CN201960447U - Chemical mechanical polishing equipment - Google Patents
Chemical mechanical polishing equipment Download PDFInfo
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- CN201960447U CN201960447U CN2010206445701U CN201020644570U CN201960447U CN 201960447 U CN201960447 U CN 201960447U CN 2010206445701 U CN2010206445701 U CN 2010206445701U CN 201020644570 U CN201020644570 U CN 201020644570U CN 201960447 U CN201960447 U CN 201960447U
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Abstract
The utility model provides chemical mechanical polishing equipment which comprises a polishing thickness real-time feedback device and a slurry supply device connected with the polishing thickness real-time feedback device and provided with a plurality of flow division ports. The polishing thickness real-time feedback device feeds the real-time detection results about the polishing thickness uniformity of each polishing area of a wafer to be polished back to the slurry supply device, so as to perform real-time adjustments on the slurry flow rates of the flow division ports corresponding to different polishing areas of the wafer to be polished based on the thickness uniformity. Therefore, the flow rate of slurry can be adjusted with the polishing thickness uniformity in a real-time manner, and the uniformity and planarity of the polishing surface of the wafer are greatly improved.
Description
Technical field
The utility model relates to semiconductor machinery field of milling, particularly a kind of chemical-mechanical grinding device.
Background technology
Along with the develop rapidly of super large-scale integration ULSI (Ultra Large Scale Integration), integrated circuit fabrication process becomes and becomes increasingly complex with meticulous.In order to improve integrated level, reduce manufacturing cost, the characteristic size of element (Feature Size) constantly diminishes, number of elements in the chip unit are constantly increases, plane routing has been difficult to satisfy the requirement that the element high density distributes, can only adopt polylaminate wiring technique to utilize the vertical space of chip, further improve the integration density of device.But the application of polylaminate wiring technique can cause substrate surface uneven, and is extremely unfavorable to graphic making,, often need handle having an even surface of substrate (Planarization) for this reason.At present, chemical mechanical milling method (CMP, Chemical Mechanical Polishing) be the best approach of reaching overall planarization, especially after semiconductor fabrication process entered sub-micron (sub-micron) field, it had become an indispensable manufacture craft technology.
Chemically mechanical polishing (CMP) is to utilize the chemical solution and the finished surface generation chemical reaction that are mixed with minimum abrasive particle to change its surperficial valence bond, generate the product of mechanically removing easily, remove chemical reactant through mechanical friction again and obtain ultra-smooth undamaged planarized surface.
Fig. 1 is the structural representation of existing chemical-mechanical grinding device, as shown in Figure 1, this device comprises: the shell (not shown), the turntable (platen) 101 of grinding pad (polish pad) is posted on the surface, grinding head 102 and the lapping liquid supply pipe (tube) 103 that is used to carry lapping liquid (slurry).During grinding, earlier the to be ground of substrate to be ground faced down attached on the grinding head 102,, substrate is pressed onto on the grinding pad by on grinding head 102, applying downforce; Then, the turntable 101 that grinding pad is posted on the surface rotates under the drive of motor, and grinding head 102 also rotates in the same way, realizes mechanical lapping; Simultaneously, lapping liquid is transported on the grinding pad by lapping liquid supply pipe (tube) 103, and utilize the centrifugal force of turntable rotation to be distributed on the grinding pad, between substrate to be ground and grinding pad, form one deck fluid film, chemical reaction takes place in the surface of this film and substrate to be ground, generates the product of easily removing.This process is removed the material of substrate surface in conjunction with mechanism and chemical reaction.
But the lapping liquid supply position of lapping liquid supply pipe is more single on the chemical-mechanical grinding device of prior art, the centrifugal force of depending merely on turntable rotation can not guarantee that the lapping liquid on the grinding pad of grinding head below can evenly distribute, and the skewness of lapping liquid will directly have influence on the grinding effect of grinding head, cause substrate to grind the inhomogeneous of result.
The utility model content
The technical problems to be solved in the utility model provides a kind of chemical-mechanical grinding device, chemical-mechanical grinding device lapping liquid supply position with the solution prior art is single, lapping liquid on the grinding pad can not evenly distribute, and causes grinding result's uneven problem.
For solving the problems of the technologies described above, the utility model provides a kind of chemical-mechanical grinding device, comprise: the turntable of grinding pad is posted on the surface, grinding head, be used to carry the slurry supply apparatus of lapping liquid, also comprise being used to detect by the sensor of ground sample thickness and data processor that the measurement data of described sensor is handled; Described slurry supply apparatus comprises supply line, flow speed controller and a plurality of diversion port; Described sensor is installed under the described grinding pad, and described data processor connects described sensor, and an end of described flow speed controller connects described data processor, and the other end connects described supply line, and described diversion port is connected on the described flow speed controller; Described diversion port is distributed in the both sides of described flow speed controller.
Optionally, described grinding head is from the center to a plurality of different zones of being divided into of outermost end, institute's applied pressure difference on described each zone, the position of the diversion port that the both sides of described flow speed controller are provided with respectively corresponds respectively to the position in different pressures zone on the described grinding head.
Optionally, described slurry supply apparatus moves along the radius of described rotating disk, and its moving direction is relative with the moving direction of described grinding head, and displacement equates with the displacement of described grinding head.
The slurry supply apparatus that a plurality of diversion port arranged of chemical-mechanical grinding device of the present utility model by the real-time feedback device of grinding thickness being set and being connected with the real-time feedback device of grinding thickness, the inhomogeneity real-time testing result of grinding thickness of each abrasive areas of wafer to be ground can be fed back to slurry supply apparatus, make slurry supply apparatus adjust in real time lapping liquid flow velocity according to thickness evenness corresponding to each diversion port of the different abrasive areas of wafer to be ground, thereby the flow velocity of lapping liquid is adjusted in real time with the grinding thickness uniformity, improved the uniformity and the flatness of grinding wafer face greatly.
Description of drawings
Fig. 1 is the structural representation of existing chemical-mechanical grinding device;
Fig. 2 is the structural representation of chemical-mechanical grinding device of the present utility model;
Fig. 3 is a grinding head pressure distribution area schematic;
Fig. 4 is the workflow schematic diagram of chemical-mechanical grinding device of the present utility model.
The specific embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, the specific embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.
The device of cmp of the present utility model can be widely used in multiple field; and can utilize multiple substitute mode to realize; be to be illustrated below by preferred embodiment; certainly the utility model is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in the protection domain of the present utility model far and away.
Secondly, the utility model utilizes schematic diagram to describe in detail, and when the utility model embodiment was described in detail in detail, for convenience of explanation, schematic diagram disobeyed that general ratio is local amplifies, should be with this as to qualification of the present utility model.
Please referring to Fig. 2, Fig. 2 is the structural representation of chemical-mechanical grinding device of the present utility model.As shown in Figure 2, chemical-mechanical grinding device of the present utility model comprises: the turntable 210 of grinding pad is posted on the surface, grinding head 220, be used to carry lapping liquid slurry supply apparatus 230, be used to detect by the sensor (not shown) of ground sample thickness and data processor (not shown) that the measurement data of described sensor is handled; Described slurry supply apparatus 230 comprises supply line 231, flow speed controller 232 and a plurality of diversion port 233; Described sensor is installed under the described grinding pad, described data processor connects described sensor, one end of described flow speed controller 232 connects described data processor, and the other end connects described supply line 231, and described diversion port 233 is connected on the described flow speed controller 232; Described diversion port 233 is distributed in the both sides of described flow speed controller 232.
Please referring to Fig. 3, Fig. 3 is a grinding head pressure distribution area schematic.Because when using chemical-mechanical grinding device to grind, grinding head is exerted pressure to wafer to be ground when rotating, and its substrate is pressed onto on the grinding pad.Because the zones of different rotating speed difference of grinding head from the center to the outermost end, ground uniformly in order to make wafer to be ground, grinding head on the zones of different from the center to the outer end to wafer institute applied pressure difference to be ground.As shown in Figure 3, as a kind of embodiment, to Z1 zone, institute's applied pressure does not wait grinding head on each zone from the center to the be divided into Z5 of outermost end, Z5 zone applied pressure minimum wherein, Z1 zone maximum.Being ground wafer can determine with Z5 on the grinding head to five corresponding Z5 in zone of Z1 equally to five zones of Z1.For the control by lapping liquid flow that the grinding head zones of different is supplied is further promoted the uniformity of grinding, in chemical-mechanical grinding device of the present utility model,, be respectively arranged with the two ends that five different diversion port of S5 to S1 correspond respectively to Z5 to Z1 zone on the grinding head in the both sides of flow speed controller 232 corresponding to five zoness of different of grinding head Z5 to Z1.In like manner, grinding head from the center to outermost end also can be divided into Z3 to three zones of Z1 or Z7 to seven different number of areas such as zone of Z1, the different diversion port that the both sides of flow speed controller 232 also are respectively arranged with respective numbers corresponds respectively to each the regional two ends on the grinding head.
Please in conjunction with referring to Fig. 2 and Fig. 4, Fig. 4 is the workflow schematic diagram of chemical-mechanical grinding device of the present utility model.As Fig. 2 and shown in Figure 4, chemical-mechanical grinding device of the present utility model is when grinding, earlier the to be ground of wafer to be ground faced down attached on the grinding head 220,, face to be ground is pressed onto on the grinding pad on the rotating disk 210 by on grinding head 220, applying downforce; Lapping liquid is transported on the grinding pad by slurry supply apparatus 230 and utilizes the centrifugal force of turntable rotation to be distributed on the grinding pad, between substrate to be ground and grinding pad, form one deck fluid film, chemical reaction takes place in the surface of this film and substrate to be ground, generates the product of easily removing; The turntable 210 that grinding pad is posted on the surface rotates under the drive of motor, and grinding head 220 also rotates in the same way, realizes mechanical lapping; Ground by the sensor sensing to be ground of wafer at Z5 to each regional one-tenth-value thickness 1/10 of Z1, by data processor each the regional one-tenth-value thickness 1/10 that records is compared processing, obtain each regional consistency of thickness result, and the result is fed back to flow speed controller; Control the flow velocity of its both sides S5 by flow speed controller to each diversion port of S1; If by to be ground the mean value of going up the thickness in a certain zone in five zones of Z5 to Z1 greater than each area thickness of grinding wafer, then will increase the lapping liquid flow velocity of corresponding diversion port; If by to be ground the mean value of going up the thickness in a certain zone in five zones of Z5 to Z1 less than each area thickness of grinding wafer, then will reduce the lapping liquid flow velocity of corresponding diversion port.Therefore after rotating disk rotates, ground to be ground of wafer and go up Z5 and will adjust in real time to the adjustment of each diversion port lapping liquid flow velocity of S1 along with S5, thereby further improved the flatness of grinding wafer face to lapping liquid flow that the Z1 zones of different touched.
The scheme that is more preferably is: also carry out when mobile along the rotating disk radius when grinding head self rotates, slurry supply apparatus moves along the radius of rotating disk equally, its moving direction is relative along the moving direction of the radius of rotating disk with grinding head, displacement equates with the displacement of grinding head along the radius of rotating disk, can guarantee like this lapping liquid that slurry supply apparatus supplies just in time be positioned at along with moving of grinding head grinding head rotating disk on the track of process, thereby make the lapping liquid under the grinding head really realize the supply of dynamic shunt amount.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (3)
1. chemical-mechanical grinding device, comprise: the turntable of grinding pad is posted on the surface, grinding head, be used to carry the slurry supply apparatus of lapping liquid, it is characterized in that, also comprise being used to detect by the sensor of ground sample thickness and data processor that the measurement data of described sensor is handled; Described slurry supply apparatus comprises supply line, flow speed controller and a plurality of diversion port; Described sensor is installed under the described grinding pad, and described data processor connects described sensor, and an end of described flow speed controller connects described data processor, and the other end connects described supply line, and described diversion port is connected on the described flow speed controller; Described diversion port is distributed in the both sides of described flow speed controller.
2. chemical-mechanical grinding device as claimed in claim 1, it is characterized in that, described grinding head is from the center to a plurality of different zones of being divided into of outermost end, institute's applied pressure difference on described each zone, the position of the diversion port that the both sides of described flow speed controller are provided with respectively corresponds respectively to the position in different pressures zone on the described grinding head.
3. chemical-mechanical grinding device as claimed in claim 1, it is characterized in that, described slurry supply apparatus moves along the radius of described rotating disk, and its moving direction is relative with the moving direction of described grinding head, and displacement equates with the displacement of described grinding head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206445701U CN201960447U (en) | 2010-12-06 | 2010-12-06 | Chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206445701U CN201960447U (en) | 2010-12-06 | 2010-12-06 | Chemical mechanical polishing equipment |
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| CN201960447U true CN201960447U (en) | 2011-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010206445701U Expired - Fee Related CN201960447U (en) | 2010-12-06 | 2010-12-06 | Chemical mechanical polishing equipment |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105364699A (en) * | 2014-07-25 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | A chemical mechanical polishing method and a chemical mechanical polishing apparatus |
| CN105479325A (en) * | 2015-12-30 | 2016-04-13 | 天通吉成机器技术有限公司 | Partition pressing device and method suitable for large single-face grinding polishing device |
| CN106415797A (en) * | 2014-06-05 | 2017-02-15 | 应用材料公司 | Method and system for real-time polishing recipe control |
| CN107344327A (en) * | 2017-05-05 | 2017-11-14 | 清华大学 | In the method for improved wire flatness of wafer surface |
| CN109676527A (en) * | 2018-12-13 | 2019-04-26 | 中国科学院上海光学精密机械研究所 | The accurate automatic dripping device of small abrasive nose polishing machine special-purpose polishing liquid |
| CN113814860A (en) * | 2021-08-15 | 2021-12-21 | 江苏本川智能电路科技股份有限公司 | Copper surface treatment equipment before solder resist and processing method thereof |
| CN116810639A (en) * | 2023-07-28 | 2023-09-29 | 苏州博宏源机械制造有限公司 | Diamond liquid filling mechanism and grinding device |
-
2010
- 2010-12-06 CN CN2010206445701U patent/CN201960447U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415797A (en) * | 2014-06-05 | 2017-02-15 | 应用材料公司 | Method and system for real-time polishing recipe control |
| CN105364699A (en) * | 2014-07-25 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | A chemical mechanical polishing method and a chemical mechanical polishing apparatus |
| CN105479325A (en) * | 2015-12-30 | 2016-04-13 | 天通吉成机器技术有限公司 | Partition pressing device and method suitable for large single-face grinding polishing device |
| CN105479325B (en) * | 2015-12-30 | 2018-04-17 | 天通吉成机器技术有限公司 | A kind of subregion pressue device and method suitable for large-scale single side polishing grinding equipment |
| CN107344327A (en) * | 2017-05-05 | 2017-11-14 | 清华大学 | In the method for improved wire flatness of wafer surface |
| CN107344327B (en) * | 2017-05-05 | 2019-11-22 | 清华大学 | In the method for improved wire flatness of wafer surface |
| CN109676527A (en) * | 2018-12-13 | 2019-04-26 | 中国科学院上海光学精密机械研究所 | The accurate automatic dripping device of small abrasive nose polishing machine special-purpose polishing liquid |
| CN113814860A (en) * | 2021-08-15 | 2021-12-21 | 江苏本川智能电路科技股份有限公司 | Copper surface treatment equipment before solder resist and processing method thereof |
| CN116810639A (en) * | 2023-07-28 | 2023-09-29 | 苏州博宏源机械制造有限公司 | Diamond liquid filling mechanism and grinding device |
| CN116810639B (en) * | 2023-07-28 | 2024-05-10 | 苏州博宏源机械制造有限公司 | Diamond liquid filling mechanism and grinding device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130326 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20130326 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110907 Termination date: 20181206 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |