CN110919465A - Nondestructive high-flatness single crystal silicon carbide planar optical element and preparation method thereof - Google Patents
Nondestructive high-flatness single crystal silicon carbide planar optical element and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a nondestructive high-flatness single crystal silicon carbide planar optical element and a preparation method thereof. The preparation method comprises the following steps: (1) selecting a whole single crystal silicon carbide crystal ingot with zero micro-pipeline; (2) cutting the single crystal silicon carbide crystal ingot to obtain a rough blank; (3) carrying out double-sided grinding on the rough blank to obtain two parallel rough grinding surfaces; (4) polishing the two parallel rough grinding surfaces to obtain an optical mirror surface; (5) and carrying out chemical mechanical polishing on the optical mirror surface, removing a damaged layer of the mirror surface, and carrying out local finishing to obtain the nondestructive high-flatness single crystal silicon carbide planar optical element.
Description
Technical Field
The invention belongs to the technical field of optical element preparation, and particularly relates to a nondestructive high-flatness single crystal silicon carbide planar optical element and a preparation method thereof.
Background
Optical elements such as plane mirrors, transmission mirrors, aspherical mirrors, etc. have a very wide use in many fields such as telescopes, lasers, cameras, etc. Commonly used optical element materials include quartz, BK7 glass, calcium fluoride, magnesium fluoride, zinc selenide, and the like. At present, no single crystal silicon carbide optical element exists, the main reason is that the growth technology of the early single crystal silicon carbide is not mature enough, the surface of the single crystal silicon carbide optical element has obvious defects due to the defects of micro-pipelines and the like, so that the optical element is difficult to meet the requirements of high flatness and low roughness of the optical element, and the single crystal silicon carbide optical element currently realizes the zero micro-tube growth technology. In addition, the size of the early monocrystalline silicon carbide is smaller, and the size of the current more mature monocrystalline silicon carbide reaches 150mm in diameter and 30mm in thickness. The technological progress of the two aspects enables the single crystal silicon carbide material to become a novel optical element material.
Due to excellent physical properties of silicon carbide material, such as excellent thermal conductivity (room temperature thermal conductivity close to that of metal copper which is a commonly used high-quality heat dissipation material), small thermal expansion coefficient, high elastic modulus, small density, high specific stiffness and the like, silicon carbide ceramics are used for large optical elements, such as large silicon carbide ceramic-based reflectors which are used for high-resolution imaging satellite lenses, reaction sintering lightweight silicon carbide reflector blanks and preparation methods thereof (CN 200910123912.7) invented by Shanghai silicate research institute of Chinese academy of sciences, and preparation devices and preparation methods thereof (CN201410604521) invented by Changchun optical precision machinery and physical research institute of Chinese academy of sciences. The advantages of the silicon carbide material in light weight, thermal shock resistance, mechanical shock resistance and severe space environment are reflected. However, the silicon carbide ceramic material is used as the important mirror body material. The ceramic material is formed by randomly orienting small irregular grains with different directions and sizes, and other materials are often filled in grain boundaries to tightly combine the grains, so that micropores which cannot be completely filled are left. Therefore, defects such as micropores, channels and the like caused by micropores, grain boundaries, inclusions and the like inevitably exist in the surface polishing process of the silicon carbide ceramic optical element, and the defects need to be compensated by a subsequent very complicated process. The single crystal silicon carbide material has more advantages than the silicon carbide ceramic material in the aspects of heat conductivity, compactness, optical transmittance and the like, and in the aspect of the size of the silicon carbide single crystal, although the size can not be in the meter level at present, the silicon carbide single crystal with the diameter of 150mm can be grown, and the size can be widely used in the field of optical elements. However, there is no disclosure or invention report on a single crystal silicon carbide optical element or a method for producing the same. The reason for this may be that the mohs hardness of single crystal silicon carbide 9.5 makes it very difficult to process. And the traditional optical level processing generally focuses more on the surface optical flatness, and relates to less ultra-low roughness and non-damage technologies which are focused on the field of semiconductor processing. Therefore, the nondestructive high-flatness single crystal silicon carbide planar optical element with optical and semiconductor advanced processing performances and the controllable preparation method thereof have important application value.
Disclosure of Invention
In view of the above, the present invention provides a damage-free, high-flatness single crystal silicon carbide planar optical element and a method for manufacturing the same, which can manufacture an optical element having excellent properties such as strong laser resistance, no surface damage, and high flatness.
On one hand, the preparation method of the nondestructive high-flatness single crystal silicon carbide planar optical element comprises the following steps:
(1) selecting a whole single crystal silicon carbide crystal ingot with zero micro-pipeline;
(2) cutting the single crystal silicon carbide crystal ingot to obtain a rough blank;
(3) carrying out double-sided grinding on the rough blank to obtain two parallel rough grinding surfaces;
(4) polishing the two parallel rough grinding surfaces to obtain an optical mirror surface;
(5) and carrying out chemical mechanical polishing on the optical mirror surface, removing a damaged layer of the mirror surface, and carrying out local finishing to obtain the nondestructive high-flatness single crystal silicon carbide planar optical element.
The invention is obviously different from the prior method that non-monolithic single crystal materials such as silicon carbide ceramics and the like are adopted, and monolithic single crystal silicon carbide materials are adopted to prepare optical elements. Non-monolithic single crystal materials such as silicon carbide ceramics and the like consist of small crystal grains with different crystal orientations, and have defects such as crystal boundaries, pores, inclusions and the like, which influence the optical flatness, heat dissipation and other performances; at present, the materials are all opaque and can only be used as a reflective mirror surface; when non-monolithic single crystal materials such as silicon carbide ceramics and the like are used for preparing an optical plane, a more compact film needs to be plated on the surface to reduce the influence of defects. The optical element prepared by adopting the monolithic single crystal silicon carbide material has no defects such as crystal boundary, pore, inclusion and the like in the preparation aspect, so that an optical plane with higher quality can be obtained, and additional processes such as film coating and the like are not needed; since single crystal silicon carbide is optically transparent, it can be used as a reflective mirror surface and also as a transmissive optical element.
The single crystal silicon carbide planar optical element prepared by the preparation method of the invention adopts the silicon carbide single crystal material, so that compared with other optical elements used at present, the single crystal silicon carbide planar optical element has excellent physical properties such as excellent thermal conductivity, smaller thermal expansion coefficient, higher elastic modulus, smaller density, high specific stiffness and the like; and also has higher surface quality than the silicon carbide ceramic-based optical element.
Preferably, the single crystal silicon carbide crystal form comprises 2H, 3C, 4H, 6H or 15R.
Preferably, the single crystal silicon carbide is doped with at least one of Ca, Fe, Ni, Cr, N, P, B, Al, V, Ti and rare earth elements to obtain different optical transmission properties.
Preferably, the zero micro-pipe single crystal silicon carbide ingot is oriented prior to slicing using the family of crystal planes of the single crystal silicon carbide as the optical processing planes.
Preferably, the family of crystal planes of the single-crystal silicon carbide includes the family of (001) crystal planes, the family of (110) crystal planes and the family of (111) crystal planes.
Preferably, the single crystal silicon carbide has a-90 to +90 off-angle between the families of crystal planes with different crystallographic directions.
Preferably, the rough surface has a surface roughness of 1 to 50nm, and the thickness non-uniformity (TTV) of the double-side polished device is 1 to 25 μm.
Preferably, the surface roughness of the optical mirror surface is 0.2 to 10 nm.
Preferably, the surface roughness of the nondestructive high-flatness single crystal silicon carbide planar optical element is 0.05-0.2 nm.
Preferably, the surface peak-to-valley (PV) value of the damage-free, high-flatness single-crystal silicon carbide planar optical element is 0.01 wavelength to 0.2 wavelength as measured with light having a wavelength of 632.8 nm.
On the other hand, the invention also provides the nondestructive high-flatness single crystal silicon carbide planar optical element prepared by the preparation method.
The section of the obtained nondestructive high-flatness single crystal silicon carbide planar optical element is detected by a scanning electron microscope, and surface microcracks do not exist.
The section of the obtained nondestructive high-flatness single crystal silicon carbide planar optical element is detected by a high-resolution transmission electron microscope, and the surface damage layer and the subsurface damage layer are avoided.
In addition, various optical films can be plated on the surface of the nondestructive high-flatness single crystal silicon carbide planar optical element according to actual needs.
The silicon carbide optical element prepared by the steps is subjected to flatness and surface quality detection, so that high flatness and ultralow roughness meeting the requirements of the optical element can be achieved, and the obtained optical element has excellent performances of strong laser resistance, no surface damage, high flatness and the like.
Drawings
FIG. 1 is a non-damaged, high-flatness single-crystal silicon carbide planar optical component produced in example 1 of the present invention.
FIG. 2 is a view showing the flatness detection of a damage-free, high-flatness single-crystal silicon carbide planar optical element produced in example 1 of the present invention.
FIG. 3 is a surface roughness measurement of a damage-free, high-planarity single-crystal silicon carbide planar optical component prepared in example 1 of the present invention.
FIG. 4 is a TEM image of a cross-section of a damage-free, high-planarity single-crystal silicon carbide planar optical element produced in example 1 of the present invention.
FIG. 5 is an optical transmission spectrum of a damage-free, high-flatness, single-crystal silicon carbide planar optical element prepared using 5 SiC single-crystal ingots of different doping compositions and concentrations, wherein curve (a) is doped with nitrogen (N) and boron (B) at a concentration of N6E 16atoms/cm3,B＝2E15 atoms/cm3(ii) a Curve (B) doping composition N, B, concentration N6E 16atoms/cm3,B＝4E15 atoms/cm3(ii) a Curve (c) doping composition N, B, vanadium (V) concentration N ═ 6E16atoms/cm3,B＝4E15 atoms/cm3，V＝5E16 atoms/cm3(ii) a Curve (d) doping composition N, B, V, concentration N6E 16atoms/cm3,B＝4E15 atoms/cm3，V＝1E17 atoms/cm3(ii) a Curve (E) doping composition N, B, V, concentration N6E 16atoms/cm3,B＝4E15 atoms/cm3，V＝2E17 atoms/cm3。
Detailed Description
The present invention is further illustrated by the following examples, which are to be understood as merely illustrative and not restrictive.
The method for producing a damage-free, high-flatness single-crystal silicon carbide planar optical element according to the present invention is described below.
Firstly, selecting a monocrystalline silicon carbide crystal ingot, and carrying out plane grinding and rough polishing on two large end faces of the crystal ingot to obtain two bright end faces. Wherein the surface grinding can be realized by a surface grinding machine. The rough polishing can be carried out by using a double-sided polishing machine until the surface roughness reaches 0.5-5 nm.
And carrying out optical detection on the end face, and selecting the monocrystalline silicon carbide crystal ingot without the micro-pipeline. By adopting the monocrystalline silicon carbide with zero micro-pipeline, the surface defect caused by the leakage of the micro-pipeline can be avoided. The micro-pipe leakage head can form a hole on the processing surface to block the reflection and transmission of light. In some embodiments, a polarizer may be used for optical detection.
The crystal form of the single crystal silicon carbide comprises 2H, 3C, 4H, 6H and 15R. Different crystal forms have different crystal structures, and each crystal face direction has different optical properties, so that the requirements of more application scenes can be met.
In order to meet the requirements of optical transmittance of different wavelengths, the single crystal silicon carbide can be doped with at least one of Ca, Fe, Ni, Cr, N, P, B, Al, V, Ti and rare earth elements.
Then, according to the size and direction requirements of the target optical element, the monocrystalline silicon carbide crystal ingot is subjected to primary cutting to obtain a rough blank with a certain machining allowance. In some embodiments, a single crystal silicon carbide ingot is sliced by an outer circle to obtain a target size single crystal silicon carbide square mirror blank.
In some embodiments, the selected microchannel-free single crystal silicon carbide ingot is oriented using the family of crystal planes of the single crystal silicon carbide as the optical processing plane and then sliced. Most of silicon carbide single crystals have anisotropic crystal structures, different directions have different optical properties, and accurate crystal plane directions can be found by orientation, so that accurate elements are provided for application. Orientation may be performed, for example, by an X-ray orientation machine.
The crystal plane family of the single crystal silicon carbide includes (001) crystal plane family, (110) crystal plane family and (111) crystal plane family. Also, a slip angle of-90 ° to +90 ° may exist between crystal plane groups of different crystallographic directions of the single-crystal silicon carbide.
Then, the rough blank is subjected to double-sided grinding to obtain two parallel rough grinding surfaces. The surface roughness of the rough grinding surface is 1-50 nm. The thickness unevenness of the rough grinding surface is 1 to 25 μm. In some embodiments, the optical plane to be processed is double-side ground using a double-side grinder for a single-crystal silicon carbide square mirror blank as a rough blank.
Subsequently, two parallel rough grinding surfaces obtained by double-side grinding are polished with high precision to obtain an optical mirror surface. The surface roughness of the optical mirror surface is 0.2-10 nm. In some embodiments, two parallel rough grinding surfaces to be processed of the single crystal silicon carbide square mirror blank are subjected to high-precision polishing by a vertical high-precision grinding wheel grinder to obtain a smooth and flat mirror surface.
And removing the surface and sub-surface damaged layers of the silicon carbide optical element with the mirror surface by adopting chemical mechanical polishing. The chemical mechanical polishing is performed by using a chemical polishing solution commonly used in the art. In some embodiments, the chemical liquid mainly containing silica sol, hydrogen peroxide and the like is used for chemical mechanical polishing, a double-sided chemical mechanical polishing machine is adopted, the rotating speed can be 30-120 r/s, and the processing time can be 10 minutes to 10 hours.
And carrying out flatness detection on the silicon carbide optical element after the chemical mechanical polishing, and carrying out flatness analysis to obtain a finishing program. For example, small grinding wheel truings may be used. The main purpose of the small grinding head dressing program is to automatically give the small grinding head dressing program from the flatness detection data quickly for the small grinding head device to read and execute.
And carrying out small grinding head chemical mechanical polishing and finishing on the silicon carbide optical element subjected to chemical mechanical polishing to obtain the nondestructive high-flatness single crystal silicon carbide planar optical element.
In some embodiments, a vertical high-precision machine tool using a small grinding head is used to remove a damaged layer of the silicon carbide mirror surface in cooperation with a chemical polishing solution for a smooth and flat mirror surface to be processed by a single crystal silicon carbide square mirror blank, and a high point on the plane is trimmed at the same time, so that a nondestructive high-flatness single crystal silicon carbide planar optical element is obtained.
The preparation method of the invention aims at the single crystal optical element required by the application in the optical field, the shape of the single crystal optical element is generally a thicker block, and the surface processing of the single crystal optical element needs to achieve the application indexes in the optical field, such as ultra-low optical flatness, besides the high flatness and low damage indexes. Therefore, the crystal face and the optical processing technology are strictly limited on the processing method, particularly, a small grinding head chemical mechanical polishing optical plane finishing technology is introduced, and the high optical precision finishing without damage is pertinently carried out on the local higher part of the surface, so that the mirror surface with no damage and high optical flatness is obtained.
The flatness parameter is generally used for semiconductor single crystal wafer, and usually the unit is micrometer (mum), and the flatness of the general wafer is 1-20 um; flatness parameters are generally adopted in the optical field, and have higher precision, for example, a wavelength 632.8nm test is adopted, and usually, the optical flatness is required to reach 1/10 wavelength, namely, 63.28 nm. The single crystal optical element of the invention, which is required by the application in the optical field, is generally a thicker block, and the surface processing of the single crystal optical element needs to achieve the application indexes in the optical field, such as ultra-low optical flatness, besides the high flatness and low damage indexes.
In addition, the traditional optical field has little need for no damage; the conventional semiconductor field has very little demand on optical plane, so that under the condition of no demand, the technology development of high optical flatness in the optical field and the nondestructive semiconductor field is not available. The invention simultaneously uses the semiconductor-grade nondestructive processing technology of the silicon carbide single crystal and the high-flatness optical processing technology of the silicon carbide single crystal, finds that the silicon carbide single crystal can simultaneously achieve the advanced performances of nondestructive in the semiconductor field and high-flatness optical in the optical field, develops the preparation method and is expected to provide a new optical element with better performance.
The surface roughness of the obtained nondestructive high-flatness single crystal silicon carbide planar optical element is 0.05-0.2 nm.
The surface PV value of the obtained nondestructive high-flatness single crystal silicon carbide planar optical element is 0.01 wavelength to 0.2 wavelength.
The single crystal silicon carbide planar optical element obtained by the invention adopts the silicon carbide single crystal material, so that compared with other optical elements used at present, the single crystal silicon carbide planar optical element has excellent physical properties such as excellent thermal conductivity, small thermal expansion coefficient, high elastic modulus, small density and high specific stiffness, and also has higher surface quality than a silicon carbide ceramic-based optical element.
The present invention will be described in detail by way of examples. It is also to be understood that the following examples are illustrative of the present invention and are not to be construed as limiting the scope of the invention, and that certain insubstantial modifications and adaptations of the invention by those skilled in the art may be made in light of the above teachings. The specific process parameters and the like of the following examples are also only one example of suitable ranges, i.e., those skilled in the art can select the appropriate ranges through the description herein, and are not limited to the specific values exemplified below.
Example 1
The preparation method of the single crystal silicon carbide planar optical element based on the single crystal silicon carbide material with no damage and high flatness comprises the following steps:
(1) selecting a 4-inch 4H crystal form high-purity monocrystalline silicon carbide crystal ingot grown by a Physical Vapor Transport (PVT) method, wherein the main impurity components are nitrogen (N) and boron (B), and the concentrations of the N and the B are respectively 6E16atoms/cm3，B＝2E15 atoms/cm3；
(2) Carrying out plane grinding on two large growth surfaces (surfaces with deviation angle within 10 degrees from the (001) surface) with larger areas of the crystal ingot by adopting a plane grinder, and carrying out rough polishing by adopting a double-sided polishing machine to obtain two bright end surfaces;
(3) carrying out optical detection on the end face by adopting a polariscope, and selecting a silicon carbide crystal ingot without a micro-pipeline;
(4) orienting the selected silicon carbide crystal ingot by an X-ray orientation instrument;
(5) preliminarily cutting the silicon carbide crystal ingot to obtain a rough blank with the thickness of 10.5mm multiplied by 60.5mm multiplied by 3.5mm, wherein the large surface is a (001) surface;
(6) carrying out double-sided grinding on the silicon carbide optical element rough blank by using a double-sided grinder until the total thickness deviation (TTV) is less than 3 mu m and the surface roughness is 20 nm;
(7) carrying out high-precision polishing on the silicon carbide optical element rough blank by adopting a vertical high-precision grinding wheel grinder to obtain an optical mirror surface with the surface roughness of 2 nm;
(8) the method comprises the following steps of (1) carrying out chemical mechanical polishing on a silicon carbide optical element with a mirror surface by adopting self-made chemical liquid which takes silica sol, hydrogen peroxide and the like as main components, and completely removing a surface and subsurface damage layer by adopting a double-sided chemical mechanical polishing machine at the rotating speed of 60 r/s for 30 minutes, wherein the surface roughness is 0.2 nm;
(9) carrying out flatness detection on the silicon carbide optical element after chemical mechanical polishing;
(10) performing computer program analysis on the planeness of the silicon carbide optical element after the chemical mechanical polishing to calculate a relatively optimized small grinding head finishing program;
(11) and (3) carrying out chemical mechanical polishing on the small grinding head by using the vertical high-precision machine tool with the small grinding head for the silicon carbide optical element subjected to chemical mechanical polishing by using the finishing program and matching with chemical polishing liquid (the chemical polishing liquid is the same as the chemical polishing liquid in the step (8)), so as to obtain the single crystal silicon carbide optical element with high flatness and no damage.
Fig. 1 shows a high-flatness, damage-free single-crystal silicon carbide optical device obtained in example 1. The single crystal silicon carbide optical element prepared by the steps is subjected to flatness detection by adopting a commercially available plane optical interferometer, and is subjected to surface roughness detection by adopting a commercially available Atomic Force Microscope (AFM). FIG. 2 is a graph showing the results of a test using a planar optical interferometer produced by Chengtai Tekko electro-optical technology, Inc., showing that the flatness of a single crystal silicon carbide optical element is as low as 0.05 wavelength; FIG. 3 is a result of AFM test by Veeco showing that the surface roughness of the single crystal silicon carbide optical element reached 0.12nm without surface scratches; fig. 4 is a result of a high-resolution transmission electron microscope (HRTEM) test on the processed single-crystal silicon carbide optical element, showing that the surface cross section of the single-crystal silicon carbide optical element has no subsurface damage under the HRTEM.
In fig. 5, curve (a) shows the transmission spectrum of the SiC planar optical element obtained in this example, since the SiC single crystal is a highly reflective material and the surface reflectance is generally about 26%, the transmittance of the planar optical element prepared by using the high purity SiC single crystal in this example reaches 60%, indicating that the planar optical element has a very good optical transmittance.
The planar optical element obtained in this example was subjected to a thermal conductivity test using a model DLF-2800 laser thermal conductivity tester manufactured by TA Instruments, usa, based on the test standard ASTM E1461. The test shows that the thermal conductivity coefficient of the optical element at the experimental temperature of 25 ℃ is 408W/(m.k), and the thermal conductivity coefficient is 1.86cm2/s。
This demonstrates that the present invention meets the high flatness and ultra low roughness requirements required for optical elements and its damage free characteristics and excellent thermal conductivity properties of single crystal silicon carbide will allow it to have less deformation and stability under thermal shock and high light intensity.
Examples 2 to 5
Essentially the same as in example 1, except that: the doping content of doping chemical elements B and V is adjusted to prepare the single crystal silicon carbide for preparing the plane optical element. In example 2, the doping component of the silicon carbide single crystal is N, B, and the concentration is 6E16atoms/cm3,B＝4E15 atoms/cm3The optical transmittance of the light beam corresponds to the curve (b); in example 3, the silicon carbide single crystal was doped with N, B, and V at a concentration of N6E 16atoms/cm3,B＝4E15 atoms/cm3，V＝5E16 atoms/cm3The optical transmittance of the light beam corresponds to the curve (c); in example 4, the silicon carbide single crystal was doped with N, B, V at a concentration of N6E 16atoms/cm3,B＝4E15 atoms/cm3，V＝1E17 atoms/cm3The optical transmittance of the light beam corresponds to the curve (d); in example 5, the silicon carbide single crystal was doped with N, B, and V at a concentration of N6E 16atoms/cm3,B＝4E15 atoms/cm3，V＝2E17atoms/cm3The optical transmittance corresponds to curve (e).
It can be seen from the curves (B) (c) (d) (e) that the transmittance is reduced to a small extent as a whole by increasing the content of B in example 2 as compared with the high purity SiC single crystal; in the samples of comparative examples 3 to 5, the transmittance was largely adjusted in the range from 20% to 50% by gradually increasing the content of V, for example, at a wavelength of 800 nm; the transmittance can be adjusted greatly from 4% to 38% in the wavelength range of 1200nm, for example.
Comparative example 1
The thermal conductivity of the currently well-made Silicon Carbide ceramic mirrors is about 220W/m.K (thermal Insensive Silicon Carbide Optical ceramic substrate for High performance Small software Releft Space Environments, commonly known by the Space dynamics laboratory, Entegris, POCO GRAPHITE, Inc., Utah U.S.A.).
Claims (10)
1. A method for preparing a nondestructive high-flatness single crystal silicon carbide planar optical element is characterized by comprising the following steps:
(1) selecting a whole single crystal silicon carbide crystal ingot with zero micro-pipeline;
(2) cutting the single crystal silicon carbide crystal ingot to obtain a rough blank;
(3) carrying out double-sided grinding on the rough blank to obtain two parallel rough grinding surfaces;
(4) polishing the two parallel rough grinding surfaces to obtain an optical mirror surface;
(5) and carrying out chemical mechanical polishing on the optical mirror surface, removing a damaged layer of the mirror surface, and carrying out local finishing to obtain the nondestructive high-flatness single crystal silicon carbide planar optical element.
2. The production method according to claim 1, wherein the crystal form of the single-crystal silicon carbide includes 2H, 3C, 4H, 6H, or 15R.
3. The production method according to claim 1 or 2, wherein the single-crystal silicon carbide is doped with at least one of Ca, Fe, Ni, Cr, N, P, B, Al, V, Ti, and a rare earth element.
4. The method according to any one of claims 1 to 3, wherein the zero-micro channel single crystal silicon carbide ingot is oriented before slicing using, as an optical processing plane, a family of crystal planes of single crystal silicon carbide including a (001) family of crystal planes, a (110) family of crystal planes, and a (111) family of crystal planes.
5. The production method according to claim 4, wherein a drift angle of-90 ° to +90 ° exists between crystal plane groups of different crystallographic directions of the single-crystal silicon carbide.
6. The production method according to any one of claims 1 to 5, wherein the rough-ground surface has a surface roughness of 1 to 50nm, and the thickness unevenness of the double-side-ground element is 1 to 25 μm.
7. The production method according to any one of claims 1 to 6, wherein the surface roughness of the optical mirror surface is 0.2 to 10 nm.
8. The method according to any one of claims 1 to 7, wherein the surface roughness of the damage-free, high-flatness single-crystal silicon carbide planar optical element is 0.05 to 0.2 nm.
9. The method of any one of claims 1-8, wherein the damage-free, high-flatness single-crystal silicon carbide planar optical element has a surface peak-to-valley PV value as measured with light having a wavelength of 632.8nm of 0.01 wavelength to 0.2 wavelength.
10. A damage-free, high-flatness single-crystal silicon carbide planar optical element produced by the production method according to any one of claims 1 to 9.
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| CN114536111A (en) * | 2022-03-03 | 2022-05-27 | 宁波江丰电子材料股份有限公司 | Mirror surface processing method of tungsten target material and application thereof |
| CN116435175A (en) * | 2023-05-19 | 2023-07-14 | 河北同光半导体股份有限公司 | Processing method applied to silicon carbide single crystal substrate |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1231003A (en) * | 1997-06-27 | 1999-10-06 | 日本皮拉工业株式会社 | Single crystal SiC and process for preparing the same |
| CN101061262A (en) * | 2004-10-04 | 2007-10-24 | 格里公司 | Low Ic screw dislocation 3 inch silicon carbide wafer |
| CN101536168A (en) * | 2006-09-14 | 2009-09-16 | 科锐有限公司 | Micropipe-free silicon carbide and related method of manufacture |
| CN101966689A (en) * | 2010-09-27 | 2011-02-09 | 山东大学 | Surface polishing method for carbon surface of large-diameter 4H-SiC wafer |
| US20110266556A1 (en) * | 2010-04-28 | 2011-11-03 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
| CN103178131A (en) * | 2011-12-23 | 2013-06-26 | 上海硅酸盐研究所中试基地 | Opposite electrode structure, SiC photoconductive semiconductor switch (PCSS) and manufacturing methods thereof |
| CN104599949A (en) * | 2014-12-30 | 2015-05-06 | 上海师范大学 | Processing method of deep etching smooth surface based on SiC substrate slice |
| CN104842253A (en) * | 2014-02-19 | 2015-08-19 | 中国科学院上海硅酸盐研究所 | Polishing device for optical grade plane processing of silicon carbide crystals and processing method |
| CN105755534A (en) * | 2011-08-05 | 2016-07-13 | 住友电气工业株式会社 | Substrate, semiconductor device, and method of manufacturing the same |
| CN106591952A (en) * | 2016-12-09 | 2017-04-26 | 河北同光晶体有限公司 | Preparation method of SiC wafer |
| CN110396717A (en) * | 2019-07-12 | 2019-11-01 | 山东天岳先进材料科技有限公司 | High quality high-purity semi-insulating silicon carbide monocrystalline, substrate and preparation method thereof |
-
2019
- 2019-11-08 CN CN201911089706.9A patent/CN110919465A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1231003A (en) * | 1997-06-27 | 1999-10-06 | 日本皮拉工业株式会社 | Single crystal SiC and process for preparing the same |
| CN101061262A (en) * | 2004-10-04 | 2007-10-24 | 格里公司 | Low Ic screw dislocation 3 inch silicon carbide wafer |
| CN101536168A (en) * | 2006-09-14 | 2009-09-16 | 科锐有限公司 | Micropipe-free silicon carbide and related method of manufacture |
| US20110266556A1 (en) * | 2010-04-28 | 2011-11-03 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
| CN101966689A (en) * | 2010-09-27 | 2011-02-09 | 山东大学 | Surface polishing method for carbon surface of large-diameter 4H-SiC wafer |
| CN105755534A (en) * | 2011-08-05 | 2016-07-13 | 住友电气工业株式会社 | Substrate, semiconductor device, and method of manufacturing the same |
| CN103178131A (en) * | 2011-12-23 | 2013-06-26 | 上海硅酸盐研究所中试基地 | Opposite electrode structure, SiC photoconductive semiconductor switch (PCSS) and manufacturing methods thereof |
| CN104842253A (en) * | 2014-02-19 | 2015-08-19 | 中国科学院上海硅酸盐研究所 | Polishing device for optical grade plane processing of silicon carbide crystals and processing method |
| CN104599949A (en) * | 2014-12-30 | 2015-05-06 | 上海师范大学 | Processing method of deep etching smooth surface based on SiC substrate slice |
| CN106591952A (en) * | 2016-12-09 | 2017-04-26 | 河北同光晶体有限公司 | Preparation method of SiC wafer |
| CN110396717A (en) * | 2019-07-12 | 2019-11-01 | 山东天岳先进材料科技有限公司 | High quality high-purity semi-insulating silicon carbide monocrystalline, substrate and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114536111A (en) * | 2022-03-03 | 2022-05-27 | 宁波江丰电子材料股份有限公司 | Mirror surface processing method of tungsten target material and application thereof |
| CN116435175A (en) * | 2023-05-19 | 2023-07-14 | 河北同光半导体股份有限公司 | Processing method applied to silicon carbide single crystal substrate |
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