CN102419603A - Temperature control system of polishing pad in chemical mechanical polishing process - Google Patents
Temperature control system of polishing pad in chemical mechanical polishing process Download PDFInfo
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- CN102419603A CN102419603A CN2011101381524A CN201110138152A CN102419603A CN 102419603 A CN102419603 A CN 102419603A CN 2011101381524 A CN2011101381524 A CN 2011101381524A CN 201110138152 A CN201110138152 A CN 201110138152A CN 102419603 A CN102419603 A CN 102419603A
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Abstract
The invention discloses a temperature control system of a polishing pad in a chemical mechanical polishing process. The temperature control system comprises a temperature detector and an air compressor temperature control system, wherein the air compressor temperature control system comprises an air compressor and a gas pipeline; the air compressor and the gas pipeline are mutually connected to form a closed loop; the gas pipeline is arranged between the polishing pad and an independent platform which is positioned below the polishing pad; the temperature control system also comprises a main controller; and the temperature detector and the air compressor temperature control system are respectively connected with the main controller. According to the invention, by controlling the temperature of the polishing pad, the temperature of a wafer in the chemical mechanical polishing process is controlled; chemical characteristics, such as selection ratio, removal rate and the like, of a polishing solution are kept at optimal values; the service time of the polishing pad is prolonged; and the flatness and the stability of the wafer are enhanced.
Description
Technical field
The present invention relates generally to technical field of manufacturing semiconductors, or rather, the present invention relates to the temperature control system of grinding pad in a kind of chemical mechanical planarization process.
Background technology
In the semiconductor fabrication process technology, flattening surface is an important technology handling the high density photoetching, because of there not being the flat surfaces of high low head, just can avoid the scattering that makes public, and reaches accurate design transfer (Pattern Transfer).Planarization mainly contains spin-on glasses method (Spin On Glass; SOG) and chemical mechanical milling method (Chemical Mechanical Polish; CMP) etc.; But after semiconductor fabrication process technology got into millimicron, the spin-on glasses method can't satisfy needed flatness, so chemical mechanical milling method has become and can realize VLSI (very large scale integrated circuits) at present; Or even a kind of technology of ULSI and huge size integrated circuit " comprehensive planarization (Global Planarization) ", be one important procedure in the semiconductor fabrication process.Chemical mechanical milling method is accomplished by the chemical-mechanical grinding device of special use; A work-table of chemicomechanical grinding mill mainly comprises: grinding table; Be layered on the grinding pad on the grinding table; Be used for carrying and grind the pipe fitting of starching on the grinding pad, be used for grind slurry pump in the pipe fitting liquid pump with regulate a series of parts such as brush.Usually can be in chemical mechanical planarization process owing to chemical and mechanical effect produce heat; By shown in Figure 1; Speed to grind Ti is example (Ti generally is one of film type that need grind), can see under identical conditions, along with the rising of temperature; The removal speed of Ti is just big more; Simultaneously the shearing force that receives of grinding pad surface is just more little, and the concrete condition that changes with temperature variation from the Ti clearance can be derived other films that need grind also has similar temperature characterisitic, and this temperature characterisitic can have influence on the stability and the grinding wafer planarization effect of the chemical machinery system of wafer; And traditional board does not possess temperature control system, thereby can't solve the temperature control problem in chemical mechanical planarization process well.
Summary of the invention
Problem to above-mentioned existence; The object of the present invention is to provide the temperature control system of grinding pad in a kind of chemical mechanical planarization process; Temperature through the control grinding pad makes that the temperature of wafer in the cmp processing procedure is controlled, specifically realizes through following technical proposals:
The temperature control system of grinding pad in a kind of chemical mechanical planarization process; Wherein, comprise hygrosensor and air compressor temperature control system, said air compressor temperature control system comprises air compressor and gas piping; Said air compressor and said gas piping interconnect and form the closed-loop path; Said gas piping is located at grinding pad and between the grinding rotating disk below the grinding pad, the end face that wherein grinds rotating disk is provided with many grooves, and said gas piping is arranged in said groove; Also comprise master controller, said hygrosensor, said air compressor temperature control system are connected with said master controller respectively.
The temperature control system of grinding pad in the above-mentioned chemical mechanical planarization process; Wherein, When said master controller receives the grinding pad surface temperature that detects from said hygrosensor when surpassing certain limit, said master controller can feedback command give said air compressor temperature control system to reach control grinding pad temperature purpose within the specific limits.
The temperature control system of grinding pad in the above-mentioned chemical mechanical planarization process; Wherein, Said hygrosensor is the laser temperature meter, comprises laser instrument and infrared temperature sensor, and said laser temperature meter is launched the ruddiness that has focused on through said laser instrument; And accept the light wave that laser-bounce returns by said infrared temperature sensor and measure temperature, degree of accuracy is at 0.1 degree centigrade.
Compared with prior art, beneficial effect of the present invention is embodied in:
1, the temperature through the control grinding pad makes that the temperature of wafer in the cmp processing procedure is controlled;
2, the temperature of control wafer in chemical mechanical planarization process can make polishing fluid be in certain temperature range, thereby makes the chemical characteristic of polishing fluid remain on optimum value such as selection ratio, clearance etc.;
3, the degree of being corroded of grinding pad can be different simultaneously because some processing procedure is in temperature, can find the best temperature section, make that grinding pad degree of being corroded is less under the guaranteed situation of clearance, prolong the service time of grinding pad;
4, can be with the value that can set of temperature controlling as the cmp formula, with other parameters in the formula such as pressure, actings in conjunction such as time improve the flatness and the stability of wafer.
Those skilled in the art reads the detailed description of following preferred embodiment, and with reference to after the accompanying drawing, of the present invention these are incited somebody to action obvious with otherwise advantage undoubtedly.
Description of drawings
With reference to appended accompanying drawing, describing embodiments of the invention more fully, yet appended accompanying drawing only is used for explanation and sets forth, and does not constitute limitation of the scope of the invention.
Fig. 1 is the process synoptic diagram that the removal speed of Ti and shearing force that the grinding pad surface receives change along with temperature variation;
Fig. 2 is the structural representation of the temperature control system of grinding pad in the chemical mechanical planarization process of the present invention;
Fig. 3 is the structural representation of gas piping between grinding pad and the grinding rotating disk below it of the temperature control system of grinding pad in the chemical mechanical planarization process of the present invention.
Embodiment
As shown in Figure 2; The temperature control system of grinding pad in the chemical mechanical planarization process of the present invention specifically comprises hygrosensor 1 and air compressor temperature control system 2, also comprises master controller 3; Air compressor temperature control system 2 comprises air compressor 21 and gas piping 22; Air compressor 21 interconnects and forms the closed-loop path with gas piping 22, and gas piping 22 is located at grinding pad 00 and between the grinding rotating disk 01 below the grinding pad 00, and is as shown in Figure 3; The end face that wherein grinds rotating disk 01 is provided with many grooves (not marking in the drawings), and gas piping 22 is arranged in groove.Hygrosensor 1, air compressor temperature control system 2 are connected with master controller 3 respectively, and hygrosensor 1 can adopt the laser temperature meter,
Hygrosensor 1 comprises laser instrument and infrared temperature sensor; Its principle of work is: launched the ruddiness that has focused on by laser instrument; Accept the light wave that laser-bounce returns by infrared temperature sensor then and detect temperature; Degree of accuracy can reach 0.1 degree centigrade, and parameter is specifically chosen according to actual environment for use.
Include motor (not marking in the drawings) in the air compressor 21; Motor is electrically connected with master controller 3; When master controller 3 receives grinding pad 00 surface temperature that detects from hygrosensor 1 when surpassing certain limit; Master controller 3 can feedback command be given air compressor temperature control system 2; The air themperatures rising that motor can be accelerated or slow down in the feasible gas piping that communicates with air compressor 21 22 of rotating speed this moment perhaps reduces, and controls grinding pad 00 temperature purpose within the specific limits to reach.
In sum; The temperature control system of grinding pad has realized the temperature constant in the chemical mechanical planarization process in the chemical mechanical planarization process of the present invention, thereby has guaranteed the stability of wafer grinding rate in the cmp process, improves the stability and the output capacity of wafer; Avoid wafer because some defectives that temperature variation might produce; Such as losing of crystal column surface flatness, method is simple, and is compatible with traditional chemical mechanical lapping mode.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, therefore, although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as, and any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (3)
1. the temperature control system of grinding pad in the chemical mechanical planarization process; It is characterized in that comprise hygrosensor and air compressor temperature control system, said air compressor temperature control system comprises air compressor and gas piping; Said air compressor and said gas piping interconnect and form the closed-loop path; Said gas piping is located at grinding pad and between the grinding rotating disk below the grinding pad, the end face that wherein grinds rotating disk is provided with many grooves, and said gas piping is arranged in said groove; Also comprise master controller, said hygrosensor, said air compressor temperature control system are connected with said master controller respectively.
2. the temperature control system of grinding pad in the chemical mechanical planarization process according to claim 1; It is characterized in that; When said master controller receives the grinding pad surface temperature that detects from said hygrosensor when surpassing certain limit, said master controller can feedback command give said air compressor temperature control system to reach control grinding pad temperature purpose within the specific limits.
3. the temperature control system of grinding pad in the chemical mechanical planarization process according to claim 1 and 2; It is characterized in that; Said hygrosensor is the laser temperature meter, comprises laser instrument and infrared temperature sensor, and said laser temperature meter is launched the ruddiness that has focused on through said laser instrument; And accept the light wave that laser-bounce returns by said infrared temperature sensor and measure temperature, degree of accuracy is at 0.1 degree centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101381524A CN102419603A (en) | 2011-05-26 | 2011-05-26 | Temperature control system of polishing pad in chemical mechanical polishing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101381524A CN102419603A (en) | 2011-05-26 | 2011-05-26 | Temperature control system of polishing pad in chemical mechanical polishing process |
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| CN102419603A true CN102419603A (en) | 2012-04-18 |
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| CN2011101381524A Pending CN102419603A (en) | 2011-05-26 | 2011-05-26 | Temperature control system of polishing pad in chemical mechanical polishing process |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107088825A (en) * | 2017-06-06 | 2017-08-25 | 上海华力微电子有限公司 | Work-table of chemicomechanical grinding mill, temperature control system and its temprature control method |
| US10160090B2 (en) | 2015-11-12 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing method |
| CN111546228A (en) * | 2020-05-14 | 2020-08-18 | 长江存储科技有限责任公司 | Grinding pad temperature control method and device and grinding equipment |
| CN111641140A (en) * | 2020-06-08 | 2020-09-08 | 广东电网有限责任公司 | Heat radiator for primary equipment of transformer substation |
| TWI793658B (en) * | 2020-06-30 | 2023-02-21 | 美商應用材料股份有限公司 | Apparatus and method for cmp temperature control |
| US11597052B2 (en) | 2018-06-27 | 2023-03-07 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
| US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5957750A (en) * | 1997-12-18 | 1999-09-28 | Micron Technology, Inc. | Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates |
| US20070054599A1 (en) * | 2002-07-18 | 2007-03-08 | Micron Technology, Inc. | Apparatus and method of controlling the temperature of polishing pads used in planarizing micro-device workpieces |
| CN201045592Y (en) * | 2006-07-05 | 2008-04-09 | 高琳琳 | Portable multifunction infrared thermometer |
| CN101976087A (en) * | 2010-09-07 | 2011-02-16 | 西安信唯信息科技有限公司 | Energy-dividing solar module temperature control method |
| CN201744919U (en) * | 2010-06-25 | 2011-02-16 | 中芯国际集成电路制造(上海)有限公司 | Grinding machine platform of preheated grinding pad |
-
2011
- 2011-05-26 CN CN2011101381524A patent/CN102419603A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5957750A (en) * | 1997-12-18 | 1999-09-28 | Micron Technology, Inc. | Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates |
| US20070054599A1 (en) * | 2002-07-18 | 2007-03-08 | Micron Technology, Inc. | Apparatus and method of controlling the temperature of polishing pads used in planarizing micro-device workpieces |
| CN201045592Y (en) * | 2006-07-05 | 2008-04-09 | 高琳琳 | Portable multifunction infrared thermometer |
| CN201744919U (en) * | 2010-06-25 | 2011-02-16 | 中芯国际集成电路制造(上海)有限公司 | Grinding machine platform of preheated grinding pad |
| CN101976087A (en) * | 2010-09-07 | 2011-02-16 | 西安信唯信息科技有限公司 | Energy-dividing solar module temperature control method |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10160090B2 (en) | 2015-11-12 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing method |
| CN107088825A (en) * | 2017-06-06 | 2017-08-25 | 上海华力微电子有限公司 | Work-table of chemicomechanical grinding mill, temperature control system and its temprature control method |
| US11597052B2 (en) | 2018-06-27 | 2023-03-07 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
| US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
| CN111546228A (en) * | 2020-05-14 | 2020-08-18 | 长江存储科技有限责任公司 | Grinding pad temperature control method and device and grinding equipment |
| CN111641140A (en) * | 2020-06-08 | 2020-09-08 | 广东电网有限责任公司 | Heat radiator for primary equipment of transformer substation |
| CN111641140B (en) * | 2020-06-08 | 2022-01-18 | 广东电网有限责任公司 | Heat radiator for primary equipment of transformer substation |
| TWI793658B (en) * | 2020-06-30 | 2023-02-21 | 美商應用材料股份有限公司 | Apparatus and method for cmp temperature control |
| TWI828520B (en) * | 2020-06-30 | 2024-01-01 | 美商應用材料股份有限公司 | Apparatus for cmp temperature control |
| US11919123B2 (en) | 2020-06-30 | 2024-03-05 | Applied Materials, Inc. | Apparatus and method for CMP temperature control |
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Application publication date: 20120418 |