en) * 2021-12-07 2022-03-25 长江存储科技有限责任公司 Chemical mechanical polishing equipment
CN114952597A (en) * 2022-05-31 2022-08-30 杭州众硅电子科技有限公司 Acquisition method and system for chemical mechanical planarization white light end point detection
CN115103738A (en) * 2020-06-29 2022-09-23 应用材料公司 Temperature and slurry flow rate control in CMP
CN117245482A (en) * 2023-11-20 2023-12-19 铭扬半导体科技(合肥)有限公司 Control method of polishing equipment
CN117506711A (en) * 2024-01-04 2024-02-06 苏州博宏源机械制造有限公司 Polishing equipment and method for improving flatness of wafer

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110640618A (en) * 2019-09-26 2020-01-03 中国科学院上海光学精密机械研究所 Detection device and detection method for polishing die repair disc period
CN111515864B (en) * 2020-04-30 2022-04-05 华虹半导体(无锡)有限公司 Monitoring method and system for diamond disk
CN113579991B (en) * 2021-09-27 2021-12-21 西安奕斯伟硅片技术有限公司 Final polishing method and system for silicon wafer and silicon wafer
CN114083427B (en) * 2022-01-24 2022-05-17 杭州众硅电子科技有限公司 Polishing pad surface condition online detection method and detection system
CN115091353B (en) * 2022-07-15 2022-11-08 华海清科股份有限公司 Polishing solution adjusting method and chemical mechanical polishing equipment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61213611A (en) * 1985-03-19 1986-09-22 Nec Corp Polishing method for crystal
US20020077037A1 (en) * 1999-05-03 2002-06-20 Tietz James V. Fixed abrasive articles
US6838169B2 (en) * 2002-09-11 2005-01-04 Psiloquest, Inc. Polishing pad resistant to delamination
JP4202826B2 (en) * 2003-06-02 2008-12-24 株式会社東芝 Chemical mechanical polishing method of organic film and manufacturing method of semiconductor device
JP4703141B2 (en) * 2004-07-22 2011-06-15 株式会社荏原製作所 Polishing apparatus, substrate processing apparatus, and substrate jumping detection method
US8192248B2 (en) * 2008-05-30 2012-06-05 Memc Electronic Materials, Inc. Semiconductor wafer polishing apparatus and method of polishing
CN102672595B (en) * 2011-03-07 2016-02-17 中芯国际集成电路制造(上海)有限公司 Finishing method
JP6066192B2 (en) * 2013-03-12 2017-01-25 株式会社荏原製作所 Polishing pad surface texture measuring device
CN107662159B (en) * 2017-09-15 2019-04-02 清华大学 Modify control method, device, trimmer and the polissoir of polishing pad
CN107971931B (en) * 2017-11-24 2019-12-03 上海华力微电子有限公司 A kind of detection device and working method of chemical and mechanical grinding cushion abrasion
CN108908063A (en) * 2018-07-20 2018-11-30 清华大学 The control method and control system of polish pressure are adjusted according to consumptive material life cycle

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112975749A (en) * 2019-12-17 2021-06-18 大量科技股份有限公司 Method for instantly reconditioning polishing pad
CN111230723B (en) * 2020-02-25 2022-02-08 上海华虹宏力半导体制造有限公司 Real-time detection system, real-time detection method and chemical mechanical polishing equipment
CN111230723A (en) * 2020-02-25 2020-06-05 上海华虹宏力半导体制造有限公司 Real-time detection system, real-time detection method and chemical mechanical polishing equipment
CN111469047A (en) * 2020-04-14 2020-07-31 大连理工大学 Test device for online detection of contact characteristics of polishing pad and use method thereof
CN111469047B (en) * 2020-04-14 2021-06-25 大连理工大学 Test device for online detection of contact characteristics of polishing pad and use method thereof
CN115103738A (en) * 2020-06-29 2022-09-23 应用材料公司 Temperature and slurry flow rate control in CMP
CN112059914A (en) * 2020-09-21 2020-12-11 华海清科股份有限公司 Slip sheet detection device and chemical mechanical polishing system
CN114227528A (en) * 2021-12-07 2022-03-25 长江存储科技有限责任公司 Chemical mechanical polishing equipment
CN114952597A (en) * 2022-05-31 2022-08-30 杭州众硅电子科技有限公司 Acquisition method and system for chemical mechanical planarization white light end point detection
CN114952597B (en) * 2022-05-31 2023-10-20 杭州众硅电子科技有限公司 Acquisition method and system for chemical mechanical planarization white light end point detection
CN117245482A (en) * 2023-11-20 2023-12-19 铭扬半导体科技(合肥)有限公司 Control method of polishing equipment
CN117506711A (en) * 2024-01-04 2024-02-06 苏州博宏源机械制造有限公司 Polishing equipment and method for improving flatness of wafer
CN117506711B (en) * 2024-01-04 2024-03-22 苏州博宏源机械制造有限公司 Polishing equipment and method for improving flatness of wafer

Also Published As

Publication number Publication date
CN110026885A (en) 2019-07-19

Similar Documents

Publication Publication Date Title
CN109454547A (en) A kind of system and method for CMP pad service life on-line checking
KR101715726B1 (en) Using optical metrology for feed back and feed forward process control
US20170252889A1 (en) Polishing apparatus
US8870625B2 (en) Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method
US7147541B2 (en) Thickness control method and double side polisher
TWI458589B (en) Profile measuring method
US9108292B2 (en) Method of obtaining a sliding distance distribution of a dresser on a polishing member, method of obtaining a sliding vector distribution of a dresser on a polishing member, and polishing apparatus
KR101669491B1 (en) Apparatus and method for double-side polishing of work
CN104070445B (en) Lapping device and wear detecting method
US6896583B2 (en) Method and apparatus for conditioning a polishing pad
CN106853610B (en) Polishing pad and its monitoring method and monitoring system
US20210023672A1 (en) Polishing-amount simulation method for buffing, and buffing apparatus
US20130217306A1 (en) CMP Groove Depth and Conditioning Disk Monitoring
WO2010017142A2 (en) Closed loop control of pad profile based on metrology feedback
KR100238938B1 (en) Polishing system
TW201242717A (en) Apparatus and method for compensation of variability in chemical mechanical polishing consumables
KR20170082127A (en) Work polishing method and dressing method of polishing pad
CN109702650A (en) Grind pad dressing method, chemical and mechanical grinding method and device
US20060113036A1 (en) Computer integrated manufacturing control system for oxide chemical mechanical polishing
CN107984374A (en) A kind of detecting real-time device and its method for detecting for chemically-mechanicapolish polishing grinding rate
JP2000271854A (en) Machining method and device thereof, and machining method for semiconductor substrate
KR100789842B1 (en) Apparatus for mesuring the pad surface profile, and method of revising the pad surface profile taking use of it, and chemical mechanical polishing equipment taking use of it
JP2023144946A (en) Polishing device and polishing method
JP2005081461A (en) Polishing method and device of wafer or the like
CN116945032A (en) Surface texture measuring system, surface texture measuring method, polishing apparatus, and polishing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190312