CN104842253A - Polishing device for optical grade plane processing of silicon carbide crystals and processing method - Google Patents
Polishing device for optical grade plane processing of silicon carbide crystals and processing method Download PDFInfo
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- CN104842253A CN104842253A CN201410056725.2A CN201410056725A CN104842253A CN 104842253 A CN104842253 A CN 104842253A CN 201410056725 A CN201410056725 A CN 201410056725A CN 104842253 A CN104842253 A CN 104842253A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
Abstract
The invention relates to a polishing device for optical grade plane processing of silicon carbide crystals and a processing method. The polishing device comprises a polishing chassis which bears polishing liquid and can rotate, an all-direction polishing separation ring which is placed above the polishing chassis and is used for bearing wafers to be polished, and a drive mechanism which enables the all-direction polishing separation ring to rotate. The all-direction polishing separation ring comprises a separation outer ring and a plurality of separation inner rings which are placed in the separation outer ring and are arranged around the axis of the all-direction polishing separation ring. Gear-shaped structures which can be meshed with one another and can be meshed with a drive gear of the drive mechanism are arranged on the outer portions of the separation inner rings and the inner portion of the separation outer ring respectively, so that the rotating speed of the wafers to be polished, polishing abrasive supplying and polishing operation tracks are kept consistent relatively. According to the polishing device, the all-direction polishing separation ring is used for replacing a commonly-used IAPD, uniwafer polishing can be achieved, multiple wafers can also be polished together, multiple wafers of different specifications can also be polished at the same time, and the polishing efficiency is improved.
Description
Technical field
The present invention relates to crystal pro cessing technical field, be specifically related to a kind of burnishing device of the optical grade plane machining for carborundum crystals and adopt this device to obtain the processing method of the optical grade plane of carborundum crystals.
Background technology
Carborundum crystals is third generation wide bandgap semiconductor materials, with first generation silicon, second generation gallium arsenide semiconductor material is compared, there is energy gap large, breakdown voltage is high, thermal conductivity is high, electronics saturation drift velocity is high, electron mobility is high, dielectric constant is little, radiation resistance is strong, the excellent physicochemical properties such as chemical stability is good, and with the features such as silicon integrated circuit process compatible, excellent performance makes carborundum crystals become manufacture high temperature, high frequency, high-power, radioresistance, the preferred material of nonvolatile memory part and integrated optoelectronic device, become new material in the world, the focus of microelectronics and optoelectronic areas research.Although it is excellent to be equally all the monocrystal material performances such as the gallium nitride of third generation wide band gap semiconducter, aluminium nitride, zinc oxide, but crystal growth preparation is very difficult, and single-crystal silicon carbide material has made a breakthrough through its growing technology of years of researches, for extensive commercial application is laid a good foundation.
Carborundum crystals is applied to the wafer that device need be processed into certain size, basic technology comprises crystal growth, crystal ingot cut with detect, the step such as external diameter grinds, cut into slices, bevelling, top layer are ground, etch, polishing.Because carborundum crystals hardness is very high, be only second to diamond, this brings very large difficulty, the especially optical grade Surface Machining of silicon carbide wafer for crystal pro cessing, and process velocity is slow, and consumes time is long.The surface optical processing technology of carbofrax material is similar to traditional optical material, but because its hardness is higher, the removal amount of the material surface therefore in the unit interval is less, abrasive material must use boron carbide instead or synthetic diamond micropowder could carry out more effective grinding to its surface, and its processing method adopts numerical control optical process technology CCOS (Computer-controlled Optical Surfacing) usually.Numerical control optical process technology is according to quantitative surface testing data, on the basis of process Controlling model, the small abrasive nose that computerizeds control grinds or polishing optical element, is controlled the removal amount of material by control bistrique at the residence time of surface of the work and the relative pressure between bistrique and workpiece.In process, because small abrasive nose can follow the tracks of the change of non-spherical surface each point radius of curvature relative efficiency, thus very high machining accuracy can be obtained with aspheric shape good agreement; Adopt simultaneously and computerized control, apply quantitative testing result and instruct process, it is fast that it has given full play to computer execution speed, remember the advantages such as accurate, thus the repeatable accuracy of processing and efficiency is made to increase substantially, especially for the carbofrax material of high rigidity, its aspherical mirror machining efficiency can improve greatly.
When utilizing numerical control optical process technology to process carborundum optical grade surface, although machining accuracy working (machining) efficiency is all quite high, equipment investment cost is also quite large, is not therefore suitable for the processing on small lot silicon carbide wafer optical grade surface.
Summary of the invention
In view of the problems referred to above that prior art exists, the present inventor recognizes, if adopt conventional CCOS process technology for the man-hour that adds on the optical grade surface of small lot silicon carbide wafer, processing cost is too high.By the float glass process ring of conventional crystalline throwing technology is carried out improving to make it meet the processing request of carborundum crystals, simultaneously by improving glossing parameter, carry out the optical detection of processing plane in conjunction with laser interferometer, may can meet the processing request of the optical grade plane of carborundum crystals.
In view of above-mentioned cognition, on the one hand, the invention provides a kind of burnishing device of the optical grade plane machining for carborundum crystals, comprising:
Carry polishing fluid and the polishing chassis that can rotate;
To be positioned at above described polishing chassis and for carrying each to polishing eseparation ring of polished wafer; And
Make each transmission mechanism rotated to polishing eseparation ring;
Wherein, described respectively comprising to polishing eseparation ring is separated outer shroud and is arranged in the described multiple separation inner ring being separated outer shroud and arranging around its axle center, and the outside of described separation inner ring, the inside being separated outer shroud have that can engage each other also can with the travelling gear meshed gears shape structure of described transmission mechanism to make the speed of rotation of polished wafer, polish abrasive supply and polishing running orbit keeps relative consistent respectively.
The present invention adopts and respectively instead of conventional erratic star wheel to polishing eseparation ring, can carry out polishing by monolithic, also multi-disc can carry out polishing together, the wafer of multi-disc different size can also be carried out polishing simultaneously, improve polishing efficiency.And, make the speed of rotation of each processed wafer in the unit interval, feeding abrasive material, polishing running orbit etc. all keep relatively consistent, can effectively improve the uniformity of wafer process result and improve quality of finish.
Preferably, described burnishing device can also comprise the laser interferometer of the surface of wafer being carried out to optical detection.Optical detection can be carried out to the surface of wafer like this and control polishing process according to testing result, the wafer such as obtained in rough polishing and finishing polish enters following polishing process after meeting regulation requirement again, thus can meet the processing request of the optical grade plane of carborundum crystals.
Preferably, the bottom of described separation outer shroud is configured with radial sun groove.Effectively can improve the contact rate in polishing fluid and wafer polishing face like this, improve polishing efficiency.
Preferably, described polishing chassis is slotted metal dish or the stainless steel disc pasting polishing cloth.Can require to select suitable polishing chassis according to different polishings like this.
Preferably, described each material to polishing eseparation ring is macromolecule polymer material, as polytetrafluoroethylene (PTFE), nylon etc.Like this, eseparation ring can be wear-resisting, is easy to machine-shaping, and not damage wafers.
On the other hand, the present invention also provides a kind of processing method adopting above-mentioned burnishing device to obtain the optical grade plane of carborundum crystals, comprising:
To carborundum crystal ingot carry out shaping, orientation, be cut to required specification wafer after carry out the pretreatment process that bevelling process obtains at least one polished wafer; And
At least one polished wafer is carried out the polishing process of surface finish to optical grade surface;
In described polishing process, the speed of rotation, the feeding abrasive material of at least one polished wafer described in the unit interval keep relative consistent with polishing running orbit.
According to processing method of the present invention, in described pretreatment process, bevelling is carried out to described silicon carbide wafer, sharp edges round and smoothization of silicon carbide wafer can be made, thus effectively increase the contact rate of wafer surface polishing fluid in the unit interval, improve polishing efficiency, and reduce the damage of wafer corner to polishing cloth, effectively improve the service life of polishing cloth.
According to processing method of the present invention, in described polishing process, polishing can be carried out by monolithic, also multi-disc polishing can be carried out together, the wafer of multi-disc different size can also be carried out polishing simultaneously, and the speed of rotation of more wafers, feeding abrasive material and polishing running orbit keep relative consistent, thus can polishing efficiency be improved, and effectively improve the uniformity of wafer process result and improve quality of finish.
Preferably, in described shaping, orientation, cutting action, carborundum crystal ingot is carried out shaping, directional process to required crystal orientation, after crystal orientation is corrected again by crystal ingot shaping to required form, then cut into slices with multi-line cutting machine.Like this, the wafer of required form, crystal orientation, size can be obtained expeditiously.
Preferably, described polishing process comprises rough polishing successively, essence is thrown and chemically mechanical polishing (CMP).Effectively can remove the cut of wafer surface like this, improve the flatness on wafer process surface.
Preferably, in described rough polishing operation, described polishing chassis is fluting copper dish, polishing fluid to be particle diameter the be coarse granule diamond polishing fluid of 3 ~ 5 μm.Like this, roughness can be obtained at nanoscale, surface scratch is more shallow, flatness is higher wafer.
Preferably, throw in operation in described essence, described polishing chassis is fluting tin dish, polishing fluid to be particle diameter the be fine grained diamond polishing fluid of 0.5 ~ 1 μm.Like this, can obtain surperficial essentially no cut or cut seldom, extremely shallow, the wafer that flatness is very high.
Preferably, in described chemical-mechanical polishing process, described polishing chassis is paste the stainless steel disc of polishing cloth, polishing fluid to be the particle diameter adding oxidant the be ultra-fine grain diamond polishing fluid of 0.05 ~ 0.1 μm.Like this, can obtain surface no marking completely, flatness meets the requirements of wafer.
Preferably, described oxidant comprises hydrogen peroxide, chromium oxide or potassium permanganate.
Preferably, in described polishing process, specified standard briquetting can also be added at the back side of at least one polished wafer described respectively.The clearance of finished surface can be improved like this.
The present invention, by carrying out bevelling process to silicon carbide wafer, adds the contact rate of wafer surface polishing fluid in the unit interval, improves polishing efficiency, and reduces the damage of wafer corner to polishing cloth, effectively improves the service life of polishing cloth; By appropriate design wafer batch polishing eseparation ring, polishing disk structure, and different polishing process selects suitable polishing fluid measure, improves quality of finish and the efficiency of silicon carbide wafer.
Accompanying drawing explanation
Fig. 1 schematically shows burnishing device of the present invention and motion state thereof;
Fig. 2 schematically shows in burnishing device of the present invention used each to polishing eseparation ring;
Fig. 3 illustrates the flatness on wafer optical level surface after processing in the inventive method;
Fig. 4 illustrates the roughness on wafer optical level surface after processing in the inventive method.
Detailed description of the invention
Below, with reference to accompanying drawing, and the present invention is further illustrated with the following embodiments.Should understand accompanying drawing and following embodiment is only exemplarily the present invention is described, be not limit the present invention, in the purpose and scope of the invention, following embodiment can have numerous variations.
< burnishing device >
Fig. 1 schematically shows burnishing device of the present invention and motion state thereof.As shown in Figure 1, this device can comprise polishing chassis 1, be positioned at eseparation ring on polishing chassis and transmission mechanism.
Wherein, polishing chassis 1 can carry the polishing fluid for polishing silicon carbide wafer, and can rotate, such as, can rotate under the driving on polishing chassis CD-ROM drive motor (not shown).In addition, polishing chassis 1 can be set to slotted metal dish as required or paste the stainless steel disc of polishing cloth.
Transmission mechanism can comprise the CD-ROM drive motor (governor motor) 5 for driving eseparation ring and to engage with eseparation ring and by power transmission to the travelling gear 4 being separated inner ring 3.CD-ROM drive motor 5 such as can adopt small-power infinite variable speed motor.By regulating the rotating speed of CD-ROM drive motor 5, eseparation ring can be made to rotate with the rotating speed of regulation.
Fig. 2 schematically shows in burnishing device of the present invention used each to eseparation ring.As shown in Figure 2, respectively comprise separation outer shroud 2 to eseparation ring and be arranged in the described multiple separation inner ring 3 being separated outer shroud and arranging around its axle center.The outside of separation inner ring 3, the inside of separation outer shroud 2 have the gear-like structure that can engage each other and also can be meshed with the travelling gear 4 of transmission mechanism respectively, thus separation outer shroud 2 and each inner ring 3 that is separated can be made to rotate with identical speed, and the direction of rotation being separated outer shroud 2 is contrary with each direction of rotation being separated inner ring 3.The middle part of separation inner ring 3 is provided with the slotted eye for carrying polished wafer.Make polishing fluid and polished wafer like this between polishing chassis 1 and eseparation ring, and polished of polished wafer contacting with polishing fluid, by making polishing chassis 1 and eseparation ring rotate, thus carrying out polishing.Again, rotate with identical speed owing to being separated outer shroud 2 and being respectively separated inner ring 3, thus in the unit interval, the speed of rotation, feeding abrasive material, polishing running orbit etc. of each processed wafer all keeps relatively consistent, effectively can improve the uniformity of wafer process result.Be separated inner ring 3 and can make different size as required, thus the wafer of multi-disc different size can be carried out polishing simultaneously.Radial sun groove can be opened at separation outer shroud 2 with the bottom being separated inner ring 3, thus effectively can improve the contact rate in polishing fluid and wafer polishing face, improve polishing efficiency.In addition, eseparation ring can be made up of the macromolecular material such as polytetrafluoroethylene (PTFE), nylon, and reusable.
< processing method >
1. pretreatment process
The present invention's carborundum crystal ingot (wafer) used can be monocrystalline, and it can adopt conventional physical vapor transport growth gained or market to buy.Those skilled in the art can be prepared according to the correlation technique of prior art.The specification of the crystal ingot adopted can be different, adopts strip carborundum crystal ingot to be example below.But should be understood that the carborundum crystal ingot of other specifications is also applicable.
Carborundum crystal ingot is carried out shaping, directional process to required crystal orientation, after crystal orientation is corrected again by crystal ingot shaping to required form.In the present invention, be preferably shaped as plane.
Above-mentioned reforming process can adopt surface grinding machine to process or surface grinding machine coordinates inside and outside round cutting machine to use.The directional bias of the above-mentioned crystal ingot end face through shaping is less than 5 ', is 0 ' by making directional bias during online direction finder.
Then, cutting process can be carried out to required size to the crystal ingot after Shape correction.Should be understood that size needs cutting by subsequent technique.
Above-mentioned cutting process can adopt multi-line cutting machine, and the wafer thickness deviation cut out is little, tangent plane uniformity is good, directly can carry out follow-up polishing without the need to twin grinding.
By above-mentioned shaping, orientation, cutting action, the wafer of required form, crystal orientation, size can be obtained.
Then, the wafer through cutting is carried out bevelling process, to make sharp edges round and smoothization of silicon carbide wafer.In one example, bevelling shape is 45° angle straight flange.In another example, bevelling shape is arc-shaped.By carrying out bevelling process to silicon carbide wafer, the contact rate of wafer surface polishing fluid in the unit interval effectively can be increased in following polishing process, improve polishing efficiency, and reduce wafer corner to the damage of polishing cloth, effectively improve the service life of polishing cloth.
2. polishing process
Adopt above-mentioned burnishing device that pretreated wafer is carried out polishing.Choose the pretreated silicon carbide wafer of some, put into the slotted eye being separated inner ring 3 successively.Adjustment polishing chassis 1 rotating speed, polishing fluid flow, the eseparation ring amplitude of oscillation, eseparation ring CD-ROM drive motor 5 rotating speed can carry out polishing to proper ratio.
In addition, in polishing process, according to silicon carbide wafer surface removal rate speed, certain standard briquetting can be added at chip back surface, to improve the clearance of finished surface.The material of institute's accepted standard briquetting includes but not limited to as metal or pottery, only otherwise with oxidant reaction used in following CMP.Again, the deviation of weight of standard briquetting is preferably not more than 0.5 gram.
In the present invention, polishing process can comprise rough polishing successively, essence is thrown and chemically mechanical polishing.Thus effectively can remove the cut of wafer surface, improve the flatness on wafer process surface.
Wherein, the polishing chassis that rough polishing adopts can be fluting copper dish, and the polishing fluid adopted can be the coarse granule diamond polishing fluid that particle diameter is 3 ~ 5 μm.In addition, the rotating speed on polishing chassis can be 60 ~ 90rpm, and the rotating speed of eseparation ring can be 30 ~ 40rpm, and the pressure put on wafer can be 100 ~ 200g.After polishing certain hour, available AFM and laser interferometer detect roughness and the flatness of wafer surface.After result to be detected meets the requirements, wafer is cleaned, enter essence and throw processing.Should be understood that above-mentioned testing result is determined with final required plane quality.Such as, roughness measurement result General Requirements is at nanoscale, and surface scratch is more shallow.Flatness reaches about 40 ~ 50% of final requirement.
Essence is thrown the polishing chassis adopted and be can be fluting tin dish, and the polishing fluid adopted can be the fine grained diamond polishing fluid that particle diameter is 0.5 ~ 1 μm.In addition, the rotating speed on polishing chassis can be 30 ~ 50rpm, and the rotating speed of eseparation ring can be 15 ~ 25rpm, and the pressure put on wafer can be 50 ~ 100g.After polishing certain hour, available AFM and laser interferometer detect roughness and the flatness of wafer surface.After result to be detected meets the requirements, wafer is cleaned, enter chemically mechanical polishing processing.Should be understood that above-mentioned testing result is determined with final required plane quality.Such as, on roughness measurement result General Requirements burnishing surface basic no marking or cut seldom, extremely shallow.Flatness reaches about 80 ~ 90% of final requirement.
The polishing chassis that chemically mechanical polishing adopts can be on stainless steel disc pastes polishing cloth, and the polishing fluid adopted can be the ultra-fine grain diamond polishing fluid that the particle diameter adding oxidant is 0.05 ~ 0.1 μm.Wherein, polishing cloth can be the polishing cloth that homemade shore hardness is 50 ~ 75HA.The oxidant added in polishing fluid can be the strong oxidizing property materials such as hydrogen peroxide, chromium oxide and/or potassium permanganate.In addition, the rotating speed on polishing chassis can be 10 ~ 20rpm, and the rotating speed of eseparation ring can be 5 ~ 10rpm, and the pressure put on wafer can be 0 ~ 40g.After polishing certain hour, available AFM and laser interferometer detect roughness and the flatness of wafer surface.After result to be detected meets the requirements, wafer is cleaned, encapsulation.Should be understood that above-mentioned testing result is determined with final required plane quality.Such as, the complete no marking in wafer polishing face, flatness reaches final requirement.
In addition, for avoiding producing cross influence owing to using polishing fluid granularity different between different polishing process, the machine that each procedure uses and eseparation ring can be relatively independent.
If wafer needs twin polishing, can until first surface reach paste layer protecting film after polishing requirement after polishing is carried out to second face.For the wafer of twin polishing, for reaching best polishing effect, can first polishing minor face, the then main face of polishing.
In one example, choose 5 silicon carbide wafers and adopt method of the present invention polishing simultaneously, the silicon carbide wafer optical grade surface test data after polishing are as shown in table 1:
Show flatness and the roughness test result on the optical grade surface after the polishing simultaneously of 1:5 silicon carbide wafer
| Numbering | 1# | 2# | 3# | 4# | 5# |
| Flatness (ww) | 0.1125 | 0.0841 | 0.0954 | 0.1044 | 0.0799 |
| Roughness (nm) | 0.154 | 0.140 | 0.138 | 0.125 | 0.145 |
Fig. 3,4 illustrates the roughness of in the silicon carbide wafer of polishing process and flatness testing result figure respectively, and wherein, flatness is: PV=0.0799ww, and roughness is: Rq=0.145nm, Ra=0.0838nm.Known, the roughness through the silicon carbide wafer surface that the inventive method obtains and flatness all less, meet optical grade surface requirements.
Industrial applicability: burnishing device of the present invention may be used for monolithic polishing, also multi-disc can carry out polishing together, the wafer of multi-disc different size can also be carried out polishing simultaneously, improve polishing efficiency.Processing method of the present invention is easy and simple to handle, cost is low, is applicable to the optical grade plane machining being widely used in small lot or experimental silicon carbide wafer, has very large industrial applicability.
Claims (9)
1., for a burnishing device for the optical grade plane machining of carborundum crystals, it is characterized in that, comprising:
Carry polishing fluid and the polishing chassis that can rotate;
To be positioned at above described polishing chassis and for carrying each to polishing eseparation ring of polished wafer; And
Make each transmission mechanism rotated to polishing eseparation ring;
Wherein, described respectively comprising to polishing eseparation ring is separated outer shroud and is arranged in the described multiple separation inner ring being separated outer shroud and arranging around its axle center, and the outside of described separation inner ring, the inside being separated outer shroud have that can engage each other also can with the travelling gear meshed gears shape structure of described transmission mechanism to make the speed of rotation of polished wafer, polish abrasive supply and polishing running orbit keeps relative consistent respectively.
2. burnishing device according to claim 1, is characterized in that, also comprises the laser interferometer of the surface of wafer being carried out to optical detection.
3. burnishing device according to claim 1 and 2, is characterized in that, the bottom of described separation outer shroud is configured with radial sun groove.
4. burnishing device according to any one of claim 1 to 3, is characterized in that, described polishing chassis is slotted metal dish or the stainless steel disc pasting polishing cloth.
5. burnishing device according to any one of claim 1 to 4, is characterized in that, described each material to polishing eseparation ring is macromolecule polymer material, as polytetrafluoroethylene (PTFE), nylon etc.
6. adopt the burnishing device any one of claim 1 to 5 to obtain a processing method for the optical grade plane of carborundum crystals, it is characterized in that, comprising:
To carborundum crystal ingot carry out shaping, orientation, be cut to required specification wafer after carry out the pretreatment process that bevelling process obtains at least one polished wafer; And
At least one polished wafer is carried out the polishing process of surface finish to optical grade surface;
In described polishing process, the speed of rotation, the feeding abrasive material of at least one polished wafer described in the unit interval keep relative consistent with polishing running orbit.
7. the processing method of carborundum crystals according to claim 6, is characterized in that, described polishing process comprises rough polishing successively, essence is thrown and chemically mechanical polishing; In described rough polishing operation, described polishing chassis is fluting copper dish, polishing fluid to be particle diameter the be coarse granule diamond polishing fluid of 3 ~ 5 μm; Throw in operation in described essence, described polishing chassis is fluting tin dish, polishing fluid to be particle diameter the be fine grained diamond polishing fluid of 0.5 ~ 1 μm; In described chemical-mechanical polishing process, described polishing chassis is paste the stainless steel disc of polishing cloth, polishing fluid to be the particle diameter adding oxidant the be ultra-fine grain diamond polishing fluid of 0.05 ~ 0.1 μm.
8. the processing method of carborundum crystals according to claim 7, is characterized in that, described oxidant comprises hydrogen peroxide, chromium oxide or potassium permanganate.
9. the processing method of the carborundum crystals according to any one of claim 6 to 8, is characterized in that, in described polishing process, adds specified standard briquetting respectively at the back side of at least one polished wafer described.
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| CN201410056725.2A CN104842253A (en) | 2014-02-19 | 2014-02-19 | Polishing device for optical grade plane processing of silicon carbide crystals and processing method |
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| CN106826471A (en) * | 2017-02-25 | 2017-06-13 | 赵子宁 | A kind of platinum electrode sanding apparatus |
| CN107052989A (en) * | 2017-05-11 | 2017-08-18 | 济源石晶光电频率技术有限公司 | Quartz wafer glossing |
| CN108058066A (en) * | 2017-12-05 | 2018-05-22 | 江苏师范大学 | A kind of big method for processing surface of laser slab medium |
| CN108381330A (en) * | 2018-03-16 | 2018-08-10 | 中国工程物理研究院激光聚变研究中心 | A kind of burnishing device and polissoir |
| CN110919465A (en) * | 2019-11-08 | 2020-03-27 | 中国科学院上海硅酸盐研究所 | Nondestructive high-flatness single crystal silicon carbide planar optical element and preparation method thereof |
| CN111002205A (en) * | 2019-12-19 | 2020-04-14 | 黄卫良 | Wafer polishing equipment for semiconductor |
| CN115026663A (en) * | 2022-06-30 | 2022-09-09 | 西安奕斯伟材料科技有限公司 | Polishing apparatus and polishing method |
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| CN106826471B (en) * | 2017-02-25 | 2019-03-12 | 天津市航硕自动化技术有限公司 | A kind of platinum electrode grinding device |
| CN107052989A (en) * | 2017-05-11 | 2017-08-18 | 济源石晶光电频率技术有限公司 | Quartz wafer glossing |
| CN108058066A (en) * | 2017-12-05 | 2018-05-22 | 江苏师范大学 | A kind of big method for processing surface of laser slab medium |
| CN108381330A (en) * | 2018-03-16 | 2018-08-10 | 中国工程物理研究院激光聚变研究中心 | A kind of burnishing device and polissoir |
| CN108381330B (en) * | 2018-03-16 | 2019-09-06 | 中国工程物理研究院激光聚变研究中心 | A kind of burnishing device and polissoir |
| CN110919465A (en) * | 2019-11-08 | 2020-03-27 | 中国科学院上海硅酸盐研究所 | Nondestructive high-flatness single crystal silicon carbide planar optical element and preparation method thereof |
| CN111002205A (en) * | 2019-12-19 | 2020-04-14 | 黄卫良 | Wafer polishing equipment for semiconductor |
| CN111002205B (en) * | 2019-12-19 | 2022-02-01 | 山东欧思特新材料科技有限公司 | Wafer polishing equipment for semiconductor |
| CN115026663A (en) * | 2022-06-30 | 2022-09-09 | 西安奕斯伟材料科技有限公司 | Polishing apparatus and polishing method |
| CN115026663B (en) * | 2022-06-30 | 2023-11-17 | 西安奕斯伟材料科技股份有限公司 | Polishing apparatus and polishing method |
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